JP3728613B2 - 走査型露光装置の調整方法及び該方法を使用する走査型露光装置 - Google Patents

走査型露光装置の調整方法及び該方法を使用する走査型露光装置 Download PDF

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Publication number
JP3728613B2
JP3728613B2 JP32666996A JP32666996A JP3728613B2 JP 3728613 B2 JP3728613 B2 JP 3728613B2 JP 32666996 A JP32666996 A JP 32666996A JP 32666996 A JP32666996 A JP 32666996A JP 3728613 B2 JP3728613 B2 JP 3728613B2
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Japan
Prior art keywords
optical system
illumination
projection optical
scanning exposure
illumination area
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Expired - Fee Related
Application number
JP32666996A
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English (en)
Japanese (ja)
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JPH10172878A (ja
JPH10172878A5 (enExample
Inventor
哲夫 谷口
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Nikon Corp
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Nikon Corp
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Publication date
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Priority to JP32666996A priority Critical patent/JP3728613B2/ja
Publication of JPH10172878A publication Critical patent/JPH10172878A/ja
Priority to US09/465,696 priority patent/US6310680B1/en
Publication of JPH10172878A5 publication Critical patent/JPH10172878A5/ja
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Publication of JP3728613B2 publication Critical patent/JP3728613B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP32666996A 1996-12-06 1996-12-06 走査型露光装置の調整方法及び該方法を使用する走査型露光装置 Expired - Fee Related JP3728613B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP32666996A JP3728613B2 (ja) 1996-12-06 1996-12-06 走査型露光装置の調整方法及び該方法を使用する走査型露光装置
US09/465,696 US6310680B1 (en) 1996-12-06 1999-12-17 Method of adjusting a scanning exposure apparatus and scanning exposure apparatus using the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32666996A JP3728613B2 (ja) 1996-12-06 1996-12-06 走査型露光装置の調整方法及び該方法を使用する走査型露光装置

Publications (3)

Publication Number Publication Date
JPH10172878A JPH10172878A (ja) 1998-06-26
JPH10172878A5 JPH10172878A5 (enExample) 2005-08-04
JP3728613B2 true JP3728613B2 (ja) 2005-12-21

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ID=18190351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32666996A Expired - Fee Related JP3728613B2 (ja) 1996-12-06 1996-12-06 走査型露光装置の調整方法及び該方法を使用する走査型露光装置

Country Status (2)

Country Link
US (1) US6310680B1 (enExample)
JP (1) JP3728613B2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI283798B (en) * 2000-01-20 2007-07-11 Asml Netherlands Bv A microlithography projection apparatus
JP2001265000A (ja) * 2000-03-16 2001-09-28 Toray Eng Co Ltd レーザー露光装置
US7561270B2 (en) * 2000-08-24 2009-07-14 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
TW527526B (en) * 2000-08-24 2003-04-11 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
US6753963B1 (en) * 2000-10-26 2004-06-22 General Phosphorix Method of calibration of magnification of optical devices
JP4191923B2 (ja) 2001-11-02 2008-12-03 株式会社東芝 露光方法および露光装置
SG183572A1 (en) 2003-02-26 2012-09-27 Nikon Corp Exposure apparatus, exposure method, and method for producing device
EP1467253A1 (en) * 2003-04-07 2004-10-13 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2004092833A2 (en) * 2003-04-10 2004-10-28 Nikon Corporation Environmental system including a transport region for an immersion lithography apparatus
CN103383527B (zh) 2003-04-10 2015-10-28 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
KR101296501B1 (ko) 2003-07-09 2013-08-13 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP3959383B2 (ja) 2003-10-17 2007-08-15 株式会社東芝 露光装置補正システム、露光装置補正方法及び半導体装置製造方法
JP4400200B2 (ja) * 2003-12-10 2010-01-20 セイコーエプソン株式会社 画像表示方法、画像表示装置および画像表示プログラム
US8111373B2 (en) 2004-03-25 2012-02-07 Nikon Corporation Exposure apparatus and device fabrication method
JP4495726B2 (ja) * 2004-06-08 2010-07-07 株式会社アドバンテスト イメージセンサ用試験装置
TWI396225B (zh) 2004-07-23 2013-05-11 尼康股份有限公司 成像面測量方法、曝光方法、元件製造方法以及曝光裝置
JPWO2007043535A1 (ja) * 2005-10-07 2009-04-16 株式会社ニコン 光学特性計測方法、露光方法及びデバイス製造方法、並びに検査装置及び計測方法
JP5006711B2 (ja) * 2007-06-27 2012-08-22 キヤノン株式会社 露光装置、露光方法及びデバイス製造方法
JP6338377B2 (ja) * 2014-01-08 2018-06-06 キヤノン株式会社 露光装置、および物品の製造方法
JP2018045060A (ja) * 2016-09-13 2018-03-22 キヤノン株式会社 照明装置、露光装置及び物品の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5117255A (en) 1990-09-19 1992-05-26 Nikon Corporation Projection exposure apparatus
US5473410A (en) 1990-11-28 1995-12-05 Nikon Corporation Projection exposure apparatus
US6078380A (en) * 1991-10-08 2000-06-20 Nikon Corporation Projection exposure apparatus and method involving variation and correction of light intensity distributions, detection and control of imaging characteristics, and control of exposure
JP2946950B2 (ja) * 1992-06-25 1999-09-13 キヤノン株式会社 照明装置及びそれを用いた露光装置
US5591958A (en) * 1993-06-14 1997-01-07 Nikon Corporation Scanning exposure method and apparatus
JP3255312B2 (ja) * 1993-04-28 2002-02-12 株式会社ニコン 投影露光装置
US5581324A (en) 1993-06-10 1996-12-03 Nikon Corporation Thermal distortion compensated projection exposure method and apparatus for manufacturing semiconductors
JP3374991B2 (ja) 1993-06-14 2003-02-10 株式会社ニコン 投影光学系の調整方法、露光方法、及び露光装置
JP3451604B2 (ja) 1994-06-17 2003-09-29 株式会社ニコン 走査型露光装置
JPH08115872A (ja) 1994-10-13 1996-05-07 Nikon Corp 露光装置
US5739899A (en) 1995-05-19 1998-04-14 Nikon Corporation Projection exposure apparatus correcting tilt of telecentricity

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Publication number Publication date
JPH10172878A (ja) 1998-06-26
US6310680B1 (en) 2001-10-30

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