TWI283798B - A microlithography projection apparatus - Google Patents

A microlithography projection apparatus Download PDF

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Publication number
TWI283798B
TWI283798B TW089127977A TW89127977A TWI283798B TW I283798 B TWI283798 B TW I283798B TW 089127977 A TW089127977 A TW 089127977A TW 89127977 A TW89127977 A TW 89127977A TW I283798 B TWI283798 B TW I283798B
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TW
Taiwan
Prior art keywords
projection
radiation
projection system
pattern
optical element
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TW089127977A
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Chinese (zh)
Inventor
Johannes Catharinus Hu Mulkens
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Asml Netherlands Bv
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70066Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70191Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)

Abstract

A microlithography projection apparatus comprises an illuminator, for supplying a beam of radiation for illuminating a pattern on a mask, and a projection system for forming an image of the illuminated portion of the mask on a resist-coated substrate. The image is projected off-axis with respect to the optical axis of the projection system and the aperture of the illuminator is minimized to that of the illuminated portion of the mask. The illuminator is provided with a compensator, such as a tillable mirror or wedge-like transmissive optical element for compensating for telecentricity errors intrinsic to the projection system.

Description

12837981283798

1283798 五 發明說明(2) ·----- 原理為(例如)’反射面之定址區域將入射 夫ί:J “如:予以反•’而未定址之區域則將入射光如 射。運用—適當的遽波器,該未繞射 光可自反射光束中予以過滹,σ 下,根據矩陣式可定址面:c光;㈣種情況 可用適當的電子裝置產生所需要二彳使2束具有圖樣。 更多與該等鏡陣列有關的f 、矩陣式定址。可搜集到 5,523 r9m如/美國專利娜 …可程式化LCD陣列。該結=於考。, 娜”咖中,收錄於^ 為了間早起見,本文^彳# jfcp 含-面罩桌及面罩之範二:些地方單問包 理應可在上述圖案裝置之較廣所討論之-般原 為了簡單起見,本投影系 、 而此名稱必須廣泛地;:乂解二::視為"透鏡"·’然 γ例如折射光學、反射光種類之投影系 以rr般包含-照明系統 G s很據廷些設計型式Φ 作之元件以導*、塑造或可:種而運 件亦可共同地或單獨地視為如下之"透鏡r先t:該等元 置可為一具有兩個或更 另外,微影裝 ”之型式。在該等"多重個層先級罩^;或==多個基 以平行地使用’或預備步驟可在一個或多桌子可予 成而一個或多個其它卓/個桌子上予以完 杲子則用於曝先。雙層級微影裴置1283798 5 invention description (2) ·----- The principle is (for example) 'the address area of the reflecting surface will be incident ί:J "such as: to be reversed" and the unaddressed area will be incident light. - a suitable chopper, which can be over-reduced from the reflected beam, σ, according to the matrix-addressable surface: c-light; (d), the appropriate electronic device can be used to generate the required two-pronged More f and matrix addressing related to these mirror arrays can be collected into 5,523 r9m such as / US patent Na... programmable LCD array. The knot = in the test., Na", included in ^ As early as possible, this article ^彳# jfcp contains - mask table and mask 2: some places should be discussed in the above-mentioned pattern device - the original original for the sake of simplicity, the projection system, and this The name must be extensive;: 乂二二:: as a "lens"·' γ, such as refractive optics, the projection of the type of reflected light is included in the rr--the illumination system G s is based on some design patterns Φ Components can be guided, shaped or can be: species and transport can also be common or single The sole view is as follows: lens r first t: the element can be a pattern with two or more, lithography. In these "multiple layers of precedence cover ^; or == Multiple bases may be used in parallel or 'preparation steps' may be used to expose one or more tables and one or more other tables/pieces for exposure. Two-layer lithography

第6頁 1283798 五、發明說明(3) 述於’例如’ US 5, 96 9, 44 1和US序號0 9/280, 0 1 1,收錄於 1 998 年2 月 27 日(WO 98/2 866 5 和 WO 9 8/40 79 1 ),並收錄於 此供作參考。 、+微影投影裝置可用於,例如,製作積體電路(丨Cs )。在 這種情況下,圖樣裝置可根據丨c之一個別層產生一電路圖 樣\且該圖樣可投射於塗有一層光阻材料(阻質)之基底 L夕曰曰圓)上之之目標部分(包含一或多個晶粒)。一般而 吕’一單一晶圓乃包含鄰近目標部分之整個網路,持續性 地;I由投影系統予以照射,一次一個。在現今的裝置中, 藉著光罩桌上之一光罩而製作圖樣,可於兩個不同型式之 機器中產生對比。在一種微影投影裝置中,每一個目標部 刀乃藉著將整個光罩圖樣曝光於該目標部分以一次完成整 個照射;此一裝置一般乃視為一晶圓步進機。在另一裝置 (一般視為一步進並掃描裝置或掃描機)中,每一個目標部 分乃依一給定參考方向掃描”方向)以投影光束漸近式地 掃描光罩圖樣而予以照射,同時平行於或反平行於此方向 同步地掃描基底桌;一般而言,因為投影系統具有一放大 因子Μ(—般小於1 ),掃描基底桌時之速度v乃因子M與掃描 光罩桌時速度之乘積。更多與此處所述之微影裝置有關的 資訊可自’例如US 6,〇 4 6,7 9 2,予以搜集,並收錄於此以 供參考。 隨著在更高密度下投射永遠較小之特徵(feature)之需 求增加’需要使用較短波長之輻射,例如具有丨5 7 nm或Page 6 1283798 V. Description of invention (3) described in 'for example' US 5, 96 9, 44 1 and US serial number 0 9/280, 0 1 1, included in February 28, 998 (WO 98/2) 866 5 and WO 9 8/40 79 1), which are incorporated herein by reference. The + lithography projection device can be used, for example, to make an integrated circuit (丨Cs). In this case, the pattern device can generate a circuit pattern according to one of the layers of the layer c, and the pattern can be projected onto the target portion coated with a layer of photoresist (resistance). (contains one or more grains). Typically, a single wafer contains the entire network adjacent to the target portion, continuously; I is illuminated by the projection system, one at a time. In today's devices, a pattern is created by a reticle on the reticle table to create contrast in two different types of machines. In a lithographic projection apparatus, each of the target knives performs the entire illumination at a time by exposing the entire reticle pattern to the target portion; this device is generally regarded as a wafer stepper. In another device (generally referred to as a step-and-scan device or scanner), each target portion is illuminated by a projection beam asymptotically scanning the reticle pattern in accordance with a given reference direction scanning "direction" while being parallel to Or scanning the base table synchronously in parallel with this direction; in general, because the projection system has an amplification factor — (generally less than 1), the velocity v when scanning the base table is the product of the factor M and the velocity of the scanning reticle table. Further information relating to the lithography apparatus described herein can be collected from, for example, US 6, 〇 4 6, 7 9 2 and is hereby incorporated by reference. The increased demand for smaller features requires the use of shorter wavelength radiation, for example with 丨 5 7 nm or

五、發明說明(4) 的問題’會降低投影裝置之性能 理由,第-,用於產生較短波長的產生有兩個 長的涵蓋範圍較=第:此色性較少且其波 :某介之波長之折射係數之分散:: = 曲=射 ΐ =梯度广而使得媒介較為分散,而產 色像差。-解決此問題之方法乃設m生遞曰的形 例如組合透鏡元件,該等元件:的投影透鏡, 由八不冋刀放關係之透鏡材料所構成, 且 彩色像差。然而,這會辦加透$糸 本貝上除去V. The problem of the invention (4) 'will reduce the performance of the projection device, the first -, for the generation of shorter wavelengths, there are two long coverages = the first: this color is less and its wave: some The dispersion of the refractive index of the wavelength:: = 曲 = ΐ ΐ = a wide gradient makes the medium more dispersed, and the color is aberration. The method for solving this problem is to design a shape such as a combined lens element, which is composed of a lens material of a knives and a chromatic aberration. However, this will be done by adding $糸

透鏡糸統之複雜度與費用,因 為而要兩個不同的媒介。同樣地,當使 U 光線時會使可能之折射媒介之數 /、有較短波長之 丨⑴邮" < 数目遞減。這一 色之投影透鏡變得非常困難。 ·、 …、 使用一反折光透鏡系統為另一替代方案, 射光學元件。使得一單一的材料可用於所有的透鏡二反 而’在某些投影系統設計中使用反射元件意指一影像=須 偏離主軸予以投影以避免部分影像被系統中的特定元件所 混淆。這表示該投影影像未延伸到投影系統之光軸(即 央)。可於例如US 5,537,26 G,找到—反折光透鏡之實施 例,收錄於此以供參考。 、 然而,此一投影系統一般具有一固有的遠距中央誤差。 在一偏離主軸投影系統中同時補償此誤差並使照明系統的 尺寸最小乃一問題。 發明概述 1283798 五、發明說明(5) 本發明之 型顯微微影 根據本發 影投影裝置 軸予以投影 差之補償裝 本補償器 部分’在' 光束橫跨投 如上所解 之平面中受 換。較佳地 之光轴並偏 央。得以使 較佳地, 照明系統補 正 ° 較佳地, 差補償。 較佳地, 一照明器中 距中央誤差 雖然反射 償遠距誤差 一目的乃提 投影裝置。 明提供一如 ,其排置為 ’其中另含 置(Π補償器 使投影系統 偏離主軸投 影系統偏離 釋,因為圖 照射之區域 ’照明器之 離其主車由, 照明器與其 補償器對照 償投影系統 供 <避免或排除上述問題之改良 述之使用中之顯微微 偏離該投影系統之光 用於補倾投影系統之遠距中央誤 開平文件所詳 ,圖樣光束乃 之遠距中央誤差得以 影系統中,例如反折 主軸,以避免該像差 樣光束乃偏離主軸予 亦須依投影系統之光 光軸乃橫向位移而平 且在本質上對準該受 透鏡和光學元件之尺 明器之突現光軸乃呈 中之遠距誤差而言乃 校正成 光且圖 0 以投影 軸予以 行於投 照射區 寸變得 傾斜。 較為簡 ,至少 樣投影 ,光罩 橫向置 影系統 域之中 最小。 這對使 單的修 本補核裔乃可傾斜的,可用於調整遠距中央誤 本補償器包 的鏡並使一 之雙重功能 έ 一反射元件 預存鏡具有使 元件,如一鏡 ’亦可使反射 ’ 一般為平 元件具有一 。能夠包含,例如, 光束轉向以及校正遠 面型’乃用於粗略補 非平面外觀,以使遠The complexity and cost of the lens system requires two different media. Similarly, when the U ray is made, the number of possible refracting media /, which has a shorter wavelength, is decremented by the number of quotients. This color projection lens becomes very difficult. ·, ..., using an inverted refractive lens system as an alternative to injecting optical components. This allows a single material to be used for all of the lenses. Instead, the use of reflective elements in some projection system designs means that an image = must be projected off the spindle to avoid partial image confusion by specific components in the system. This means that the projected image does not extend to the optical axis (i.e., the center) of the projection system. An embodiment of a refractive lens can be found, for example, in U.S. Patent 5,537,26, the disclosure of which is incorporated herein by reference. However, such a projection system typically has an inherent distance center error. It is a problem to compensate for this error and minimize the size of the illumination system in an off-axis projection system. SUMMARY OF THE INVENTION 1283798 V. DESCRIPTION OF THE INVENTION (5) Microscopic lithography of the present invention The compensation of the compensator portion is replaced in the plane in which the beam is split as described above, according to the projection of the projection device. Preferably, the optical axis is off-center. Preferably, the illumination system is compensated for, preferably, poorly compensated. Preferably, the center distance error of a illuminator is reflected by the distance compensation error. As shown in the figure, it is arranged as 'the other one is included (the compensator makes the projection system deviate from the spindle projection system, because the area of the illumination is away from the main vehicle, the illuminator and its compensator The projection system is used to <avoid or eliminate the above-mentioned problems. The use of the microscopic deviation from the projection system is used for the remote central misalignment of the projection projection system. In a shadow system, such as a reflex spindle, to prevent the aberration-like beam from deviating from the main axis and also to laterally displace the optical axis of the projection system and to substantially align the lens and the optical element with the ruler The emerging optical axis is corrected to light in the case of the long-distance error in the middle and the image is tilted in the projection area by the projection axis. Simplicity, at least the projection, in the reticle lateral mapping system domain The smallest of these can be used to adjust the mirror of the remote central error compensator package and make a dual function. The pre-stored mirror has an element such as a mirror 'or a reflection' that is generally a flat element having one. It can include, for example, beam steering and correcting the far type to be used to roughly complement the non-planar appearance to

第 頁 1283798 五、發明說明(6) 距中央補償隨 根據本發明 輸光學元件。 鏡之一部分。 當的對稱而提 透鏡使楔型部 本裝置包含一 單一透鏡獲得 根據本發明 中,此楔型光 住光罩或在本 央誤差補償在 上入射/射出 (decentered 根據本發明 下步驟: k供一至少 -提供一使用 一使用圖樣裝 束; 著光束 之另一 此楔型 優點為 供遠距 分插入 偏離主 多於一 之一目 學元件 質上與 本質上 光束之 field) 之另一 的位置 目的, 光學元 透鏡可 中央誤 光束路 軸投影 個楔型 的,在 乃置於 其結合 需要以 角度調 透鏡) 目的, 而改變。 補償器乃較佳地包含 件乃較佳地包含一輔 、,+技術予以製造 是之精確補償,且可 徑以補償遠距中央誤 系,。一新的額外優 光學元件補償器。 二使用光罩桌之具體 取接近在使用時由該 之位置上。其優點為 橫跨光罩之位置為函 整(即補償器乃作為一 〇 提供一元件製造方法 〜楔型傳 助對稱 ,撂 槔著 差, 透 適 切開儘營 A ^ 由一層輻射敏感材料所部分覆蓋的 一照明系統之輻射投影光束; 置在其橫切面中提供具有一圖樣之 汽施例 光f桌托 ,遠距中 數,光罩 一偏轴場 ’包含如 基底; 投影光 -將輻射之圖樣光束投影至該層輻射敏感材料 上, 之目標區域 其中,在製作圖樣之前,圖樣光束乃偏離該投影系統之光 軸予以投影,且施以一補償以補償投影系統之遠距中央误P. 1283798 V. INSTRUCTIONS (6) Offset central compensation according to the invention. One part of the mirror. When the symmetry of the lens is such that the wedge-shaped device comprises a single lens, according to the invention, the wedge-shaped light is incident on the reticle or at the center of the error compensation is incident/ejected (decentered according to the present invention: k One at least - providing a use of a pattern to be used; another wedge type advantage of the beam is that the remote insertion is offset from the position of the main more than one of the objective elements and the field of the beam in nature. The optical element lens can be changed by the central mis-beam path axis projecting a wedge type, which is required to be angled to adjust the lens. Preferably, the compensator is preferably comprised of a secondary, + technology that is precisely compensated for, and is sized to compensate for remote central misconnections. A new extra-optimal optics compensator. 2. The specific use of the reticle table is close to the position at the time of use. The advantage is that the position across the reticle is a function (that is, the compensator is provided as a 制造 一 元件 〜 〜 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 楔 ^ ^ ^ ^ ^ ^ ^ ^ ^ a partially covered illumination projection beam of an illumination system; disposed in a cross-section thereof to provide a vapor-applied light table table with a pattern, a distance median, a reticle-offset field 'contains as a substrate; projection light-will The radiation pattern beam is projected onto the radiation sensitive material of the layer, wherein the pattern beam is projected off the optical axis of the projection system before the pattern is created, and a compensation is applied to compensate for the remote central error of the projection system.

12837981283798

差0 f f用一根據本發明之微影投影裝置進行製作過程 一圖樣(例如在一光單中)乃投射至一至少由一層能铋 材料(阻質)所部分覆蓋之基底上。在投射步驟之前,j 士已經過許多程序,例如印刷、塗上阻質及軟性烘烤:: =後,可將基底施於其它程4,例如一後曝光烘烤* (PEB),顯影,一硬性烘烤以及投射特徵之量測/檢 此程序陣列乃用於製作一元件之個別層之圖樣,例如I ◦。 此一圖樣層接著經過不同的製程,如蝕刻,離子佈植(摻 雜),金屬化,氧化,化學機械研磨等等,所有用於完^ 個別層之製程。若需要許多層,每一新層皆必須重複其程 序,或改變後之程序。最後,一元件陣列將呈現於基底 (曰a圓)上。這些元件接著可介由如切割或切鋸等技彳标予以 彼此分開,因此可將個別元件鑲嵌至載體、連接至針腳等 專。關於此類製程之其它資訊可得自,例如,書名”微晶 片裝作·對半導體製程之實用指南”,第三版,皮爾范詹 特,麥克威爾出版公司,1997,ISBN 0 - 07-067250 -4,收 錄於此以供參考。 雖然在本文中對製作I Cs時所使用之根據本發明之裝置 使用到特定的參考文獻,必須明確地瞭解此一裝置具有許 多其它可能之應用。例如,可用於製作積體光學系統、用 於磁域記憶體之導波管及偵測圖樣、液晶顯示面板、薄膜 磁頭等等。本行人士可領會到,在此類其它應用之上下文 中,任何本文中所用到的名稱”分劃板”,"晶圓"或”晶粒”The difference 0 f f is performed by a lithography projection apparatus according to the present invention. A pattern (e.g., in a light sheet) is projected onto a substrate partially covered by at least one layer of enamel material (resistance). Prior to the projection step, J has already had many procedures, such as printing, applying resist and soft baking:: =, the substrate can be applied to other processes 4, such as a post-exposure bake* (PEB), development, A rigid baking and measurement/detection of the projected features is used to create a pattern of individual layers of a component, such as I ◦. This pattern layer is then subjected to different processes such as etching, ion implantation (doping), metallization, oxidation, chemical mechanical polishing, etc., all of which are used to complete the individual layers. If many layers are required, each new layer must repeat its program, or change the program. Finally, an array of components will be presented on the substrate (曰a circle). These elements can then be separated from one another by techniques such as cutting or sawing, so that individual components can be inlaid into the carrier, attached to the pins, and the like. Additional information on such processes is available, for example, in the title "Microchip Mounting, A Practical Guide to Semiconductor Manufacturing," Third Edition, Pierre Van Jent, McWilli Publishing, 1997, ISBN 0 - 07- 067250 -4, which is hereby incorporated by reference. Although a specific reference to the apparatus according to the present invention used in the production of I Cs is used herein, it must be clearly understood that the apparatus has many other possible applications. For example, it can be used to fabricate integrated optical systems, waveguides and detection patterns for magnetic domain memories, liquid crystal display panels, thin film magnetic heads, and the like. The Bank can appreciate that in the context of such other applications, any of the names used in this article are "reticle", "wafer" or "grain"

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必須分別視為由更一般的名稱”光罩”,”基底”及”目 分”所取代。 ^ 知部 在本文件中’名稱輻射,輻射光束及光束在原則上乃 於包含所有型式之電磁輻射,包含紫外光輻射(例如具有吊 波長365、24 8、193、157nm 或 126nm)與EUV。 乂、 圖示簡單說明 之具體實施 現在將只以實施例並配合其附圖說明本發明 例,其中: 圖1描繪一根據本發明之一具體實施例之微影投影裝 圖2 ( a )和(b )分別為描述非遠距中央與遠距中央 透鏡系統圖; 仅影 圖3描述關於偏離主軸之照明系統之一投影系 土 誤差; 、遂距 圖4表示根據本發明内含可傾斜鏡遠距誤差補償 一照明器與投影系統;以及 、之 圖5表示一内含楔型遠距誤差補償裝置之照 系統。 杈影 在這些圖中,相同的參考符號或編號代表相同的 較佳實施例之說明 " 圖1描繪一根據本發明之微影投影裝置。本裝置包含: •輻射系統LA, Ex, IL,用於提供一輻射之投影光 PB(例如UV或EUV輻射); 〜 • 一第一接物(〇b ject)桌(光罩桌)MT,具有用於托住一It must be treated separately by the more general name "mask", "base" and "point". ^ Knowing the Department In this document 'name radiation, the radiation beam and beam are in principle containing all types of electromagnetic radiation, including ultraviolet radiation (eg having a suspension wavelength of 365, 24, 193, 157 nm or 126 nm) and EUV. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT OF THE INVENTION The present invention will now be described by way of example only and with the accompanying drawings in which: FIG. 1 depicts a lithographic projection assembly 2(a) according to an embodiment of the present invention and (b) are diagrams depicting non-distant central and remote central lens systems, respectively; only Figure 3 depicts projection soiling errors for one of the illumination systems that deviate from the major axis; and FIG. 4 shows a tiltable mirror according to the present invention. The remote error compensates for a illuminator and projection system; and Figure 5 shows a illumination system incorporating a wedge type remote error compensation device. In the figures, the same reference numerals or numerals denote the same description of the preferred embodiment " Fig. 1 depicts a lithographic projection apparatus in accordance with the present invention. The device comprises: • a radiation system LA, Ex, IL for providing a projected projection light PB (for example UV or EUV radiation); ~ a first substrate (mask table) MT, Have a hold for one

第12頁 1283798 五、發明說明(9) 光罩MA (例如一分劃板)之光罩支托物· • 一第二接物桌(基底桌)WT,具有用於托住一基底 w(例如一塗有阻質之矽晶圓)之基底支托物. 或 • 一^影系透鏡")PL(例如一折射或反折光 於將一光罩心之輕射部分投射至-基《之 目才示口 ρ刀c (包含一個或更多個晶粒)。 ΪΓ所:而本與裝置乃具有一傳輪型式(即具有-傳輸光 ^呈/而’舉例來說(具有1射光罩),-般而言,1 亦具有一反射型式。 /、 本幸δ射系統包含一可產峰—Α-,,. 干 幸田射光束之光源LA(例如一 水k或切割(excimer)雷射)。此光束乃 (condi tioning)裝 f 之德射入 ^ ^ 垆展哭p ng"、置之後射入-照明系統IL Μ列如-光束 Γη。2 /和/或内部輻射範圍(即分別為CT名部和(7内 一 夕,一般包含許多其它元件,例如一積算器IN和 而呈古為。依此方式,照射至光罩MA之光束PB在其橫切 面具有所需的均勻性與強度分佈。 、關於圖1光源U通常介於微影投影裝置之外罩内 与浐M ai通吊在光源U為一汞燈之情況下),但亦可遠離微 置’其產生之輕射光束乃導入該裝置内(例如介 切^ : μ導向鏡);此最近的方案通常發生在光源LA為一 案σ。田、的情況下。本發明與申請專利範圍包含此二種方 *束ΡΒ接著截斷支托於一光罩桌上光罩支托架中的光Page 12 1283798 V. INSTRUCTIONS (9) Photomask holder for mask MA (for example, a reticle) • A second tray table (base table) WT, which is used to hold a substrate w ( For example, a substrate support coated with a resistive silicon wafer. or a film lens ") PL (for example, a refraction or a refraction to project a light-emitting portion of a photomask to a base) The purpose is to show the mouth knife c (including one or more crystal grains). The present invention and the device have a transmission type (ie, have - transmit light / / / 'for example (with 1 light Cover), in general, 1 also has a reflection type. /, The lucky δ-ray system contains a peak that can be produced - Α-,,. The light source of the beam of Koshiro (such as a water k or cut (excimer) Laser). This beam is con- singed into the ^ ^ 垆 哭 p p ng", after the injection-illumination system IL Μ column such as - beam Γ η. 2 / and / or internal radiation range ( That is, respectively, the CT name and the 7th day, usually containing many other components, such as an accumulator IN and an ancient. In this way, the light beam PB irradiated to the mask MA is The cross-section has the required uniformity and intensity distribution. With respect to Figure 1, the light source U is usually in the outer cover of the lithography projection device and the 浐M ai is suspended in the case where the light source U is a mercury lamp, but can also be far away. The micro-light beam generated by the micro-input is introduced into the device (for example, a cut: μ guide mirror); this recent solution usually occurs when the light source LA is a case σ. Tian, in the case of the present invention and the patent application The range includes the two types of beams, and then the light that is supported in the reticle holder of a reticle is cut off.

1283798 五、發明說明(10) 罩MA。橫切光罩^之後,光束PB通過透鏡儿 …標部分C上。藉著干涉置換與量測“ 二I二# :pV乂精確地移動’例如便於將不同目標區域C 先束PB之路徑中。類似地’第-定位裝置可用於依 =束PB之路徑將光罩㈣以精確地定位,例如了】= f Liί:Α予以機械恢復之後或在-掃描㈣。-般而 :短;二t 口之移動乃介由一長擊㈣ 繪。然而、”Λ λ位)予以實現’圖1未明確地予以描 _ ^ w j阳圓步進機(相對於一步進並掃描裝置)而 5 ’先罩桌μτ恰可連接至-短擊促動器,或可予以固定。 所描緣的裝置可用於兩種不同的模式: 予以固 予以π旦/ 影像乃以整次(one go)(即單一丨丨閃光") 方向二使;:標部分C上。基底桌訂接著延著X及/心 2.在掃描模于式中不目:部分C:由光束PB所照射; 單一"閃光"予;^貝上除了給疋的目標部分C益未以〆 以一速度mIΐ外乃應用相同的方案。光罩桌0反而 例如X方向向移動(所謂的”掃描*向"、 描整個光罩影:又2束?(現在-般具有裂縫的裂式)掃 或相反方為基= 1/5)。在此方式中:、-較大的通常:二4ί 須犧牲解析度。 知哔刀C可予以曝光而+ 圖2U)及(b)描述用於於一第二平面",如一塗有陴質1283798 V. Description of invention (10) Cover MA. After the reticle is cut, the light beam PB passes through the lens portion C. By interfering with displacement and measurement "two I two #: pV乂 accurately moving", for example, to facilitate the different target areas C to be bundled in the path of PB. Similarly, the 'first-positioning device can be used to illuminate the path according to the beam PB The cover (4) is precisely positioned, for example, = f Liί: Α after mechanical recovery or in-scan (four). - like: short; two t mouth movement is drawn by a long stroke (four). However, "Λ λ position ) to achieve 'Figure 1 is not explicitly described _ ^ wj positive round stepper (relative to a step and scan device) and 5 'first cover table μτ can be connected to - short-stroke actuator, or can be fixed . The device being traced can be used in two different modes: to apply π dan / image in one go (ie a single 丨丨 flash ") direction 2;: on the part C. The base table is then extended by X and / heart 2. In the scanning mode, the object is not visible: part C: is illuminated by the light beam PB; single "flash"is; ^ besides the target part of the 疋 C The same scheme is applied at a speed mI. The reticle table 0 moves, for example, in the X direction (so-called "scanning * direction", describing the entire reticle shadow: another 2 bundles? (now a crack with a crack) sweep or the opposite side = 1/5 In this way: - Larger usually: Two 4 ί must sacrifice resolution. Knowing knives C can be exposed while + Figure 2U) and (b) are used for a second plane " Tannin

第14頁 1283798Page 14 1283798

之晶圓表面,形成—第一平面12,如一呈 表面,之影像之投影系統10。圖2(a)表;二1之=^板 ,。。此處名稱"非遠距中心;:種,=距2投 衫像形成輻射光束之光線(發自表面12上之一 5 和“之平均夾角本質上偏離9〇。。因此,若二^或平 曰:圓沿=鏡之光軸上下移動,影像會左右移動:如圖 前號所*。底下,我們將該平均角度視 3 束夾角"。相對於圖2(a)之投影系統1〇,圖2(b)中The surface of the wafer forms a first plane 12, such as a surface-projection image projection system 10. Figure 2 (a) table; two 1 = ^ board,. . Here the name "non-distance center;: species, = the distance between the 2 shirts and the light beam forming the radiation beam (from one of the surfaces 5 on the surface 12 and "the average angle is essentially deviated by 9 〇.. Therefore, if two ^ Or flat: The edge of the circle = the optical axis of the mirror moves up and down, the image will move left and right: as shown in the figure above. Below, we will see the average angle as the angle of the 3 beams. Relative to the projection system of Figure 2 (a) 1〇, in Figure 2(b)

=乃J距中央:目卜影像形成光束與平面12二 斤形成之平均光束夾角122和142(圖2(b)中)在本質上為 Μ 。因此,不淪是移動接物平面或影像平面皆不會影響 =像位置。舉例而言,若平面12上下移動,不論其曰靠近曰或 遂離聚焦皆不會使影像位置左右移動。舉例而言,覆蓋連 續之微影層時,此種安排顯然是具有優點的。= is the distance from the center: the average beam angles 122 and 142 (in Figure 2(b)) formed by the image forming beam and the plane 12 jin are essentially Μ. Therefore, it does not matter whether the moving object plane or the image plane does not affect the image position. For example, if the plane 12 moves up and down, the image position will not move left or right regardless of its proximity or focus. Such an arrangement is obviously advantageous, for example, when covering a continuous lithography layer.

然而,一實際的投影透鏡系統是不可能具有完全遠距中 央的。總是存在一些小的殘留之遠距中央誤差。於一遠距 投影系統10之接物面(面對表面12之面)與投射面('面對表 面14之面)兩者,圖2b中的平均光束夾角122和142乃偏離 (輕微)90。。此偏離,代表遠距中央誤差,顯示投影系統 之光軸0對點1 2 1之橫向定位的依存性。圖3代表一具有光 車由0之投影透鏡系統之平面圖,且同心圓2 〇、2 2、2 4和2 6 代表具本質相同之遠距中央誤差之輪廓線。作為一實施 例’輪廓線20至26以耄鉍(111丨丨1丨]:&(^311)(1111^(1)為單位之 夾角誤差分別具有值,如+1、〇、-1和2。這些代表在分劃However, an actual projection lens system is unlikely to have a completely remote center. There are always some small residual far center errors. At both the interface of the remote projection system 10 (the surface facing the surface 12) and the projection surface (the surface facing the surface 14), the average beam angles 122 and 142 in Figure 2b are offset (slightly) by 90. . . This deviation, representing the distance center error, shows the dependence of the optical axis 0 of the projection system on the lateral positioning of point 112. Figure 3 represents a plan view of a projection lens system having a light vehicle of 0, and concentric circles 2 〇, 2 2, 2 4 and 2 6 represent contour lines having substantially the same distance central error. As an embodiment, the contour lines 20 to 26 have values of 夹(111丨丨1丨]:&(^311)(1111^(1), respectively, having values such as +1, 〇, -1 And 2. These representatives are in the division

第15頁 1283798Page 15 1283798

五、發明說明(12) =別中的夾角誤差,但是當然會因投影透鏡系統之放大 刀子Μ而於晶圓級別中較大,例如M = 1/4時會大於四倍。 二明系統必須傳送一遠距中央校正照明光束,其中圖 1 0 +中的入射角1 2 3隨著橫向定位而變,以補償投影系統 固有的逖距中央决差。理論上,照明圖2 ( b )之點1 2 1 〇射光束乃指向性地使其平均光束夾角123恰好與投影 ^ ^遠!中央誤差所定義之平均光束夾角122匹配。然 ’除非提出預警,照明系統I L戶斤錄c刀 、土 丄丄 般不會與投影系統之遠距中央之逆距中央誤至一 名稱"補償裝置•,和"補償器補償"之概念 中央誤差之間不匹配之補償(即緩此和 1所用,乃意指該遠距 誤與=透鏡系統呈同軸,則該遠距中央 夹差乃王軸向對%,且補償亦因 由傳統透鏡予以提供。然而,如 為軸向對冑,使其可 軸之投影可令人滿意。矩形30代,一所解釋,使用偏離主 縫,偏離投影系統之光軸0。一妒^肽明系統之照明狹 孔徑之尺寸最小化並大到恰好.又以6言,使照明器之出口 利的。在此例中,照明系統之偏含狹縫影像30乃是有 中心之斷線圈(dashed circle) =場乃由以主軸〇’為 照明器之孔徑之圓圈32之直徑乃」、所標示。明顯地,代表 徑,例如圓圈2 6。 於投影系統孔徑之直 如圖3所示,照明器所提供之 之場32交錯之圓圈20、22、24及補償,與照明器 圖4表示一本發明用來補償纟之圓弧,乃非對稱性。 補仏非對稱性遠距中央偏離之具V. INSTRUCTIONS (12) = Angle error in the other, but of course it will be larger at the wafer level due to the magnification of the projection lens system, for example, M = 1/4 will be more than four times. The Erming system must transmit a remote centrally corrected illumination beam, where the angle of incidence 1 2 3 in Figure 10 + varies with lateral positioning to compensate for the center-to-center distance of the projection system. Theoretically, the point 1 2 1 of the illumination Fig. 2(b) beam is directed such that its average beam angle 123 coincides exactly with the projected beam angle 122 defined by the center error. However, unless an early warning is issued, the lighting system IL will not record the name of the reverse center of the projection system and the name of the offset system. "Compensation device•, and "Compensator compensation" The compensation of the mismatch between the central errors of the concept (that is, the use of the delay and the use of 1 means that the distance error is coaxial with the lens system, then the distance between the center and the center of the lens is the axial value of the king, and the compensation is also caused by Conventional lenses are provided. However, if the axial confrontation is used, the projection of the axis is satisfactory. Rectangular 30 generations, one explained, using the deviation from the main slit, offset from the optical axis of the projection system. The size of the illumination aperture of the Ming system is minimized and large enough. In 6 cases, the exit of the illuminator is favorable. In this example, the slit image 30 of the illumination system is a broken coil with a center. (dashed circle) = field is indicated by the diameter of the circle 32 of the aperture of the illuminator with the main axis 〇 '. It is obvious that it represents the diameter, such as the circle 2 6 . The aperture of the projection system is as shown in Figure 3. The illuminator provides a field 32 of staggered circles 20 22, 24 and compensation, and illuminator Figure 4 shows an arc used to compensate for the 纟, which is asymmetry.

第16頁 1283798Page 16 1283798

體貫施例。圖4表示一照明器40,包含光束成形光學器 4 2例如放大轴向模組,和一積算器,例如一飛眼透鏡 或:積算桿’場透鏡系統,分劃板光罩裝置46,以及附屬 之7刀劃板光罩透鏡系統4 8。照明器4 0提供-供作照明〆分 劃板50之輪射光束,接著用投影系統54將其影像投射至晶 圓5_2。入射至分劃板50之照明乃具有一狹縫形狀,以圖3 所=之矩形3 〇表示。分劃板5〇和晶圓52在此例中經過掃描 使得狹縫和其影像分別掃過分劃板5 0和晶圓52。照明器4〇 包含一鏡56。鏡56是可傾斜的,致使其夾角可經由選擇以 偏離照明光束(依此法,分劃板5 0上輻射之平均入射角1 23 不再為90。)以補償投射系統54之非環狀對稱性遠距中央誤 平面鏡5 6可用於提供(粗調)遠距中央誤差補償。然 而根據另一具體實施例,可設計(prof i led)鏡56之輪廓 以提供更精確之遠距φ水4/ 强I Μ π ^ ^ 中央块差補償,使其更加符合所需之 祆差補饧而侍以與投影系統1〇所固 匹配,如圖3所示。 决差有几吳扪 本勒明之另一具體實施例乃示於圖5。在本具施例 中,一,型傳輸光學元件58乃置於照明光束路、。 本具體實施例’元件58可簡單地為一用於工。; 中央誤差補償之楔型棱鏡 '然而,參考圖3」杻调)运: 如投影系統之孔徑相同之直徑所構成並以光=可 其轉作乃用於補償遠距中央誤差如,例如,..... 所示。透鏡之一部A可接著自一側邊 =廟線20 = 友除,足以覆盍Physical practice. 4 shows an illuminator 40 comprising a beam shaping optics 42 such as an amplifying axial module, and an integrator, such as a fly-eye lens or: an integrated rod 'field lens system, a reticle reticle assembly 46, and Auxiliary 7-knife reticle lens system 4 8. The illuminator 40 provides a laser beam for illumination of the reticle 50 and then projects its image to the circle 5_2 by the projection system 54. The illumination incident on the reticle 50 has a slit shape, which is represented by a rectangle 3 所 of Fig. 3. The reticle 5 and the wafer 52 are scanned in this example such that the slit and its image are swept through the reticle 50 and the wafer 52, respectively. The illuminator 4A includes a mirror 56. The mirror 56 is tiltable such that its angle can be selected to deviate from the illumination beam (in this way, the average angle of incidence of the radiation on the reticle 50 is no longer 90) to compensate for the acyclicity of the projection system 54. The symmetry long-range central misalignment mirror 56 can be used to provide (coarse adjustment) remote central error compensation. However, according to another embodiment, the contour of the mirror 56 can be designed to provide a more accurate distance φ water 4 / strong I Μ π ^ ^ central block difference compensation, making it more in line with the required coma The complement is matched with the projection system, as shown in Figure 3. There are several examples of the difference. Another specific embodiment of Benming is shown in Fig. 5. In the present embodiment, a type of transmission optical element 58 is placed in the illumination beam path. This embodiment' component 58 can be simply a workmanship. The central error compensated wedge prism ' However, refer to Figure 3 杻)): If the diameter of the projection system is the same as the diameter of the projection system and the light = can be converted to compensate for the remote central error, for example, ..... shown. One part of the lens can be followed by one side = temple line 20 = friend, enough to cover

1283798 五、發明說明(14) 照明器32之直徑或至少由狹縫3〇所 部分乃楔型且具有—以位置為函u。卩刀。透鏡之此 補償,一般無法以其它方法予 非對稱遠距中央誤差 有兩個楔型元件58可得自一單—衣造。使用此技術,至少 之輪廓使得在橫跨其之每一個位$ =透鏡。本楔型元件58 以偏離,能補償輪廓線20至26上 ’光束了由一夾角予 之遠距中央誤差。 (上返的)夾角值所給定 光學元件58在原則上可置於通過 之任何地方。在—具體實施例中,::40之先束路徑中 置位靠近分劃板50處。豆於是作A餅f所不,本元件乃 二般會影響-㈣厶;平:;;==鏡= 透鏡,橫向光束位置之函數,而不致大4響光= 1 :+:运距中央誤差補償包含調整分劃板5。上照= =,角1 23而為位置之函數,較佳地不致大幅影響眧明 ^束之孔徑(σ外部和σ内部設定)。所卩,一場透鏡、 ==精確函數(exact functiQn)。另外,光學元件^ 置於7刀劃板光罩裝置46的附近。在照明器40中的其它位置 上位置與夾角之間沒有相同的對比;例如,瞳孔 (Pi^pil)平面60對應分劃板5〇上光束分佈之傅立葉轉換, 使得平面60之位置對應分劃板5〇之入射角。因此更加難以 在告妝明為4 0中之一般位置上對遠距中央誤差提供適當的 補償。當然,楔型元件5 8可置於照明器4 0中之其它結合平 面上’因為結合平面之間夾角對位置的變化一致。 、‘;、、'、 圖4與5所示以及上述具體實施例之特徵可組合使1283798 V. DESCRIPTION OF THE INVENTION (14) The diameter of the illuminator 32, or at least the portion of the slit 3, is wedge-shaped and has a position as a function u. Scythe. This compensation of the lens is generally not possible by other methods. Asymmetric remote center error. Two wedge elements 58 can be obtained from a single piece. Using this technique, at least the contour is made at $= lens across each bit of it. The wedge element 58 is offset to compensate for the far center error of the beam on the contour lines 20 to 26 by an angle. The angle of the (upward) angle given by the optical element 58 can in principle be placed anywhere. In a particular embodiment, the :40 first beam path is placed near the reticle 50. Beans are then used as A cake f, this component will affect the same - (four) 厶; flat:;; = = mirror = lens, the function of the transverse beam position, without the big 4 ring light = 1 : +: the center of the distance The error compensation includes adjusting the reticle 5 . The upper photograph = =, the angle 1 23 is a function of position, and preferably does not significantly affect the aperture of the beam (σ external and σ internal setting). So, a lens, == exact function (exact functiQn). In addition, the optical element ^ is placed in the vicinity of the 7-blade reticle device 46. There is no identical contrast between the position and the included angle at other locations in the illuminator 40; for example, the pupil plane 60 corresponds to the Fourier transform of the beam distribution on the reticle 5, such that the position of the plane 60 corresponds to the division The incident angle of the plate 5〇. Therefore, it is more difficult to provide appropriate compensation for the far center error in the general position where the makeup is shown to be 40. Of course, the wedge elements 58 can be placed on other bonding planes in the illuminator 40' because the angle between the bonding planes is consistent with the change in position. , ';,, ', as shown in Figures 4 and 5, and the features of the above specific embodiments may be combined

第18頁 1283798 五、發明說明(15) 用;例如,一照明器4 0包含一可傾斜鏡及一楔型光學元 件。另外,或再者,楔型光學元件乃可傾斜的以調整遠距 中央誤差校正。 在本發明之特定具體實施例已描述如上的同時,可領會 到本發明可用上述之外的方法予以實現。本發明並不侷限 本說明。 mPage 18 1283798 V. Description of the Invention (15) For example; an illuminator 40 includes a tiltable mirror and a wedge type optical element. Alternatively, or in addition, the wedge-shaped optical element can be tilted to adjust for remote center error correction. While particular embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise. The present invention is not limited to the description. m

第19頁 1283798 圖式簡單說明 «ΓPage 19 1283798 Schematic description «Γ

第20頁Page 20

Claims (1)

1283798 案號 六、申請專利範圍 1 . 一種微影投影裝 - 一照明系統,1283798 Case No. 6. Patent application scope 1. A lithography projection device - an illumination system, 89127>7入 土 与月 I 日 Ρ7Γ ^~' P r-- 修正: 置,其包含: X" 其用於提供一輻射投影光束; 圖樣裝置,其用於根據一所需圖樣製作該投影光束 之圖樣; 用於托住一基底;及 影系統,其用於將圖樣光束投射至基 底之 其中 中央2. 一用 3. 軸乃 離其 4. 傾斜 的遠 5. 傾斜 6 . 含一 7. 一非8. 一目 ,另 誤差 如申 於支 如申 橫向 主軸 如申 於照 距中 如申 的, 如申 反射 如申 平面 如申 基底桌,其 偏離主軸投 標部分, 外包含一用於補償一該偏離主軸投影系統之遠距 之光學元件。 請專利範圍第1項之裝置,其中該圖樣裝置包含 托一光罩之光罩桌。 第1或2項之裝置,其中照明系統之光 本質上平行於投影系統之光軸,但偏 請專利範圍 位移,而在 請專利範圍 明系統之光 央誤差。 請專利範圍 使遠距中央 請專利範圍 元件。 請專利範圍 輪廓(prof i 請專利範圍 第1或2項之裝置,其中該光學元件乃 軸,用於補償一偏離主軸投影系統中 第4項之裝置,其中該光學元件乃可 誤差補償得以調整。 第1或2項之裝置,其中該光學元件包 第6項之裝置,其中該反射元件具有 1 e) 〇 第1項之裝置,其中該光學元件包含89127>7 Intrusion and Moon I Ρ7Γ ^~' P r-- Correction: Set, which contains: X" which is used to provide a radiation projection beam; a patterning device for making the projection beam according to a desired pattern a pattern; for holding a substrate; and a shadow system for projecting a pattern beam onto the center of the substrate. 2. Using 3. The axis is 4. The tilted distance 5. Tilt 6. Contains a 7. Non- 8. One item, another error such as Shen Yuzhi, such as the horizontal axis of the application, such as the application of the application in the distance, such as Shen Shen, such as the application plane, such as the base table, which deviates from the spindle bidding part, including one for compensation A remote optical component that deviates from the spindle projection system. The device of claim 1, wherein the pattern device comprises a reticle table of a reticle. The device of item 1 or 2, wherein the light of the illumination system is substantially parallel to the optical axis of the projection system, but the patent range is displaced, and the optical center error of the system is claimed. Please patent the scope to make the distance from the center. The scope of the patent range (prof i) is the device of claim 1 or 2, wherein the optical element is a shaft for compensating a device that deviates from item 4 of the spindle projection system, wherein the optical element is adjustable for error compensation The device of item 1 or 2, wherein the optical element comprises the device of item 6, wherein the reflective element has the device of item 1 e), wherein the optical element comprises O:\68\68546-950518.ptc 第21頁 1283798 _案號89127977_年月日__ 六、申請專利範圍 楔型傳輸光學元件。 9 .如申請專利範圍第8項之裝置,其中該楔型光學元件 包含一稜鏡板(prismatic plate)。 1 0 .如申請專利範圍第8項之裝置,其中該楔型光學元件 包含一本質上呈軸向對稱之透鏡之一部分。 1 1 .如申請專利範圍第8、9或1 0項之裝置,其中該光學 元件乃塗於一最靠近該圖樣裝置之位置,或一在本質上與 其結合之位置。 1 2 . —種元件製作方法,包含如下步驟: - 提供一至少由一層輻射敏感材料予以部分覆蓋的基 底; - 提供一用於一輻射系統之輻射投影光束; - 使用圖樣裝置在其橫切面提供一具有一圖樣的投影 光束;及 - 使用一偏離主軸投影系統將該輻射圖樣光束投射至 輻射敏感材料層之一目標部分, 其特徵在於光學元件乃用於補償該一該偏離主軸投影 系統之遠距中央誤差。 1 3. —種用於一微影投影裝置之照明系統,其用於提供 一輻射投影光束,在本質上由一偏離主軸投影系統製作圖 樣於或投射至一基底上,其中包含用於補償偏離主軸投影 系統之遠距中央誤差之光學元件。O:\68\68546-950518.ptc Page 21 1283798 _ Case No. 89127977_年月日日__ VI. Patent application range Wedge transmission optical components. 9. The device of claim 8, wherein the wedge-shaped optical element comprises a prismatic plate. 10. The device of claim 8 wherein the wedge-shaped optical component comprises a portion of a lens that is substantially axially symmetric. A device as claimed in claim 8, wherein the optical component is applied to a position closest to the patterning device or a position intrinsically bonded thereto. 1 2 . A method of fabricating a component comprising the steps of: - providing a substrate partially covered by at least one layer of radiation-sensitive material; - providing a radiation projection beam for a radiation system; - providing a cross-section of the surface using a patterning device a projection beam having a pattern; and - projecting the radiation pattern beam to a target portion of the radiation sensitive material layer using an off-axis projection system, wherein the optical element is adapted to compensate for the distance from the spindle projection system Distance from the center. 1 3. An illumination system for a lithographic projection apparatus for providing a radiation projection beam, essentially produced or projected onto a substrate by an off-axis projection system, including for compensating for deviations Optical component for remote central error of the spindle projection system. O:\68\68546-950518.ptc 第22頁O:\68\68546-950518.ptc Page 22
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KR100585461B1 (en) 2006-06-02
US20010012101A1 (en) 2001-08-09
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US6522387B2 (en) 2003-02-18
DE60128975D1 (en) 2007-08-02
DE60128975T2 (en) 2008-02-28

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