TW201022855A - Correction unit, illumination optical system, exposure apparatus and device manufacturing method - Google Patents

Abstract

An illumination optical system, for adjusting pupil intensity distribution to be uniform at every point on an illuminated surface repectively, is provided. A correction unit (9), for correcting pupil intensity distribution of an illuminated pupil of the illumination optical system, includes a first substrate (91) and a second substrate (92) disposed behind the first substrate (91). A first light-decreasing pattern is formed on an exit surface (91b) of the first substrate. A second light-decreasing pattern corresponding to the first light-decreasing pattern is formed on an incident surface (92a) of the second substrate. The relative positions of the first and second light-decreasing patterns can be varied. Corresponding to the variations of the relative positions of the first and second light-decreasing patterns and variations of incident angles of a light toward the first substrate, light-decreasing rates provided by the first and second light-decreasing patterns vary.

Description

201022855 32380pif.doc VI. Description of the Invention: [Technical Field] The present invention relates to a correction unit, an illumination optical system, an exposure apparatus, and a component manufacturing method. More specifically, the present invention relates to an illumination optical system suitable for an exposure apparatus for manufacturing an element such as a semiconductor element, a photographic element, a liquid crystal display element, a thin film magnetic head or the like by a lithography process.

[Prior Art] In such a typical exposure apparatus, light emitted from a light source is formed as a substance composed of a plurality of light sources via an optical lens which is an optical integrator (f|y eye lens). A secondary light source of a surface light source (usually a predetermined light intensity distribution on an illumination pupil). Hereinafter, the light intensity distribution on the illumination pupil is referred to as "a pupil intensity distribution". Further, an illumination pupil, It is defined as an effect of an optical system between an illumination pupil and an illuminated surface (a mask or a wafer in the case of an exposure device), so that the illuminated surface becomes a Fourier transform surface of the illumination pupil (F〇urier) The position of the transf〇rm surface. The light from the secondary light source is condensed by the condensing lens (c〇ndenserlens), and the reticle forming the prescribed _ case is superimposed and illuminated. The projection optical system is imaged on the wafer to project (transfer) the light 2=maSkpattem onto the wafer. The f-mask is formed to achieve high surface area, and in order to correctly transfer the fine pattern onto the 曰^ circle, a uniform illuminance distribution must be obtained on the wafer. In order to correctly transfer the fine pattern of the mask onto the wafer, there is a technique of "201022855 32380pif.doc" which is, for example, formed into an endless belt shape (a belt shape) or a multi-pole shape (a bipolar shape or a quadrupole shape). The pupil intensity distribution of the etc. improves the focus/focus or resolution of the projection optical system (refer to Patent Document 1). [Patent Document 1] US Patent Publication No. 2006/0055834 discloses that in order to faithfully transfer a fine pattern of a photomask onto a wafer, it is necessary not only to adjust the pupil intensity distribution to an intended shape, but also to be The intensity distribution of the pupils associated with each point on the wafer on the illuminated surface is adjusted to be substantially uniform. If the uniformity of the pupil intensity distribution at each point on the wafer is deviated, the line width of the pattern at each position on the wafer may be deviated, so that the reticle of the mask may not be faithfully performed with the expected line width. The pattern is transferred to the wafer throughout the entire exposed area. Further, regardless of the shape of the pupil intensity distribution formed in the illumination pupil, if the pupil intensity distribution associated with each point on the wafer as the final illuminated surface is sandwiched by the optical axis and separated in a predetermined direction If the difference in light intensity between a pair of spaced regions is too large, there is a fear that the pattern is exposed from the intended position and is exposed. SUMMARY OF THE INVENTION The developer who does not praise the problem of the upper jaw is provided with a bright optical system that can adjust the intensity distribution of the pupil at each point on the surface on the surface to be substantially uniform. Further, the present invention provides an exposure apparatus which can perform exposure under appropriate lighting conditions by using an illumination optical system in which the pupil intensity distribution at each point on the illuminated surface is substantially uniform. Further, the present invention provides an illumination optical system that can be spaced apart in a predetermined direction from the optical axis intensity distribution associated with each point on the illuminated surface. The light intensity difference of a pair of areas is adjusted. Moreover, the present invention provides an exposure apparatus that can adjust the intensity distribution of the pupil associated with each point on the illuminated surface, and maintains the optical sleeve in the predetermined direction. The above illumination optical system 'to perform a good exposure under appropriate lighting conditions. In order to solve the above problems, the first aspect of the present invention provides a correction unit that corrects a pupil intensity distribution of an illumination pupil formed in an illumination optical system, the correction unit including: a translucent second substrate disposed adjacent to An illumination element space between the optical element having a magnification on the front side of the illumination pupil and an optical element having a magnification adjacent to the rear side of the illumination pupil, and along the illumination a second thickness of the optical system having a predetermined thickness; and a second substrate having a light transmissive property disposed at a position rearward of the first substrate in the illumination pupil space, and having a predetermined value along the optical axis The thickness of the second substrate includes: a first matte pattern formed on at least one of a surface on an incident side of the light and a surface on an exit side of the light; the second substrate includes: the first extinction pattern a second matte pattern formed on at least one of a surface on the incident side of the light and a surface on the light emitting side, wherein the first matte pattern is opposite to the second extinction pattern The change in the relative position of the first substrate and the second substrate and the change in the incident angle of the light incident on the first substrate, the first extinction pattern and the second cancellation 201022855 32380pif.doc light The extinction rate produced by the pattern changes. The optical unit is provided with a correction unit that corrects the intensity distribution formed in the illumination pupil, and the correction sheet includes the first > the first light pattern, and the optical element having the magnification on the upper front side, =, ,,, An optical element having a magnification on the side of the crucible: a rear surface of the illumination pupil; a position on the rear side of the first illumination surface in the illumination space of the Lijin illumination, and being formed on the second surface parallel to the first surface The first matte pattern includes at least one i-th unit elimination surface; the second extinction pattern includes at least one second unit extinction region formed in the above-described at least one= field, and the first unit extinction region is searched for The - part is the same as the second one mentioned above: a part of the calendering area coincides. The third job of the well ίίϋ provides a kind of correction unit, which is in the illumination light, the system's glare _ 瞳 瞳 intensity distribution, the accompaniment of the correction, the first substrate, and the first substrate, which is arranged adjacent to the ray An optical element having a magnification and having a magnification, and an illumination pupil space between the optical element adjacent to the illuminating side of the illumination diaphragm and having a magnification, and having a predetermined thickness along the optical axis of the illumination optical system And the second substrate having the light transmittance = a position 1 which is placed on the rear side of the first substrate in the illumination pupil space has a predetermined thickness along the optical axis, and the first substrate is formed in the first substrate a first matte pattern on at least one of a surface on the incident side of the light and a surface on the side where the light is emitted, and the second substrate includes 201022855. The surface on the incident side of the light and the side on the light exit side of Joupif.doc a second matte pattern on at least one of the surfaces, the first matte pattern including at least one first unit extinction region, and the second extinction pattern including at least one second portion corresponding to the at least one first unit extinction region Bit extinction region, the first substrate and the second substrate are movable relative to the first direction transverse to the optical axis. According to a fourth aspect of the present invention, there is provided a correction unit that corrects a pupil intensity distribution of an illumination pupil formed in an illumination optical system, wherein the correction unit includes a translucent first substrate and is disposed adjacent to the illumination light An optical element having a magnification on the side of the crucible and an optical element having a magnification adjacent to the rear side of the illumination pupil and having a magnification, and having a predetermined optical axis along the illumination optical system a second substrate having a thickness and a light transmissive property disposed at a position on the rear side of the illuminating aperture space, and having a predetermined thickness along the optical axis, wherein the first substrate includes The first matte pattern ′ on at least one of the surface on the incident side of the light and the surface on the light emitting side includes at least one of a surface formed on the incident side of the light and a surface on the light emitting side. a second extinction pattern on the surface, the i-th extinction pattern includes at least one j-th unit extinction region, and the second extinction pattern includes a topography corresponding to the at least one first unit extinction region At least one second unit extinction region 'the first unit extinction region and the second unit extinction region apply a t-th extinction ratio to light incident on the second unit extinction region at a first incident angle, and The second incident light having the second incident angle different from the incident angle and incident on the first unit extinction region is given a second extinction ratio similar to the second extinction ratio 9 201022855 32380pif.doc, and the first substrate and the second substrate are The location relationship can be changed. According to a fifth aspect of the present invention, there is provided an illumination optical system for illuminating an illuminated surface by light from a light source, the illumination optical system comprising: a distribution creating optieal system having an optical integrator The optical integration forms a pupil intensity distribution on the illumination pupil on the rear side; and any of the i-th to fourth aspects

The correction sheets 70 are disposed in the illumination pupil space including the illumination pupil on the rear side.

A sixth aspect of the present invention provides an illumination optical system that performs light on a surface to be illuminated by light from a light source, wherein the system includes: a distribution forming optical "having an optical integrator, and is later than the optical integrator a pupil intensity division on the side illumination pupil; and any one of the correction means in the fourth to fourth aspects, wherein the alignment includes the illumination aperture space of the rear side of the two illuminations, the optical The integrator has an elongated rectangular unit wavefront distinguishing surface along a fixed direction, and the gauge direction corresponds to an i-th direction in the correcting unit. The seventh aspect of the present invention provides an exposure, the exposure襄 • • 如 • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • An exposure step of exposing to the photosensitive substrate using an exposure apparatus according to a seventh aspect; and a developing step of developing the photosensitive substrate on which the pattern of the above-described pattern is transferred, in the above-mentioned sensory 10 20102285 A cover layer having a shape corresponding to the predetermined pattern described above on the surface of the J2i8upif.doc substrate, and a processing step of reinforcing the surface of the photosensitive substrate via the mask layer. [Effect of the Invention] An illumination optical system according to a first aspect of the present invention includes a correction unit that is disposed in an illumination pupil space including an illumination pupil on a rear side of the optical integrator, and performs a pupil intensity distribution formed on the illumination pupil The correction unit includes a first substrate on which the first extinction pattern is formed, and a second substrate 'the first matte pattern and the second extinction pattern that are disposed on the rear side of the first substrate and have the second extinction pattern formed thereon In addition, the correction unit is configured to change the relative position of the first substrate and the second substrate and the change in the incident angle of the light incident on the second substrate, the first extinction pattern and The extinction rate produced by the second extinction pattern changes. The result 'can be independently used to correct the intensity of the pupil associated with each point on the illuminated surface by the extinction of the correction unit. The cloths are individually adjusted, and the distribution of the pupil intensity associated with each point can be adjusted to a distribution of properties substantially the same as each other. Therefore, for the illumination optical system of the third aspect of the present invention, for example, A male filter, a density filter that adjusts the pupil strength knives at each point on the illuminated surface, and a correction unit that independently adjusts the pupil intensity distributions associated with each point Acting to adjust the pupil intensity distribution at each point on the illuminated surface to be substantially uniform. Further, for the exposure apparatus of the present invention, the pupil intensity distribution at each point on the surface to be illuminated can be used. Adjusted separately 11 201022855 32380pif.doc A uniform illumination optical system . Exposure, and then can be manufactured = = good μ burst under the lighting conditions = illumination mode of the third form includes correction unit, 兮 optical The integrator is configured by a pair of substrates of two illumination pupils on the rear side. On the incident or exit surface of the second substrate of the first substrate, the =2 substrate may be along the * field, for example. The first substrate moves relative to the first direction. The long side of the unit wavefront discrimination surface of the device ... According to the above configuration, the correction unit has a plurality of extinction characteristics, that is, the = surface is illuminated by the irradiation surface, and the wire is changed according to various positions. Therefore, for the third shape of the present invention, the illumination optics can be supplemented by the multi-H light effect of the positive single 兀, and the light is detected by the light of the illuminated surface = The gap is adjusted for the difference in light intensity in the area. Further, in the exposure apparatus of the present invention, the illumination light (four) system can be used, and good exposure can be performed under appropriate illumination conditions, and a good tree can be manufactured, and the illumination optical system pair and the illumination (4) are respectively In the light-degree distribution of _off, the optical axis is adjusted in the direction of the optical axis and in the predetermined direction. To make the above features and advantages of the present invention simpler, the following embodiments are described in detail below with reference to the accompanying drawings. [Embodiment] 201022855 323 «Opif.doc An embodiment of the present invention will be described based on the drawings. Fig. i is a view schematically showing the configuration of a first embodiment of the exposure apparatus of the present invention. In Fig. 1, 'the normal direction of the exposure surface (transfer surface) of the crystal W along the green field of the writing field is set to the Z axis, and the mosquito in the direction parallel to the paper surface of Fig. 1 will be in the exposure surface of the crystal aw. The γ-axis is set to the X-axis in a direction perpendicular to the plane of the paper of FIG. 1 in the light of the wafer w. ❹ Please refer to ® 1, in the first! In the exposure apparatus of the embodiment, the light beam (in a moonlight) is exposed from light. As the light source i, for example, an ArF excimer laser light source that supplies light of a wavelength of 193 nm or a KrF excimer laser light source that supplies light of 2 * 8 gamma = can be used. The light beam emitted from the light source, the diffractive optical system 2, and the diffractive optical element 3 for the ring illumination are incident on the f-free, afGeal lens 4. The shaping optical lens 2 has a substantially parallel beam that converts substantially parallel beams from the source i into a meaningful rectangular cross section and directs the beam to the diffractive optical element 3. The afocal lens 4 is such that the front difficulty position of the no-beam mirror 4 is substantially the same as the position of the diffraction==piece 3, and the rear side focus of the afocal lens 4 is set, and the position of the predetermined surface Ιρ indicated by the middle dotted line is obtained. In a general way, there is no secret of 7 疋 (No Jiao County (4)). The secret optical element = by forming a pitch on the substrate having a wavelength (It is a step of Pitd〇) with the wavelength of the exposure beam (illumination light) (the pitch of the diffractive optical element 3 is diffracted at a desired angle In particular, the diffractive optical element 3 of the ring has the following Wei, when a parallel beam with a shaped profile is incident, in the far field (plus fidd) (or 13 201022855 32380pif.doc

An annular band-shaped light intensity distribution is formed in the Uffg CPmmhofei (diffraction) region. Therefore, the substantially parallel light beams incident on the diffractive optical element 3 form an annular band-shaped light intensity distribution on the pupil plane of the non-finger lens 4, and are then emitted from the afocal lens 4 in an angular distribution of the ring shape. In the optical path between the front lens group 4a and the rear lens group 4b of the afocal lens 4, a density filter is disposed in the vicinity of the pupil position of the afocal lens 4 or the vicinity of the pupil position. 5 and a conical cylindrical mirror (axic〇n) system 6. The density filter 5 has a position of a parallel flat plate, and an indifference pattern containing a (4) optical point such as chromium (ehfGme) or chromium oxide is formed on the surface of the dense film 5. That is, the density calender sheet 5 has a transmittance distribution having a different transmittance depending on the incident position of the light. The specific function of the density calender sheet 5 and the configuration and action of the conical prism mirror system 6 will be described later. The light passing through the afocal lens 4 is via a zoom lens (z〇〇m lens) for making the mouth value (mouth value = reticle side numerical aperture of the illumination optical system / reticle side numerical aperture of the projection optical system) variable 7, and incident on a micr〇fly eye lens (or a compound eye lens) 8 as an optical integrator. The micro fly's eye lens 8 is, for example, an optical element including a plurality of microlenses having a positive refractive power which are arranged vertically and horizontally and densely arranged, and is formed by etching a parallel plane plate to form a minute lens group. Each of the minute lenses constituting the micro fly's eye lens is smaller than the lens parts constituting the fly-eye lens. Further, unlike the fly-eye lens composed of the lens members which are separated from each other, the micro fly's eye lens is not integrally isolated from each other but is formed integrally with each other. However, 14 201022855 3Z380pif.doc Considering that the lens elements having positive refractive power are arranged vertically and horizontally, the micro fly-eye lens is the same wavefront-divided optical integrator as the fly-eye lens. Further, as the micro fly's eye lens 8', for example, a cylindrical micro fly's eye lens can be used. The constitution and function of the columnar micro fly-eye lens are disclosed, for example, in U.S. Patent No. 6,913,373. The position of the predetermined surface IP is disposed in the vicinity of the front focus position of the zoom lens 7 or the front focus position, and the incident surface of the micro fly-eye lens 8 is disposed in the vicinity of the rear focus position of the 0 zoom lens 7 or the rear focus position. In other words, the zoom lens 7 substantially arranges the predetermined surface IP and the incident surface of the micro fly-eye lens 8 in a Fourier transform relationship, and arranges the pupil plane of the afocal lens 4 and the incident surface of the micro fly-eye lens 8 to be substantially optically light. . Therefore, similarly to the pupil plane of the afocal lens 4, a ring-shaped field (illumination field of view) centering on the optical axis AX is formed on the incident surface of the micro-folding lens 8. The overall shape of the annular field is similarly changed depending on the focal length of the zoom lens 7. The incident surface of each of the microlens lenses 8 (that is, the 'unit wavefront split surface) is, for example, a rectangular shape having a long side in the Y direction and a short side along the X direction, and is formed in the light. The shape of the illumination area on the cover (and thus the shape of the exposed area to be formed on the wafer W) is similarly rectangular. The light beam incident on the micro fly's eye lens 8 is two-dimensionally divided, and the position near the rear side focus surface or the rear side focus surface of the micro fly-eye lens .8 (and thus the position of the illumination pupil) is formed and formed The secondary light source of the light intensity distribution of the incident surface of the micro fly-eye lens 8 is substantially the same, that is, the second surface light source formed by the ring-shaped substantial surface light source 15 centering on the optical axis 2010 201022855 32380pif.doc Secondary source (stiff intensity distribution). A correction unit 9 is disposed in the vicinity of the rear focal plane or the rear focal plane of the micro fly-eye lens 8. The configuration and function of the correction unit 9 will be described later. Further, an illumination aperture stop (not shown) is disposed in the vicinity of the rear focal plane or the rear focal plane of the micro fly-eye lens 8, and the illumination aperture stop has a ring-shaped secondary light source. Corresponding ring-shaped opening (light transmitting portion). The illumination aperture stop can be freely inserted into the illumination optical path or freely extracted from the illumination optical path, and the illumination aperture stop can be configured as: a plurality of apertures that are switchable and have openings of different sizes and shapes. Light. As the switching method of the aperture stop diaphragm, for example, a well-known turret method or a slide method or the like can be used. The illumination aperture stop is disposed at a position that is substantially optically conjugate with the entrance pupil plane of the projection optical system PL described below, which contributes to the specification of the range of illumination of the secondary light source. The light passing through the micro fly's eye lens 8 and the correction unit 9 is superimposed to illuminate the mask blind η via the collecting optical system ίο. Thus, a rectangular dome-shaped field corresponding to the shape and focal length of the microlens of the micro fly's eye lens 8 is formed on the mask mask as the illumination field stop. The light passing through the rectangular opening (light transmitting portion) of the mask mask 11 is superposed on the mask having the predetermined pattern through the imaging optical system 12 including the front lens group 12a and the rear lens group 12b. M is illuminated. That is, the imaging optical system 12 forms an image of the rectangular opening portion of the mask mask n on the mask. A pattern to be transferred is formed on the mask μ held on the mask stage MS, and has a rectangular shape with a short side in the direction of the γ direction in the γ direction in the entire pattern region (slit (siit) )) A total of aunts and aunts are illuminated. The light that has penetrated the pattern area of the mask M is held on the wafer platform by projection =f=p:Li (photosensitivity)

The image of the cover n. That is, in the optical correspondence with ^ g θ 光 on the mask m, along the Y region on the wafer W ('effective = two directions: = rectangular static exposure ❹ and cast two 式'荖x W's first axis AX orthogonal plane (XY plane), two steps 2 = direction) to make the mask platform MS and wafer platform (gentle mur scan), and then the mask M and wafer w Synchronous mobile field to expose the S cover to the photographic light field on the crystal 11 W, the photographic area has a length width corresponding to the stationary exposure area / (movement amount) and has Wafer w scan amount

The disc mirror system 6 is composed of the first jaw member 6a 3 and the L member in order from the light source side. 'The first prism member is known as ^:=, and the concave conical refractive surface faces the mask side. The lion-shaped ribs of the J-faces facing the light source side with the convex conical folds abutting each other are at least one of the members that can be along the m and the third member 6a The interval of the second meandering member 6b is variable. Move 17 201022855 32380pif.doc The first 稜鏡 member and the second 稜鏡 member % are twisted together, and the conical cylindrical mirror 6 is parallel flat = a; the second ring-shaped secondary light source is caused by influences. However, when 2a is separated from the second 稜鏡 member ,, the 带-shaped visibility of the annular band (the difference between the outer diameter and the inner diameter of the annular band-shaped secondary light source) is kept constant, and Outer diameter (inside diameter) of the ring-shaped secondary light source

Variety. That is, the annular band-like secondary light source has a ring-to-belt ratio (inner diameter/outer diameter) and a size (outer diameter). The zoom lens 7 has a function of similarly enlarging or reducing the overall shape of the endless belt-shaped secondary light source. For example, the focal length of the zoom lens 7 is enlarged from a minimum value to a predetermined value', whereby the overall shape of the endless belt-shaped secondary light source is similarly enlarged. In other words, by the action of the zoom lens 7, the annular band ratio of the annular secondary light source does not change, and the width of the secondary light source

And the size (outer diameter) changes together. Thus, the ring band ratio and the size (outer diameter) of the endless belt-shaped secondary light source can be controlled by the action of the conical mirror system 6 and the zoom lens 7. In the first embodiment, as described above, the secondary light source formed by the microplastic fly-eye lens 8 is used as a light source, and Kohler illumination is performed on the mask 配置 disposed on the illuminated surface of the illumination optical system (2 to 12) (Kohler) Illumination). Therefore, the formation position of the secondary light source is optically conjugate with the position of the aperture stop AS of the projection multi-optical system PL, and the formation surface of the secondary light source can be referred to as the illumination pupil plane of the illumination optical system (2 to 12). . In the case of the illumination, the illuminated surface (the surface on which the mask is disposed) or the arrangement in which the projection optical system PL is considered as the illumination optical system 18 201022855 jzjeupif.doc has a wafer w The surface becomes an optical Fourier transform surface. Further, the pupil intensity distribution refers to an illumination pupil plane of the illumination optical system (2 to 12) or a light intensity distribution (acceptance distribution) on a plane optically conjugate with the illumination pupil plane. When the number of wavefront divisions generated by the micro fly-eye lens 8 is relatively large, the comprehensive light intensity distribution formed on the incident surface of the micro fly-eye lens 8 and the age distribution of the secondary optical hybrid (the pupil intensity) Knife cloth) shows a correlation with rain. Therefore, the distribution of the light intensity of the human face of the micro-refractive lens 16 lens and the surface of the human lens surface may be referred to as a pupil intensity distribution. In the configuration of FIG. 1, the diffractive optical element 3, the afocal lens 4, the zoom lens 7, and the micro fly's eye lens 8 constitute a distribution forming optical system 'the illumination light of the distribution forming optical system on the rear side of the micro fly-eye lens 8 A pupil intensity distribution is formed on the crucible. Instead of the diffractive optical element 3 for the ring illumination, a diffractive optical element (not shown) for multi-pole illumination (bipolar illumination, quadrupole illumination, octopolar illumination, etc.) can be set in the illumination optical path, whereby Multi-pole illumination is available. A diffractive optical element for multi-pole illumination has a function of forming a multipole (dipole, quadrupole, octapole, etc.) in a far field when a parallel beam having a rectangular cross section is incident. Light intensity distribution. Therefore, the light beam passing through the diffractive optical element for multipolar illumination forms a plurality of predetermined shapes (arc shape, circular shape, etc.) centered on the optical axis 八 on the incident surface of the micro fly's eye lens 8. The multi-polar field of the wilderness. As a result, a multi-pole secondary light source having the same illumination as that formed on the incident surface of the micro fly-eye lens 8 is formed in the vicinity of the rear focal plane or the rear focal plane of the micro fly-eye lens 8. 19 201022855 32380pif,doc Further, in place of the diffractive optical element 3 for ring illumination, a diffractive optical element (not shown) for circular illumination can be set in the illumination optical path, whereby a normal circular shape can be performed. illumination. The diffractive optical element for circular illumination has a function of forming a circular light intensity distribution in the far field when parallel light having a rectangular cross section is incident on the east. Therefore, the light beam passing through the diffractive optical element for circular illumination is formed on the incident surface of the micro fly's eye lens 8, for example, a circular field having a circular axis centered on the optical axis AX. As a result, a secondary circular light source of the same shape as the field formed on the incident surface of the microplastic fly-eye lens 8 is formed in the vicinity of the rear focal plane or the rear focal plane of the micro fly-eye lens 8. Further, instead of the diffractive optical element 3' for the endless belt illumination, a diffractive optical element (not shown) having appropriate characteristics can be set in the illumination light path, whereby various forms of anamorphic illumination can be performed. For example, a well-known turret mode or a sliding mode or the like can be used as the switching mode of the diffractive optical element 3. In the following description, in order to make the effect of the first embodiment easy to understand, the illumination pupil on the rear focus surface or the vicinity of the rear focus surface of the micro-plastic fly-eye lens 8 is formed as shown in FIG. Four arc-shaped ❹ substantial surface light sources (hereinafter, simply referred to as "surface light sources") quadrupole-shaped pupil intensity distributions composed of 2〇a, 2〇b, 2〇c, and 2〇dm ( Secondary light source) 20. Further, the main unit 9 is disposed on the rear side (light side) of the formation surface of the pupil-shaped pupil intensity distribution 20. In the following description, when only the "illumination pupil" is used, it means an illumination pupil in the vicinity of the rear focal plane or the rear focal plane of the micro fly-eye lens 8. Referring to Fig. 2, it is formed in illumination. The pupil's quadrupole intensity is 20 201022855 •5”8Upif.doc Original package: and clip = direction _ septa--for r-to arc-shaped real two = X-direction on the diaphragm The short-side direction of the micro fly-eye lens mirror (the rectangular unit wave slightly penetrates the X direction corresponds to the w-side direction of the wafer), which is: the microscopic fly-eye lens 8 has a small transmissive γ 2 ===r direction) , the γ direction corresponds to = the orthogonal direction of the scan orthogonal to the direction (the side on the wafer w is as shown in FIG. 3 'formed on the wafer % along the Y direction and i long and is mixed with the disk The exposure area ER is a rectangular illumination area (not shown) on the mask, in the manner corresponding to the first exposure field ER. Here, the light of one point that the person shoots into the static is in the illumination pupil. The quadrupole-like cloth formed on the top does not depend on the position of the incident point, but has the same shape as each other. However, the pupil intensity of the quadrupole is formed. The light intensity of each of the cloths is different depending on the position of the incident point, and the four poles formed by the light incident on the ER rod wide point P1 incident in the static exposure region as shown in Fig. 4 When the pupil intensity distribution 21 surface ==, there is a tendency that the light intensity '=21c and 21d spaced apart in the γ direction is smaller than the surface of the surface and the light of 21b spaced apart in the 乂 direction. The intensity is greater. On the other hand, as shown in FIG. 5, the center point ρι in the self-still exposure area ER is incident on the light of the peripheral points P2 and P3 spaced apart in the γ direction by 21 201022855 32380pif.doc. In the case of the quadrupole pupil intensity distribution 22, there is a tendency that the light intensity of the surface light sources 22c and 22d spaced apart in the γ direction is larger than the surface light sources 22a and 22b spaced apart in the X direction. The light intensity is smaller. In general, regardless of the shape of the pupil intensity distribution formed in the illumination pupil, the pupil intensity distribution associated with the center point P1 in the static exposure region ER on the wafer W (incident to The intensity of the pupil formed by the light at the center point P1 on the illumination pupil As shown in Fig. 6(a), the light intensity distribution along the Y direction (scanning orthogonal direction) has a concave curve-like distribution which increases toward the periphery at the center and on the other hand. The light intensity distribution along the Y direction of the pupil intensity distribution associated with the peripheral points P2 and P3 in the still exposure region ER on the wafer is as shown in FIG. 6(b), which has the largest at the center and decreases toward the periphery. Further, the light intensity distribution along the γ direction of the pupil intensity distribution has a tendency to be 'independently incident in the X direction (scanning direction) in the static exposure region ER. The position of the dot changes depending on the position of the incident point 沿着 in the γ direction (scanning orthogonal direction) in the still exposure region ER. Thus, when the pupil intensity distribution (the intensity distribution of the pupils formed on the illumination pupils incident on the illumination pupils) associated with the respective points in the static exposure region ER on the wafer w are substantially non-uniform, respectively, Each line on the crystal 'the line width of the pattern is not uniform, and it is not possible to faithfully transfer the fine pattern of the mask enamel onto the wafer W throughout the entire exposed area. In the first embodiment, as described above, the density filter 5 having the following transmittance distribution is disposed in the vicinity of the pupil 22 201022855 jzj»upif.doc position of the afocal lens 4 or the vicinity of the pupil position. The transmittance in the transmittance distribution differs depending on the incident position of the light. Further, the pupil position of the afocal lens 4 is optically shared with the incident surface of the micro fly's eye lens 8 by the rear lens group 4b of the afocal lens 4 and the zoom lens 7. Therefore, the light intensity distribution formed on the incident surface of the micro fly's eye lens 8 is adjusted (corrected) by the action of the density filter 5, and is also applied to the rear focus φ surface formed on the micro fly's eye lens 8, or The pupil intensity distribution of the illumination pupil in the vicinity of the rear focal plane is adjusted. The German and German filters 5 uniformly adjust the pupil intensity distribution associated with each point in the still exposure region ER on the wafer w, and do not depend on the respective off positions. As a result, by the action of the dense money light #5, for example, the quadrupole pupil intensity distribution 21 associated with the center point P1 can be adjusted to be substantially uniform', and the light intensities of the surface light sources 21a to 21d can be adjusted to each other. In this case, the difference in light intensity between the surface light sources 22a and 22b and the surface light sources 罾22c and 22d of the quadrupole pupil intensity distribution 22 of the peripheral points P2 and P3 is rather large. That is, in order to adjust the pupil intensity distribution associated with each point in the still exposure region ER on the wafer w to be substantially uniform by the action of the density filter 5, it is necessary to pass the density filter 5 Other mechanisms outside, adjust the distribution of the pupil intensity associated with each point to the distribution of the same traits. Specifically, for example, in the pupil intensity distribution 21 associated with the center point ρι and the pupil intensity distribution 22 associated with the peripheral points P2, p3, the light intensity of the surface light sources 21a, 21b and the surface light sources 21c, 21d must be made. Large 23 201022855 32380pif.doc The small relationship and the magnitude relationship of the light intensities of the surface light sources 22a and 22b and the surface light sources 22c and 22d coincide at substantially the same ratio. In the first embodiment, in order to substantially match the properties of the pupil intensity distribution relating to the center point P1 and the properties of the pupil intensity distribution associated with the peripheral points P2 and P3, correction is provided as the adjustment mechanism. The unit 9, the correction unit 9 is adjusted such that in the pupil intensity distribution 22 associated with the peripheral points P2, P3, the light intensity of the surface light sources 22a, 22b is smaller than the light intensity of the surface light sources 22c, 22d. As shown in Figs. 7 and 8, the correction unit 9 includes a pair of light-transmissive substrates 91 and 92 having a predetermined thickness along the optical axis AX (corresponding to the Z direction). Each of the substrates 91 and 92 has, for example, a form of a parallel flat plate formed of an optical material such as quartz or fluorite. The first substrate 91 has, for example, a circular outer shape centering on the optical axis AX. The position of the first substrate 91 is fixed in a posture in which the incident surface 91a is orthogonal to the optical axis AX. The second substrate 92 is disposed on the rear side (the mask side) of the first substrate 91, and has, for example, a circular outer shape centering on the optical axis AX. Further, the second substrate 92 is movable in the optical axis AX direction (Z direction) while maintaining the posture of the incident surface 92a of the second substrate 92 orthogonal to the optical axis AX. The correction unit 9 moves the second substrate 92 in the optical axis AX direction based on the command ' from the drive control system 99. Further, the position of the second substrate 92 may be fixed, and the first substrate 91 may be moved in the optical axis AX direction or both of the substrates 91 and 92 may be moved in the optical axis AX direction. Referring to FIG. 9, on the emitting surface 91b of the substrate 91 and the incident surface 92a of the substrate 92, the same outer surface 24 201022855 wj5upif.doc shape and the same size of the light blocking point 51a are formed in accordance with a predetermined distribution. 51b and light blocking points 52a, 52b. Here, each of the light-blocking points 51 & 51b, 52a, 52b' as a unit elimination body is formed of, for example, chromium or chromium oxide. Further, the light-blocking dots 52a are formed in a one-to-one correspondence with the light-shielding dots 51a, and the light-shielding dots 52b are formed in a one-to-one correspondence with the light-shielding dots 51b. Here, a group of light-shielding dots 51a and a group of light-blocking dots 52a are arranged to act on light from the surface light source 20a, and a group of light-shielding dots 51b and a group of light-shielding dots are arranged to light from the surface light source 2〇b effect. In Fig. 9, in order to clarify the drawings, only a pair of light-shielding dots 51a and 51b formed on the emitting surface 91b of the substrate 91 and a pair of light-shielding dots 52a formed on the incident surface 92a of the substrate 92 are shown. And 52b. Hereinafter, in order to make the explanation easy to understand, each of the light-shielding dots 51a, 51b, 52a, and 52b has a circular outer shape, and the light-shielding points 51a and 52a are overlapped from the optical axis , direction, and are observed from the optical axis ΑΧ direction. The light blocking spots 51b and 52b coincide with each other. In order to make the description easy to understand, the operation of the correction unit 9 will be described focusing only on the pair of light-shielding dots 51a and 51b of the substrate 91 and the pair of light-shielding dots 52a and 52b of the substrate 92. In the reference state (reference position) along the optical axis AX direction of the second substrate 92, light parallel to the optical axis AX is incident on a combined extinction region composed of a combination of circular shading points 51a and 52a. Then, on the surface parallel to the emission surface 92b immediately behind the correction unit 9, as shown on the left side of FIG. 10(a), the region 51aa where the circular shading point 51a is matted, and the circular shading point. The 52a matte regions 52aa coincide with each other. That is, immediately behind the correction unit 9, the circular extinction areas 51aa and 25 201022855 32380pif.doc 52aa form a matte area having an area corresponding to one circular extinction area 51aa. When the light parallel to the optical axis AX is incident on the correction unit 9, even if the second substrate 92 is moved from the reference state to the +Z direction, the interval between the substrate % and the substrate % in the optical axis AX direction is increased, and the light shielding property is further improved. The interval between the point 51 & and the light-shielding point 52a in the optical axis AX direction becomes large, and as shown on the right side of Fig. 1 (a), the extinction areas 51aa and 52aa also remain coincident without change. In the same manner, when the light parallel to the optical axis AX is incident, even if the second substrate 92 moves from the reference state to the -Z direction, the interval between the light-shielding point 51a and the light-shielding point 52a is reduced, and the illustration is omitted. However, the extinction areas 51aa and 52aa will remain coincident without change. In the reference state of the second substrate 92 along the optical axis AX direction, the angle of the light incident on the combined extinction region composed of the combination of the circular light-shielding points 51 & and 52a with respect to the optical axis Αχ For example, monotonically increasing from 0 degrees along the γ ζ plane, immediately behind the correction unit 9, as shown on the left side of FIG. 10(b), the eccentric directions of the extinction regions 51aa and 52 move only by different distances from each other' And the coincident area® of the extinction area 51aa and 52aa is monotonically decreasing. As a result, in the state shown on the left side of FIG. 10(b), the circular extinction areas 51aa and 52aa correspond to the area of the overlapping area, and a matte area having an area in which the area of the extinction area is larger than The area of one circular shaped extinction area 51aa is smaller than the area corresponding to the two circular extinction areas 51aa. When the second substrate 92 is moved in the +z direction from the state shown on the left side of FIG. 1(b), the interval between the light-shielding points 51a and 52a is monotonically increased, and 26 201022855 jz^eupif.doc is as shown in FIG. 10 ( As shown on the right side of b), the overlapping area of the erasing area 51aa and 52aa monotonously decreases, and the area of the extinction area 51 and the matte area formed by 52aa monotonously increases. Further, when the second substrate 92 is moved in the -Z direction from the state shown on the left side of FIG. 10 (8), the interval between the light-shielding points 51a and 52a is monotonously decreased, and although the illustration is omitted, the matte area is 52aa. The overlap area is still monotonously increasing, and the area of the extinction area formed by the matte area 51 and 52 is monotonously decreasing.

In the correction unit 9, when the interval between the substrates 91 and 92 in the optical axis AX direction is fixed, the combined extinction region composed of the circular shading points 51a and 52a exhibits the following extinction effect: As the incident angle of light to the first substrate 91 increases, the extinction ratio increases. By comparing the left side of FIG. 11(a) with the left side of FIG. 11(b), and the right side of FIG. 11(a) and the right side of FIG. 11(b). A comparison 'can explain the above situation. Similarly, when the interval between the substrates 91 and 92 in the optical axis AX direction is fixed, the combined extinction region composed of the circular-shaped light-shielding points 51b and 52b also exhibits the following extinction effect: The incident angle of the first substrate 91 is increased, and the extinction ratio is increased. Further, in the correction unit 9, when the incident angle of light to the first substrate 91 is 0 degrees, that is, when light parallel to the optical axis AX is incident, a combination of circular shading points 51a and 52a is formed. The extinction region exerts a fixed extinction effect, that is, regardless of the change in the interval of the substrates 91 and 92 in the optical axis AX direction, the extinction ratio is constant, and the extinction ratio is relatively small. The above situation can be understood by comparing the graph on the left side of Fig. 11(a) with the graph on the right side of Fig. 11(a). Similarly, when the light parallel to the optical axis AX enters 27 201022855 32380pif.doc, the combined extinction area composed of the circular shading points 51b and 52b is relatively small regardless of the change in the interval between the substrates 91 and 92. The fixed matting effect. Further, in the correction unit 9, when the incident angle of the light to the first substrate 91 is fixed (the incident angle is a predetermined value other than 0 degrees), the combined extinction region composed of the circular shading points 51a and 52a is formed. The matting action is performed such that the interval between the substrates 91 and 92 in the optical axis AX direction increases, and the extinction ratio increases. The above situation can be understood by comparing the graph on the left side of Fig. U (b) with the graph on the right side of Fig. 11 (b). Similarly, in the correction unit 9, when the angle of incidence of the light on the first substrate 91 is fixed, the combined extinction region composed of the circular shading points 51b and 52b also exhibits the following extinction H as the substrate The interval between 91 and 92 in the direction of the optical axis AX becomes large, and the extinction ratio increases.

- In the first embodiment, the first substrate 91 and the second substrate 92 are available.

For the moving...correction unit 9 pairs from four: cloth 2G, the optical axis ax is sandwiched in the X direction (== edge direction) - the opposite side light source: 1 and the direction of the light H side) - the center point 静止ι, θ of the stationary exposure port portion on the opposite front field W, that is, 'the arrival of the element 9 of the mask mask 11 (that is, the incident angle of the material G degree for the correction, the first substrate 91) . In other words, the light from the surface light sources 21a and 21b of the pupil intensity distribution 21 associated with the central point Ρ1 of 28 201022855 32380pif.d〇c is incident on the first substrate 91 at an incident angle of 0 degrees. On the other hand, as shown in FIG. 13, the light reaching the peripheral points P2 and P3 in the still exposure region ER on the wafer w, that is, the peripheral point P2, P3 reaching the opening portion of the mask mask η The light of the light is incident on the correction unit 9 at a relatively large incident angle. In other words, the light from the surface light sources 22a and 22b of the pupil intensity distribution 22 associated with the peripheral points P2 and P3 is incident on the first substrate 91 at a relatively large incident angle ±6». Further, in Fig. 12 and Fig. 13, reference numeral B1 denotes a point along the outermost edge of the surface light source 2a (a) (21a, 22a) along the X direction, and reference numeral B2 denotes a surface light source 20b (21b, 22b). The point along the outermost edge of the direction. In addition, in order to make the description relating to FIGS. 12 and 13 easy to understand, the point of the surface light source 20c (21c, 22〇 along the outermost edge in the z direction (see FIG. 2, etc.) is indicated by reference symbol B3, and The point of the outermost edge along the ζ direction of the surface light source 2 〇d (2ld, 22d) is indicated by reference symbol I (please = Fig. 2, etc.). However, 'from the surface light source plus (7) c, =) The light of the surface light source application (21d, 22d) is not subjected to the correction unit 9, and the intensity of the pupil associated with the center point P1 is reduced by the light intensity of the surface light sources 21a and 21b by the correction unit 9. The light from the surface ^ a d is not subject to _ positive single ^ 9 _ silk, the intensity does not change. As a result, as shown in FIG. 舆, even if the pupil intensity distribution 21 of the middle==off is subjected to the extinction of the correction unit 9, 29 201022855 32380pif.doc is only adjusted to light having substantially the same characteristics as the original distribution 21. The intensity distribution is 2Γ. That is, the pupil intensity distribution 21 adjusted by the correction unit 9 also maintains a property that the light intensity '' of the surface light sources 21c and 21d spaced apart in the Y direction is spaced apart from the surface in the X direction. The light sources 2ia, 21b have a greater light intensity. On the other hand, in the pupil intensity distribution 22 associated with the peripheral points P2, P3, the light from the surface light sources 22a and 22b is subjected to the extinction of the correction unit 9, and the light intensity of the light is largely lowered. Here, the degree of decrease in the intensity of light from the surface light sources 22a and 22b can be adjusted by changing the interval between the substrates 91 and 92 in the correction unit 9. On the other hand, the light from the surface light sources 22c and 22d is not subjected to the extinction action of the correction unit 9 so that the light intensity of these lights does not change. As a result, as shown in Fig. 15, the pupil intensity distribution associated with the peripheral points P2, P3 is adjusted to the pupil intensity distribution 22' of a different property from the original distribution 22 by the extinction action of the correction unit 9. That is, the pupil intensity distribution 22' adjusted by the correction unit 9 is changed to a property that the light intensity '' of the surface light sources 22c, 22d spaced apart by 5% in the γ direction is spaced apart from the 方向 interval in the X direction. The surface lights 22a', 22b' have a higher light intensity. Thus, by correcting the extinction action of the early element 9, the pupil intensity distribution 22 associated with the peripheral points p2, p3 is adjusted to a distribution 22 having substantially the same characteristics as the pupil intensity distribution 2Γ of the center point. Similarly, the pupil intensity distribution ' with respect to each point in the γ direction between the center point P1 and the peripheral points P2 and P3 is further related to each point in the stationary exposure area on the wafer W. The pupil intensity distribution is also adjusted to be approximately the same as the distribution of the 30 201022855 3238Upif.doc pupil intensity distribution 21' with respect to the center point ρι. In other words, by the extinction action of the correction unit 9, the pupil intensity distribution associated with each point in the still exposure region ER on the wafer w is adjusted to be substantially the same as the distribution of the same. When expressed in other ways, the correction unit 9 has an extinction rate characteristic necessary for adjusting the pupil intensity distribution associated with each point to a distribution having substantially the same property. As described above, in the correction unit 9 of the first embodiment, a plurality of circular shading points 51a are formed on the emission surface 91b of the first substrate 91 as a ninth extinction pattern in accordance with a predetermined distribution. 51b. Further, as the second matte pattern, a plurality of circular shading points 52a and 52b are formed on the incident surface of the second substrate 92 so as to correspond to the plurality of light-blocking points 51a and 51b one by one. The circular-shaped light-shielding dots 51a and 52a have the same size as each other. The light-shielding dots 51a and 52a overlap each other as viewed from the optical axis AX direction. Similarly, the circular-shaped light-shielding points 51b and 52b have the same size, and the light-shielding points 51b and 52b overlap each other as viewed from the optical axis Αχ direction. Further, the first substrate 91 and the second substrate 92 are relatively movable in the optical axis direction. Therefore, the combined extinction region composed of the circular-shaped light-shielding dots 51 & and 52a, and the combined extinction region composed of the circular-shaped light-shielding dots 51b and 52b are caused by a so-called parallax effect (p aral j ax effect The extinction effect is exerted as follows: the extinction ratio monotonically increases as the incident angle of the light becomes larger, and the extinction ratio monotonically increases as the interval between the substrates 91 and 92 becomes larger. However, when the incident angle of light is 0 degree, the extinction ratio is fixed and does not depend on the change in the interval between the substrates 91 and 92. 31 201022855 32380pif.doc In this way, the correction unit 9 is configured to change the interval between the first substrate 91 and the second substrate 92 (generally, the change in the relative position) and the light incident on the first substrate 91. The change in the incident angle changes the extinction ratio generated by the first matte patterns (51a, 51b) and the second matte patterns (52a, 52b). Further, the correction unit 9 is disposed at a position near the illumination aperture, that is, at a position on the mask Μ (or the wafer W) as the illuminated surface, which converts the positional information of the light into the angle information of the light. Therefore, by the extinction action of the correction unit 9 of the first embodiment, the pupil intensity distributions associated with the respective points on the illuminated surface can be independently adjusted, and the pupil intensity associated with each point can be adjusted. The distribution is adjusted to a distribution of substantially identical traits to each other. Further, in the illumination optical systems (2 to 12) of the first embodiment, the pupil intensity distributions associated with the respective points can be adjusted to be substantially uniform by the synergistic action of the correction unit 9 and the density filter 5, respectively. The correction unit 9 independently adjusts the pupil intensity distributions associated with the respective points in the still exposure region ER on the wafer w, and the density filter 5 collectively pairs the apertures associated with the respective points. The intensity distribution is adjusted. Therefore, in the exposure apparatus (2 to WS) of the first embodiment, an illumination optical system in which the pupil intensity distribution at each point in the static exposure region ER on the wafer W is adjusted to be substantially uniform can be used ( 2 to 12), good exposure can be performed under appropriate illumination conditions corresponding to the fine pattern of the mask ,, and the desired line width can be faithfully transferred to the entire exposure area by the fine pattern of the mask Μ To the wafer W. In the first embodiment, the operation of adjusting the pupil intensity distribution associated with each point 32 201022855 i238Upif.d〇c in the still exposure region ER is substantially uniform, and further, it will be phased with each point. The action of adjusting the intensity distribution to a desired distribution is performed, for example, based on a measurement result of a pupil intensity distribution measuring device (not shown) that performs projection based on light passing through the projection optical system PL. The optical intensity f distribution on the pupil plane of the optical system pL is measured. For example, the pupil intensity distribution measuring device includes a charge coupled device (CCD) photographing unit having a photographing surface disposed at a position where the optical yoke is formed at a pupil position of the projection optical system pL. The pupil intensity distribution (the pupil intensity distribution formed by the light incident on each point on the pupil plane of the projection optical system PL) on the image plane of the projection optical secret PL is monitored (m0nitor). For details of the configuration and function of the pupil intensity distribution measuring device, reference is made to U.S. Patent Publication No. 2,8/3,7,7, and the like. Specifically, the measurement result of the pupil intensity distribution measuring device is supplied to the f-part (not shown). The control unit outputs a command to the drive control system 99 of the correction unit 9 based on the result of the measurement of the pupil intensity distribution measuring device so that the pupil intensity distribution on the pupil plane of the projection optical system PL becomes a desired distribution. The drive control system 99 controls the Z-direction position of the second substrate 92 based on an instruction from the control unit to adjust the pupil intensity distribution associated with each point in the stationary area ER on the wafer trade to a desired level. In the first embodiment, it is considered that the light amount side of the wafer (irradiated surface) is affected by the matting action of the positive unit 9 (adjustment effect. In this case, a known configuration can be used as needed. 33 201022855 32380pif.doc

The illuminance distribution in the still exposure area ER or the shape of the still exposure area (illumination area) ER is changed by the action of the light amount distribution adjustment unit. Specifically, the light quantity distribution adjustment unit that changes the contrast distribution can be used. The composition and method disclosed in the U.S. Patent Nos. 2001-313,250, the entire disclosures of which are incorporated herein by reference. The light quantity distribution adjustment for changing the shape of the illumination area can be made by using the method disclosed in the pamphlet of the International Patent Publication No. WO2005/048326 (the corresponding publication of the US Patent Publication No. 2/7/14112). Further, in the first embodiment described above, the correction unit 9 is configured by the i-substrate 91 and 92 having a flat plate shape perpendicular to the optical axis 根据 according to the specific embodiment of FIG. A: a circular shape of the light-shielding dots 51a and 51b as a matte pattern is formed on the emission surface of the first substrate 91, and the second base is formed.

== The upper distribution forms the circular obstruction points 52a and 52b as the second extinction pattern. However, the present invention is not limited thereto, and the specific configuration of the correction unit may be various. The substrate can form the form of the substrate of the correction unit 9 (outer shape and the like), the posture of the base, the number of unit extinction regions forming the respective matte patterns, and the position of the formation surface of the f-bit extinction region. Specifically, the substrate 9 of 92 on the upper side can be used as a substrate having at least one of the faces of the surface of the lens. In addition, in the first embodiment, a pair of substrates 91 are provided. The movement is relatively movable in the direction of the X-axis and the X-axis. However, the present invention is not limited thereto, and the correction unit of the first embodiment is configured by a pair of substrates that are relatively rotatable around the wire. In the correction unit of the modification of the first embodiment, the correction unit 9A according to the modification of the first embodiment includes a substrate e 93 and 94 having a predetermined thickness along the optical axis 。. For example, 93 and 94 have a parallel flat plate formed of an optical material such as quartz or fluorite. The first substrate 93 has a circular outer shape shape centered on the optical axis AX, for example, and can be maintained for the first time. The incident surface 93a of the substrate 93 rotates around the optical axis 姿态 in a posture orthogonal to the optical axis AX. The second substrate 94 is disposed on the rear side of the first substrate %, and the second substrate 94 has a circle centered on the optical axis 例如, for example. In addition, the second substrate 94 is configured to be rotatable about the optical axis AX while maintaining the posture of the incident surface 94a of the second substrate 94 orthogonal to the optical axis 。. In the correction unit 9A, the first substrate The substrate 93 and the second substrate 94 are rotated about the optical axis AX based on an instruction from the drive control system 99A. As shown in Fig. (a), the emission surface 93b of the substrate 93 is formed along the optical axis AX. A plurality of light-shielding linear regions 53a and a plurality of light-shielding linear regions 53b arranged in a circular circumferential direction. Further, as shown in FIG. 17(b), an edge is formed on the incident surface 94a of the substrate 94. A plurality of light-shielding linear regions 54a and a plurality of light-shielding linear regions 54b arranged in a circumferential direction of a circle centered on the optical axis AX. Further, in FIG. 17 35 201022855 32380pif.doc (a) In order to make the explanation easy to understand, it is shown from the side of the incident surface 93a of the substrate 93 toward the optical axis AX. In the case of the incident surface 93b, the linear regions 53a, 53b, 54a, 54b as the unit extinction region are formed, for example, of chromium or chromium oxide, and the linear regions 54a are associated with the linear regions 53a one by one. The distribution is formed, and the linear regions 54b are distributed one by one in a manner corresponding to the linear regions 53b. Hereinafter, in order to make the explanation easy to understand, the linear regions 53a, 53b, 54a, 54b have the same shape and size, along The circumference of the circle centered on the optical axis 而 is arranged at equal angles, and is radially extended from the optical axis. Further, at the reference rotational position of the first substrate 93, a group of linear regions 53a are located within an angular range of 9 degrees between the +Χ axis and the +γ axis, and a group of linear regions 53b are located at the -X axis and the -γ axis. The range of angles between. On the other hand, at the reference rotational position of the second substrate 94, a group of linear regions 54a are located within an angular range between the +X axis and the -Y axis, and a group of linear regions 54b are located between the -X axis and the +Y axis. Within the range of angles. In the reference state (reference rotational position) of the substrates 93 and 94, as viewed in the direction of the optical axis AX, as shown in Fig. 18, a group of linear regions 53a, 53b, 54a, 54b do not coincide with each other but along the circumference. The directions are spaced apart. Therefore, the light from the surface light sources 20a to 20d does not depend on the incident angle toward the correction unit 9A (and further on the substrate 93), but is uniformly subjected to the extinction by the linear regions 53a, 53b, 54a, 54b. In other words, in the reference state of the substrates 93 and 94, the so-called parallax effect is not exerted, and the matting action of the linear regions 53a, 53b, 54a, 54b is fixed. When the substrate 93 is rotated from the reference state of FIG. 18, the predetermined angle is rotated along the counter 36 201022855 32380 pif.doc in the figure μ, and the substrate 94 is rotated from the reference state of FIG. 18 along the clockwise direction in FIG. When the direction is rotated by a predetermined angle, a state can be obtained in which, as indicated by a thick line in FIG. 19, for example, when viewed from the optical axis gossip direction, the three linear regions 53a and the three linear regions 54a coincide with each other. And when viewed from the optical axis AX direction, the three linear regions 53b and the three linear regions 54b coincide with each other. In the state shown in Fig. 19, the combined extinction regions 55a, ❺ composed of three linear regions 53a and 54a overlapping each other, and the combined extinction region 55b composed of three linear regions 53b and 54b overlapping each other By the so-called parallax effect, an extinction effect that monotonically increases the extinction ratio as the incident angle of light becomes larger is exerted. Here, three combined extinction regions 55a composed of linear regions 53a and 54a act on the light from the surface light source 20a, and three combined extinction regions 55b composed of the linear regions 53b and 54b are from the surface light source 20b. The light works. Further, when the substrate 93 is rotated from the state shown in FIG. 19 by a predetermined angle in the counterclockwise direction in FIG. 18, and the substrate 94 is brought from the state shown in FIG. 19, it is clockwise in FIG. Only by rotating the predetermined angle, ❹ can obtain a state in which, as shown by a thick line in FIG. 20, for example, when viewed from the optical axis AX direction, the five linear regions 53a and the five linear regions 54a coincide with each other. And, when viewed from the optical axis ΑΧ direction, the five linear regions 53b and the five linear regions 54b coincide with each other. That is, the overlapping regions 55a and 55b in which the linear regions 53a, 53b, 54a, and 54b are overlapped when viewed from the optical axis 进一步 direction are further increased than the state shown in FIG. 19, in the state shown in FIG. Five combined extinction regions 55a composed of linear regions 53a and 54a, and five combined regions composed of linear regions 53b and 54b are used to make the extinction ratio with the incident angle of light. Larger and monotonically increasing extinction. In the correction unit 9A, the first matte pattern (53a, 53b) and the first matte pattern are observed from the change in the relative rotational position of the first substrate 93 and the second substrate 94 around the optical axis AX. The size of the overlapping regions 55a and 55b in which the two matte patterns (54a, 54b) are superposed changes. The correction unit 9A performs a matting action in which the overlapping area 55a of the first matte patterns (53a, 53b) and the second extinction patterns (54a, 54b) is fixed when the incident angle of the light to the first substrate 93 is fixed. ❿ 55b becomes larger and the extinction rate increases. In other words, in the correction unit 9A, the i-th extinction pattern is changed by the change in the relative position of the first substrate 93 and the second substrate 94 around the optical axis AX and the incident angle of the light incident on the first substrate 93. The extinction ratios generated by (53a, 53b) and the second extinction patterns (54a, 54b) change. Therefore, similarly to the case of the first embodiment described above, the light associated with each point in the still exposure region ER on the wafer W can be independently independently caused by the matting action of the correction unit 9A of the modification of Fig. 16 . The 瞳 intensity distribution ❹ is adjusted separately', and the pupil intensity distribution associated with each point can be adjusted to have a distribution of substantially the same nature. Furthermore, in the modification of FIG. 16, the two substrates of the substrates 93 and 94 are rotated about the optical axis AX. However, the present invention is not limited thereto, and at least one of the substrates 93 and 94 may be surrounded by the optical axis. AX is rotated to form a correction unit. Further, in the modification of Fig. 16, a pair of substrates 93 having a parallel plane 38 201022855 3238Upif.doc plate arranged perpendicular to the optical axis 根据 are arranged according to the specific form shown in Figs. 16 and 17 and 94 is not limited to two:: single, the specific composition can be for each: state however

For all kinds of townships. In other words, the substrate 93, 94' can be used, for example, at least one of them. In the modification of Fig. 16, the pair of substrates 93 and 94 are relatively rotated. However, it is not limited to this, and the substrate can be relatively moved by the square of the optical axis AX (typically, in any direction along the XY plane orthogonal to the optical axis AX). , = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = In this case, it is important that 'the 帛1 extinction pattern and the second _ overlap field are observed from the optical axis when the relative position of the substrate and the first plate in the direction transverse to the optical axis is changed. The size of the ^ field changes. Further, in the first embodiment and the modification of the first embodiment, the pupil intensity distribution 20 formed on the illumination pupil near the rear focal plane or the rear focal plane of the micro fly-eye lens 8 is obtained. The correction unit 9 is disposed on the rear side (the mask side) of the formation surface (9A>. However, the present invention is not limited thereto, and the correction unit 9 (9A) may be disposed on the formation surface of the pupil intensity distribution 2〇. The position, or the front side (light source side) of the forming surface, or 39 201022855 32380pif.doc, the correction unit 9 (9A) is disposed at a position of the other illumination pupil on the rear side of the micro fly-eye lens 8 or the illumination In the vicinity of the aperture, for example, the position of the illumination pupil disposed between the front lens group 12a and the rear lens group 12b of the imaging optical system 12 or the vicinity of the illumination pupil. Generally, the pair is formed in the illumination light. The correction unit according to the first aspect of the present invention for correcting the pupil intensity distribution includes: a translucent first substrate, and an optical element having a power adjacent to the front side of the illumination pupil and adjacent to The back side of the illumination diaphragm has In the illumination pupil space between the optical elements, the translucent i-th substrate has a predetermined thickness along the optical axis 10, and the translucent second substrate is disposed in the illumination pupil space. a position closer to the rear side than the first substrate, and the translucent second substrate has a predetermined thickness along the optical axis. The first matte pattern is formed on the first substrate, and the second substrate is formed on the second substrate. The second extinction pattern corresponding to the matte pattern, the relative position of the second matte pattern and the second matte pattern can be changed. That is, at least one of the 帛i substrate and the second substrate can be moved in a predetermined direction, or Rotating around a predetermined axis. Further, in the "illumination pupil space", there may be a parallel plane plate or a plane mirror having no magnification ❹. Further, in the first embodiment and the modification of the first embodiment, The unit extinction region forming the matte pattern of the substrate is formed as a light-shielding region that blocks the incident light by a light-shielding point formed by, for example, chromium or chromium oxide. However, 'not limited to this' unit extinction region It may be a form other than the form of the light-shielding region. For example, at least - (four) light of the plurality of matte pattern towels may be formed as a scattering region for the human ray, 40 201022855 JZJ8upif.doc or formed to be incident A diffraction region of light diffraction. Generally, a scattering region is formed by performing roughening processing on a desired region of a light-transmitting substrate, and a diffraction region is formed by performing a diffraction surface forming process on the intended region. FIG. 21 is a view schematically showing a configuration of an exposure apparatus according to a second embodiment of the present invention. In FIG. 21, 'the normal direction of the exposure surface (transfer surface) of the wafer W which is a photosensitive substrate is set as The z-axis is set to a γ-axis in a direction parallel to the paper surface of FIG. 21 in the exposure surface of the wafer W, and is set to an X-axis in a direction perpendicular to the paper surface of FIG. 21 in the exposure surface of the wafer W. The second embodiment has a configuration similar to that of the first embodiment, but in particular, the configuration of the correction unit 19 is different from that of the first embodiment. More specifically, in the first embodiment, the density filter 5 and the conical prism mirror system 6 are disposed in the vicinity of the pupil position of the afocal lens 4 or the pupil position, but in the second embodiment, Since the density filter 5 is not provided, the density filter 5 is not provided, and a conical cylindrical mirror system can be provided as needed. However, in the second embodiment, the arrangement of the conical prism system is omitted. In Fig. 21, components having the same functions as those of the first embodiment of Fig. 1 are denoted by the same reference numerals as those in Fig. 1. In the following description, the configuration and operation of the second embodiment will be described with a focus on differences from the first embodiment, and the description overlapping with the first embodiment will be omitted. In the exposure apparatus of the second embodiment, the light emitted from the light source 1 is incident on the afocal lens 4 via the shaping optical system 2 and the diffractive optical element 3 for ring illumination. The light that has passed through the afocal lens 4 is incident on the micro fly's eye lens 8 via the predetermined surface ip and the zoom lens 7. The light beam incident on the micro fly's eye lens 8 is two-dimensionally divided on the rear side focal plane of the micro fly-eye lens 8 or 41 201022855 32380pif.doc. The rear side focus surface is close to _, bright light, and shaped like a strip A secondary light source composed of a substantial surface light source (optical smear) A correction single illusion 9 is disposed in the vicinity of the rear focal plane of the micro fly's eye lens 8 or the rear focal plane. The composition of the correction unit 19 And the role will be described later.

The light passing through the micro fly's eye lens 8 and the correction unit D is superimposed and illuminated by the concentrating optical system ίο, the mask mask η, and the imaging optical system 12. Light passing through the mask case region forms an image of the reticle pattern on the wafer W via the projection optical system PL. In this manner, according to the step-and-scan method, the mask M is moved (scanned) in synchronization with the wafer w in the X direction (scanning direction), thereby scanning and exposing the mask pattern to the photographing area of the wafer W (exposure area) ).

In the following description, in order to make the effect of the second embodiment easy to understand, a quadrupole as shown in FIG. 22 is formed on the illumination pupil in the vicinity of the rear focal plane or the rear focal plane of the micro fly-eye lens 8. A pupil intensity distribution (secondary light source) 30. The correction unit 19 is disposed directly behind the formation surface of the quadrupole aperture intensity distribution 30. In the following description, when only the "illumination pupil" is involved, "the illumination pupil" refers to the illumination pupil of the rear focus surface of the micro fly's eye lens 8 or the vicinity of the rear focus surface.

Referring to FIG. 22, the quadrupole pupil intensity distribution 30 formed in the illumination pupil includes a pair of arc-shaped substantial surface light sources 30a and 30b that are spaced apart in the X direction by the optical axis AX. And a pair of arc-shaped substantial surface light sources (hereinafter referred to as "surface light sources") 30c and 30d which are spaced apart in the Z direction by the optical axis AX. Furthermore, X 42 201022855 32380pif.doc 3 on the illumination pupil is the short-side direction of the short-side soap position of the rectangular micro lens of the St lens 8, and the scanning direction of the circle W: (10) The two directions correspond to the direction orthogonal to the scanning of the parent to the scanning direction of the wafer W (the γ direction on the wafer W) in the longitudinal direction of the minute lens of the crucible (that is, the unit wavefront portion). Figure 3 as referred to in the description of the first embodiment

A stationary exposure region ER having a long side in the γ direction and having a rectangular shape along the X direction is formed, and the stationary exposure region MM is read to form a rectangular illumination region on the mask M (not shown). Here, the intensity of the quadrupole pupil intensity distribution formed at one point in the static exposure area £11 has substantially the same shape as each other and does not depend on the position 1 of the human shot point. The light intensity of each of the surface light sources constituting the quadrupole slit distribution may vary depending on the position of the incident point. As a relatively simple example, a case is considered in which the light incident on the peripheral points p2 and p3 in the still exposure region ER on the illumination pupil forms the quadrupole schematically shown in FIGS. 23 and 24, respectively. The intensity distribution of the pupil. That is, as in @23*, in the quadrupole pupil intensity distribution 32 formed by the light from the center point P1 in the still exposure region ER to the peripheral point Ρ2 spaced apart in the +γ direction, the surface The light intensities of the light sources 32a, 32b, and 32d are substantially equal to each other, and the surface light source 3 has a light intensity greater than that of the other surface light sources. Further, as shown in FIG. 24, a quadrupole pupil intensity distribution formed by light incident from a center point 43 201022855 32380pif.doc P1 in the still exposure region ER to a peripheral point P3 spaced apart in the -Y direction In 33, the light intensities of the surface light sources 33a, 33b, and 33c are substantially equal to each other, and the light intensity of the surface light source 33d is larger than the light intensity of the other surface light sources. Thus, when the pupil intensity distribution associated with each point of the wafer Wj1 is 'clamped with the optical axis AX and separated in the z direction (the direction corresponding to the scanning orthogonal direction (the Y direction on the wafer W)) When the difference in light intensity between the pair of regions is too large, there is a pattern deviation from exposure to the image capturing region (in the case of the example shown in FIGS. 23 and 24, which is a position corresponding to the peripheral points p2 and p3) The problem with the expected location. In the second implementation, the viewing unit 19 is provided as an adjustment mechanism for adjusting the difference in light intensity, and the difference in light intensity means the pupil intensity distribution 32, % associated with the peripheral points P2 and P3. The difference in light intensity between the pair of surface light sources 32c and 32d spaced apart in the Z direction and the opposite light sources 33c and 33d is sandwiched by the optical axis AX. As shown in FIG. 25 and FIG. 26, the correction unit 19 includes three light-transmissive substrates 191, 192, and 193 having a regular thickness along the optical axis (corresponding to the γ direction). Each of the substrates 191 to 193 has, for example, quartz or fluorite-like optics. The first substrate 191 has a circular outer shape shape centering on the optical axis ', for example, in a posture in which the incident surface 19la of the first substrate 191 and the optical axis Αχ are orthogonal to each other. The position of the first substrate 191 is positioned. The second substrate 192 is disposed on the rear side of the first substrate 191 and has an outer shape corresponding to a region through which the light from the surface light source 3 passes, for example, a shape having a fan shape. Shape. Further, the second substrate 192 is configured to be one-dimensional The second substrate 44 is placed on the first substrate 191 in the direction B (the longitudinal direction of the unit wavefront dividing surface) while the incident surface 192a of the second substrate 44 is perpendicular to the optical axis 192. The rear side has an outer shape corresponding to a region through which the light from the surface light source 30d passes, for example, an outer shape having a fan shape. Further, the third substrate 193 is configured to maintain the incident surface of the third substrate 193. 193a moves in the Z direction while being orthogonal to the optical axis AX. Hereinafter, in order to simplify the description, the second substrate 192 and the third substrate 193 have a symmetrical structure with respect to the χγ plane passing through the optical axis AX. The incident surface 192a of the second substrate 192 and the incident surface 193a of the third substrate 193 are located on the same surface. In the correction unit 19, the second substrate 192 and the third substrate 193 are respectively in the Z direction based on an instruction from the drive control system 194. Referring to Fig. 27, on the emission surface 191b of the substrate 191, the incident surface 192a of the substrate 192, and the incident surface 193ab of the substrate 193, 'the same outer shape and the same size are formed in accordance with a predetermined distribution. The light-shielding dots 151, 152, and 153. Here, each of the light-shielding dots 151 to 153 as the unit extinction region is formed of, for example, chromium or chromium oxide, and the light-shielding dots 151 are the light-shielding dots 152 and 153. Distributed in a one-to-one manner, where a group of opaque points 151 are arranged to act on light from surface sources 30c and 30d, a group of opaque points 152 are configured to act on light from surface source 30c, a group The light blocking point 153 is configured to act on light from the surface light source 30d. In Fig. 27, 'a pair of light-shielding dots 151 formed on the emitting surface i91b of the substrate 191 and one light-shielding point formed on the incident surface 192a of the substrate 192 45 201022855 32380pif.doc are shown in order to clarify the drawing. 152 and a light blocking point 153 formed on the incident surface 193a of the substrate 193. In the following, in order to make the description easy to understand, the respective light-shielding points 151 to 153 have a circular outer shape, and the light-shielding points 151 and 152 are viewed from the optical axis 于 direction in the reference state (reference position) of the second substrate 192. Coincide with each other. In the reference state of the third substrate 193, the light-shielding dots 51 and 153 overlap each other when viewed from the optical axis AX direction. Further, in order to make the description easy to understand, attention is paid only to the pair of light-shielding dots 151 of the substrate 191, one light-shielding dot 152 of the substrate 192, and one light-shielding dot 153 of the substrate 193 to explain the action of the correction unit 19. In the reference state of the second substrate 192, when the light parallel to the optical axis 入射 is incident on the combined extinction region ′ formed by the combination of the circular opaque dots 151 and 152, the correction is directly behind the correction unit 19 As shown in FIG. 28(a), the surface of the emission surface 192b overlaps the region 151a which is opaque by the circular opaque point 151 and the region 152a which is opaque with the circular opaque point 152. That is, the circular matte regions 151a and 152a form a matte region having an area corresponding to one circular extinction region 151a directly behind the correction unit 19. In the reference state of the second substrate 192, when incident on the angle formed by the light in the combined extinction region composed of the circular shading points 151 and 152 with respect to the optical axis AX, for example, along the ¥2 plane The twist is monotonically increasing, and immediately behind the correction unit 19, as shown in Fig. 28(b), the matte regions 151a and 152a move only in different distances from each other in the Z direction, and the overlapping regions of the matte regions 151a and 152a monotonously decrease. As a result, in the state of FIG. 46 201022855 32380pif.doc (b), the circular-shaped extinction regions 151 & 152a correspond to the area of the coincident region to form a matte region having an area larger than that of the matte region A circular shaped matte region 151a corresponds to an area 'and is smaller than an area corresponding to the two circular matte regions 151a. > In the reference state of the second substrate 192, the combined matte region composed of the circular light-shielding dots 151 and 152 exhibits a matting action in which the incident angle of the light with respect to the second substrate 191 is changed. Large, the rate of elimination of light increases. Similarly, in the reference state of the third substrate 193, the combined extinction region composed of the circular shading points 151 and 153 functions as

The lower extinction action is that the extinction ratio increases as the light enters the second substrate 191. X Next, when the incident angle of light to the first substrate 191 is fixed, for example, when the incident angle of light is 〇 (when the angle of incident light with respect to the optical axis 〇 is 〇), the second substrate 192 is considered. The case of moving in the ζ direction from the reference state. As described above, when the second substrate 192 is in the reference Lu state, the region i51a where the circular shading point 151 is extinguished immediately after the correction unit I9 and the region 152a where the circular shading point 152 is extinguished are mutually coincide. That is, as shown in Fig. 28 (a), immediately after the correction unit 19, the circular matte regions 151 & 152a form a matte region 'having an area corresponding to one circular extinction region 丨 51 & On the other hand, when the second substrate 192 monotonously moves in the B direction from the reference state, the extinction region 152 £1 moves in the z direction immediately behind the correction unit 19, and the region overlapping the extinction region 151a monotonously decreases. That is, as shown in FIG. 28(b), immediately after the correction unit 19, the circle 47 201022855 32380pif.doc-like extinction regions 151a and 152a correspond to the area of the overlap region to form a matte region having the following area. The area of the matte region is larger than the area corresponding to one circular extinction region 151a, and smaller than the area corresponding to the two circular extinction regions 151a. As described above, when the incident angle of the light to the first substrate 191 is 〇, generally, when the incident angle of light is fixed, the combined extinction region composed of the circular shading points 151 and 152 exhibits the following extinction. The effect is that the amount of movement in the z direction increases from the reference state of the second substrate 192, and the extinction ratio increases. Similarly, when the incident angle of the light to the second substrate 191 is fixed, the combined extinction region composed of the circular shading points 151 and 153 exhibits a matting effect as follows: that is, from the reference of the third substrate 193 The amount of movement in the Z direction from the state becomes larger, and the extinction ratio increases. In the second embodiment, when viewed from the optical axis AX direction, the light-shielding point is observed when the light-shielding point 151 and 152, which are unit-shaped light-receiving regions, are overlapped with each other as a center. The first substrate 191 and the second substrate 192 are relatively movable within a range in which a part of the light-shielding dots 152 overlap. Similarly, when viewed from the optical axis AX direction, the reference light of the circular light-shielding points 151 and 153 which are the unit extinction regions, and the 153 overlap with each other, and a part of the light-shielding point 151 when viewed from the optical axis 与 direction The first substrate 191 and the third substrate 193 are relatively movable within a range in which a part of the light-shielding point I" overlaps. Further, as shown in FIG. 25, the correction unit 19 is in accordance with the intensity of the quadrupole light 201022855 32380pif.doc For example, the light of the pair of surface light sources 30c and 30d spaced apart in the z direction acts in the middle of the cloth, but the correction unit 19 does not separate from the current axis AX. The light of the pair of surface precursors 30a and 30b spaced apart is activated. Further, as shown in Fig. 29, the light reaching the center point P1 in the static exposure area ER on the wafer w, that is, reaching the mask mask The light at the center point P1' of the opening portion of the opening is incident on the correction unit ❹ 19 (that is, on the first substrate 191) at an incident angle of the 。 degree. In other words, from the pupil intensity distribution 31 associated with the center point pi. The light of the surface light source 31c is entered with a twist The light is incident on the first substrate 191 and the second substrate 192 at an angle, and the light from the surface light source 31d is incident on the second substrate 191 and the third substrate 193 at an incident angle of the twist. Further, the pupil intensity distribution is omitted. 31, the surface light sources 31a to 31d are formed in the same manner as the surface light sources 32a to 32d (33a to 33d) of the pupil intensity distribution 32 (33). On the other hand, as shown in FIG. The light at the peripheral points P2 and P3 in the static exposure region ER on the wafer w, that is, the light reaching the peripheral points P2', P3' of the opening portion of the mask mask β 11 is a relatively large incident angle soil. Then, the correction unit 19 is incident. In other words, the light from the surface light sources 32c and 33c of the pupil intensity distributions 32 and 33 associated with the peripheral points P2 and P3 is incident on the first substrate 191 at a relatively large incident angle ±0. And the second substrate 192. The light from the surface light sources 32d and 33d is incident on the first substrate 191 and the third substrate 193 at a relatively large incident angle ±6». Further, in Figs. 29 and 30, Reference point B3 denotes the point of the outermost edge of the surface light source 30c (31c to 33c) along the Z direction (see 49 2010228). 55 32380pif.doc, as shown in FIG. 22 and the like, the point of the outermost edge along the Z direction of the surface light source 30d (31d to 33d) is indicated by reference numeral B4 (please refer to FIG. 22 and the like). The description relating to Fig. 30 is easily understood, the reference symbol B1 indicates the point of the outermost edge of the surface light source 30a (31a to 33a) along the X direction, and the reference symbol B2 indicates the direction of the surface light source 30b (31b to 33b) along the X direction. The outermost point. However, as described above, the light from the surface light sources 30a (31a to 33a) and the surface light sources 30b (31b to 33b) is not affected by the correction unit 19. Fig. 31, Fig. 33, and Fig. 34 are views for explaining the relationship between the relative positions of the second substrate and the third substrate with respect to the first substrate and the matting action of the correction unit. In Fig. 31, the second substrate 192 is in the reference state, and when viewed from the optical axis AX direction, the light-shielding point 151 of the first substrate 191 and the light-shielding point 152 of the second substrate 192 overlap each other. On the other hand, the third substrate 193 is moved by a predetermined distance from the reference state in the +z direction, and a part of the light-shielding point 151 of the i-th substrate 191 and the second substrate 192 are observed from the optical axis AX direction. A part of the light-shielding dots 152 coincide. The center point ρι in the static exposure area ER on the wafer W, that is, the light reaching the center point ρι of the opening of the mask mask n, is at an incident angle of 0 degrees for the ith substrate 191 incident. Therefore, when the light self-surface light source 30c reaches the center point pr via the i-th substrate 191 and the second substrate 192, the amount of light blocked by the combined extinction region of the light-shielding points 151 and 152 is the smallest. When the light self-surface light source reaches the center point ρι via the i-th substrate 191 and the third substrate 193, the amount of light blocked by the combined extinction area of the light-shielding property 50 201022855 32380pif.doc points 151 and 153 is compared. Big. The light reaching the peripheral points P2 and P3 in the still exposure region ER on the wafer W reaches the peripheral point p2 of the opening of the mask mask u, and the light of P31 is a relatively large incident angle θ. On the other hand, the first substrate 191 is incident. Hereinafter, in order to simplify the description, the peripheral point p2' corresponding to the peripheral point P2 in the still exposure region ER is located on the +Z direction side of the opening portion of the mask mask η, and the peripheral point p3 in the still exposure region ER. The peripheral point P3' corresponding to ❹ is located on the -Z direction side. Therefore, when the light self-surface light source 3〇c reaches the peripheral points P2 and p3 via the first substrate 191 and the second substrate 192, the amount of light blocked by the combined light-blocking regions of the light-shielding points 151 and 152 is blocked. bigger. When the light is transmitted from the surface light source 3 (the first substrate 191 and the third substrate 193 to the peripheral point '2'), the amount of light blocked by the combined light-shielding regions of the light-shielding points 151 and 153 is relatively small. When the surface light source 3 (1) reaches the peripheral point Ρ3 through the first substrate 191 and the third substrate 193, the amount of light blocked by the combined extinction region of the light-shielding points 151__ and 153 is the largest. As shown in the center of Fig. 32, among the quadrupole pupil intensity distributions associated with the center point P1, the correction unit 19 has the smallest extinction effect on the surface light source 31c on the +z direction side, and the correction unit 19 is on the side of the ζ direction. The surface light source 31d has a relatively large extinction effect. In this portion of FIG. 32 and related FIGS. 33 and 34, the z-direction of the hatching region extending in the X direction is elongated. The width dimension is used to schematically indicate the magnitude of the extinction action of the correction unit 19. Further, as shown on the left side of FIG. 32, among the pupil intensity distributions of the quadrupole 51 201022855 32380 pif.doc associated with the peripheral point P2, The cancellation unit 19 generates a cancellation for the surface light source 32c The light effect is relatively large, and the extinction unit 19 has a relatively small extinction effect on the surface light source 32d. Further, as shown on the right side of FIG. 32, among the quadrupole pupil intensity distributions associated with the peripheral point p3, the correction unit 19 The extinction effect generated by the surface light source 33c is relatively large, and the extinction unit 19 has the largest extinction effect on the surface light source 33d. Further, as shown in FIG. 33, the second substrate 192 is moved by a predetermined distance from the reference state toward the _z direction. In the state in which the third substrate 193 has moved by a predetermined distance in the +Z direction from the reference state, the extinction unit 19 generates the extinction of the surface light source 31c among the quadrupole pupil intensity distributions related to the center point P1. The function and the extinction function of the correction unit 19 for the surface light source 314 are relatively large. Among the quadrupole pupil intensity distributions associated with the peripheral point P2, the correction unit 19 has the largest extinction effect on the surface light source 32C, and the correction unit The extinction effect generated by the surface light source 32d is relatively small. Among the quadrupole pupil intensity distributions associated with the peripheral point P3, the correction unit 19 generates a cancellation for the surface light source 33c. The effect of the correction unit 19 is the largest for the surface light source 33d. As shown in Fig. 34, the second substrate 192 is moved by a predetermined distance from the reference state in the +Z direction, and the third substrate 193 is self-contained. In the state in which the reference state is shifted by only a predetermined distance in the -Z direction, the extinction unit 19 performs the matting action on the surface light source 31c and the correction unit 19 in the quadrupole pupil intensity distribution associated with the center point ρι. The surface light source 31 (1) has a relatively large extinction effect. Among the quadrupole pupil intensity distributions associated with the peripheral point p2, the correction unit 19 produces a small amount of light for the surface light source 32c. 201032855 32380pif.doc light effect is relatively small' The correction unit 19 produces a cancellation for the surface light source: the maximum 消 在 与 与 与 与 与 四 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 19 The extinction effect produced by 33d is relatively small. Thus, for example, the second substrate can be removed from the second position along the z direction, and the third substrate 193 can be set to be in the z direction, thereby causing the loss of the optical axis AX and the Z. The difference in the degree of the filaments shown in Figs. 23 and 24 existing between the partitions β, Dong, and the surface light sources S2c and 32d and between the pair of surface light sources is adjusted. Specifically, the second substrate 192 of the correction unit 19 is located at a position that moves only by a required distance in the -z direction from the reference state, and the third substrate 193 is moved only in the +z direction from the reference state. When the position of the distance is required, as shown in FIG. 35, among the pupil intensity distribution % associated with the peripheral point p2, the light from the surface light sources 32a and 32b is not subjected to the extinction of the correction unit 19, and therefore, the light of the light The intensity does not change. The light from the surface light source 32c is subjected to the extinction of the correcting unit 19, and the light intensity of the light is largely reduced. Even if the light from the surface light source 32d is subjected to the extinction of the correction unit 19, the degree of reduction in the light intensity of the light is relatively small. As a result, in the pupil intensity distribution 32 associated with the peripheral point P2 adjusted by the correction unit 19, the light intensity of the surface light source 32c' spaced apart in the Z direction is substantially equal to the light intensity of the surface light source 32d'. Alternatively, the difference between the light intensity of the surface light source 32c' and the light intensity of the surface light source 32d· is adjusted to a desired light intensity difference. Further, as shown in Fig. 36, among the pupil intensity distributions 33 associated with the peripheral point P3, the light from the surface light sources 33a and 33b is not subjected to the extinction of the correction unit 53 201022855 32380pif.doc 19, and therefore, the light The light intensity does not change. Even if the light from the surface light source 33c is subjected to the extinction action of the correction unit 19, the degree of reduction in the light intensity of the light is relatively small. The light from the surface light source 33d is subjected to the extinction action of the correction unit 19, and the light intensity of the light is largely lowered. As a result, the light source intensity of the surface light source 33c spaced apart in the Z direction from the pupil intensity distribution 33' associated with the peripheral point p3 adjusted by the correction unit 19 is substantially equal to the light intensity of the surface light source 33d'. Alternatively, the difference between the light intensity of the surface light source 33c1 and the light intensity of the surface light source 33d is adjusted to a desired light intensity difference. Further, the operation of adjusting the difference between the light intensity of the surface light source 32c' and the light intensity of the surface light source 32d' and the light intensity of the surface light source 33c' and the light intensity of the surface light source 33d to a desired light intensity difference For example, based on the measurement result of the pupil intensity distribution measuring device (not shown), the pupil intensity distribution measuring device is based on the light passing through the projection optical system PL on the pupil plane of the projection optical system PL. The 瞳 intensity distribution is measured. Specifically, the measurement result of the pupil intensity distribution measuring device is supplied to the control unit (Fig. The control unit outputs a command to the drive control system 194 of the correction unit 19 based on the measurement result of the pupil intensity distribution measuring device so that the pupil intensity distribution on the pupil plane of the projection light © learning system PL becomes a desired distribution. The drive control system 194 controls the position of the second substrate 192 and the third substrate 193 in the ❺z direction based on an instruction from the control unit, and the difference between the light intensity of the surface light source 32c and the surface light source 32d, and the surface light source. The difference between the light intensity and the light intensity of the surface light source 33d is adjusted to the desired light intensity difference. As described above, in the correction unit 19 of the second embodiment, the light-shielding points 152 and 153 are formed on the incident surface 54 201022855 32380pif.doc with respect to the i-th substrate 191 on which the light-shielding point 151 is formed on the emission surface. The second substrate 192 and the third substrate 193 are not allowed to move relative to each other in the z direction which is the longitudinal direction of the unit wavefront division surface. Therefore, as is clear from FIGS. 32 to 34, the correction unit 19 realizes various extinction ratio characteristics, that is, along the Y direction in the static exposure region ER (corresponding to the z direction on the illumination pupil), and the extinction ratio according to various forms. And it has changed. In the above description, attention is paid only to the pair of light-shielding dots 15 of the substrate ΐ9, one light-shielding dot 152 of the substrate 192, and one light-shielding dot 153 of the φ substrate 193. However, it is obvious that these are formed even separately. When the light-shielding points 151 to 153 are used, the correction unit 19 also functions in the same manner as described above. Therefore, in the illumination optical systems (2 to 12) of the second embodiment, the plurality of extinction actions of the correction unit 19 can be used to sandwich the pupil intensity distribution associated with each point in the still exposure region ER. Light intensity between the pair of regions spaced apart in the γ direction by the optical axis AX (between the pair of surface light sources 32c and 32d and between the pair of surface light sources 33c and 33d in the example of FIGS. 23 and 24) The difference is adjusted. Further, in the exposure light-sensing device (2 to WS) of the second embodiment, the illumination optical system (2 to 12) can be used to perform good exposure under appropriate illumination conditions corresponding to the fine pattern of the mask Μ. And further, the desired line width, faithfully transferring the fine pattern of the mask enamel onto the wafer W at a desired position throughout the entire exposure area, wherein the illumination optical system (2 to 12) is opposite to the wafer W In the pupil intensity distribution of each point in the upper still exposure region ER, the light intensity difference of the pair of regions which are separated by the optical axis 失 and spaced apart in the Υ direction is adjusted. 55 201022855 32380pif.doc In the second embodiment, it is considered that the light amount distribution of the wafer (irradiated surface) is affected by, for example, the extinction action (for one) of the correction unit 19. In this case, the illuminance distribution of the still exposure area or the shape of the static exposure area (lighting area) can be changed by the action of the light amount distribution adjusting unit having the configuration as needed. In the second embodiment, according to the specific embodiment shown in FIG. 25 to FIG. 25, the three sheets 191 to 193 having the form of a flat plate perpendicular to the optical axis 构成 are arranged to constitute a correction unit and a line. Further, a circular light-shielding point 151 as a matte pattern is distributed on the emission surface of the first substrate 191. Further, the distribution is on the surface of the second substrate and the surface of the third substrate 193. A circular light-blocking dot 152 having a two-matting pattern and a circular light-blocking dot 153 serving as a third extinction are formed. However, the specific configuration of the correction element 19 is not limited to various forms. The number of substrates constituting the correction unit 19, the form (shape and shape) of the substrate, the posture of the substrate, and the direction in which the substrates move relative to each other are formed, and the number of unit matts of the light map* and the unit of the extinction field are two. Unit extinction The position (incidence surface or exit surface) of the formation surface of the region, the form of the distribution of the unit extinction region, the arrangement position of the correction unit 19, and the like can be various forms. Specifically, the second substrate 192 and the third substrate 193 are integrated. The first substrate 191 can be moved in the z-direction, or the arrangement of any one of the second substrate 192 and the third substrate 193 can be omitted, and the same wire as the second embodiment (four) can be used. For the optical base 56 201022855 3^38Upif.d〇c plate, for example, a substrate having at least one surface having a curvature can be used. Further, in the second embodiment, the rear focus surface of the micro fly-eye lens 8 or the rear side is later The correction unit 19 is disposed on the rear side (the mask side) of the formation surface of the pupil intensity distribution 30 formed on the illumination pupil near the side focal plane. However, the present invention is not limited thereto, and the correction unit 19 may be provided. The position of the formation surface of the pupil intensity distribution 30 or the front side (light source side) of the formation surface. Further, the correction unit 19 may be disposed at a position other than the micro fly's eye lens 8 on the rear side. Or near the lighting For example, the position of the illumination pupil disposed between the front lens group 丨2a and the rear lens group 12b of the imaging optical system 12 or the vicinity of the illumination pupil. Generally speaking, the pair of pupils formed in the illumination pupil The correction unit according to the third aspect of the present invention, wherein the intensity distribution is corrected, includes:

An optical element having a magnification on the front side of the illumination pupil, and a first substrate in the illumination pupil space between the graduated elements adjacent to the illumination pupil having a magnification learning element and having a predetermined thickness are recorded along the record And a light-transmissive second substrate placed at a position on the rear side of the illuminating light vacancy, and the f 2 substrate of the permeable layer is formed on the first substrate along a sister thickness The second semiconductor substrate includes at least one of the second unit erasing SI matte patterns, and the second substrate includes at least one second unit extinction region axis formed corresponding to the first pen. (1) The substrate and the second substrate are relatively movable along the transverse light. Further, ☆ "Illumination pupil space" is a parallel plane plate or a plane mirror having no magnification. In the second embodiment, the matte pattern of the substrate is formed. 57 201022855 32380pif.doc The unit matte region is formed as a light-shielding region which blocks the incident light by a light-shielding point formed by, for example, chromium or chromium oxide. . However, the unit extinction region may be a form other than the form of the light-shielding region. For example, at least one of the plurality of extinction patterns may be formed as a scattering region for scattering incident light or as a diffraction region for diffracting incident light. In general, a scattering region is formed by performing roughening processing on a desired region of a light-transmitting substrate, and a diffraction region is formed by performing a diffraction surface forming process on a desired region. Further, in the second embodiment, the second substrate 192 and the third base plate 193 can be respectively opposed to the first! The substrate 191 is relatively moved. However, if it is limited to this, all of the substrates 191 to 193 may be set to be fixed. In this case, it is important that the portion of the first unit extinction region (corresponding to the light-blocking point 151) of the first substrate 191 and the second unit elimination (four) region of the second substrate 192 when viewed from the optical axis Αχ direction. A part of the first unit extinction region of the first substrate 191 and a third unit extinction region of the third substrate 193 (and shading) are observed when a part of the first substrate 191 is overlapped with the light-shielding point 152. The positions of the respective substrates 191 to 193 are fixed in a state in which a part of the points 153 correspond to each other. Specifically, in the configuration corresponding to the second embodiment, the first unit extinction region and the second unit extinction region are displaced in the x direction, and the first unit extinction region and the third unit extinction region are in the x direction. In the state of being displaced, the positions of the respective substrates 191 to 193 are fixed. In other words, in the configuration in which the respective substrates are fixed, the second substrate 192 may be integrated with the substrate 193 3 of the ninth substrate 192 or the second substrate 192 and the second substrate 192 may be omitted. . That is, generally, the correction unit according to the second aspect of the present invention which is formed on the position of each substrate includes an i-th extinction pattern formed on the second plane perpendicular to the optical axis in the illumination pupil space. The second second matte pattern is formed on the second surface that is positioned in the illumination pupil space and is positioned parallel to the first rear side and parallel to the second side. The g丨 phase-removal case includes to two first unit extinction regions, and the second extinction pattern includes at least one second unit extinction region formed corresponding to the dimming region of the dynamometer. Further, when j is viewed from the optical axis direction, the i-th unit and the portion of the oblique light region overlap with a portion of the second early extinction region.

Further, referring to the first embodiment and the second embodiment, the correction unit of the fourth aspect of the present invention includes the i-th substrate of the through-hole, and is disposed in the illumination light hollow _ 'and has a predetermined thickness along the wire. And the translucent second substrate is disposed on the rear side of the second pupil substrate in the illumination pupil space, and has a predetermined thickness along the optical axis. The first substrate includes a first matte pattern formed on at least one of a surface on the incident side of the light and a surface on the light emitting side, and the second substrate includes a surface formed on the incident side of the light and a surface on the light emitting side. The second extinction pattern on at least one of the faces. The first matte pattern includes at least one first unit extinction region, and the second matte pattern includes at least one second unit extremum region formed corresponding to the less than one first unit extinction region. Further, the second unit extinction region and the second unit extinction region impart a first extinction ratio to light incident on the first unit extinction region at the first incident angle, and a second entry 59 201022855 which is different from the second incident angle. The 32380pif.doc pole shape gives an example of the formation of a four-shaped illumination on the illumination pupil, that is, a quadrupole illumination. _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The present invention can be applied to obtain the same effects. In the above embodiment, instead of the photomask, a variable pattern forming device that forms a predetermined pattern based on predetermined electronic data may be used. When such a variable pattern forming apparatus is used, even if the pattern surface is vertically disposed, the influence on the synchronization accuracy can be minimized. Further, as the variable pattern forming device, for example, a digital micromirror device (DMD) including a plurality of reflecting elements driven based on predetermined electronic data can be used. An exposure apparatus using DMD is disclosed in, for example, Japanese Patent Laid-Open No. 2004-304135, International Patent Publication No. 2006/080285, and Japanese Patent Publication No. 2007/0296936. Further, in addition to the non-light-emitting reflective spatial light modulator such as dmd, a transmissive spatial light modulator may be used, or a self-luminous type image display element may be used. Further, even when the pattern surface is arranged laterally, a variable pattern forming device can also be used. The teachings of U.S. Patent Publication No. 2007/0296936 are incorporated herein by reference. 201022855 32380pif.doc Further, in the above embodiment, the micro fly's eye lens 8 is used as an optical integrator, but an inner reflection type optical integrator (typically a cylindrical integrator (usually a cylindrical integrator) may be used instead of the micro fly's eye lens 8. R〇d integrator)). In this case, the condensing lens is disposed on the rear side of the zoom lens 7 such that the front end focus position of the condensing lens coincides with the rear focus position of the zoom lens 7 to position the incident end at the concentrating A cylindrical integrator is arranged in such a manner that the rear focus position of the optical lens or the vicinity of the rear focus position. At this time, the output end of the cylindrical integrator becomes the position of the illumination field stop 11. When a cylindrical integrator is used, a position in the optical field imaging optical system 12 downstream of the cylindrical integrator that is optically conjugate with the position of the aperture stop AS of the projection optical system PL can be referred to as illumination light. Picture. Further, since the virtual image of the primary light source that illuminates the pupil plane is formed at the position of the entrance surface of the cylindrical integrator, the position and the position where the position is optically conjugate with the position can be referred to as an illumination pupil plane. Here, the zoom lens 7, the above-mentioned collecting lens, and the cylindrical integrator can be regarded as a distributed optical system. Further, in the above embodiment, instead of the diffractive optical element 3, or in addition to the diffractive optical element 3, for example, a spatial light modulation element may be formed, which is obtained by (4) (4) (an). Ay) and the inclination angle and the inclination direction are formed by a plurality of microscopic element mirrors that are controlled by the movement, so that the human radiation beam is deflected in a small unit of each reflection surface, thereby converting the beam profile into The expected shape or size of the job. The illuminating light of the spatial illuminating element is disclosed in Japanese Laid-Open Patent Publication No. 2002-353105, for example. 201022855 32380pif.doc The subsystem of each component mentioned in the patent application scope of the application is assembled to maintain the predetermined mechanical precision, electrical precision, and optical precision, thereby manufacturing the above-mentioned exposure. Money set. In order to ensure the above various precisions, the pre-assembly of the assembly is adjusted to achieve optical precision, and various mechanisms are used to achieve the machine, and various electrical systems are adjusted for electrical precision. The various subsystems are assembled into an assembly of an exposure apparatus. The mechanical connection of various subsystems, the wiring of the electronic circuit 3, and the piping connection of the pneumatic circuit are performed. #然, Before each assembly step of the exposure device, there are steps for each subsystem to be installed. In the assembly step of assembling various subsystems into an exposure device, the following is performed to ensure the accuracy of the overall exposure. Furthermore, an exposure apparatus was manufactured in a clean room in which the temperature and the material were recorded. ◎ Eight-person, the manufacturing of the element using the exposure apparatus of the above-described embodiment is explained. Fig. 37 is a flow chart showing the manufacturing procedure of the semiconductor element φ: Ieharti. As shown in FIG. 37, in the manufacturing step of the semiconductor cultivating process, the photoresist is applied as a photosensitive material to the wafer w of the substrate of the semiconductor element (S4G), and the photoresist (coffee t_ist) t = The mixture is evaporated on the metal film (step S42). Next, using the above-mentioned 4 wire holding device', each of the image forming regions formed on the wafer W of the mask (main mask) M is formed (step S44: exposure step), and the wafer W after the completion is developed. That is, the photoresist to which the pattern is transferred is developed (step S46: development step). Then, by step (10) 62 201022855 3238Upif.doc

The surface is immersed in the circular W-state exposure device and is rotated to illustrate the application of the layer of the coating, the silk ore (four) __ layered shirt. In the process of performing the addition of the surface of the wafer slip by the photoresist pattern in the step H, for example, at least one of the film formation of the crystal, the ?8 film, or the like is included. Further, in the exposure apparatus of the step, the pattern is transferred by applying a photoresist substrate, i.e., a sheet. As a feeling nine, Fig. 38 is a flow chart showing a manufacturing procedure of a riding element such as a carbon crystal element. As shown in FIG. 38, in the manufacturing step of the liquid crystal element, the pattern forming step (step s 5 G ), the color filter ( ▲ sinking) forming step (step S52), and the cell assembly step are sequentially performed ( Step S54), and a module assembly step (step S56). In the pattern forming step of the step S50, a predetermined pattern such as a circuit pattern or an electrode pattern is formed on the glass substrate coated with the photoresist as the plate p. The pattern forming step includes: an exposing step of transferring the pattern to the photoresist layer using the exposure apparatus of the above embodiment; and a developing step of developing the pattern-transferred sheet ρ to "lighten" the light on the glass substrate The resist layer is developed to produce a photoresist layer of a shape corresponding to the pattern; and a processing step of processing the surface of the glass substrate via the developed photoresist layer. Color filter 63 is formed in the color filter forming step of step S52. 201022855 32380pif.d〇c sheet. The color filter is arranged in a matrix with a plurality of R (Red, red), G (Green, Green), B (Blue, blue) corresponding to the three dot groups' or a plurality of strips of filter groups of R, G, and B arranged in the horizontal scanning direction. In the cell assembly step of step S54, the liquid crystal panel (liquid crystal cell) is assembled using the glass substrate in which the predetermined pattern is formed in step S50 and the color filter ' formed in step S52. Specifically, the liquid crystal is injected between the glass substrate and the color filter sheet to form a liquid crystal panel. In the module assembling step of step S56, various components such as a circuit for performing display operation of the liquid crystal panel and a backlight module are mounted on the liquid crystal panel assembled in step S54. Further, the present invention is not limited to application to an exposure apparatus for manufacturing a semiconductor element, and can be widely applied to, for example, a liquid crystal display element formed on a quadrilateral glass plate or an exposure apparatus for a display device such as a plasma display. Or an exposure apparatus for manufacturing various elements such as a photographic element (CCD or the like), a micromachine, a thin film magnetic head, and a deoxyribonucleic acid (DNA) wafer. Further, the present invention can also be applied to an exposure step (exposure apparatus) in the case of producing a photomask (photomask, reticle, etc.) in which a mask pattern of various elements is formed by a photolithography step. Further, in the above embodiment, ArF excimer laser light (wavelength: 193 nm) or KrF excimer laser light (wavelength: 248 nm) is used as the exposure light beam, but the invention is not limited thereto, and the present invention may be applied to other A suitable laser source 'for example, for applying laser light with a wavelength of 157 nm

201022855 32380pif.doc f2 laser light source, etc. In the case of a large shape, a so-called liquid immersion method, that is, a method of greedy light and a medium (typically a liquid) that picks up the radiance, can be used as a method of filling a liquid. A method of locally filling a liquid as disclosed in International Publication No. ==, a method of moving a platform for holding a substrate to be an object to be exposed, such as a Japanese patent, as disclosed in Japanese Patent Publication No. 2/? A method of forming a liquid tank having a predetermined depth on a platform and holding the substrate in the liquid tank disclosed in Japanese Laid-Open Patent Publication No. 303114. The inspiration of the publication of the Japanese Patent Publication No. WO99/49504, the Japanese Patent Application Laid-Open No. Hei No. Hei 6-124873, and the Japanese Patent Laid-Open No. Hei. Further, in the above-described embodiment, a so-called polarized illumination method disclosed in U.S. Patent Application Publication No. 2/6/17,901 and No. 2007/0146676 can be applied. The teachings of U.S. Patent Publication No. 2006/0170901 and U.S. Patent Publication No. 2007/014, the disclosure of which is incorporated herein by reference. Further, in the above embodiment, the present invention is applied to a step-and-scan type exposure apparatus that scans and exposes a pattern of a mask to an imaging region of the wafer W. However, the present invention is not limited to this, and the present invention can also be applied to a step-and-repeat type exposure apparatus that repeats the operation of exposing the pattern of the mask to the wafer w at a time. 65 201022855 32380pif.doc The action of the exposure area. Further, in the above embodiment, the present invention is applied to an illumination optical system that illuminates a photomask (or wafer) in an exposure apparatus, but the invention is not limited thereto, and the present invention can also be applied to a photomask ( Ordinary illumination optical system that illuminates the illuminated surface other than the wafer. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and those skilled in the art can make some changes and dances without departing from the spirit and scope of the present invention. Therefore, the scope of the invention is defined by the scope of the appended claims. [Brief Description of the Drawings] Fig. 1 is a view schematically showing the configuration of an exposure apparatus according to a first embodiment of the present invention. Fig. 2 is a view showing a quadrupole secondary light source formed in an illumination pupil in the first embodiment. Fig. 3 is a view showing a rectangular still exposure region formed on a wafer in each embodiment. Fig. 4 is a view for explaining the behavior of a quadrupole pupil intensity distribution formed by light incident on the center point pi in the still exposure region in the first embodiment. Fig. 5 is a view for explaining the behavior of the quadrupole pupil intensity distribution formed by the light incident on the peripheral points P2 and P3 in the still exposure region in the first embodiment. Fig. 6 (a) is a view schematically showing a light intensity distribution in the Z direction along the pupil intensity distribution associated with the center point P1 in the first embodiment, Fig. 6 (b), Fig. 6 (b) The light intensity distribution in the Z direction along the pupil intensity distribution related to the peripheral points P2 and P3 in the first embodiment is schematically shown. Fig. 7 is a first view schematically showing the configuration of a correction unit according to the first embodiment. Fig. 8 is a view schematically showing the configuration of a correction unit according to the first embodiment.

Fig. 9 is a view schematically showing a configuration of a correction unit according to the first embodiment. (a) and (b) of Fig. 1 are first views for explaining the basic operation of the correction unit of the first embodiment. Fig. 11 (a) and Fig. 11 (b) are second views for explaining the basic operation of the correction unit of the first embodiment. Fig. 12 is a third diagram for explaining the basic operation of the correction unit of the second embodiment. Fig. 13 is a fourth diagram for explaining the basic operation of the correction unit of the first embodiment. FIG. 14 is a view schematically showing a state in which the pupil intensity distribution related to the center point P1 is adjusted by the correction sheet 7L in the third embodiment. FIG. 15 is a view schematically showing the second embodiment. A diagram for adjusting the pupil intensity distribution associated with the peripheral points P2, P3 by the correction unit. FIG. 16 is a first view schematically showing a configuration of a correction unit 67 201022855 32380pif.doc according to a modification of the first embodiment. (a) of FIG. 17 is a view showing a state in which a plurality of light-shielding linear regions are formed on the first substrate of the correction unit of the modification of FIG. 16, and FIG. 17(b) shows that the second substrate is formed on the second substrate. A diagram of a case of a plurality of light-shielding linear regions. Fig. 18 is a first view for explaining the basic operation of the correction unit of the modification of Fig. 16; Fig. 19 is a second view for explaining the basic operation of the correction unit of the modification of Fig. 16; Lu 20 is a third diagram for explaining the basic operation of the correction unit of the modification of Fig. 16. Fig. 21 is a view schematically showing the configuration of an exposure apparatus according to a second embodiment of the present invention. Fig. 22 is a view showing a quadrupole secondary light source formed in an illumination pupil in the second embodiment. Fig. 23 is a view for explaining the behavior of the quadrupole pupil intensity distribution formed by the light incident on the peripheral point P2 in the still exposure region in the second embodiment. Fig. 24 is a view for explaining the characteristics of the quadrupole pupil intensity distribution formed by the light incident on the peripheral point P3 in the still exposure region in the second embodiment. Fig. 25 is a first view schematically showing the configuration of a correction unit of the second embodiment. Fig. 26 is a view schematically showing the configuration of a correction unit according to the second embodiment; 2010 2855 32380 pif.doc. Fig. 27 is a view schematically showing the configuration of the correction unit of the second embodiment. Fig. 28 (a) and Fig. 28 (b) are first views for explaining the basic operation of the correction unit of the second embodiment. Fig. 29 is a second diagram for explaining the basic operation of the correction unit of the second embodiment. Fig. 30 is a third diagram for explaining the basic operation of the correction unit of the second embodiment. Fig. 31 is a view for explaining the relationship between the first relative position of the second substrate and the third substrate with respect to the first substrate and the matting action of the correction unit in the second embodiment. Fig. 32 is a view schematically showing the magnitude of the extinction action by the correction unit of Fig. 31 on a pair of surface light sources. FIG. 33 is a view schematically showing the extinction effect of the second substrate and the third substrate on the second relative position β _ 'correction unit for the pair of surface light sources in the second embodiment. The size of the map. FIG. 34 is a view schematically showing the extinction action of the correction unit on a pair of surface light sources when the second substrate and the third substrate are set to the third=pair position with respect to the first substrate in the second embodiment. The size of the map. In the second embodiment, the present invention is a schematic diagram showing the adjustment of the pupil intensity distribution associated with the peripheral point 69 in the second embodiment. 69 201022855 32380pif.doc. Fig. 36 is a view schematically showing a state in which the pupil intensity distribution associated with the peripheral point P3 is adjusted by the correction unit in the second embodiment. 37 is a flow chart showing a manufacturing procedure of a semiconductor element. Fig. 38 is a flow chart showing a manufacturing procedure of a liquid crystal element such as a liquid crystal display element. [Description of main component symbols] 1 : Light source 2: shaping optical system 3: diffractive optical element 4: afocal lens 4a, 12a: front lens group 4b, 12b: rear lens group 5: density filter 6: cone Columnar mirror system 6a: first jaw member 0b: second jaw member 7: zoom lens 8: micro fly's eye lens (optical integrator) 9, 9A, 19: correction unit 10 collecting optical system 11 mask mask 12 imaging optical system 201022855 izibupif.doc 20, 21, 21', 22, 22', 30, 32, 33, 32 丨, 33 丨: pupil intensity distribution (secondary light source) 20a, 20b, 20c ' 20d, 21a , 21a, 21b, 21b', 21c, 21d, 22a, 22af, 22b, 22b, 22c, 22d, 30a, 30b, 30c, 30d, 31c, 31d, 32a, 32b, 32c, 32c', 32d, 32d , 33a, 33b, 33c, 33c, 33d, 33d': surface light sources 51a, 51b, 52a, 52b, 151, 152, 153: light-shielding points 51 aa, 52aa, 151 a, 152a: extinction area ® 53a, 53b, 54a, 54b: linear regions 55a, 55b: combined extinction regions 91, 92, 93, 94, 191, 192, 193: substrates 91a, 92a, 93a, 94a, 191a, 192a, 193a: incident surface 91b 92b, 93b, 191b, 192b: exit surface 99, 99A, 194: drive control system AS: aperture stop: optical axis • Β Β 2, Β 3, Β 4: reference symbol ER: static exposure area IP: prescribed area Μ: Mask MS: reticle stage P1, ΡΓ: center point P2, P3, P2', P3,: peripheral point PL: projection optical system 71 201022855 32380pif.doc S40 ' S42 ' S44 ' S46, S48, S50, S52 ' S54 , S56 : Step W : Wafer WS : Wafer Platform θ: Incident Angle

72

Claims (1)

201022855 i^38Upif.doc VII. Patent application scope: 1. A correction unit for correcting the pupil intensity distribution of the illumination pupil formed in the illumination optical system, the correction unit comprising: a translucent first substrate, configured Light along the illumination optical system in an illumination pupil space between an optical element having a magnification adjacent to the front side of the illumination pupil and an optical element having a magnification adjacent to the rear side of the illumination pupil a second substrate having a predetermined thickness and a Φ transmissive property is disposed at a position on the rear side of the first substrate in the illumination pupil space, and has a predetermined thickness along the optical axis, wherein The first substrate includes a first matte pattern formed on at least one of a surface on the incident side of the light and a surface on the light emitting side, and the second substrate includes: corresponding to the first extinction pattern a second extinction pattern formed on at least one of a surface on the incident side of the light and a surface on the light emitting side, φ a relative position of the first extinction pattern and the second extinction pattern The change in the relative position of the first substrate and the second substrate and the change in the incident angle of the light incident on the first substrate, the extinction ratio of the first matte pattern and the second extinction pattern is generated. Variety. The correction unit according to claim 1, wherein at least one of the first substrate and the second substrate is movable in a predetermined direction or rotatable around a predetermined axis. 3. The correction unit according to claim 2, wherein: 73 201022855 32380pif.d〇c, the at least one substrate of the light I substrate and the second substrate is in a top extinction 聿 ^ movable from the light When viewed in the axial direction, the first preceding pattern and the fourth (fourth) light _ are superposed on each other. In the correction unit described in Item No. 3 of the above-mentioned 11th, 2nd, 2nd, 2nd, == includes: at least one first unit 2, the above 4=the third bracket: at least one second unit extinction area, 3^ The second early extinction area is formed corresponding to the ❹: light area, and the at least one of the above ί2:, = $ has the above! The same shape and phase of the unit_domain are as follows: 5. The application unit _ 2 of the correction unit, wherein at least one of the second substrates of the light plate f is wound up === the second elimination circle 1. The correction unit according to claim 5, wherein the optical axis comprises: a plurality of i-th units arranged along a circumferential direction of the first substrate and the circle of the parent “~” 7. The correction unit according to claim 6, wherein the equiangular first unit extinction area is along the circumferential direction of the circle, and the correction unit is as described in item 7 of the patent scope. Here, 74 201022855 joupif.doc The first unit extinction region includes a linear region extending radially from the center of the circle. 9. The correction unit according to claim 2, At least one of the first substrate and the second substrate is movable in a direction transverse to the optical axis, and corresponds to a direction transverse to the optical axis of the second substrate and the second substrate Relative position change, from the above light When the direction is observed, the size of the overlap region in which the i-th matte pattern and the second quenched φ light pattern are overlapped is changed. 10. The correction unit according to any one of claims 1 to 9 The first substrate and the second substrate have a parallel plane plate. The correction unit according to the first aspect of the invention, wherein the first substrate and the second substrate are parallel to each other. The correction unit according to any one of the preceding claims, wherein the first matte pattern is formed on a surface of the first substrate on the emission side, and the second extinction is performed. The correction unit according to any one of the preceding claims, wherein the first matte pattern comprises: a distributed formation a plurality of first unit extinction regions, wherein the second extinction pattern includes a plurality of second unit extinction regions distributed corresponding to the plurality of first unit extinction regions. 75 201022855 i238Upif.doc 14· The correction unit according to any one of claims 1 to 13, wherein at least the extinction pattern of the first circumstance and the second extinction pattern of π includes: shading to block incident light 15. The compensation unit according to any one of the above-mentioned claims, wherein, at least one of the first matte pattern and the second extinction pattern comprises: a scattering region that scatters incident light . The correction unit according to any one of the preceding claims, wherein the at least one of the first matte pattern and the second extinction pattern comprises: diffracting incident light The diffraction area. 17. The correction unit corrects the pupil intensity distribution of the illumination pupil formed in the illumination light (four) system. The above correction unit includes: The first matte pattern 'is formed on the first surface perpendicular to the optical axis of the illumination optical system. The first surface is located on the front side of the illumination pupil and has a magnification. The first element is adjacent to the illumination element and has a magnification. a rear side and an illumination pupil space between the optical elements having a magnification; and a second extinction pattern positioned in the illumination pupil space later than the first surface and formed at the ith position The parallel light surface; the first light pattern includes at least one of the second light extinction patterns including at least one of the above! Unit ί zone_ correspondingly formed H second unit extinction zones, 76 201022855. j 厶jovpif.doc Part 18. The correction unit as described in claim 17 of the patent application, wherein the unit 1 unit extinction zone and the above The two unit extinction regions have a shape of the same size and the same size, and the first unit extinction region 4 is displaced in the first direction transverse to the optical axis. A correction unit according to claim 17 or claim 3, wherein the correction unit includes: the translucent first substrate ′ is disposed on an optical element having a magnification adjacent to a front side of the illumination pupil, a second substrate having a predetermined thickness in an illumination pupil space between the optical elements having a magnification on the rear side of the illumination pupil and having a magnification, and a light transmissive second substrate; a position disposed on the rear side of the first substrate in the illumination pupil space, and having a predetermined thickness along the optical axis, wherein the first matte pattern is formed on a surface on the incident side of the first substrate At least one of the surfaces on the light-emitting side, the second matte pattern is formed on at least one of a surface on a light incident side and a light-emitting side surface of the second substrate. 20. A correction unit for correcting a pupil intensity distribution of an illumination pupil formed in an illumination optical system, wherein the correction unit includes: a translucent first substrate ′ disposed adjacent to a front side of the illumination aperture An optical element having a magnification, and an illumination pupil space between the optical element having a magnification adjacent to the rear side 77 201022855 jzj«upif.doc of the illumination pupil, and having an optical axis along the illumination optical system a predetermined thickness and a second substrate having a light transmissive property disposed at a position further rearward of the first substrate than the first substrate, and having a predetermined thickness along the optical axis, wherein the first substrate includes a first matte pattern formed on at least one of a surface on the incident side of the light and a surface on the light emitting side, wherein the second substrate includes at least a surface formed on the incident side of the light and a surface on the light emitting side a second extinction pattern on one surface, © the first matte pattern includes at least one i-th unit extinction region, and the second extinction pattern includes at least one of the second unit extinction regions At least one second unit extinction region formed corresponding to the domain, the first substrate and the second substrate are relatively movable along a first direction transverse to the optical axis. The correction unit according to claim 2, wherein the first unit extinction region and the second unit extinction region/domain have the same outer shape and the same size, and the disk: C direction In the case of observation, the first unit extinction region "the reference state in which the two opacity regions overlap each other is used as the center, and when the above-mentioned first-axis direction is bribed, the portion in which the -th portion of the first-order single-light region overlaps is determined. The 1 substrate and the second substrate are relatively movable. Correction = Item to 2nd Radiation - Item 78 201022855 _ One Heart One w_pif.doc The main base plate and the above second substrate have a parallel plane plate form. 23. If the application of the full-time enclosure 22 gas-cultivating unit is performed, the dead substrate and the second substrate are arranged in parallel with each other. The correction sheet 7G according to any one of the items 19 to 23, wherein the surface is formed on the surface on the emission side of the first substrate/on the second substrate. The above-mentioned incidental invention, wherein the first 'Xiaoguang pattern includes a plurality of first unit elimination regions formed by the distribution, the relative number is the same as the correction sheet according to any one of Item 7 to Item 24. The first matte pattern includes a plurality of second unit extinction regions formed by 77 cloths corresponding to the plurality of first unit extinction regions. 6. In the case of applying for the suspected (4) item to the third item of the item, the correction is as follows: 1 unit&gt; Xiaoguang 11 domain and the second (four) light region in the above-mentioned field 2 The position of the matte region includes: a sub-mesh extinction sequence as described in any one of the correction items of the shading area supplemented by the person shooting line, and an eve ml early listening area in the second unit extinction area including: The axis of the present invention is the 79 201022855 J/J6 Upif.d〇C correction unit according to any one of claims 17 to 27, wherein the first unit > the xiaoguang region and the second unit The diffraction area to the J unit extinction area package I in the extinction area is a diffraction area for diffracting the human light. 29. The correction unit corrects the pupil intensity distribution of the illumination pupil formed in the illumination optical system, and the correction unit The first substrate having a light transmissive property is disposed between an optical element having a magnification adjacent to the front side of the illumination pupil and an optical element having a magnification adjacent to a rear side of the illumination pupil. _, and along the optical axis of the illumination optical system described above a predetermined thickness; and a second substrate having a light transmissive property disposed in the illumination pupil space at a position further than the first substrate and having a thickness along the optical axis, wherein the first substrate includes a first substrate An i-th matte pattern on at least one of a surface on the incident side of the light and a surface on the light-emitting side, wherein the second substrate includes at least one of a surface formed on the incident side of the light and a surface on the light-emitting side a second matte pattern on the surface, the first matte pattern includes at least one second unit extinction region, and the second matte pattern includes at least one second unit extinction region formed corresponding to the at least one second unit extinction region, The first unit extinction region and the second unit extinction region provide a second extinction ratio to light incident on the first unit extinction region at a first incident angle, and a second incident angle different from the first incident angle. The light incident on the first unit extinction region is given a second extinction ratio which is the same as the second extinction ratio, '201022855 q ovpif.doc the position of the first substrate and the second substrate The correction unit according to claim 29, wherein the correction unit corresponds to a change in the relative position of the first substrate and the second substrate, and a person that emits light toward the first substrate The gradation of the first gradation pattern and the gradation of the gradation of the gradation of the gradation of the gradation of A unit of the unit matte region is overlapped with a portion of the second unit matte region. The correction unit according to claim 29, wherein the first substrate and the second substrate are transversely cut The optical axis is relatively movable in the first direction. The illumination optical system illuminates the illuminated surface by using light from a light source, and the illumination optical system includes: a cloth forming light material system having an optical property, and touching (4) after the light accumulation product Forming a light (four) degree distribution on the aperture; and correcting the correction 2 as described in any of the above-mentioned patent scopes to the 32th item, in the above-mentioned illumination pupil space including the above-mentioned rear illumination aperture . 34. The illumination optical system according to Item 5% of the patent application, wherein the unit two-knife stone has a slender rectangular shape of the early position of the cutting blade in a predetermined direction, and the correction unit (4) is positioned, and the light is fixed. The optical axis of the above-mentioned (four) silk is clamped, and the light of the (four) domain is separated in the direction orthogonal to the direction of the *. 81 201022855 w:) isupif.doc 35. An illumination optical system that illuminates an illuminated surface using light from a light source, the illumination optical system comprising: a distribution forming optical system having an optical integrator and being optical The integrator is later _ (four) on the pupil to form a New · distribution; and. The correction unit according to any one of claims 1 to 32, wherein the correction unit is disposed in the illumination aperture space including the illumination aperture on the rear side. The optical integrator has an elongated rectangular unit wavefront portion #j plane along a predetermined direction, and the predetermined direction corresponds to the upper frequency positive unit 〇 first direction. The illumination optical system according to any one of claims 33 to 35, further comprising: a light-quantifying portion, which is distributed on the surface of the surface, or formed on the illuminated surface The shape of the lighting area is changed. 3. The optical system according to claim 36, wherein the light quantity distribution adjusting unit corrects the influence of the correction unit on the light amount distribution on the surface. Specifically, the illumination optical system is combined with the projection optical system, and the projection optical system is formed into an optical residual surface with the above-mentioned observation Φ and is in the above (4) silk system. The position of the aperture face. </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; The pupil intensity distribution is formed on the upper surface, and the correction unit is disposed in the adjacent illumination pupil. The illumination optical system according to any one of claims 33 to 38, wherein the above-mentioned distribution forming optical system comprises: a relay optical system, and the above-described t-optical system pair is from the optical integrator The light is guided to form a pupil intensity distribution on the illumination pupil on the rear side, and the correction sheet 7C is disposed in the illumination pupil space including the illumination pupil on the rear side. The illumination optical system according to claim 4, wherein the relay optical system is formed on the illumination pupil of the rear side to form an optical _ position adjacent to the optical integration material . The illuminating optical system according to any one of claims 33 to 41, wherein the predetermined pattern is illuminated to expose the predetermined pattern to the photosensitive substrate. . The exposure apparatus according to claim 42, wherein the exposure apparatus includes: 'a projection optical system that forms an image of the predetermined pattern on the photosensitive substrate' to make the predetermined pattern and the photosensitive The substrate is relatively moved along the sweeping direction with respect to the projection optical transparency to project the above-described predetermined pattern onto the photosensitive substrate. The exposure apparatus according to claim 43, wherein the predetermined direction in the optical integrator corresponds to a direction orthogonal to the scanning direction. 45. A method of manufacturing a device, comprising: an exposing step of exposing the prescribed pattern to the susceptibility substrate using an exposure apparatus as described in claim 42 to claim 44; a mask layer having a pattern of the above-mentioned mosquitoes == a mask layer having a shape corresponding to the predetermined pattern formed on the surface of the substrate; and a surface step, a table of the photosensitive substrate via the mask layer