TWI489219B - Illumination optical system, exposure apparatus and device manufacturing method - Google Patents

Description

Illumination optical system, exposure device, and component manufacturing method

The present invention relates to a correction unit, an illumination optical system, an exposure apparatus, and a component manufacturing method. More specifically, the present invention relates to an illumination optical system suitable for an exposure apparatus for manufacturing an element such as a semiconductor element, a photographic element, a liquid crystal display element, a thin film magnetic head or the like by a lithography process.

In such a typical exposure apparatus, light emitted from a light source is formed as a substantial surface light source composed of a plurality of light sources via a fly eye lens as an optical integrator. Light source (usually the specified light intensity distribution on the illumination pupil). Hereinafter, the light intensity distribution on the illumination pupil is referred to as "the pupil intensity distribution". Further, the illumination diaphragm is defined as an optical system between the illumination pupil and the illuminated surface (in the case of an exposure apparatus, a mask or a wafer), so that the illuminated surface becomes an illumination pupil. The position of the Fourier transform surface.

The light from the secondary light source is condensed by a condenser lens, and then the reticle forming the predetermined pattern is superimposed and illuminated. The light penetrating the reticle is imaged on the wafer via the projection optical system, thereby projecting (transferring) a mask pattern onto the wafer. The pattern formed on the reticle is highly integrated, and in order to accurately transfer the fine pattern onto the wafer, a uniform illuminance distribution must be obtained on the wafer.

In order to accurately transfer the fine pattern of the photomask onto the wafer, there has been proposed a technique of forming an endless belt (a belt-like shape) or a multi-pole shape (a bipolar shape, a quadrupole shape, etc.). The intensity distribution increases the depth of focus or the resolving power of the projection optical system (refer to Patent Document 1).

[Patent Document 1] US Patent Publication No. 2006/0055834

In order to faithfully transfer the fine pattern of the mask onto the wafer, it is necessary not only to adjust the pupil intensity distribution to the desired shape, but also to correlate the pupil intensity with respect to the points on the wafer as the final illuminated surface. The distribution is adjusted to be roughly uniform. If the uniformity of the pupil intensity distribution at each point on the wafer is deviated, the line width of the pattern at each position on the wafer may be deviated, so that the reticle of the mask may not be faithfully performed with the expected line width. The pattern is transferred to the wafer throughout the entire exposed area.

Further, regardless of the shape of the pupil intensity distribution formed in the illumination pupil, if the pupil intensity distribution associated with each point on the wafer as the final illuminated surface is sandwiched by the optical axis and separated in a predetermined direction If the difference in light intensity between a pair of spaced regions is too large, there is a fear that the pattern is exposed from the intended position and is exposed.

The present invention has been made in view of the above problems, and provides an illumination optical system capable of adjusting the pupil intensity distribution at each point on the illuminated surface to be substantially uniform. Further, the present invention provides an exposure apparatus which can perform good exposure under appropriate illumination conditions by using an illumination optical system in which the pupil intensity distribution at each point on the illuminated surface is adjusted to be substantially uniform.

Further, the present invention provides an illumination optical system capable of illuminating a pair of regions spaced apart in a predetermined direction by an optical axis in a pupil intensity distribution associated with each point on an illuminated surface The intensity difference is adjusted. Further, the present invention provides an exposure apparatus which can use light intensity of a pair of regions which are spaced apart in a predetermined direction by sandwiching an optical axis with respect to a pupil intensity distribution associated with each point on an illuminated surface The illumination optical system described above is adjusted to perform good exposure under appropriate illumination conditions.

In order to solve the above problems, a first aspect of the present invention provides a correction unit that corrects a pupil intensity distribution of an illumination pupil formed in an illumination optical system, the correction unit including a translucent first substrate disposed adjacent to each other An optical element between the optical element having a power on the front side of the illumination pupil and an optical element having a magnification adjacent to the rear side of the illumination pupil, and along the illumination optical system a second substrate having a predetermined thickness and a light transmissive property, and a second substrate disposed in the illumination pupil space at a position further rearward than the first substrate, and having a predetermined thickness along the optical axis, wherein The first substrate includes a first matte pattern formed on at least one of a surface on the incident side of the light and a surface on the light emitting side, and the second substrate includes a first matte pattern corresponding to the first matte pattern. a second matte pattern on at least one of a surface on the incident side of the light and a surface on the light emitting side, wherein the relative position of the first extinction pattern and the second extinction pattern is changeable, corresponding to Change in the angle of incidence relative positions of said first substrate and the second substrate and toward the first substrate incident light extinction rate of the first extinction pattern and said second extinction resulting pattern is changed.

According to a second aspect of the present invention, there is provided a correction unit that corrects a pupil intensity distribution of an illumination pupil formed in an illumination optical system, the correction unit including: a first extinction pattern formed perpendicular to an optical axis of the illumination optical system In the first surface, the first surface is located in an illumination pupil space between the optical element having a magnification adjacent to the front side of the illumination pupil and the optical element having a magnification adjacent to the rear side of the illumination pupil And a second matte pattern positioned at a position rearward of the first surface in the illumination pupil space and formed on a second surface parallel to the first surface; the first extinction pattern including at least one In the first unit extinction region, the second extinction pattern includes at least one second unit extinction region formed corresponding to the at least one first unit extinction region, and a part of the first unit extinction region when viewed from the optical axis direction It overlaps with a part of the above-mentioned second unit extinction region.

According to a third aspect of the present invention, there is provided a correction unit that corrects a pupil intensity distribution of an illumination pupil formed in an illumination optical system, the correction unit including a translucent first substrate disposed adjacent to the illumination pupil a front side and an optical element having a magnification, and an illumination pupil space between the optical element having a magnification adjacent to the rear side of the illumination pupil, and having a predetermined thickness along an optical axis of the illumination optical system; And the light-transmissive second substrate is disposed at a position rearward of the first substrate in the illumination pupil space, and has a predetermined thickness along the optical axis, and the first substrate includes light formed on the first substrate a first matte pattern on at least one of a surface on the incident side and a surface on the light-emitting side, wherein the second substrate includes at least one of a surface on the incident side of the light and a surface on the light-emitting side. a second matte pattern, wherein the first matte pattern includes at least one first unit extinction region, and the second extinction pattern includes at least one formed corresponding to the at least one first unit extinction region 2 extinction unit area, the first substrate and the second substrate are movable relative to the first direction transverse to the optical axis.

According to a fourth aspect of the present invention, there is provided a correction unit that corrects a pupil intensity distribution of an illumination pupil formed in an illumination optical system, the correction unit including a translucent first substrate disposed adjacent to the illumination pupil a front side and an optical element having a magnification, and an illumination pupil space between the optical element having a magnification adjacent to the rear side of the illumination pupil, and having a predetermined thickness along an optical axis of the illumination optical system; And the light-transmissive second substrate is disposed at a position rearward of the first substrate in the illumination pupil space, and has a predetermined thickness along the optical axis, and the first substrate includes light formed on the first substrate a first matte pattern on at least one of a surface on the incident side and a surface on the light-emitting side, wherein the second substrate includes at least one of a surface on the incident side of the light and a surface on the light-emitting side. a second matte pattern, wherein the first matte pattern includes at least one first unit extinction region, and the second extinction pattern includes at least one formed corresponding to the at least one first unit extinction region In the second unit extinction region, the first unit extinction region and the second unit extinction region provide a first extinction ratio to light incident on the first unit extinction region at a first incident angle, and the pair is different from the first incident angle. The second incident light having a second incident angle and incident on the first unit extinction region is provided with a second extinction ratio different from the first extinction ratio, and the positional relationship between the first substrate and the second substrate can be changed.

A fifth aspect of the present invention provides an illumination optical system that illuminates an illuminated surface using light from a light source, the illumination optical system comprising: a distribution creating optical system having an optical integrator and The optical integrator further forms a pupil intensity distribution on the illumination pupil on the rear side, and the correction unit according to any one of the first aspect to the fourth aspect, and is disposed in the illumination pupil space including the illumination pupil on the rear side Inside.

A sixth aspect of the present invention provides an illumination optical system that illuminates an illuminated surface using light from a light source, the illumination optical system comprising: a distribution forming optical system having an optical integrator and being later than the optical integrator a pupil intensity distribution is formed on the side illumination pupil; and any one of the first to fourth aspect correction means is disposed in the illumination pupil space including the illumination pupil of the rear side, and the optical integrator The unit wavefront discrimination surface having an elongated rectangular shape along a predetermined direction, wherein the predetermined direction corresponds to the first direction in the correction unit.

According to a seventh aspect of the invention, there is provided an exposure apparatus comprising: the illumination optical system according to the fifth aspect or the sixth aspect, wherein the predetermined pattern is illuminated to expose the predetermined pattern to the photosensitive substrate.

An eighth aspect of the present invention provides a device manufacturing method comprising: an exposure step of exposing the predetermined pattern to the photosensitive substrate using an exposure apparatus according to a seventh aspect; and a developing step of transferring the above-mentioned photosensitive substrate Developing the photosensitive substrate in a predetermined pattern, forming a mask layer having a shape corresponding to the predetermined pattern on a surface of the photosensitive substrate; and processing a step of facing the surface of the photosensitive substrate via the mask layer Processing.

[Effects of the Invention]

An illumination optical system according to a first aspect of the present invention includes a correction unit that is disposed in an illumination pupil space including an illumination pupil on a rear side of the optical integrator, and performs a pupil intensity distribution formed on the illumination pupil Correction. The correction unit includes a first substrate on which the first extinction pattern is formed, and a second substrate on the rear side of the first substrate and in which the second extinction pattern is formed, and the relative position of the first extinction pattern and the second extinction pattern can be changed. . Further, the correction unit is configured such that the first matte pattern and the second extinction pattern are changed in accordance with a change in the relative position of the first substrate and the second substrate and a change in the incident angle of the light incident on the first substrate. The resulting extinction rate changes.

As a result, the pupil intensity distributions associated with the respective points on the illuminated surface can be independently adjusted by the extinction action of the correction unit, and the pupil intensity distributions associated with the respective points can be adjusted to be substantially the same as each other. Distribution of traits. Therefore, in the illumination optical system according to the first aspect of the present invention, for example, a density filter that uniformly adjusts the pupil intensity distribution at each point on the surface to be illuminated, and an independent filter can be used. The synergistic effect of the correction unit that adjusts the pupil intensity distributions associated with each point is adjusted to adjust the pupil intensity distribution at each point on the illuminated surface to be substantially uniform. Further, in the exposure apparatus of the present invention, an illumination optical system in which the pupil intensity distribution at each point on the surface to be irradiated is adjusted to be substantially uniform can be used, and good exposure can be performed under appropriate illumination conditions. Make good components.

An illumination optical system according to a third aspect of the present invention includes a correction unit configured by a pair of substrates disposed at a position directly in front of or behind the illumination pupil on the rear side of the optical integrator. At least one first unit extinction region is formed on the incident surface or the emitting surface of the first substrate, and at least one second unit is formed on the incident surface or the emitting surface of the second substrate in correspondence with the first unit extinction region. Extinction area. The first substrate and the second substrate can move relative to each other along the longitudinal direction of the unit wavefront discrimination surface of the optical integrator, for example.

According to the above configuration, the correction unit realizes a plurality of extinction ratio characteristics, that is, the extinction ratio changes according to various forms along a predetermined direction of the illuminated surface. Therefore, in the illumination optical system according to the third aspect of the present invention, the optical axis intensity can be sandwiched between the pupil intensity distributions associated with the respective points on the illuminated surface by the plurality of extinction actions of the correction unit. The difference in light intensity between a pair of regions spaced apart in a predetermined direction is adjusted. Further, in the exposure apparatus of the present invention, the illumination optical system can be used to perform good exposure under appropriate illumination conditions, thereby producing a good component, and the illumination optical system is associated with each point on the illuminated surface. In the pupil intensity distribution, the light intensity difference of a pair of regions spaced apart in the predetermined direction by the optical axis is adjusted.

The above described features and advantages of the present invention will be more apparent from the following description.

Embodiments of the present invention will be described based on the drawings. FIG. 1 is a view schematically showing a configuration of an exposure apparatus according to a first embodiment of the present invention. In FIG. 1, the normal direction of the exposure surface (transfer surface) of the wafer W, which is a photosensitive substrate, is set to the Z-axis, and is parallel to the paper surface of FIG. 1 in the exposure surface of the wafer W. When set to the Y axis, the direction perpendicular to the paper surface of FIG. 1 in the exposure surface of the wafer W is set to the X axis.

Referring to Fig. 1, in the exposure apparatus of the first embodiment, an exposure light beam (illumination light) is supplied from the light source 1. As the light source 1, for example, an ArF excimer laser light source that supplies light of a wavelength of 193 nm or a KrF excimer laser light source that supplies light of a wavelength of 248 nm can be used. The light beam emitted from the light source 1 is incident on the afocal lens 4 via the shaping optical system 2 and the diffractive optical element 3 for the ring illumination. The shaping optical system 2 has a function of converting a substantially parallel light beam from the light source 1 into a substantially parallel light beam having a predetermined rectangular cross section, and guiding the light beam to the diffractive optical element 3.

The afocal lens 4 is such that the front focus position of the afocal lens 4 substantially coincides with the position of the diffractive optical element 3, and the rear focus position of the afocal lens 4 is substantially the same as the position of the predetermined surface IP indicated by a broken line in the figure. An afocal system (no focus optics) that is set in a consistent manner. The diffractive optical element 3 is constructed by forming a step on the substrate having a pitch equivalent to a wavelength of an exposure beam (illumination light) having a diffraction angle around the incident beam The role of shooting. Specifically, the diffractive optical element 3 for ring-band illumination has a function of being in a far field (or Fraunhofer) when a parallel beam having a rectangular cross section is incident. The light intensity distribution in the banded region is formed in the diffraction region.

Therefore, the substantially parallel light beams incident on the diffractive optical element 3 form an annular band-shaped light intensity distribution on the pupil plane of the afocal lens 4, and then are emitted from the afocal lens 4 in an angular distribution of the endless belt. In the optical path between the front lens group 4a and the rear lens group 4b of the afocal lens 4, a density filter is disposed in the vicinity of the pupil position of the afocal lens 4 or the vicinity of the pupil position. 5 and the axicon system 6. The density filter 5 has a form of a parallel flat plate, and a dense pattern containing light-shielding dots such as chrome or chrome oxide is formed on the optical surface of the density filter 5. That is, the density filter 5 has a transmittance distribution having a different transmittance depending on the incident position of the light. The specific function of the density filter 5 and the configuration and action of the conical cylindrical mirror system 6 will be described later.

The light passing through the afocal lens 4 is via a zoom lens 7 for making the σ value (σ value = reticle side numerical aperture of the illumination optical system / reticle side numerical aperture of the projection optical system) variable, and It is incident on a micro fly eye lens (or fly eye lens) 8 as an optical integrator. The micro fly's eye lens 8 is, for example, an optical element including a plurality of microlenses having positive refractive power which are vertically and horizontally arranged in a dense manner, and is formed by performing etching treatment on a parallel plane plate to form a minute lens group.

Each of the minute lenses constituting the micro fly's eye lens is smaller than each lens element constituting the fly-eye lens. Further, unlike the fly-eye lens composed of the lens members that are isolated from each other, the micro fly's eye lens is not integrally isolated from each other but is formed integrally with each other. However, considering that the lens elements having positive refractive power are arranged vertically and horizontally, the micro fly-eye lens is the same wavefront-divided optical integrator as the fly-eye lens. Further, as the micro fly's eye lens 8, for example, a cylindrical micro fly's eye lens may be used. The constitution and function of the columnar micro fly's eye lens are disclosed, for example, in U.S. Patent No. 6,913,373.

The position of the predetermined surface IP is disposed in the vicinity of the front focus position of the zoom lens 7 or the front focus position, and the incident surface of the micro fly-eye lens 8 is disposed in the vicinity of the rear focus position of the zoom lens 7 or the rear focus position. In other words, the zoom lens 7 substantially arranges the predetermined surface IP and the incident surface of the micro fly-eye lens 8 in a Fourier transform relationship, and arranges the pupil plane of the afocal lens 4 and the incident surface of the micro fly-eye lens 8 to be substantially optically conjugated. .

Therefore, similarly to the pupil plane of the afocal lens 4, an annular field (illumination field of view) centered on the optical axis AX is formed on the incident surface of the micro fly's eye lens 8, for example. The overall shape of the annular field is similarly changed depending on the focal length of the zoom lens 7. The incident surface of each of the microlens lenses 8 (that is, the unit wavefront split surface) is, for example, a rectangular shape having a long side in the Y direction and a short side along the X direction, and is formed in the light. The shape of the illumination area on the cover M (and thus the shape of the exposure area to be formed on the wafer W) is similarly rectangular.

The light beam incident on the micro fly's eye lens 8 is two-dimensionally divided, and the position of the rear focus surface or the rear side focus surface of the micro fly-eye lens 8 (and further the position of the illumination pupil) is formed and formed in the micro A secondary light source having substantially the same light intensity distribution of the incident surface of the fly-eye lens 8 , that is, a secondary light source formed of a ring-shaped substantial surface light source centered on the optical axis AX (the pupil intensity) distributed). A correction unit 9 is disposed in the vicinity of the rear focal plane or the rear focal plane of the micro fly-eye lens 8. The configuration and function of the correction unit 9 will be described later.

Further, an illumination aperture stop (not shown) is disposed in the vicinity of the rear focal plane or the rear focal plane of the micro fly-eye lens 8, and the illumination aperture stop has a ring-shaped secondary light source. Corresponding ring-shaped opening (light transmitting portion). The illumination aperture stop can be freely inserted into the illumination optical path or freely extracted from the illumination optical path, and the illumination aperture stop can be configured as: a plurality of aperture lights that are switchable and have openings of different sizes and shapes. Hey. As the switching method of the aperture stop, for example, a well-known turret method, a slide method, or the like can be used. The illumination aperture stop is disposed at a position substantially optically conjugate with the entrance pupil plane of the projection optical system PL to be described later, and contributes to the specification of the range of illumination of the secondary light source.

The light passing through the micro fly's eye lens 8 and the correction unit 9 is superimposed on the mask blind 11 by the collecting optical system 10. In this manner, a rectangular field corresponding to the shape and focal length of the microlens of the micro fly's eye lens 8 is formed on the mask mask 11 as the illumination field stop. The light passing through the rectangular opening (light transmitting portion) of the mask mask 11 is superposed on the mask M having the predetermined pattern formed thereon via the imaging optical system 12 including the front lens group 12a and the rear lens group 12b. Lighting. That is, the imaging optical system 12 forms an image of the rectangular opening portion of the mask mask 11 on the mask M.

A pattern to be transferred is formed on the mask M held on the mask stage MS, and has a long side in the Y direction and a short side along the X direction in the entire pattern area ( The pattern area of the slit shape is illuminated. Light that has passed through the pattern region of the mask M passes through the projection optical system PL, and an image of the mask pattern is formed on the wafer (photosensitive substrate) W held on the wafer platform WS. That is, a rectangular static exposure region having a long side in the Y direction and a short side along the X direction on the wafer W in an optically corresponding manner to the rectangular illumination region on the mask M (effective A pattern image is formed in the exposed area).

Thus, according to the so-called step and scan method, the mask platform MS is made along the X direction (scanning direction) in a plane (XY plane) orthogonal to the optical axis AX of the projection optical system PL. The wafer platform WS synchronously moves (scans), and then moves (scans) the mask M and the wafer W, thereby scanning and exposing the mask pattern to a shot area (exposure area) on the wafer W, The photographing region has a width equal to the dimension of the still exposure region in the Y direction, and has a length corresponding to the scanning amount (movement amount) of the wafer W.

The conical cylindrical mirror system 6 is composed of a first meandering member 6a and a second meandering member 6b which are directed toward the light source side and have a concave conical refractive surface from the light source side. The member facing the mask side is a member that faces the mask side and faces the convex conical refracting surface toward the light source side. Further, the concave conical refractive surface of the first meandering member 6a and the convex conical refractive surface of the second meandering member 6b are complementarily formed so as to be able to abut each other. Further, at least one of the first weir member 6a and the second weir member 6b is movable along the optical axis AX, and the interval between the first weir member 6a and the second weir member 6b is variable.

Here, in a state in which the first meandering member 6a and the second meandering member 6b are in contact with each other, the conical cylindrical mirror system 6 functions as a parallel flat plate, and the annular belt-shaped secondary light source is not formed. Make an impact. However, when the first meandering member 6a and the second weir member 6b are separated, the width of the endless belt-shaped secondary light source (the difference between the outer diameter and the inner diameter of the annular strip-shaped secondary light source is 1/2) It remains fixed while the outer diameter (inner diameter) of the endless belt-shaped secondary light source changes. That is, the endless belt (inner diameter/outer diameter) and size (outer diameter) of the endless belt-shaped secondary light source are changed.

The zoom lens 7 has a function of similarly enlarging or reducing the overall shape of the endless belt-shaped secondary light source. For example, the focal length of the zoom lens 7 is enlarged from a minimum value to a predetermined value, whereby the overall shape of the endless belt-shaped secondary light source is similarly enlarged. In other words, by the action of the zoom lens 7, the annular band ratio of the endless belt-shaped secondary light source does not change, and the width and size (outer diameter) of the secondary light source change together. Thus, the ring-to-belt ratio and the size (outer diameter) of the endless belt-shaped secondary light source can be controlled by the action of the conical cylindrical mirror system 6 and the zoom lens 7.

In the first embodiment, as described above, the secondary light source formed by the micro fly-eye lens 8 is used as a light source to perform Kohler illumination on the mask M disposed on the illuminated surface of the illumination optical system (2 to 12). ). Therefore, the position at which the secondary light source is formed is optically conjugate with the position of the aperture stop AS of the projection optical system PL, and the surface on which the secondary light source is formed can be referred to as the illumination pupil plane of the illumination optical system (2 to 12). Typically, the illuminated surface (the surface on which the mask M is disposed or the surface on which the wafer W is disposed when the projection optical system PL is considered as the illumination optical system) is optically responsive to the illumination pupil plane. Fourier transform surface.

In addition, the pupil intensity distribution means an illumination pupil plane of the illumination optical system (2 to 12) or a light intensity distribution (luminance distribution) on a plane optically conjugate with the illumination pupil plane. When the number of wavefront divisions generated by the micro fly's eye lens 8 is relatively large, the comprehensive light intensity distribution formed on the incident surface of the micro fly-eye lens 8 and the integrated light intensity distribution (the pupil intensity distribution) of the entire secondary light source are large. ) shows a high correlation. Therefore, the light intensity distribution of the incident surface of the micro fly-eye lens 8 and the surface optically conjugate with the incident surface can also be referred to as a pupil intensity distribution. In the configuration of FIG. 1, the diffractive optical element 3, the afocal lens 4, the zoom lens 7, and the micro fly's eye lens 8 constitute a distribution forming optical system which forms an illumination light on the rear side of the optical fly-eye lens 8 A pupil intensity distribution is formed on the crucible.

Instead of the diffractive optical element 3 for the ring illumination, a diffractive optical element (not shown) for multi-pole illumination (bipolar illumination, quadrupole illumination, octopolar illumination, etc.) can be set in the illumination optical path, whereby Multi-pole illumination is available. A diffractive optical element for multi-pole illumination has a function of forming a multipole (dipole, quadrupole, octapole, etc.) in a far field when a parallel beam having a rectangular cross section is incident. Light intensity distribution. Therefore, the light beam of the diffractive optical element for multipolar illumination is formed on the incident surface of the micro fly's eye lens 8, for example, a plurality of predetermined shapes (arc shape, circular shape, etc.) centered on the optical axis AX. A multi-polar field formed by it. As a result, a multi-pole secondary light source similar to the field formed on the incident surface of the micro fly-eye lens 8 is formed in the vicinity of the rear focal plane or the rear focal plane of the micro fly-eye lens 8.

Further, in place of the diffractive optical element 3 for the endless belt illumination, a diffractive optical element (not shown) for circular illumination can be set in the illumination optical path, whereby normal circular illumination can be performed. The diffractive optical element for circular illumination has a function of forming a circular light intensity distribution in a far field when a parallel beam having a rectangular cross section is incident. Therefore, the light beam passing through the diffractive optical element for circular illumination forms, for example, a circular field centered on the optical axis AX on the incident surface of the micro fly's eye lens 8. As a result, a circular secondary light source having the same shape as the field formed on the incident surface of the micro fly-eye lens 8 is formed in the vicinity of the rear focal plane or the rear focal plane of the micro fly-eye lens 8. Further, instead of the diffractive optical element 3 for the endless belt illumination, a diffractive optical element (not shown) having appropriate characteristics can be set in the illumination optical path, whereby various forms of anamorphic illumination can be performed. For example, a well-known turret method, a sliding method, or the like can be used as the switching mode of the diffractive optical element 3.

In the following description, in order to make the effect of the first embodiment easy to understand, an illumination pupil near the rear focal plane or the rear focal plane of the micro fly-eye lens 8 is formed as shown in FIG. A quadrupole pupil intensity distribution (secondary light source) 20 composed of four arc-shaped substantial surface light sources (hereinafter, simply referred to as "surface light sources") 20a, 20b, 20c, and 20d. Moreover, the correction unit 9 is disposed on the rear side (the mask side) of the formation surface of the pupil-shaped pupil intensity distribution 20. In the following description, when only the "illumination pupil" is used, it means the illumination pupil of the rear focus surface of the micro fly-eye lens 8 or the vicinity of the rear focus surface.

Referring to FIG. 2, the quadrupole pupil intensity distribution 20 formed in the illumination pupil includes: a pair of surface light sources 20a and 20b that are spaced apart in the X direction by the optical axis AX; and the optical axis AX is clamped. A pair of arc-shaped substantial surface light sources 20c and 20d spaced apart in the Y direction. Further, the X direction on the illumination pupil is the short-side direction of the rectangular microlens of the micro fly-eye lens 8 (the short-side direction of the rectangular unit-wave division surface), and the X direction corresponds to the scanning of the wafer W. direction. Further, the Y direction on the illumination pupil is the longitudinal direction of the rectangular microlens of the micro fly-eye lens 8 (the longitudinal direction of the unit wavefront division surface), and the Y direction corresponds to the scanning direction of the wafer W. Scanning orthogonal direction (Y direction on wafer W).

As shown in FIG. 3, a rectangular still exposure region ER having a long side in the Y direction and a short side along the X direction is formed on the wafer W in a manner corresponding to the still exposure region ER. A rectangular illumination region (not shown) is formed on the mask M. Here, the four-pole pupil intensity distribution formed by the light incident at one point in the static exposure region ER on the illumination pupil does not depend on the position of the incident point, but has substantially the same shape as each other. However, the light intensity of each of the surface light sources constituting the quadrupole pupil intensity distribution tends to be different depending on the position of the incident point.

Specifically, as shown in FIG. 4, in the case of the quadrupole pupil intensity distribution 21 formed by the light incident on the center point P1 in the still exposure region ER, there is a tendency that the Y direction is The light intensity of the surface light sources 21c and 21d spaced apart from each other is larger than the light intensity of the surface light sources 21a and 21b spaced apart in the X direction. On the other hand, as shown in FIG. 5, the quadrupole pupil intensity distribution 22 formed by the light from the center point P1 in the still exposure region ER to the peripheral points P2 and P3 spaced apart in the Y direction is formed. In other cases, there is a tendency that the light intensity of the surface light sources 22c and 22d spaced apart in the Y direction is smaller than the light intensity of the surface light sources 22a and 22b spaced apart in the X direction.

In general, regardless of the outer shape of the pupil intensity distribution formed in the illumination pupil, the pupil intensity distribution associated with the center point P1 in the still exposure region ER on the wafer W (the light incident on the center point P1 is The light intensity distribution along the Y direction (scanning orthogonal direction) of the pupil intensity distribution formed on the illumination pupil is as shown in FIG. 6(a), and has a concave curve which is smallest at the center and increases toward the periphery. Distribution of shapes. On the other hand, the light intensity distribution along the Y direction of the pupil intensity distribution associated with the peripheral points P2, P3 in the still exposure region ER on the wafer W is as shown in FIG. 6(b), which has a central The convex curve-like distribution that is largest and decreases toward the periphery.

Further, the light intensity distribution along the Y direction of the pupil intensity distribution has a tendency to depend on the position of the incident point along the X direction (scanning direction) in the still exposure region ER, but depends on The position of the incident point along the Y direction (scanning orthogonal direction) in the still exposure region ER changes. As such, when the pupil intensity distribution (the intensity distribution of the pupils incident on the illumination pupils) of the points in the static exposure region ER on the wafer W is substantially non-uniform, respectively, At each position on the wafer W, the line width of the pattern is not uniform, and the fine pattern of the mask M cannot be faithfully transferred onto the wafer W over the entire exposure area with the expected line width.

In the first embodiment, as described above, the density filter 5 having the transmittance distribution in which the transmittance in the transmittance distribution is disposed in the vicinity of the pupil position of the afocal lens 4 or the vicinity of the pupil position It differs depending on the incident position of the light. Further, the pupil position of the afocal lens 4 is optically conjugate with the incident surface of the micro fly's eye lens 8 by the rear lens group 4b of the afocal lens 4 and the zoom lens 7. Therefore, the light intensity distribution formed on the incident surface of the micro fly-eye lens 8 is adjusted (corrected) by the action of the density filter 5, and is also formed on the rear focal plane formed on the micro fly's eye lens 8, or thereafter. The pupil intensity distribution of the illumination pupil in the vicinity of the side focal plane is adjusted.

Among them, the density filter 5 uniformly adjusts the pupil intensity distribution associated with each point in the static exposure area ER on the wafer W, and does not depend on the position of each point. As a result, by the action of the density filter 5, for example, the quadrupole pupil intensity distribution 21 associated with the center point P1 can be adjusted to be substantially uniform, and the light intensities of the surface light sources 21a to 21d can be adjusted to each other. In this case, the difference in light intensity between the surface light sources 22a and 22b and the surface light sources 22c and 22d of the quadrupole pupil intensity distribution 22 of the peripheral points P2 and P3 is rather large.

That is, in order to adjust the pupil intensity distribution associated with each point in the still exposure region ER on the wafer W to be substantially uniform by the action of the density filter 5, it is necessary to pass the density filter 5 Other mechanisms are used to adjust the pupil intensity distribution associated with each point to the distribution of the same traits. Specifically, for example, in the pupil intensity distribution 21 associated with the center point P1 and the pupil intensity distribution 22 associated with the peripheral points P2, P3, it is necessary to make the light intensity of the surface light sources 21a, 21b and the surface light sources 21c, 21d The magnitude relationship and the magnitude relationship of the light intensities of the surface light sources 22a and 22b and the surface light sources 22c and 22d coincide at substantially the same ratio.

In the first embodiment, in order to substantially match the properties of the pupil intensity distribution relating to the center point P1 and the properties of the pupil intensity distribution associated with the peripheral points P2 and P3, correction is provided as the adjustment mechanism. The unit 9, the correction unit 9 is adjusted such that in the pupil intensity distribution 22 associated with the peripheral points P2, P3, the light intensity of the surface light sources 22a, 22b is smaller than the light intensity of the surface light sources 22c, 22d. As shown in FIGS. 7 and 8, the correction unit 9 includes a pair of translucent substrates 91 and 92 having a predetermined thickness along the optical axis AX (corresponding to the Z direction). Each of the substrates 91 and 92 has, for example, a form of a parallel plane plate formed of an optical material such as quartz or fluorite.

The first substrate 91 has, for example, a circular outer shape centering on the optical axis AX, and the position of the first substrate 91 is fixed in a posture in which the incident surface 91a is orthogonal to the optical axis AX. The second substrate 92 is disposed on the rear side (the mask side) of the first substrate 91 and has a circular outer shape centered on the optical axis AX. Moreover, the second substrate 92 can move in the optical axis AX direction (Z direction) while maintaining the posture of the incident surface 92a of the second substrate 92 orthogonal to the optical axis AX. The correction unit 9 moves the second substrate 92 in the optical axis AX direction based on an instruction from the drive control system 99. Further, the position of the second substrate 92 may be fixed, and the first substrate 91 may be moved in the optical axis AX direction or both of the substrates 91 and 92 may be moved in the optical axis AX direction.

Referring to Fig. 9, on the emitting surface 91b of the substrate 91 and the incident surface 92a of the substrate 92, light-shielding dots 51a and 51b and light-shielding dots 52a having the same outer shape and the same size are formed in accordance with a predetermined distribution. 52b. Here, each of the light-blocking points 51a, 51b, 52a, and 52b as the unit extinction region is formed of, for example, chromium or chromium oxide. Further, the light-shielding dots 52a are formed in a one-to-one correspondence with the light-shielding dots 51a, and the light-shielding dots 52b are formed in a one-to-one correspondence with the light-shielding dots 51b.

Here, a group of light-blocking dots 51a and a group of light-blocking dots 52a are arranged to act on light from the surface light source 20a, and a group of light-shielding dots 51b and a group of light-shielding dots 52b are arranged to act on light from the surface light source 20b. . In Fig. 9, in order to clarify the drawings, only a pair of light-shielding dots 51a and 51b formed on the emitting surface 91b of the substrate 91 and a pair of light-shielding dots 52a formed on the incident surface 92a of the substrate 92 are shown. And 52b.

Hereinafter, in order to make the description easy to understand, each of the light-shielding dots 51a, 51b, 52a, and 52b has a circular outer shape, and the light-shielding points 51a and 52a overlap each other from the optical axis AX direction, and are observed from the optical axis AX direction. The light blocking spots 51b and 52b coincide with each other. Moreover, in order to make the description easy to understand, the operation of the correction unit 9 will be described focusing only on the pair of light-blocking dots 51a and 51b of the substrate 91 and the pair of light-blocking points 52a and 52b of the substrate 92.

In the reference state (reference position) along the optical axis AX direction of the second substrate 92, light parallel to the optical axis AX is incident on a combined extinction region composed of a combination of circular shading points 51a and 52a. On the surface parallel to the emission surface 92b immediately behind the correction unit 9, as shown on the left side of FIG. 10(a), the region 51aa which is surrounded by the circular shading point 51a and the circular shading point 52a The matted regions 52aa coincide with each other. That is, the circular matte regions 51aa and 52aa form a matte region having an area corresponding to one circular extinction region 51aa, directly behind the correction unit 9.

When the light parallel to the optical axis AX is incident on the correction unit 9, even if the second substrate 92 moves from the reference state to the +Z direction, the interval between the substrate 91 and the substrate 92 in the optical axis AX direction is increased, and the light shielding property is further improved. The interval between the point 51a and the light-shielding point 52a in the optical axis AX direction becomes large, and as shown on the right side of FIG. 10(a), the extinction areas 51aa and 52aa also remain superposed without change. In the same manner, when the light parallel to the optical axis AX is incident, even if the second substrate 92 is moved from the reference state to the -Z direction, the interval between the light-shielding point 51a and the light-shielding point 52a is reduced, and the illustration is omitted. However, the extinction areas 51aa and 52aa will remain coincident without change.

In the reference state of the second substrate 92 along the optical axis AX direction, when incident on the angle formed by the light in the combined extinction region composed of the combination of the circular light-shielding dots 51a and 52a with respect to the optical axis AX, For example, monotonically increasing from 0 degrees along the YZ plane, immediately behind the correction unit 9, as shown on the left side of FIG. 10(b), the extinction areas 51aa and 52aa move only in different distances from each other in the Z direction, and the extinction area The area where 51aa and 52aa coincide is monotonously decreasing. As a result, in the state shown on the left side of FIG. 10(b), the circular-shaped extinction regions 51aa and 52aa correspond to the area of the coincidence region, and a matte region having an area larger than that with a circle is formed. The shape of the matte region 51aa is equivalent to an area smaller than the area of the two circular matte regions 51aa.

When the second substrate 92 is moved in the +Z direction from the state shown on the left side of FIG. 10(b), the interval between the light-shielding points 51a and 52a is monotonously increased, and as shown on the right side of FIG. 10(b), the extinction is performed. The overlapping areas of the areas 51aa and 52aa are monotonously decreasing, and the areas of the extinction areas formed by the extinction areas 51aa and 52aa are monotonously increasing. Further, when the second substrate 92 is moved in the -Z direction from the state shown on the left side of FIG. 10(b), and the interval between the light-shielding points 51a and 52a is monotonously decreased, the matte region 51aa is omitted although not shown. The overlap area with 52aa is still monotonously increasing, and the area of the extinction area formed by the extinction areas 51aa and 52aa monotonously decreases.

As described above, in the correction unit 9, when the interval between the substrates 91 and 92 in the optical axis AX direction is fixed, the combined extinction region composed of the circular shading points 51a and 52a exhibits the following extinction effect: The incident angle of the light on the first substrate 91 is increased, and the extinction ratio is increased. By comparing the left side of FIG. 11(a) with the left side of FIG. 11(b), and comparing the right side of FIG. 11(a) with the right side of FIG. 11(b). The above situation can be understood. Similarly, when the interval between the substrates 91 and 92 in the optical axis AX direction is fixed, the combined extinction region composed of the circular shading points 51b and 52b also exhibits the following extinction effect: that is, with the light The incident angle of the substrate 91 is increased, and the extinction ratio is increased.

Further, in the correction unit 9, when the incident angle of the light to the first substrate 91 is 0 degrees, that is, when the light parallel to the optical axis AX is incident, the combination of the circular shading points 51a and 52a is formed. The extinction region exerts a fixed extinction effect, that is, the extinction ratio does not change regardless of the change in the interval of the substrates 91 and 92 in the optical axis AX direction, and the extinction ratio is relatively small. The above situation can be understood by comparing the diagram on the left side of Fig. 11(a) with the diagram on the right side of Fig. 11(a). Similarly, when light parallel to the optical axis AX is incident, the combined extinction region composed of the circular-shaped light-shielding points 51b and 52b exerts a relatively small fixed extinction effect regardless of the change in the interval between the substrates 91 and 92.

Further, in the correction unit 9, when the incident angle of the light to the first substrate 91 is fixed (the incident angle is a predetermined value other than 0 degrees), the combined extinction region composed of the circular shading points 51a and 52a is formed. The matting action is performed such that the interval between the substrates 91 and 92 in the optical axis AX direction increases, and the extinction ratio increases. The above situation can be understood by comparing the diagram on the left side of FIG. 11(b) with the diagram on the right side of FIG. 11(b). Similarly, in the correction unit 9, when the incident angle of light to the first substrate 91 is fixed, the combined extinction region composed of the circular shading points 51b and 52b also exhibits the following extinction effect: The interval between the substrates 91 and 92 in the optical axis AX direction is increased, and the extinction ratio is increased.

In the first embodiment, the first substrate 91 and the second substrate 92 are relatively movable in the optical axis AX direction. Further, the correcting means 9 illuminates the pair of surface light sources 20a and 20b which are spaced apart from each other in the X-direction pupil intensity distribution 20 and which are spaced apart in the X direction (the short-side direction of the unit wavefront splitting surface). It does not act on the light from the pair of surface light sources 20c and 20d which are spaced apart from each other in the Y direction (the longitudinal direction of the unit wavefront division surface) from the optical axis AX.

Here, referring to FIG. 12, the light reaching the center point P1 in the static exposure area ER on the wafer W, that is, the light reaching the center point P1' of the opening portion of the mask mask 11 is 0 degree. The correction unit 9 is incident on the correction unit 9 (that is, on the first substrate 91). In other words, the light from the surface light sources 21a and 21b of the pupil intensity distribution 21 related to the center point P1 is incident on the first substrate 91 at an incident angle of 0 degrees.

On the other hand, as shown in FIG. 13, the light reaching the peripheral points P2, P3 in the still exposure region ER on the wafer W, that is, the peripheral points P2', P3 reaching the opening portion of the mask mask 11 The light of ' is incident on the correction unit 9 at a relatively large incident angle ± θ. In other words, the light from the surface light sources 22a and 22b of the pupil intensity distribution 22 associated with the peripheral points P2 and P3 is incident on the first substrate 91 at a relatively large incident angle ±θ.

Further, in Fig. 12 and Fig. 13, reference numeral B1 denotes a point along the outermost edge of the surface light source 20a (21a, 22a) along the X direction, and reference symbol B2 denotes a along the surface light source 20b (21b, 22b). The outermost point of the X direction. Moreover, in order to make the description related to FIGS. 12 and 13 easy to understand, the point along the outermost edge of the surface light source 20c (21c, 22c) along the Z direction is indicated by reference numeral B3 (please refer to FIG. 2 and the like), and A point along the outermost edge of the surface light source 20d (21d, 22d) along the Z direction is indicated by reference numeral B4 (please refer to FIG. 2 and the like). However, as described above, the light from the surface light sources 20c (21c, 22c) and the surface light sources 20d (21d, 22d) is not affected by the correction unit 9.

As described above, in the pupil intensity distribution 21 associated with the center point P1, the light from the surface light sources 21a and 21b is subjected to the extinction action of the correction unit 9, but the degree of reduction in the light intensity of these lights is relatively small. The light from the surface light sources 21c and 21d is not subjected to the extinction of the correction unit 9, and therefore the light intensity of these lights does not change. As a result, as shown in FIG. 14, the pupil intensity distribution 21 associated with the center point P1 is adjusted only to the pupil intensity distribution 21' of substantially the same property as the original distribution 21 even if it is subjected to the extinction action of the correction unit 9. . That is, the pupil intensity distribution 21' adjusted by the correction unit 9 also maintains a property that the light intensity of the surface light sources 21c and 21d spaced apart in the Y direction is smaller than the plane spaced apart in the X direction. The light sources 21a', 21b' have a higher light intensity.

On the other hand, in the pupil intensity distribution 22 associated with the peripheral points P2 and P3, the light from the surface light sources 22a and 22b is subjected to the extinction action of the correction unit 9, and the light intensity of these lights is largely lowered. Here, the degree of decrease in the intensity of light from the surface light sources 22a and 22b can be adjusted by changing the interval between the substrates 91 and 92 in the correction unit 9. On the other hand, the light from the surface light sources 22c and 22d is not subjected to the extinction action of the correction unit 9, and therefore the light intensity of these lights does not change. As a result, as shown in FIG. 15, the pupil intensity distribution 22 associated with the peripheral points P2, P3 is adjusted to the pupil intensity distribution 22' of a different property from the original distribution 22 by the extinction action of the correction unit 9. That is, the pupil intensity distribution 22' adjusted by the correction unit 9 is changed to a property that the light intensity of the surface light sources 22c and 22d spaced apart in the Y direction is smaller than the plane spaced apart in the X direction. The light sources 22a', 22b' have a greater light intensity.

Thus, by the extinction action of the correction unit 9, the pupil intensity distribution 22 associated with the peripheral points P2, P3 is adjusted to a distribution 22' having substantially the same properties as the pupil intensity distribution 21' of the center point P1. Similarly, the pupil intensity distribution of each point arranged in the Y direction between the center point P1 and the peripheral points P2 and P3, and the light associated with each point in the still exposure area ER on the wafer W will be further The 瞳 intensity distribution is also adjusted to have a distribution of properties substantially the same as the pupil intensity distribution 21' with respect to the center point P1. In other words, by the extinction action of the correction unit 9, the pupil intensity distribution associated with each point in the still exposure region ER on the wafer W is adjusted to have a distribution of substantially the same nature. When expressed in other ways, the correction unit 9 has an extinction rate characteristic necessary for adjusting the pupil intensity distribution associated with each point to a distribution having substantially the same property.

As described above, in the correction unit 9 of the first embodiment, a plurality of circular shading points 51a and 51b are formed on the emission surface 91b of the first substrate 91 as a first matte pattern in accordance with a predetermined distribution. . Further, as the second matte pattern, a plurality of circular shading points 52a and 52b are formed on the incident surface of the second substrate 92 so as to correspond to the plurality of light-blocking dots 51a and 51b, respectively. The circular-shaped light-shielding points 51a and 52a have the same size as each other, and the light-shielding points 51a and 52a overlap each other as viewed from the optical axis AX direction. Similarly, the circular shading points 51b and 52b have the same size as each other, and the shading points 51b and 52b overlap each other as viewed from the optical axis AX direction.

Further, the first substrate 91 and the second substrate 92 are relatively movable in the optical axis AX direction. Therefore, the combined extinction region composed of the circular shading points 51a and 52a and the combined extinction region composed of the circular shading points 51b and 52b are played by the so-called parallax effect as follows The extinction effect: that is, the extinction rate monotonically increases as the incident angle of the light becomes larger, and the extinction ratio monotonically increases as the interval between the substrates 91 and 92 becomes larger. However, when the incident angle of light is 0 degrees, the extinction ratio is fixed and does not depend on the change in the interval between the substrates 91 and 92.

In this way, the correction unit 9 is configured to change the interval between the first substrate 91 and the second substrate 92 (generally, the change in the relative position) and the change in the incident angle of the light incident on the first substrate 91. The extinction ratios generated by the first matte patterns (51a, 51b) and the second extinction patterns (52a, 52b) are changed. Further, the correction unit 9 is disposed at a position in the vicinity of the illumination pupil, that is, a position on the mask M (or the wafer W) that is the illuminated surface, and converts the positional information of the light into the angle information of the light. Therefore, according to the extinction action of the correction unit 9 of the first embodiment, the pupil intensity distributions associated with the respective points on the illuminated surface can be independently adjusted, and the pupil intensity distribution associated with each point can be further adjusted. Adjust to a distribution of approximately the same traits to each other.

Further, in the illumination optical system (2 to 12) of the first embodiment, the pupil intensity distribution associated with each point can be adjusted to be substantially uniform by the synergistic action of the correction unit 9 and the density filter 5, respectively. The correction unit 9 independently adjusts the pupil intensity distributions associated with the respective points in the still exposure region ER on the wafer W, and the density filter 5 collectively pairs the apertures associated with the respective points. The intensity distribution is adjusted. Therefore, in the exposure apparatus (2 to WS) of the first embodiment, an illumination optical system in which the pupil intensity distribution at each point in the static exposure region ER on the wafer W is adjusted to be substantially uniform can be used (2). ～12), good exposure can be performed under appropriate illumination conditions corresponding to the fine pattern of the mask M, and the desired line width can be faithfully transferred to the entire exposed area of the mask M to the entire exposure area. Wafer W.

In the first embodiment, the pupil intensity distribution associated with each point in the still exposure region ER is adjusted to be substantially uniform, and the pupil intensity distribution associated with each point is generally adjusted to a desired distribution. The operation is performed, for example, based on a measurement result of a pupil intensity distribution measuring device (not shown) that is based on the light passing through the projection optical system PL on the pupil plane of the projection optical system PL. The pupil intensity distribution is measured. For example, the pupil intensity distribution measuring device includes a charge coupled device (CCD) photographing unit having a photographing surface disposed at a position where the pupil position of the projection optical system PL is optically conjugated, and the pair of projection optics The pupil intensity distribution (the pupil intensity distribution formed on the pupil plane of the projection optical system PL) at each point on the image plane of the system PL is monitored. For the detailed configuration and action of the diaphragm intensity distribution measuring device, reference is made to US Patent Publication No. 2008/0030707 and the like.

Specifically, the measurement result of the pupil intensity distribution measuring device is supplied to a control unit (not shown). The control unit outputs a command to the drive control system 99 of the correction unit 9 based on the measurement result of the pupil intensity distribution measuring device so that the pupil intensity distribution on the pupil plane of the projection optical system PL becomes a desired distribution. The drive control system 99 controls the Z-direction position of the second substrate 92 based on an instruction from the control unit to adjust the pupil intensity distribution associated with each point in the still exposure region ER on the wafer W to a desired level. distributed.

In the first embodiment, it is considered that the light amount distribution on the wafer (irradiated surface) W is affected by, for example, the matting action (adjustment action) of the correction unit 9. In this case, the illuminance distribution in the still exposure region ER or the shape of the still exposure region (illumination region) ER can be changed by the action of the light amount distribution adjustment unit having a known configuration as needed. Specifically, the light quantity distribution adjusting unit that changes the contrast distribution can use Japanese Patent Laid-Open No. 2001-313250 and Japanese Patent Laid-Open No. 2002-100561 (and US Patent Nos. 6,771,350 and 6,927,836 corresponding to these patents). The composition and method disclosed in the ). In addition, as a light quantity distribution adjustment unit that changes the shape of the illumination area, the composition disclosed in the pamphlet of the International Patent Publication No. WO2005/048326 (and the US Patent Publication No. 2007/0014112 corresponding to the pamphlet) can be used. And methods.

Further, in the above-described first embodiment, according to a specific embodiment shown in FIGS. 7 to 9, a pair of substrates 91 and 92 having a parallel plane plate disposed perpendicular to the optical axis AX are formed. Correction unit 9. Further, circular light-shielding dots 51a and 51b as the first matte pattern are distributed on the emission surface 91b of the first substrate 91, and a second extinction pattern is formed on the incident surface 92a of the second substrate 92. Round-shaped light-shielding dots 52a and 52b. However, the present invention is not limited thereto, and the specific configuration of the correction unit 9 may be in various forms.

For example, the form (outer shape and the like) of the substrate constituting the correction unit 9, the posture of the substrate, the number of unit extinction regions forming the respective extinction patterns, the shape of the unit extinction region, and the position of the formation surface of the unit extinction region (incident surface or injection) The surface), the form of the distribution of the unit extinction area, the arrangement position of the correction unit 9, and the like may be various forms. Specifically, in the above-described first embodiment, as the light-transmitting substrates 91 and 92, for example, a substrate having at least one of the surfaces having a curvature can be used.

Further, in the first embodiment described above, the pair of substrates 91 and 92 are relatively movable in the optical axis AX direction. However, the present invention is not limited thereto, and a correction unit that functions as the correction unit 9 of the first embodiment described above may be configured by a pair of substrates that are relatively rotatable about the optical axis AX. Referring to Fig. 16, the correction unit 9A according to the modification of the first embodiment includes a pair of translucent substrates 93 and 94 having a predetermined thickness along the optical axis AX. Each of the substrates 93 and 94 has, for example, a form of a parallel plane plate formed of an optical material such as quartz or fluorite.

The first substrate 93 has, for example, a circular outer shape centering on the optical axis AX, and is configured to be rotatable around the optical axis AX while maintaining the posture of the incident surface 93a of the first substrate 93 orthogonal to the optical axis AX. The second substrate 94 is disposed on the rear side of the first substrate 93, and the second substrate 94 has, for example, a circular outer shape centering on the optical axis AX. Further, the second substrate 94 is configured to be rotatable around the optical axis AX while maintaining the posture of the incident surface 94a of the second substrate 94 orthogonal to the optical axis AX. In the correction unit 9A, the first substrate 93 and the second substrate 94 are rotated around the optical axis AX based on an instruction from the drive control system 99A.

As shown in Fig. 17 (a), a plurality of light-shielding linear regions 53a and a plurality of light-shielding members are arranged on the emission surface 93b of the substrate 93 in the circumferential direction of a circle centered on the optical axis AX. Linear region 53b. Further, as shown in FIG. 17(b), a plurality of light-shielding linear regions 54a and a plurality of light-shielding lines arranged in the circumferential direction of a circle centered on the optical axis AX are formed on the incident surface 94a of the substrate 94. Sexual linear region 54b. In addition, in FIG. 17(a), in order to make the description easy to understand, the case where the exit surface 93b seen is seen from the side of the incident surface 93a of the substrate 93 in the direction of the optical axis AX is shown. Each of the linear regions 53a, 53b, 54a, 54b as the unit extinction region is formed of, for example, chromium or chromium oxide. Further, the linear regions 54a are distributed so as to correspond to the linear regions 53a one by one, and the linear regions 54b are distributed so as to correspond to the linear regions 53b one by one.

Hereinafter, in order to make the explanation easy to understand, the linear regions 53a, 53b, 54a, 54b have the same shape and size, and are arranged equiangularly along the circumferential direction of a circle centered on the optical axis AX, and from the optical axis AX. It extends radially at intervals. Further, at the reference rotational position of the first substrate 93, a group of linear regions 53a are located within an angular range of 90 degrees between the +X axis and the +Y axis, and a group of linear regions 53b are located between the -X axis and the -Y axis. The range of angles. On the other hand, at the reference rotational position of the second substrate 94, a group of linear regions 54a are located within an angular range between the +X axis and the -Y axis, and a group of linear regions 54b are located between the -X axis and the +Y axis. Within the range of angles.

In the reference state (reference rotational position) of the substrates 93 and 94, as shown in FIG. 18, when viewed from the optical axis AX direction, a group of linear regions 53a, 53b, 54a, 54b do not coincide with each other but along the circumferential direction. Separated intervals. Therefore, the light from the surface light sources 20a to 20d does not depend on the incident angle toward the correction unit 9A (and further the substrate 93), but is uniformly subjected to the extinction by the linear regions 53a, 53b, 54a, and 54b. In other words, in the reference state of the substrates 93 and 94, the so-called parallax effect is not exhibited, and the matting action of the linear regions 53a, 53b, 54a, 54b is fixed.

When the substrate 93 is rotated from the reference state of FIG. 18 by a predetermined angle in the counterclockwise direction in FIG. 18, and the substrate 94 is rotated from the reference state of FIG. 18 by a predetermined angle in the clockwise direction in FIG. Then, a state can be obtained in which, as shown by a thick line in FIG. 19, for example, when viewed from the optical axis AX direction, the three linear regions 53a and the three linear regions 54a coincide with each other, and the direction from the optical axis AX When observed, the three linear regions 53b and the three linear regions 54b coincide with each other. In the state shown in Fig. 19, the combined extinction region 55a composed of three linear regions 53a and 54a overlapping each other, and the combined extinction region 55b composed of three linear regions 53b and 54b overlapping each other are used. The so-called parallax effect exerts an extinction action that monotonically increases the extinction ratio as the incident angle of light increases. Here, three combined extinction regions 55a composed of linear regions 53a and 54a act on the light from the surface light source 20a, and three combined extinction regions 55b composed of the linear regions 53b and 54b are from the surface light source 20b. The light works.

Further, when the substrate 93 is rotated from the state shown in FIG. 19 by a predetermined angle in the counterclockwise direction in FIG. 18, and the substrate 94 is brought from the state shown in FIG. 19, it is clockwise in FIG. When only the predetermined angle is rotated, the following state can be obtained: that is, as shown by a thick line in FIG. 20, for example, when viewed from the optical axis AX direction, the five linear regions 53a and the five linear regions 54a coincide with each other, and The five linear regions 53b and the five linear regions 54b coincide with each other when viewed from the optical axis AX direction. That is, the overlapping regions 55a and 55b in which the linear regions 53a, 53b, 54a, and 54b are overlapped when viewed from the optical axis AX direction are further increased than the state shown in FIG. In the state shown in Fig. 20, five combined extinction regions 55a composed of linear regions 53a and 54a and five combined extinction regions 55b composed of linear regions 53b and 54b function to make the extinction rate follow the light. The incident angle becomes larger and the monotonically increasing extinction effect.

In the correction unit 9A, the first matte pattern (53a, 53b) and the first matte pattern are observed from the direction of the optical axis AX in accordance with the change in the relative rotational position of the first substrate 93 and the second substrate 94 around the optical axis AX. The size of the overlapping regions 55a and 55b in which the two matte patterns (54a, 54b) are superposed changes. The correction unit 9A performs a matting action in which the overlapping area 55a of the first matte patterns (53a, 53b) and the second extinction patterns (54a, 54b) is fixed when the incident angle of the light to the first substrate 93 is fixed. 55b becomes larger and the extinction rate increases.

In the correction unit 9A, the first extinction pattern is changed by the change in the relative position of the first substrate 93 and the second substrate 94 around the optical axis AX and the change in the incident angle of the light incident on the first substrate 93. The extinction ratios generated by (53a, 53b) and the second extinction patterns (54a, 54b) change. Therefore, similarly to the case of the first embodiment described above, the light associated with each point in the still exposure region ER on the wafer W can be independently independently caused by the matting action of the correction unit 9A of the modification of Fig. 16 . The 瞳 intensity distribution is adjusted separately, and the pupil intensity distribution associated with each point can be adjusted to have a distribution of substantially the same nature.

Furthermore, in the modification of FIG. 16, the two substrates of the substrates 93 and 94 are rotated about the optical axis AX, but the invention is not limited thereto, and at least one of the substrates 93 and 94 may be surrounded by the optical axis. AX is rotated to form a correction unit. Further, in the modification of Fig. 16, the correction unit is configured by a pair of substrates 93 and 94 having a parallel plane plate disposed perpendicular to the optical axis AX, according to a specific embodiment shown in Figs. 16 and 17 9A. However, the present invention is not limited thereto, and the specific configuration of the correction unit 9A may be in various forms.

For example, the form (outer shape and the like) of the substrate constituting the correction unit 9A, the posture of the substrate, the number of unit extinction regions forming the respective matte patterns, the shape of the unit extinction region, and the position of the formation surface of the unit extinction region (incident surface or emission) The surface), the form of the distribution of the unit extinction area, the arrangement position of the correction unit 9A, and the like may be various forms. Specifically, in the modification of FIG. 16 , as the light-transmitting substrates 93 and 94 , for example, a substrate having at least one surface having a curvature can be used.

Further, in the modification of Fig. 16, the pair of substrates 93 and 94 are relatively rotatable about the optical axis AX. However, the present invention is not limited thereto, and may be a pair of substrates that are relatively movable in a direction transverse to the optical axis AX (typically, an arbitrary direction along the XY plane orthogonal to the optical axis AX) In addition, a correction unit that functions in the same manner as the correction unit 9A of the modification of FIG. 16 is configured. In this case, it is important that the first matte pattern coincides with the second extinction pattern when viewed from the optical axis direction in accordance with the change in the relative position of the first substrate and the second substrate in the direction transverse to the optical axis. The size of the resulting repeating region changes.

Further, in the first embodiment and the modification of the first embodiment, the pupil intensity distribution 20 formed on the illumination pupil near the rear focal plane or the rear focal plane of the micro fly-eye lens 8 The correction unit 9 (9A) is disposed at the rear side (mask side) of the formation surface. However, the present invention is not limited thereto, and the correction unit 9 (9A) may be disposed at a position on the formation surface of the pupil intensity distribution 20 or on the front side (light source side) of the formation surface. Further, the correction unit 9 (9A) may be disposed at a position of another illumination pupil on the rear side of the micro fly-eye lens 8 or in the vicinity of the illumination pupil, for example, disposed on the front lens group 12a of the imaging optical system 12 and The position of the illumination pupil between the rear lens group 12b or the vicinity of the illumination pupil.

In general, the correction unit according to the first aspect of the present invention for correcting the pupil intensity distribution formed in the illumination pupil includes a translucent first substrate and has a magnification adjacent to the front side of the illumination pupil ( The optical element of the power is in an illumination pupil space between the optical element having a magnification adjacent to the rear side of the illumination pupil, and the translucent first substrate has a predetermined thickness along the optical axis; The translucent second substrate is disposed at a position on the rear side of the first substrate in the illumination pupil space, and the translucent second substrate has a predetermined thickness along the optical axis. A first matte pattern is formed on the first substrate, and a second matte pattern corresponding to the first matte pattern is formed on the second substrate. The relative position of the first matte pattern and the second matte pattern can be changed. That is, at least one of the first substrate and the second substrate can be moved in a predetermined direction or can be rotated around a predetermined axis. Furthermore, in the "illumination pupil space", there may be a parallel plane plate or a plane mirror having no magnification.

Moreover, in the modification of the first embodiment and the first embodiment, the unit extinction region forming the matte pattern of the substrate is formed as a light-shielding region, and the light-shielding region is formed by, for example, chrome or chromium oxide. Click to block the incident light. However, the present invention is not limited thereto, and the unit matte region may be in a form other than the form of the light-shielding region. For example, at least one of the plurality of extinction patterns may be formed as a scattering region that scatters incident light or as a diffraction region that diffracts incident light. In general, a scattering region is formed by performing roughening processing on a desired region of a light-transmitting substrate, and a diffraction region is formed by performing a diffraction surface forming process on a desired region.

FIG. 21 is a view schematically showing a configuration of an exposure apparatus according to a second embodiment of the present invention. In FIG. 21, the normal direction of the exposure surface (transfer surface) of the wafer W, which is a photosensitive substrate, is set to the Z axis, and the direction parallel to the paper surface of FIG. 21 in the exposure surface of the wafer W is set. When set to the Y axis, the direction perpendicular to the paper surface of FIG. 21 in the exposure surface of the wafer W is set to the X axis. The second embodiment has a configuration similar to that of the first embodiment, but in particular, the configuration of the correction unit 19 is different from that of the first embodiment.

More specifically, in the first embodiment, the density filter 5 and the conical prism mirror system 6 are disposed in the vicinity of the pupil position of the afocal lens 4 or the pupil position, but in the second embodiment, Since the density filter 5 is not provided, the density filter 5 is not provided, and a conical cylindrical mirror system can be provided as needed. However, in the second embodiment, the arrangement of the conical prism system is omitted. In FIG. 21, components having the same functions as those of the first embodiment of FIG. 1 are denoted by the same reference numerals as those in FIG. 1. In the following, the configuration and operation of the second embodiment will be described with a focus on differences from the first embodiment, and the description overlapping with the first embodiment will be omitted.

In the exposure apparatus of the second embodiment, the light emitted from the light source 1 enters the afocal lens 4 via the shaping optical system 2 and the diffractive optical element 3 for the ring illumination. The light that has passed through the afocal lens 4 is incident on the micro fly's eye lens 8 via the predetermined surface IP and the zoom lens 7. The light beam incident on the micro fly's eye lens 8 is two-dimensionally divided, and an annular band centered on the optical axis AX is formed on the illumination pupil near the rear focal plane or the rear focal plane of the micro fly-eye lens 8. A secondary light source (a pupil intensity distribution) composed of a substantial surface light source. A correction unit 19 is disposed in the vicinity of the rear focal plane or the rear focal plane of the micro fly-eye lens 8. The configuration and function of the correction unit 19 will be described later.

The light that has passed through the micro fly's eye lens 8 and the correction unit 19 is superimposed and illuminated by the concentrating optical system 10, the reticle 11 and the imaging optical system 12. The light that has passed through the pattern area of the mask M forms an image of the mask pattern on the wafer W via the projection optical system PL. In this manner, according to the step-and-scan method, the mask M and the wafer W are moved (scanned) in synchronization along the X direction (scanning direction), thereby scanning and exposing the mask pattern to the photographing area of the wafer W (exposure area) ).

In the following description, in order to make the effect of the second embodiment easy to understand, a quadrupole as shown in FIG. 22 is formed on the illumination pupil of the rear focus surface of the micro fly-eye lens 8 or the vicinity of the rear focus surface. A pupil intensity distribution (secondary light source) 30. The correction unit 19 is disposed directly behind the formation surface of the quadrupole pupil intensity distribution 30. In the following description, in the case of only the "illumination pupil", the "illumination pupil" refers to the illumination pupil of the rear focus surface of the micro fly-eye lens 8 or the vicinity of the rear focus surface.

Referring to FIG. 22, the quadrupole pupil intensity distribution 30 formed in the illumination pupil includes a pair of arc-shaped substantial surface light sources 30a, 30b that are sandwiched by the optical axis AX and spaced apart in the X direction; And a pair of arc-shaped substantial surface light sources (hereinafter simply referred to as "surface light sources") 30c and 30d which are spaced apart in the Z direction by the optical axis AX. Further, the X direction on the illumination pupil is the short-side direction of the rectangular microlens of the micro fly-eye lens 8 (that is, the short-side direction of the unit wavefront division plane), and the X direction corresponds to the scanning direction of the wafer W. . Further, the Z direction on the illumination pupil is the longitudinal direction of the rectangular microlens of the micro fly-eye lens 8 (that is, the longitudinal direction of the unit wavefront division surface), and the Z direction corresponds to the scanning direction of the wafer W. Orthogonal scanning orthogonal direction (Y direction on wafer W).

As shown in FIG. 3 referred to in the description of the first embodiment, a rectangular static exposure region ER having a long side in the Y direction and a short side along the X direction is formed on the wafer W. In a manner corresponding to the still exposure region ER, a rectangular illumination region (not shown) is formed on the mask M. Here, the four-pole pupil intensity distribution formed by the light incident on one point in the stationary exposure region ER on the illumination pupil has substantially the same shape and does not depend on the position of the incident point. However, the light intensity of each of the surface light sources constituting the quadrupole pupil intensity distribution may differ depending on the position of the incident point.

As a relatively simple example, a case is considered in which the light incident on the peripheral points P2 and P3 in the static exposure region ER on the illumination pupil forms the quadrupoles schematically shown in FIGS. 23 and 24, respectively. The intensity distribution of the pupil. That is, as shown in FIG. 23, in the quadrupole pupil intensity distribution 32 formed by the light from the center point P1 in the still exposure region ER to the peripheral point P2 spaced apart in the +Y direction, the surface The light intensities of the light sources 32a, 32b, and 32d are substantially equal to each other, and the light intensity of the surface light source 32c is greater than the light intensity of the other surface light sources.

Further, as shown in FIG. 24, in the quadrupole pupil intensity distribution 33 formed by the light from the center point P1 in the still exposure region ER to the peripheral point P3 spaced apart in the -Y direction, the surface light source The light intensities of 33a, 33b, and 33c are substantially equal to each other, and the light intensity of the surface light source 33d is greater than that of the other surface light sources. As described above, in the pupil intensity distribution relating to each point on the wafer W, the optical axis AX is sandwiched and separated in the Z direction (the direction corresponding to the scanning orthogonal direction (the Y direction on the wafer W)). When the difference in light intensity between the pair of regions in the open interval is too large, there is a pattern of exposure to the imaging region (in the case of the example shown in FIGS. 23 and 24, the position corresponding to the peripheral points P2 and P3) The problem of deviating from the expected position.

In the second embodiment, the correction unit 19 is provided as an adjustment mechanism for adjusting the difference in light intensity, and the difference in light intensity means that among the pupil intensity distributions 32 and 33 associated with the peripheral points P2 and P3, The difference in light intensity between the pair of surface light sources 32c and 32d spaced apart in the Z direction and the pair of surface light sources 33c and 33d sandwiching the optical axis AX. As shown in FIGS. 25 and 26, the correction unit 19 includes three light-transmissive substrates 191, 192, and 193 having a predetermined thickness along the optical axis AX (corresponding to the Y direction). Each of the substrates 191 to 193 has, for example, a form of a parallel plane plate formed of an optical material such as quartz or fluorite.

The first substrate 191 has, for example, a circular outer shape centering on the optical axis AX, and the position of the first substrate 191 is positioned in a posture in which the incident surface 191a of the first substrate 191 is orthogonal to the optical axis AX. The second substrate 192 is disposed on the rear side of the first substrate 191 and has an outer shape corresponding to a region through which the light from the surface light source 30c passes, and has, for example, an outer shape having a fan shape. In addition, the second substrate 192 is configured to move in the Z direction (longitudinal direction of the unit wavefront split surface) while maintaining the posture of the incident surface 192a of the second substrate 192 orthogonal to the optical axis AX.

The third substrate 193 is disposed on the rear side of the first substrate 191 and has an outer shape corresponding to a region through which the light from the surface light source 30d passes, and has, for example, an outer shape having a fan shape. Further, the third substrate 193 is configured to be movable in the Z direction while maintaining the posture of the incident surface 193a of the third substrate 193 orthogonal to the optical axis AX. Hereinafter, in order to simplify the description, the second substrate 192 and the third substrate 193 have a symmetrical structure with respect to the XY plane passing through the optical axis AX, and the incident surface 192a of the second substrate 192 is located at the incident surface 193a of the third substrate 193. On the same side. In the correction unit 19, the second substrate 192 and the third substrate 193 move in the Z direction, respectively, based on an instruction from the drive control system 194.

Referring to Fig. 27, on the emission surface 191b of the substrate 191, the incident surface 192a of the substrate 192, and the incident surface 193a of the substrate 193, light-shielding points having the same outer shape and the same size are formed in accordance with a predetermined distribution. 151, 152 and 153. Here, each of the light-shielding points 151 to 153 as the unit extinction region is formed of, for example, chromium or chromium oxide. Further, the light-shielding dots 151 are distributed so as to correspond to the light-shielding dots 152 and 153 one by one. Here, a group of light-shielding dots 151 are arranged to act on light from the surface light sources 30c and 30d, a group of light-shielding dots 152 are arranged to act on light from the surface light source 30c, and a group of light-shielding dots 153 are arranged in pairs. Light from the surface light source 30d acts.

In FIG. 27, in order to clarify the drawings, only a pair of light-shielding dots 151 formed on the emission surface 191b of the substrate 191, one light-shielding dot 152 formed on the incident surface 192a of the substrate 192, and the like are formed. One light blocking point 153 of the incident surface 193a of the substrate 193. In the following, the light-shielding points 151 to 153 have a circular outer shape, and the light-shielding points 151 and 152 are observed from the optical axis AX direction in the reference state (reference position) of the second substrate 192. Coincide with each other. In the reference state of the third substrate 193, the light blocking dots 151 and 153 overlap each other when viewed from the optical axis AX direction. Moreover, in order to make the description easy to understand, attention is paid only to the pair of light-shielding dots 151 of the substrate 191, one light-shielding dot 152 of the substrate 192, and one light-shielding dot 153 of the substrate 193 to explain the action of the correction unit 19.

In the reference state of the second substrate 192, when the light parallel to the optical axis AX enters the combined extinction region composed of a combination of the circular shading points 151 and 152, the light is parallel to the rear of the correction unit 19. As shown in FIG. 28(a), the surface of the emitting surface 192b overlaps the region 151a that is opaque by the circular opaque point 151 and the region 152a that is opaque with the circular opaque point 152. That is, the circular matte regions 151a and 152a form a matte region having an area corresponding to one circular extinction region 151a directly behind the correction unit 19.

In the reference state of the second substrate 192, the angle of the light incident on the combined extinction region composed of the circular shading points 151 and 152 with respect to the optical axis AX is, for example, 0 along the YZ plane. The degree is monotonically increasing, and immediately behind the correction unit 19, as shown in Fig. 28(b), the extinction regions 151a and 152a move only in different distances from each other in the Z direction, and the overlapping regions of the matte regions 151a and 152a monotonously decrease. As a result, in the state shown in FIG. 28(b), the circular matte regions 151a and 152a correspond to the area of the overlap region to form a matte region having an area larger than that of a circular shape. The area 151a is equivalent to an area smaller than the area corresponding to the two circular extinction areas 151a.

In the reference state of the second substrate 192, the combined extinction region composed of the circular light-shielding dots 151 and 152 exhibits a matting action in which the incident angle of the light with respect to the first substrate 191 is increased. The extinction rate increases. Similarly, in the reference state of the third substrate 193, the combined matte region composed of the circular light-shielding dots 151 and 153 exhibits a matting action in which the incident angle of the light with respect to the first substrate 191 becomes larger. The extinction rate increases.

Next, when the incident angle of the light to the first substrate 191 is fixed, for example, when the incident angle of the light is 0 degrees (when the angle of the incident light with respect to the optical axis AX is 0 degrees), the second substrate 192 is considered. The case where the reference state moves in the Z direction. As described above, when the second substrate 192 is in the reference state, the region 151a that is extinguished by the circular shading point 151 and the region 152a that is extinguished by the circular shading point 152 coincide with each other directly behind the correction unit 19. . That is, as shown in FIG. 28(a), the circular matte regions 151a and 152a form a matte region having an area corresponding to one circular extinction region 151a directly behind the correction unit 19.

On the other hand, when the second substrate 192 monotonously moves in the Z direction from the reference state, the matte region 152a moves in the Z direction immediately behind the correction unit 19, and the region overlapping the matte region 151a monotonously decreases. That is, as shown in FIG. 28(b), immediately behind the correction unit 19, the circular matte regions 151a and 152a correspond to the area of the overlap region to form a matte region having an area larger than that of the matte region. A circular shaped matte region 151a has an area comparable to that of the two circular shaped matte regions 151a.

As described above, when the incident angle of light to the first substrate 191 is 0 degrees, generally, when the incident angle of light is fixed, the combined extinction region composed of the circular shading points 151 and 152 exhibits the following extinction. The effect is that the amount of movement in the Z direction increases from the reference state of the second substrate 192, and the extinction ratio increases. Similarly, when the incident angle of light to the first substrate 191 is fixed, the combined extinction region composed of the circular shading points 151 and 153 exhibits a matting action as follows: that is, from the reference of the third substrate 193 The amount of movement in the Z direction from the state becomes larger, and the extinction ratio increases.

In the second embodiment, when viewed from the optical axis AX direction, the light-shielding point is observed when viewed from the optical axis AX direction with the reference state in which the circular light-shielding points 151 and 152 of the unit extinction region are overlapped with each other. In a range in which a part of 151 overlaps with a part of the light-shielding point 152, the first substrate 191 and the second substrate 192 can relatively move. Similarly, when viewed from the optical axis AX direction, a part of the light-shielding point 151 is observed when viewed from the optical axis AX direction with the reference state in which the circular light-shielding points 151 and 153 of the unit extinction region are overlapped with each other. The first substrate 191 and the third substrate 193 are relatively movable within a range in which a part of the light-shielding dots 153 overlap.

Further, as shown in FIG. 25, the correction unit 19 acts on the light from the pair of surface light sources 30c and 30d which are spaced apart in the Z direction from the quadrupole pupil intensity distribution 30 and sandwich the optical axis AX. However, the correction unit 19 does not act on the light from the pair of surface light sources 30a and 30b which are spaced apart in the X direction from the optical axis AX.

Further, as shown in FIG. 29, the light reaching the center point P1 in the still exposure region ER on the wafer W, that is, the light reaching the center point P1' of the opening portion of the mask mask 11 is 0 degrees. The incident angle is incident on the correction unit 19 (that is, on the first substrate 191). In other words, the light from the surface light source 31c of the pupil intensity distribution 31 associated with the center point P1 is incident on the first substrate 191 and the second substrate 192 at an incident angle of 0 degrees, and the light from the surface light source 31d is 0 degrees. The incident angle is incident on the first substrate 191 and the third substrate 193. Further, although the illustration of the pupil intensity distribution 31 is omitted, the surface light sources 31a to 31d are formed in the same manner as the surface light sources 32a to 32d (33a to 33d) of the pupil intensity distribution 32 (33).

On the other hand, as shown in FIG. 30, the light reaching the peripheral points P2, P3 in the still exposure region ER on the wafer W, that is, the peripheral points P2', P3 reaching the opening portion of the mask mask 11 The light of ' is incident on the correction unit 19 at a relatively large incident angle ± θ. In other words, the light from the surface light sources 32c and 33c of the pupil intensity distributions 32 and 33 associated with the peripheral points P2 and P3 is incident on the first substrate 191 and the second substrate 192 at a relatively large incident angle ±θ. The light from the surface light sources 32d and 33d is incident on the first substrate 191 and the third substrate 193 at a relatively large incident angle ±θ.

In FIG. 29 and FIG. 30, the point of the outermost edge along the Z direction of the surface light source 30c (31c to 33c) is indicated by reference numeral B3 (refer to FIG. 22 and the like), and is indicated by reference numeral B4. The point of the outermost edge along the Z direction of the surface light source 30d (31d to 33d) (please refer to FIG. 22 and the like). In order to facilitate understanding of the description relating to FIGS. 29 and 30, reference symbol B1 denotes a point along the outermost edge of the surface light source 30a (31a to 33a) along the X direction, and reference symbol B2 denotes the surface light source 30b (31b to 33b) The point of the outermost edge along the X direction. However, as described above, the light from the surface light sources 30a (31a to 33a) and the surface light sources 30b (31b to 33b) is not affected by the correction unit 19.

FIG. 31, FIG. 33, and FIG. 34 are views explaining the relationship between the relative positions of the second substrate and the third substrate with respect to the first substrate and the matting action of the correction unit. In FIG. 31, the second substrate 192 is in a reference state, and the light-shielding point 151 of the first substrate 191 and the light-shielding point 152 of the second substrate 192 overlap each other when viewed from the optical axis AX direction. On the other hand, the third substrate 193 is in a state of being moved by a predetermined distance in the +Z direction from the reference state, and a part of the light-shielding point 151 of the first substrate 191 and the second substrate 192 are observed from the optical axis AX direction. A part of the light-shielding dots 152 coincide.

The light reaching the center point P1 in the still exposure region ER on the wafer W, that is, the light reaching the center point P1' of the opening portion of the mask mask 11 is at an incident angle of 0 degrees with respect to the first substrate. 191 incident. Therefore, when the light self-surface light source 30c reaches the center point P1' via the first substrate 191 and the second substrate 192, the amount of light blocked by the combined light-shielding regions of the light-shielding points 151 and 152 is the smallest. When the light self-surface light source 30d reaches the center point P1' via the first substrate 191 and the third substrate 193, the amount of light blocked by the combined light-shielding regions of the light-shielding points 151 and 153 is relatively large.

The light reaching the peripheral points P2, P3 in the static exposure area ER on the wafer W, that is, the light reaching the peripheral points P2', P3' of the opening portion of the reticle 11 is a relatively large incident angle. θ is incident on the first substrate 191. Hereinafter, in order to simplify the description, the peripheral point P2' corresponding to the peripheral point P2 in the still exposure region ER is located on the +Z direction side of the opening portion of the mask mask 11, and the peripheral point P3 in the still exposure region ER. The corresponding peripheral point P3' is located on the -Z direction side.

Therefore, when the light self-surface light source 30c reaches the peripheral points P2' and P3' via the first substrate 191 and the second substrate 192, the amount of light blocked by the combined light-shielding regions of the light-shielding points 151 and 152 is relatively large. . When the light-derived surface light source 30d reaches the peripheral point P2' via the first substrate 191 and the third substrate 193, the amount of light blocked by the combined light-blocking regions of the light-shielding points 151 and 153 is relatively small. When the light-derived surface light source 30d reaches the peripheral point P3' via the first substrate 191 and the third substrate 193, the amount of light blocked by the combined light-blocking regions of the light-shielding points 151 and 153 is the largest.

That is, as shown in the center of FIG. 32, among the quadrupole pupil intensity distributions associated with the center point P1, the correction unit 19 has the smallest extinction effect on the surface light source 31c on the +Z direction side, and the correction unit 19 The matting effect of the surface light source 31d on the -Z direction side is relatively large. Thus, in this portion of FIG. 32 and related FIGS. 33 and 34, the correction unit 19 is schematically represented by the width dimension of the hatching region extending in the X direction in the Z direction. The size of the matting effect.

Further, as shown in the left side of FIG. 32, among the quadrupole pupil intensity distributions associated with the peripheral point P2, the extinction unit 19 has a relatively large extinction effect on the surface light source 32c, and the correction unit 19 generates the surface light source 32d. The matting effect is relatively small. Further, as shown in the right side of FIG. 32, among the quadrupole pupil intensity distributions associated with the peripheral point P3, the extinction unit 19 has a relatively large extinction effect on the surface light source 33c, and the correction unit 19 generates the surface light source 33d. The maximum extinction effect.

In addition, as shown in FIG. 33, the second substrate 192 is moved by a predetermined distance in the -Z direction from the reference state, and the third substrate 193 is moved by a predetermined distance from the reference state in the +Z direction. Among the quadrupole pupil intensity distributions associated with the center point P1, the extinction action by the correction unit 19 for the surface light source 31c and the extinction action by the correction unit 19 for the surface light source 31d are relatively large. Among the quadrupole pupil intensity distributions associated with the peripheral point P2, the mating unit 19 has the largest extinction effect on the surface light source 32c, and the matting unit 19 has a relatively small matting effect on the surface light source 32d. Among the quadrupole pupil intensity distributions associated with the peripheral point P3, the extinction unit 19 has a relatively small extinction effect on the surface light source 33c, and the correction unit 19 has the largest extinction effect on the surface light source 33d.

In addition, as shown in FIG. 34, the second substrate 192 is moved by a predetermined distance from the reference state in the +Z direction, and the third substrate 193 is moved by a predetermined distance from the reference state in the -Z direction. Among the quadrupole pupil intensity distributions associated with the center point P1, the extinction action by the correction unit 19 for the surface light source 31c and the extinction action by the correction unit 19 for the surface light source 31d are relatively large. Among the quadrupole pupil intensity distributions associated with the peripheral point P2, the extinction unit 19 has a relatively small extinction effect on the surface light source 32c, and the correction unit 19 has the largest extinction effect on the surface light source 32d. Among the quadrupole pupil intensity distributions associated with the peripheral point P3, the matting unit 19 has the largest extinction effect on the surface light source 33c, and the mating unit 19 has a relatively small extinction effect on the surface light source 33d.

In this manner, for example, the second substrate 192 can be set at a desired position along the Z direction, and the third substrate 193 can be set at a desired position along the Z direction, thereby clamping the optical axis AX. The light intensity difference shown in FIGS. 23 and 24 existing between the pair of surface light sources 32c and 32d spaced apart in the Z direction and between the pair of surface light sources 33c and 33d is adjusted.

Specifically, the second substrate 192 of the correction unit 19 is located at a position that moves only by a required distance in the -Z direction from the reference state, and the third substrate 193 is moved only in the +Z direction from the reference state. When the position of the distance is required, as shown in FIG. 35, among the pupil intensity distribution 32 associated with the peripheral point P2, the light from the surface light sources 32a and 32b is not subjected to the extinction of the correction unit 19, and therefore, the light of the light The intensity does not change. The light from the surface light source 32c is subjected to the extinction of the correction unit 19, and the light intensity of the light is largely reduced. Even if the light from the surface light source 32d is subjected to the extinction action of the correction unit 19, the degree of reduction in the light intensity of the light is relatively small. As a result, in the pupil intensity distribution 32' related to the peripheral point P2 adjusted by the correction unit 19, the light intensity of the surface light source 32c' spaced apart in the Z direction is substantially equal to the light intensity of the surface light source 32d'. Alternatively, the difference between the light intensity of the surface light source 32c' and the light intensity of the surface light source 32d' is adjusted to a desired light intensity difference.

Further, as shown in Fig. 36, among the pupil intensity distributions 33 associated with the peripheral point P3, the light from the surface light sources 33a and 33b is not subjected to the extinction of the correction unit 19, and therefore the light intensity of the light does not change. . Even if the light from the surface light source 33c is subjected to the extinction action of the correction unit 19, the degree of reduction in the light intensity of the light is relatively small. The light from the surface light source 33d is subjected to the extinction of the correction unit 19, and the light intensity of the light is largely lowered. As a result, in the pupil intensity distribution 33' related to the peripheral point P3 adjusted by the correction unit 19, the light intensity of the surface light source 33c' spaced apart in the Z direction is substantially equal to the light intensity of the surface light source 33d'. Alternatively, the difference between the light intensity of the surface light source 33c' and the light intensity of the surface light source 33d' is adjusted to a desired light intensity difference.

Further, the difference between the light intensity of the surface light source 32c' and the light intensity of the surface light source 32d', and the difference between the light intensity of the surface light source 33c' and the light intensity of the surface light source 33d' are adjusted to a desired light intensity difference. For example, based on the measurement result of the pupil intensity distribution measuring device (not shown), the pupil intensity distribution measuring device is based on the light passing through the projection optical system PL on the pupil plane of the projection optical system PL. The intensity distribution is measured. Specifically, the measurement result of the pupil intensity distribution measuring device is supplied to a control unit (not shown). The control unit outputs a command to the drive control system 194 of the correction unit 19 based on the measurement result of the pupil intensity distribution measuring device so that the pupil intensity distribution on the pupil plane of the projection optical system PL becomes a desired distribution. The drive control system 194 controls the position of the second substrate 192 and the third substrate 193 in the Z direction based on an instruction from the control unit, and the difference between the light intensity of the surface light source 32c' and the light intensity of the surface light source 32d', and the surface light source. The difference between the light intensity of 33c' and the light intensity of the surface light source 33d' is adjusted to the desired light intensity difference.

As described above, in the correction unit 19 of the second embodiment, the second substrate 192 and the first substrate 191 having the light-shielding points 152 and 153 are formed on the incident surface with respect to the first substrate 191 on which the light-shielding point 151 is formed on the emission surface. The substrate 193 can be relatively moved along the longitudinal direction, that is, the Z direction, which is the unit wavefront division surface. Therefore, as will be understood with reference to FIGS. 32 to 34, the correction unit 19 realizes various extinction ratio characteristics, that is, along the Y direction in the still exposure region ER (corresponding to the Z direction on the illumination pupil), and the extinction ratio according to various forms. And it has changed. In the above description, attention is paid only to the pair of light-shielding dots 151 of the substrate 191, one light-shielding dot 152 of the substrate 192, and one light-shielding dot 153 of the substrate 193. However, it is obvious that these light-shielding are formed even separately. When the points are 151 to 153, the correction unit 19 also functions in the same manner as described above.

Therefore, in the illumination optical system (2 to 12) of the second embodiment, the plurality of extinction actions of the correction unit 19 can be used to sandwich the pupil intensity distribution associated with each point in the still exposure region ER. Light intensity between the pair of regions spaced apart in the Y direction by the optical axis AX (between the pair of surface light sources 32c and 32d and between the pair of surface light sources 33c and 33d in the example of FIGS. 23 and 24) The difference is adjusted. Further, in the exposure apparatus (2 to WS) of the second embodiment, the illumination optical system (2 to 12) can be used, and good exposure can be performed under appropriate illumination conditions corresponding to the fine pattern of the mask M, and further The line width can be expected to faithfully transfer the fine pattern of the mask M to the wafer W at the desired position throughout the entire exposure area, wherein the illumination optical system (2-12) is on the wafer W In the pupil intensity distribution of each point in the still exposure region ER, the light intensity difference of the pair of regions which are separated by the optical axis AX and spaced apart in the Y direction is adjusted.

In the second embodiment, it is considered that the light amount distribution on the wafer (irradiated surface) W is affected by, for example, the matting action (adjustment action) of the correction unit 19. In this case, the illuminance distribution in the still exposure region ER or the shape of the still exposure region (illumination region) ER can be changed by the action of the light amount distribution adjustment unit having a known configuration as needed.

Furthermore, in the second embodiment, the three substrates 191 to 193 having the form of a parallel plane plate perpendicular to the optical axis AX are configured to be corrected according to the specific embodiment shown in FIGS. 25 to 27 . Unit 19. Further, a circular shading point 151 as a first matte pattern is distributed on the emission surface of the first substrate 191. Further, on the incident surface of the second substrate 192 and the incident surface of the third substrate 193, a circular light-shielding dot 152 as a second extinction pattern and a circular light-shielding dot 153 as a third extinction pattern are distributed. . However, the present invention is not limited thereto, and the specific configuration of the correction unit 19 may be in various forms.

For example, the number of substrates constituting the correction unit 19, the form of the substrate (outer shape and the like), the posture of the substrate, the direction of relative movement of the substrates, the number of unit extinction regions forming the respective extinction patterns, and the shape and unit of the unit extinction region. The position (incidence surface or exit surface) of the formation surface of the matte region, the form of the distribution of the unit extinction region, the arrangement position of the correction unit 19, and the like may be various forms. Specifically, even if the second substrate 192 and the third substrate 193 are integrated, the first substrate 191 can be moved in the Z direction, or the arrangement of any one of the second substrate 192 and the third substrate 193 can be omitted. The same effects as those of the second embodiment described above can be obtained. Further, as the light-transmitting substrate, for example, a substrate having at least one surface having a curvature can be used.

Further, in the second embodiment, the formation surface of the pupil intensity distribution 30 formed on the illumination pupil near the rear focal plane or the rear focal plane of the micro fly-eye lens 8 is further rearward (mask At the side, a correction unit 19 is disposed. However, the present invention is not limited thereto, and the correction unit 19 may be disposed at a position on the formation surface of the pupil intensity distribution 30 or on the front side (light source side) of the formation surface. Further, the correction unit 19 may be disposed at a position of another illumination pupil on the rear side of the micro fly-eye lens 8 or in the vicinity of the illumination pupil, for example, in the front lens group 12a and the rear lens group of the imaging optical system 12. The position of the illumination pupil between 12b or the vicinity of the illumination pupil.

In general, the correction unit according to the third aspect of the present invention for correcting the pupil intensity distribution formed in the illumination pupil includes: an optical element having a magnification disposed adjacent to the front side of the illumination pupil, and adjacent to the above In the illumination pupil space between the optical elements having the magnification on the rear side of the illumination pupil, the translucent first substrate has a predetermined thickness along the optical axis; and the translucent second substrate is disposed on the second substrate The position in the illumination pupil space is longer than the first substrate, and the translucent second substrate has a predetermined thickness along the optical axis. A first matte pattern including at least one first unit extinction region is formed on the first substrate, and a second unit including at least one second unit extinction region formed corresponding to the first unit extinction region is formed on the second substrate. Matte pattern. Further, the first substrate and the second substrate are relatively movable in the first direction transverse to the optical axis. Furthermore, in the "illumination pupil space", there may be a parallel plane plate or a plane mirror having no magnification.

Further, in the second embodiment described above, the unit extinction region forming the matte pattern of the substrate is formed as a light-blocking region that blocks incident light by, for example, a light-shielding point formed of chromium or chromium oxide. However, the present invention is not limited thereto, and the unit extinction region may be in a form other than the form of the light shielding region. For example, at least one of the plurality of extinction patterns may be formed as a scattering region that scatters incident light or as a diffraction region that diffracts incident light. In general, a scattering region is formed by performing roughening processing on a desired region of a light-transmitting substrate, and a diffraction region is formed by performing a diffraction surface forming process on a desired region.

Further, in the second embodiment, the second substrate 192 and the third substrate 193 are relatively movable with respect to the first substrate 191, respectively. However, the present invention is not limited thereto, and all of the substrates 191 to 193 may be set to be fixed. In this case, it is important that a part of the first unit extinction region (corresponding to the light-blocking point 151) of the first substrate 191 and the second unit extinction region of the second substrate 192 are observed when viewed from the optical axis AX direction ( A part of the first unit extinction region of the first substrate 191 and a third unit extinction region of the third substrate 193 (and the light blocking point) are observed when viewed from the optical axis AX direction. In a state where a part of 153 corresponds to each other, the positions of the respective substrates 191 to 193 are fixed.

Specifically, in the configuration corresponding to the second embodiment, the first unit extinction region and the second unit extinction region are shifted in the Z direction, and the first unit extinction region and the third unit extinction region are in the Z direction. In the state of being displaced, the positions of the respective substrates 191 to 193 are fixed. In other words, in the configuration in which the respective substrates are fixed, the second substrate 192 and the third substrate 193 may be integrated, or the arrangement of any one of the second substrate 192 and the third substrate 193 may be omitted.

In other words, the correction unit according to the second aspect of the present invention, which is configured to fix the position of each substrate, includes a first matte pattern and a first surface perpendicular to the optical axis formed in the illumination pupil space. And the second matte pattern is formed on the second surface that is positioned rearward of the first surface and parallel to the first surface in the illumination pupil space. The first matte pattern includes at least one first unit extinction region, and the second matte pattern includes at least one second unit extinction region formed corresponding to the first unit extinction region. Further, when viewed from the optical axis direction, a part of the first unit extinction region overlaps with a part of the second unit extinction region.

In addition, the correction unit according to the fourth aspect of the present invention includes a translucent first substrate that is disposed in the illumination pupil space and has a predetermined optical axis. The thickness and the light-transmitting second substrate are disposed on the rear side of the first substrate in the illumination pupil space, and have a predetermined thickness along the optical axis. The first substrate includes a first matte pattern formed on at least one of a surface on the incident side of the light and a surface on the light emitting side, and the second substrate includes a surface formed on the incident side of the light and a surface on the light emitting side. The second extinction pattern on at least one of the faces. The first matte pattern includes at least one first unit extinction region, and the second matte pattern includes at least one second unit extinction region formed corresponding to at least one first unit extinction region. Further, the first unit extinction region and the second unit extinction region are provided with a first extinction ratio for light incident on the first unit extinction region at the first incident angle, and are incident at a second incident angle different from the first incident angle. The light to the first unit extinction region is given a second extinction ratio different from the first extinction ratio, and the positional relationship between the first substrate and the second substrate can be changed.

In the above description, the illuminating illumination in which the quadrupole pupil intensity distribution is formed on the illumination pupil, that is, the quadrupole illumination is exemplified, and the effects of the present invention will be described. However, it is obviously not limited to the four-pole illumination, for example, the ring-band illumination that forms the intensity distribution of the ring-shaped pupil, the multi-pole illumination that forms the pupil-like intensity distribution other than the quadrupole, and the like. The present invention is applied to obtain the same effects.

In the above embodiment, instead of the photomask, a variable pattern forming device that forms a predetermined pattern based on predetermined electronic data may be used. When such a variable pattern forming apparatus is used, even if the pattern surface is provided in the longitudinal direction, the influence on the synchronization accuracy can be minimized. Further, as the variable pattern forming device, for example, a digital micromirror device (DMD) including a plurality of reflective elements driven based on predetermined electronic data can be used. An exposure apparatus using a DMD is disclosed, for example, in Japanese Laid-Open Patent Publication No. 2004-304135, International Patent Publication No. 2006/080285, and U.S. Patent Publication No. 2007/0296936, which is incorporated herein by reference. Further, in addition to the non-light-emitting reflective spatial light modulator such as DMD, a transmissive spatial light modulator may be used, or a self-luminous type image display element may be used. Further, the variable pattern forming device can be used even when the pattern surface is laterally disposed. The teachings of U.S. Patent Publication No. 2007/0296936 are hereby incorporated by reference.

Further, in the above embodiment, the micro fly's eye lens 8 is used as the optical integrator, but an inner reflection type optical integrator (typically a rod integrator) may be used instead of the micro fly's eye lens 8. ). In this case, the condensing lens is disposed on the rear side of the zoom lens 7 such that the front focus position of the condensing lens coincides with the rear focus position of the zoom lens 7 to position the incident end on the condensing light. A cylindrical integrator is arranged in such a manner that the rear focus position of the lens or the vicinity of the rear focus position. At this time, the exit end of the cylindrical integrator becomes the position of the illumination field stop 11. When a cylindrical integrator is used, a position in the optical field imaging optical system 12 downstream of the cylindrical integrator that is optically conjugate with the position of the aperture stop AS of the projection optical system PL can be referred to as illumination light. Picture. Further, since the virtual image of the secondary light source that illuminates the pupil plane is formed at the position of the incident surface of the cylindrical integrator, the position and the position where the position is optically conjugate with the position can be referred to as an illumination pupil plane. Here, the zoom lens 7, the above-described collecting lens, and the cylindrical integrator can be regarded as a distribution forming optical system.

Further, in the above embodiment, instead of or in addition to the diffractive optical element 3, for example, a spatial light modulation element may be used, which is arranged in an array shape. Further, the tilt angle and the tilt direction are individually constituted by a plurality of minute element mirrors that are driven and controlled, and the incident light beam is divided into minute units of each of the reflection surfaces and deflected, thereby converting the beam profile into an expected shape or expected. the size of. An illumination optical system using such a spatial light modulation element is disclosed, for example, in Japanese Laid-Open Patent Publication No. 2002-353105.

The various subsystems including the constituent elements mentioned in the scope of the patent application of the present application are assembled to maintain the predetermined mechanical precision, electrical precision, and optical precision, thereby manufacturing the above-described embodiments. Exposure device. In order to ensure the above various precisions, various optical systems are adjusted to achieve optical precision before and after the assembly, various mechanical systems are adjusted to achieve mechanical precision, and various electrical systems are adjusted to achieve electrical precision. The assembly steps of assembling various subsystems into an exposure apparatus include mechanical connection of various subsystems, wiring connection of electronic circuits, and piping connection of a pneumatic circuit. Of course, prior to the assembly step of assembling the various subsystems into an exposure apparatus, there are separate assembly steps for each subsystem. After the assembly steps of assembling the various subsystems into the exposure apparatus are completed, comprehensive adjustment is performed to ensure various precisions of the entire exposure apparatus. Further, it is preferable to manufacture an exposure apparatus in a clean room that is managed such as temperature and cleanliness.

Next, a method of manufacturing an element using the exposure apparatus of the above embodiment will be described. Fig. 37 is a flow chart showing a manufacturing procedure of a semiconductor element. As shown in FIG. 37, in the manufacturing process of the semiconductor element, a metal film is deposited on the wafer W which is a substrate of the semiconductor element (step S40), and a photoresist as a photosensitive material is applied to the photoresist. The vapor-deposited metal film is on (step S42). Next, using the exposure apparatus of the above-described embodiment, the pattern formed on the mask (main mask) M is transferred to each of the image capturing regions on the wafer W (step S44: exposure step), and the crystal after the transfer is completed. The circle W is developed, that is, the patterned photoresist is developed (step S46: development step). Then, the photoresist pattern generated on the surface of the wafer W in step S46 is used as a mask to etch the surface of the wafer W (step S48: processing step).

Here, the photoresist pattern refers to a photoresist layer in which irregularities of a shape corresponding to the pattern transferred by the exposure apparatus of the above-described embodiment are generated, and the concave portion of the photoresist layer is a photoresist. The layer runs through. In step S48, the surface of the wafer W is processed via the photoresist pattern. In the processing performed in step S48, for example, at least one of etching on the surface of the wafer W or film formation of a metal film or the like is included. Furthermore, in step S44, the exposure apparatus of the above-described embodiment transfers the pattern by using the wafer W coated with the photoresist as a photosensitive substrate, that is, the sheet P.

38 is a flow chart showing a manufacturing procedure of a liquid crystal element such as a liquid crystal display element. As shown in FIG. 38, in the manufacturing step of the liquid crystal element, a pattern forming step (step S50), a color filter forming step (step S52), and a cell assembly step (step S54) are sequentially performed. And a module assembly step (step S56).

In the pattern forming step of the step S50, a predetermined pattern such as a circuit pattern and an electrode pattern is formed on the glass substrate coated with the photoresist as the sheet P by using the exposure apparatus of the above-described embodiment. The pattern forming step includes: an exposing step of transferring the pattern to the photoresist layer using the exposure apparatus of the above embodiment; and a developing step of developing the pattern-transferred sheet P, that is, light on the glass substrate The resist layer is developed to produce a photoresist layer of a shape corresponding to the pattern; and a processing step of processing the surface of the glass substrate via the developed photoresist layer.

A color filter is formed in the color filter forming step of step S52, and the color filter has a plurality of R (Red, red), G (Green, green), and B (Blue) arranged in a matrix. Blue) The corresponding three dot groups, or a plurality of strips of filter groups of R, G, and B arranged in the horizontal scanning direction.

In the cell assembly step of step S54, the liquid crystal panel (liquid crystal cell) is assembled using the glass substrate in which the predetermined pattern is formed in step S50 and the color filter formed in step S52. Specifically, a liquid crystal panel is formed by injecting liquid crystal between a glass substrate and a color filter. In the module assembly step of step S56, various components such as a circuit for causing the liquid crystal panel to perform a display operation and a backlight module are mounted on the liquid crystal panel assembled in step S54.

Further, the present invention is not limited to application to an exposure apparatus for manufacturing a semiconductor element, and can be widely applied to, for example, a liquid crystal display element formed on a quadrilateral glass plate or an exposure apparatus for a display device such as a plasma display. Or an exposure apparatus for manufacturing various elements such as a photographic element (CCD or the like), a micromachine, a thin film magnetic head, and a deoxyribonucleic acid (DNA) wafer. Furthermore, the present invention can also be applied to an exposure step (exposure apparatus) in the case of manufacturing a photomask (photomask, reticle, etc.) in which a mask pattern of various elements is formed using a photolithography step.

Further, in the above embodiment, ArF excimer laser light (wavelength: 193 nm) or KrF excimer laser light (wavelength: 248 nm) is used as the exposure light beam, but the invention is not limited thereto, and the present invention may be applied to other A suitable laser light source, for example, is applied to an F ₂ laser light source that supplies laser light having a wavelength of 157 nm or the like.

Further, in the above embodiment, a so-called liquid immersion method in which a light path between the projection optical system and the photosensitive substrate is filled with a medium having a refractive index of more than 1.1 (typically a liquid) may be applied. Methods. In this case, as a method of filling a liquid in the optical path between the projection optical system and the photosensitive substrate, a method of partially filling a liquid as disclosed in the pamphlet of International Publication No. WO99/49504, such as Japan, may be employed. A method for moving a stage of a substrate to be subjected to exposure as a substrate to be exposed in a liquid bath, as disclosed in Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. The liquid tank and the method of holding the substrate in the liquid tank. Here, the teachings of the International Publication No. WO99/49504, the Japanese Patent Laid-Open No. Hei. No. Hei.

Further, in the above-described embodiment, a so-called polarized illumination method disclosed in U.S. Patent Publication Nos. 2006/0170901 and 2007/0146676 can also be applied. The teachings of U.S. Patent Publication No. 2006/0170901 and U.S. Patent Publication No. 2007/0146676 are hereby incorporated by reference.

Moreover, in the above embodiment, the present invention is applied to a step-and-scan type exposure apparatus that scans and exposes the pattern of the mask M to the imaging area of the wafer W. However, the present invention is not limited to this, and the present invention can also be applied to a step and repeat type exposure apparatus that repeats the operation of exposing the pattern of the mask M to the wafer W at once. The action of each exposure area.

Further, in the above embodiment, the present invention is applied to an illumination optical system that illuminates a photomask (or wafer) in an exposure apparatus, but the invention is not limited thereto, and the present invention can also be applied to a photomask ( Ordinary illumination optical system that illuminates the illuminated surface other than the wafer.

Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

1. . . light source

2. . . Plastic optical system

3. . . Diffractive optical element

4. . . Afocal lens

4a, 12a. . . Front lens group

4b, 12b. . . Rear lens group

5. . . Density filter

6. . . Conical cylindrical mirror system

6a. . . First member

6b. . . Second member

7. . . Zoom lens

8. . . Micro fly-eye lens (optical integrator)

9, 9A, 19. . . Correction unit

10. . . Concentrating optical system

11. . . Mask mask

12. . . Imaging optical system

20, 21, 21', 22, 22', 30, 32, 33, 32', 33'. . . Optical intensity distribution (secondary light source)

20a, 20b, 20c, 20d, 21a, 21a', 21b, 21b', 21c, 21d, 22a, 22a', 22b, 22b', 22c, 22d, 30a, 30b, 30c, 30d, 31c, 31d, 32a, 32b, 32c, 32c', 32d, 32d', 33a, 33b, 33c, 33c', 33d, 33d'. . . Surface light source

51a, 51b, 52a, 52b, 151, 152, 153. . . Shading point

51aa, 52aa, 151a, 152a. . . Extinction area

53a, 53b, 54a, 54b. . . Linear region

55a, 55b. . . Combined extinction zone

91, 92, 93, 94, 191, 192, 193. . . Substrate

91a, 92a, 93a, 94a, 191a, 192a, 193a. . . Incident surface

91b, 92b, 93b, 191b, 192b. . . Shot surface

99, 99A, 194. . . Drive control system

AS. . . Aperture stop

AX. . . Optical axis

B1, B2, B3, B4. . . Reference symbol

ER. . . Still exposure area

IP. . . Prescribed surface

M. . . Mask

MS. . . Mask platform

P1, P1'. . . Center point

P2, P3, P2', P3'. . . Peripheral point

PL. . . Projection optical system

S40, S42, S44, S46, S48, S50, S52, S54, S56. . . step

W. . . Wafer

WS. . . Wafer platform

θ. . . Angle of incidence

FIG. 1 is a view schematically showing a configuration of an exposure apparatus according to a first embodiment of the present invention.

Fig. 2 is a view showing a quadrupole secondary light source formed in an illumination pupil in the first embodiment.

3 is a view showing a rectangular still exposure region formed on a wafer in each embodiment.

FIG. 4 is a view for explaining the behavior of the quadrupole pupil intensity distribution formed by the light incident on the center point P1 in the still exposure region in the first embodiment.

FIG. 5 is a view for explaining the properties of the quadrupole pupil intensity distribution formed by the light incident on the peripheral points P2 and P3 in the still exposure region in the first embodiment.

Fig. 6(a) is a view schematically showing a light intensity distribution in the Z direction along the pupil intensity distribution related to the center point P1 in the first embodiment, and Fig. 6(b) is a view schematically showing the first A diagram of the light intensity distribution in the Z direction along the pupil intensity distribution associated with the peripheral points P2, P3 in the embodiment.

Fig. 7 is a first view schematically showing a configuration of a correction unit according to the first embodiment.

FIG. 8 is a second view schematically showing a configuration of a correction unit according to the first embodiment.

FIG. 9 is a third view schematically showing a configuration of a correction unit according to the first embodiment.

Figs. 10(a) and 10(b) are first views for explaining the basic operation of the correction unit of the first embodiment.

Figs. 11(a) and 11(b) are second views for explaining the basic operation of the correction unit of the first embodiment.

Fig. 12 is a third diagram for explaining the basic operation of the correction unit of the first embodiment.

Fig. 13 is a fourth diagram for explaining the basic operation of the correction unit of the first embodiment.

Fig. 14 is a view schematically showing a state in which the pupil intensity distribution associated with the center point P1 is adjusted by the correction unit in the first embodiment.

Fig. 15 is a view schematically showing a state in which the pupil intensity distribution associated with the peripheral points P2 and P3 is adjusted by the correction unit in the first embodiment.

FIG. 16 is a first view schematically showing a configuration of a correction unit according to a modification of the first embodiment.

(a) of FIG. 17 is a view showing a state in which a plurality of light-shielding linear regions are formed on the first substrate of the correction unit of the modification of FIG. 16, and FIG. 17(b) shows that the second substrate is formed on the second substrate. A diagram of a case of a plurality of light-shielding linear regions.

Fig. 18 is a first view for explaining the basic operation of the correction unit of the modification of Fig. 16;

Fig. 19 is a second view for explaining the basic operation of the correction unit of the modification of Fig. 16;

Fig. 20 is a third diagram for explaining the basic operation of the correction unit of the modification of Fig. 16;

FIG. 21 is a view schematically showing a configuration of an exposure apparatus according to a second embodiment of the present invention.

Fig. 22 is a view showing a quadrupole secondary light source formed in an illumination pupil in the second embodiment.

FIG. 23 is a view for explaining the properties of the quadrupole pupil intensity distribution formed by the light incident on the peripheral point P2 in the still exposure region in the second embodiment.

FIG. 24 is a view for explaining the properties of the quadrupole pupil intensity distribution formed by the light incident on the peripheral point P3 in the still exposure region in the second embodiment.

Fig. 25 is a first view schematically showing the configuration of a correction unit of the second embodiment.

Fig. 26 is a second view schematically showing the configuration of a correction unit according to the second embodiment.

Fig. 27 is a third view schematically showing the configuration of a correction unit of the second embodiment.

28(a) and 28(b) are first views for explaining the basic operation of the correction unit of the second embodiment.

Fig. 29 is a second diagram for explaining the basic operation of the correction unit of the second embodiment.

Fig. 30 is a third diagram for explaining the basic operation of the correction unit of the second embodiment.

FIG. 31 is a view for explaining the relationship between the first relative position of the second substrate and the third substrate with respect to the first substrate and the matting action of the correction unit in the second embodiment.

Fig. 32 is a view schematically showing the magnitude of the extinction action by the correction unit of Fig. 31 with respect to a pair of surface light sources.

FIG. 33 is a view schematically showing the magnitude of the extinction effect of the correction unit on the pair of surface light sources when the second substrate and the third substrate are set to the second relative position with respect to the first substrate in the second embodiment. Figure.

FIG. 34 is a view schematically showing the magnitude of the extinction effect of the correction unit on the pair of surface light sources when the second substrate and the third substrate are set to the third relative position with respect to the first substrate in the second embodiment. Figure.

Fig. 35 is a view schematically showing a state in which the pupil intensity distribution associated with the peripheral point P2 is adjusted by the correction unit in the second embodiment.

Fig. 36 is a view schematically showing a state in which the pupil intensity distribution associated with the peripheral point P3 is adjusted by the correction unit in the second embodiment.

37 is a flow chart showing a manufacturing procedure of a semiconductor element.

38 is a flow chart showing a manufacturing procedure of a liquid crystal element such as a liquid crystal display element.

1. . . light source

2. . . Plastic optical system

3. . . Diffractive optical element

4. . . Afocal lens

4a, 12a. . . Front lens group

4b, 12b. . . Rear lens group

5. . . Density filter

6. . . Conical cylindrical mirror system

6a. . . First member

6b. . . Second member

7. . . Zoom lens

8. . . Micro fly-eye lens (optical integrator)

9. . . Correction unit

10. . . Concentrating optical system

11. . . Mask mask

12. . . Imaging optical system

91, 92. . . Substrate

AS. . . Aperture stop

AX. . . Optical axis

IP. . . Prescribed surface

M. . . Mask

MS. . . Mask platform

PL. . . Projection optical system

W. . . Wafer

WS. . . Wafer platform

Claims (45)

An illumination optical system that illuminates an illuminated surface with light from a light source, the illumination optical system comprising: a distribution forming optical system that forms a pupil intensity distribution on an illumination pupil of the illumination optical system using light from the light source And a correction member that corrects the pupil intensity distribution, the correction member including: a translucent first substrate, an optical element having a magnification adjacent to a light source side of the illumination pupil, and adjacent to the illumination The illumination pupil space between the optical elements having the magnification on the side of the irradiation surface having the magnification has a predetermined thickness along the optical axis of the illumination optical system; and the second substrate having the light transmissive property is disposed in the illumination The first substrate includes a surface formed on the incident side of the light and has a predetermined thickness along the optical axis at a position on the irradiation surface side of the first substrate in the pupil space. a first matte pattern on at least one of the surfaces on the emission side, wherein the second substrate includes a surface formed on the incident side of the light and an emission of light The second matte pattern on at least one of the faces, the relative position of the first matte pattern and the second matte pattern may be changed, and the relative position of the first substrate and the second substrate may be changed and The change in the incident angle of the light incident on the first substrate changes the extinction ratio generated by the first matte pattern and the second extinction pattern. An illumination optical system according to claim 1, wherein At least one of the first substrate and the second substrate is movable in a predetermined direction or rotatable around a predetermined axis. The illumination optical system according to claim 2, wherein at least one of the first substrate and the second substrate is movable in the optical axis direction, and the first one is viewed from the optical axis direction. The matte pattern and the second extinction pattern overlap each other. The illumination optical system according to claim 3, wherein the first extinction pattern includes at least one first unit extinction region, and the second extinction pattern includes at least one second unit extinction region, the at least one The two unit extinction regions are formed corresponding to the at least one first unit extinction region, and the at least one second unit extinction region has the same outer shape and the same size as the first unit extinction region. The illumination optical system according to claim 2, wherein at least one of the first substrate and the second substrate is rotatable around the optical axis, and corresponds to the first substrate and the second substrate. The change in the relative position around the optical axis changes the size of the overlapping region in which the first extinction pattern and the second extinction pattern are overlapped when viewed from the optical axis direction. An illumination optical system according to claim 5, wherein The first matte pattern includes a plurality of first unit extinction regions arranged in a circumferential direction of a circle centered on an intersection of the first substrate and the optical axis. The illumination optical system according to claim 6, wherein the plurality of first unit extinction regions are arranged equiangularly along a circumferential direction of the circle. The illumination optical system according to claim 7, wherein the first unit extinction region includes a linear region extending radially from the center of the circle. The illumination optical system according to claim 2, wherein at least one of the first substrate and the second substrate is movable in a direction transverse to the optical axis, and corresponds to the first substrate and the first substrate The change in the relative position of the second substrate along the direction transverse to the optical axis changes the size of the overlapping region in which the first matte pattern and the second extinction pattern are overlapped when viewed from the optical axis direction. The illumination optical system according to claim 1, wherein the first substrate and the second substrate have a parallel plane plate. An illumination optical system as described in claim 10, The first substrate and the second substrate are maintained in parallel with each other. The illumination optical system according to the first aspect of the invention, wherein the first matte pattern is formed on a surface on the emission side of the first substrate, and the second extinction pattern is formed on the incident side of the second substrate surface. The illumination optical system according to claim 1, wherein the first extinction pattern includes a plurality of first unit extinction regions formed by distribution, and the second extinction pattern includes: a plurality of first unit extinctions A plurality of second unit extinction regions formed by the regions are correspondingly distributed. The illumination optical system according to claim 1, wherein at least one of the first extinction pattern and the second extinction pattern includes a light-shielding region that blocks incident light. The illumination optical system according to claim 1, wherein at least one of the first extinction pattern and the second extinction pattern includes a scattering region that scatters incident light. The illumination optical system according to the first aspect of the invention, wherein at least one of the first matte pattern and the second extinction pattern The matte pattern includes a diffraction area that diffracts the incident light. An illumination optical system that illuminates an illuminated surface with light from a light source, the illumination optical system comprising: a distribution forming optical system that forms a pupil intensity distribution on an illumination pupil of the illumination optical system using light from the light source And a correction member that corrects the pupil intensity distribution, the correction member including: a first matte pattern formed on a first surface perpendicular to an optical axis of the illumination optical system, wherein the first surface is adjacent to the illumination An optical element having a magnification on the light source side of the aperture, and an illumination pupil space between the optical element having a magnification adjacent to the illuminated surface of the illumination pupil; and a second extinction pattern positioned on the illumination light a position on the side of the irradiation surface that is closer to the irradiation surface than the first surface, and is formed on a second surface parallel to the first surface; the first matte pattern includes at least one first unit extinction region, the first The second matte pattern includes at least one second unit extinction region formed corresponding to the at least one first unit extinction region, from the light When viewed in the direction of the second part of the unit region is a part of the extinction extinction region coincides with the first unit. The illumination optical system according to claim 17, wherein the first unit extinction region and the second unit extinction region have the same outer shape and the same size, and the first unit extinction region The field and the second unit extinction region are shifted in a first direction transverse to the optical axis. The illumination optical system according to claim 17, wherein the correction member includes: a translucent first substrate, and an optical element having a magnification adjacent to the light source side of the illumination aperture, adjacent to the In the illumination pupil space between the optical elements having the magnification on the surface to be illuminated of the illumination pupil, and having a predetermined thickness along the optical axis of the illumination optical system; and the second substrate having a light transmissive property a position at a position closer to the surface to be irradiated than the first substrate in the illumination pupil space, and having a predetermined thickness along the optical axis, and incidence of light formed on the first substrate by the first matte pattern At least one of the side surface and the light emitting side surface is formed on at least one of a surface on a light incident side and a light emitting side surface of the second substrate. An illumination optical system that illuminates an illuminated surface with light from a light source, the illumination optical system comprising: a distribution forming optical system that forms a pupil intensity distribution on an illumination pupil of the illumination optical system using light from the light source And a correction member that corrects the pupil intensity distribution, the correction member including: a translucent first substrate, an optical element having a magnification adjacent to a light source side of the illumination pupil, and adjacent to the illumination Light a predetermined thickness in the illumination pupil space between the optical elements having the magnification on the irradiation surface side and along the optical axis of the illumination optical system; and the second substrate having the light transmissive property disposed in the illumination pupil space The first substrate includes a predetermined thickness along the optical axis, and the first substrate includes a surface formed on the incident side of the light and a surface on the light emitting side. a first matte pattern on at least one surface, wherein the second substrate includes a second matte pattern formed on at least one of a surface on an incident side of light and a surface on an exit side of light, wherein the first matte pattern includes at least a first unit extinction region, wherein the second matte pattern includes at least one second unit extinction region formed corresponding to the at least one first unit extinction region, wherein the first substrate and the second substrate cross the light The first direction of the shaft is relatively movable. The illumination optical system according to claim 20, wherein the first unit extinction region and the second unit extinction region have the same outer shape and the same size, and when viewed from the optical axis direction, The reference unit in which the first unit extinction region and the second unit extinction region overlap each other is a center, and a part of the first unit extinction region overlaps with a part of the second unit extinction region when viewed from the optical axis direction. Within the range, the first substrate and the second substrate are relatively movable. An illumination optical system as described in claim 20, The first substrate and the second substrate have a parallel plane plate. The illumination optical system according to claim 22, wherein the first substrate and the second substrate are arranged in parallel with each other. The illumination optical system according to claim 20, wherein the first matte pattern is formed on a surface on the emission side of the first substrate, and the second extinction pattern is formed on the incident side of the second substrate surface. The illumination optical system according to claim 20, wherein the first extinction pattern includes a plurality of first unit extinction regions formed by distribution, and the second extinction pattern includes the plurality of first unit extinction regions A plurality of second unit extinction regions formed correspondingly are distributed. The illumination optical system according to claim 20, wherein at least one of the first unit extinction region and the second unit extinction region includes a light shielding region that blocks incident light. An illumination optical system as described in claim 20, The at least one unit extinction region of the first unit extinction region and the second unit extinction region includes a scattering region that scatters incident light. The illumination optical system according to claim 20, wherein at least one of the first unit extinction region and the second unit extinction region includes a diffraction region that diffracts incident light. An illumination optical system that illuminates an illuminated surface with light from a light source, the illumination optical system comprising: a distribution forming optical system that forms a pupil intensity distribution on an illumination pupil of the illumination optical system using light from the light source And a correction member that corrects the pupil intensity distribution, the correction member including: a translucent first substrate, an optical element having a magnification adjacent to a light source side of the illumination pupil, and adjacent to the illumination a predetermined thickness in the illumination pupil space between the optical elements having the magnification on the illuminated surface side of the aperture and along the optical axis of the illumination optical system; and the second substrate having the light transmissive property The position of the illumination pupil space on the side of the irradiation target surface is larger than the first substrate, and has a predetermined thickness along the optical axis, and the first substrate includes a surface formed on the incident side of light and emission of light. a first matte pattern on at least one of the side surfaces, wherein the second substrate includes a surface formed on the incident side of the light and a surface on the light emitting side At least a second extinction pattern surface, The first matte pattern includes at least one first unit extinction region, and the second matte pattern includes at least one second unit extinction region formed corresponding to the at least one first unit extinction region, the first unit extinction region and the The second unit extinction region applies a first extinction ratio to light incident on the first unit extinction region at a first incident angle, and enters the first unit extinction at a second incident angle different from the first incident angle. The light in the region is given a second extinction ratio different from the first extinction ratio, and the positional relationship between the first substrate and the second substrate can be changed. The illumination optical system according to claim 29, wherein the change in the relative position of the first substrate and the second substrate and the change in the incident angle of light incident on the first substrate are the first The extinction pattern and the extinction ratio generated by the second extinction pattern change. The illumination optical system according to claim 29, wherein a part of the first unit extinction region overlaps with a part of the second unit extinction region when viewed from the optical axis direction. The illumination optical system according to claim 29, wherein the first substrate and the second substrate are relatively movable along a first direction transverse to the optical axis. The illumination optical system according to any one of claims 1 to 32, wherein The distribution forming optical system includes an optical integrator, and a pupil intensity distribution is formed on the illumination pupil on the irradiation surface side of the optical integrator; and the correction member is disposed on the illumination pupil including the irradiation surface side. The above illumination is within the aperture space. The illumination optical system according to claim 33, wherein the optical integrator has an elongated rectangular unit wavefront dividing surface along a predetermined direction, and the correction member is positioned to face the illumination pupil. The optical axis of the illumination optical system is sandwiched and the light of a pair of regions spaced apart in a direction orthogonal to the predetermined direction acts. The illumination optical system according to any one of the preceding claims, wherein the distribution forming optical system has an optical integrator, and the illumination light on the side of the illuminated surface is higher than the optical integrator a pupil intensity distribution is formed on the pupil; the correction member is disposed in the illumination pupil space including the illumination pupil on the side of the illumination surface, and the optical integrator has an elongated rectangular unit wavefront division along a predetermined direction The predetermined direction corresponds to the first direction of the correction member. The illumination optical system according to any one of claims 1 to 32, further comprising: a light amount distribution adjusting unit that illuminates the illuminance on the illuminated surface, or The shape of the illumination region formed on the illuminated surface is changed. The illumination optical system according to claim 36, wherein the light amount distribution adjusting unit corrects an influence of the correction member on a light amount distribution on the illuminated surface. The illumination optical system according to claim 33, wherein the illumination optical system is used in combination with a projection optical system, wherein the projection optical system forms a surface that is optically conjugate with the illuminated surface, and the illumination aperture is A position that is optically conjugate with the aperture stop of the above-described projection optical system. The illumination optical system according to claim 33, wherein the distribution forming optical system forms the pupil intensity distribution on an illumination pupil adjacent to the optical integrator, and the correction member is disposed on the adjacent illumination light Hey. The illumination optical system according to claim 33, wherein the distribution forming optical system includes: a relay optical system that guides light from the optical integrator to the illuminated surface side A pupil intensity distribution is formed on the illumination pupil, and the correction member is disposed in the illumination pupil space including the illumination pupil on the side of the illumination surface. The illumination optical system according to claim 40, wherein the relay optical system is optically conjugated to an illumination pupil adjacent to the optical integrator on an illumination pupil on the surface to be illuminated. position. An illuminating optical system according to any one of claims 33 to 41, wherein the predetermined pattern is illuminated to expose the predetermined pattern to the photosensitive substrate. The exposure apparatus according to claim 42, wherein the exposure apparatus includes a projection optical system that forms an image of the predetermined pattern on the photosensitive substrate, and the predetermined pattern and the photosensitive substrate are opposed to each other The projection optical system relatively moves in the scanning direction to project and expose the predetermined pattern onto the photosensitive substrate. The exposure apparatus according to claim 43, wherein the predetermined direction in the optical integrator corresponds to a direction orthogonal to the scanning direction. A component manufacturing method comprising: an exposure step of exposing the predetermined pattern to the photosensitive substrate using an exposure apparatus according to any one of claims 42 to 44; and a developing step to transfer The photosensitive substrate having the predetermined pattern is developed, and the predetermined pattern is formed on the surface of the photosensitive substrate. a mask layer corresponding to the shape; and a processing step of processing the surface of the photosensitive substrate via the mask layer.