JP3400558B2 - 銅および銅合金のエッチング液 - Google Patents

銅および銅合金のエッチング液

Info

Publication number
JP3400558B2
JP3400558B2 JP21073294A JP21073294A JP3400558B2 JP 3400558 B2 JP3400558 B2 JP 3400558B2 JP 21073294 A JP21073294 A JP 21073294A JP 21073294 A JP21073294 A JP 21073294A JP 3400558 B2 JP3400558 B2 JP 3400558B2
Authority
JP
Japan
Prior art keywords
copper
etching
etching solution
persulfate
solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP21073294A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0860386A (ja
Inventor
登志子 中川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MEC Co Ltd
Original Assignee
MEC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MEC Co Ltd filed Critical MEC Co Ltd
Priority to JP21073294A priority Critical patent/JP3400558B2/ja
Priority to TW083108715A priority patent/TW287208B/zh
Priority to CN95105687A priority patent/CN1078629C/zh
Priority to US08/510,299 priority patent/US5700389A/en
Priority to EP95112324A priority patent/EP0696651A1/en
Priority to KR1019950024686A priority patent/KR960007826A/ko
Publication of JPH0860386A publication Critical patent/JPH0860386A/ja
Application granted granted Critical
Publication of JP3400558B2 publication Critical patent/JP3400558B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/10—Other heavy metals
    • C23G1/103—Other heavy metals copper or alloys of copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/383—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by microetching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14—Nitrogen-containing compounds
    • C23F11/149—Heterocyclic compounds containing nitrogen as hetero atom
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0796—Oxidant in aqueous solution, e.g. permanganate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12—Using specific substances
    • H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
    • H05K2203/124—Heterocyclic organic compounds, e.g. azole, furan
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • H05K3/064—Photoresists
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • ing And Chemical Polishing (AREA)
JP21073294A 1994-08-12 1994-08-12 銅および銅合金のエッチング液 Expired - Fee Related JP3400558B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP21073294A JP3400558B2 (ja) 1994-08-12 1994-08-12 銅および銅合金のエッチング液
TW083108715A TW287208B (OSRAM) 1994-08-12 1994-09-22
CN95105687A CN1078629C (zh) 1994-08-12 1995-06-28 铜及铜合金的浸蚀液
US08/510,299 US5700389A (en) 1994-08-12 1995-08-02 Etching solution for copper or copper alloy
EP95112324A EP0696651A1 (en) 1994-08-12 1995-08-04 Etching solution for copper or copper alloy
KR1019950024686A KR960007826A (ko) 1994-08-12 1995-08-10 동 또는 동합금 엣칭액

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21073294A JP3400558B2 (ja) 1994-08-12 1994-08-12 銅および銅合金のエッチング液

Publications (2)

Publication Number Publication Date
JPH0860386A JPH0860386A (ja) 1996-03-05
JP3400558B2 true JP3400558B2 (ja) 2003-04-28

Family

ID=16594198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21073294A Expired - Fee Related JP3400558B2 (ja) 1994-08-12 1994-08-12 銅および銅合金のエッチング液

Country Status (6)

Country Link
US (1) US5700389A (OSRAM)
EP (1) EP0696651A1 (OSRAM)
JP (1) JP3400558B2 (OSRAM)
KR (1) KR960007826A (OSRAM)
CN (1) CN1078629C (OSRAM)
TW (1) TW287208B (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8894876B2 (en) 2010-04-20 2014-11-25 Samsung Display Co., Ltd. Etchant for electrode and method of fabricating thin film transistor array panel using the same

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US20020111024A1 (en) * 1996-07-25 2002-08-15 Small Robert J. Chemical mechanical polishing compositions
US5869130A (en) * 1997-06-12 1999-02-09 Mac Dermid, Incorporated Process for improving the adhesion of polymeric materials to metal surfaces
US6146701A (en) * 1997-06-12 2000-11-14 Macdermid, Incorporated Process for improving the adhension of polymeric materials to metal surfaces
US6020029A (en) * 1997-06-12 2000-02-01 Macdermid, Incorporated Process for treating metal surfaces
US6162503A (en) * 1997-06-12 2000-12-19 Macdermid, Incorporated Process for improving the adhesion of polymeric materials to metal surfaces
JPH1129883A (ja) * 1997-07-08 1999-02-02 Mec Kk 銅および銅合金のマイクロエッチング剤
JP3909920B2 (ja) * 1997-07-24 2007-04-25 メック株式会社 銅および銅合金の表面処理法
US6141870A (en) 1997-08-04 2000-11-07 Peter K. Trzyna Method for making electrical device
US6284309B1 (en) 1997-12-19 2001-09-04 Atotech Deutschland Gmbh Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom
US6276996B1 (en) * 1998-11-10 2001-08-21 Micron Technology, Inc. Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
US6206756B1 (en) 1998-11-10 2001-03-27 Micron Technology, Inc. Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
JP2001181867A (ja) * 1999-12-20 2001-07-03 Asahi Denka Kogyo Kk マイクロエッチング剤
JP2001181868A (ja) * 1999-12-20 2001-07-03 Asahi Denka Kogyo Kk 銅及び銅合金用のマイクロエッチング剤
US6383272B1 (en) * 2000-06-08 2002-05-07 Donald Ferrier Process for improving the adhesion of polymeric materials to metal surfaces
US6419784B1 (en) 2000-06-21 2002-07-16 Donald Ferrier Process for improving the adhesion of polymeric materials to metal surfaces
US6554948B1 (en) 2000-08-22 2003-04-29 Donald Ferrier Process for improving the adhesion of polymeric materials to metal surfaces
KR100419071B1 (ko) * 2001-06-20 2004-02-19 엘지.필립스 엘시디 주식회사 구리-티타늄 막의 식각용액 및 그 식각방법
WO2004111157A1 (ja) * 2003-06-13 2004-12-23 Hitachi Chemical Co., Ltd. 金属用研磨液及び研磨方法
KR100456373B1 (ko) * 2001-12-31 2004-11-09 엘지.필립스 엘시디 주식회사 구리 또는 구리/티타늄 식각액
CN101058711B (zh) * 2003-06-13 2011-07-20 日立化成工业株式会社 金属用研磨液以及研磨方法
CN101058712B (zh) * 2003-06-13 2010-06-02 日立化成工业株式会社 金属用研磨液以及研磨方法
KR100960687B1 (ko) * 2003-06-24 2010-06-01 엘지디스플레이 주식회사 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액
US7232478B2 (en) * 2003-07-14 2007-06-19 Enthone Inc. Adhesion promotion in printed circuit boards
US7541275B2 (en) * 2004-04-21 2009-06-02 Texas Instruments Incorporated Method for manufacturing an interconnect
DE102004045297A1 (de) * 2004-09-16 2006-03-23 Basf Ag Verfahren zum Behandeln von metallischen Oberflächen unter Verwendung von Formulierungen auf Basis von wasserarmer Methansulfonsäure
US7393461B2 (en) * 2005-08-23 2008-07-01 Kesheng Feng Microetching solution
KR101310310B1 (ko) * 2007-03-15 2013-09-23 주식회사 동진쎄미켐 박막트랜지스터 액정표시장치의 식각액 조성물
US20080224092A1 (en) * 2007-03-15 2008-09-18 Samsung Electronics Co., Ltd. Etchant for metal
JP5088352B2 (ja) * 2009-08-24 2012-12-05 日立化成工業株式会社 金属用研磨液及び研磨方法
CN101736352B (zh) * 2009-12-31 2011-04-13 河北省文物保护中心 青铜器文物修复液及其修复方法
KR20110087582A (ko) * 2010-01-26 2011-08-03 삼성전자주식회사 식각액 조성물 및 이를 이용한 식각 방법
KR101608873B1 (ko) 2010-03-18 2016-04-05 삼성디스플레이 주식회사 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법
KR101958606B1 (ko) 2010-07-06 2019-03-14 아토테크 도이칠란드 게엠베하 인쇄회로기판의 제조 방법
CN107072072B (zh) 2010-07-06 2019-10-25 纳美仕有限公司 处理铜表面以增强对印刷电路板中使用的有机衬底的粘着力的方法
US8956918B2 (en) * 2012-12-20 2015-02-17 Infineon Technologies Ag Method of manufacturing a chip arrangement comprising disposing a metal structure over a carrier
KR101527117B1 (ko) 2013-06-27 2015-06-09 삼성디스플레이 주식회사 식각액 조성물, 이를 이용한 금속 배선 제조 방법 및 박막 트랜지스터 기판 제조방법
EP2853619A1 (en) * 2013-09-25 2015-04-01 ATOTECH Deutschland GmbH Method for treatment of recessed structures in dielectric materials for smear removal
CN104694909B (zh) * 2014-07-03 2017-01-25 广东丹邦科技有限公司 一种铜表面粗化剂
JP6000420B1 (ja) * 2015-08-31 2016-09-28 メック株式会社 エッチング液、補給液及び銅配線の形成方法
CN105543846A (zh) * 2016-02-05 2016-05-04 广东成德电子科技股份有限公司 印制电路板中性蚀刻剂及蚀刻方法
WO2019208461A1 (ja) * 2018-04-24 2019-10-31 三菱瓦斯化学株式会社 銅箔用エッチング液およびそれを用いたプリント配線板の製造方法ならびに電解銅層用エッチング液およびそれを用いた銅ピラーの製造方法
CN109536962B (zh) * 2018-11-20 2023-06-16 无锡格菲电子薄膜科技有限公司 一种cvd石墨烯生长衬底铜箔酸性刻蚀液
CN113903832B (zh) * 2021-12-09 2022-02-25 绍兴拓邦电子科技有限公司 一种晶硅表面电池的碱抛光方法
CN114807942B (zh) * 2022-03-07 2024-02-13 上海富柏化工有限公司 一种过硫酸钠微蚀添加剂及其应用
CN115558931B (zh) * 2022-10-26 2023-07-04 广东华智芯电子科技有限公司 铜表面晶花的细化方法、腐蚀液组合及其应用

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8894876B2 (en) 2010-04-20 2014-11-25 Samsung Display Co., Ltd. Etchant for electrode and method of fabricating thin film transistor array panel using the same

Also Published As

Publication number Publication date
JPH0860386A (ja) 1996-03-05
US5700389A (en) 1997-12-23
KR960007826A (ko) 1996-03-22
CN1117531A (zh) 1996-02-28
TW287208B (OSRAM) 1996-10-01
EP0696651A1 (en) 1996-02-14
CN1078629C (zh) 2002-01-30

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