JP3400548B2 - 高純度球状シリカの製造方法 - Google Patents

高純度球状シリカの製造方法

Info

Publication number
JP3400548B2
JP3400548B2 JP14412494A JP14412494A JP3400548B2 JP 3400548 B2 JP3400548 B2 JP 3400548B2 JP 14412494 A JP14412494 A JP 14412494A JP 14412494 A JP14412494 A JP 14412494A JP 3400548 B2 JP3400548 B2 JP 3400548B2
Authority
JP
Japan
Prior art keywords
silica
particles
spherical
spherical silica
aqueous solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP14412494A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0769617A (ja
Inventor
康裕 溶原
晃一 折居
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Chemical Corp
Mitsubishi Rayon Co Ltd
Original Assignee
Mitsubishi Chemical Corp
Mitsubishi Rayon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Chemical Corp, Mitsubishi Rayon Co Ltd filed Critical Mitsubishi Chemical Corp
Priority to JP14412494A priority Critical patent/JP3400548B2/ja
Priority to TW083105263A priority patent/TW271432B/zh
Priority to KR1019940015068A priority patent/KR100279083B1/ko
Priority to SG1996001390A priority patent/SG43819A1/en
Priority to GB9413100A priority patent/GB2279944B/en
Publication of JPH0769617A publication Critical patent/JPH0769617A/ja
Application granted granted Critical
Publication of JP3400548B2 publication Critical patent/JP3400548B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK  ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
    • C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
    • C09C1/28—Compounds of silicon
    • C09C1/30—Silicic acid
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/157—After-treatment of gels
    • C01B33/159—Coating or hydrophobisation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
    • C01B33/157—After-treatment of gels
    • C01B33/158—Purification; Drying; Dehydrating
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/16—Preparation of silica xerogels
    • C01B33/166—Preparation of silica xerogels by acidification of silicate in the presence of an inert organic phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
JP14412494A 1993-06-29 1994-06-03 高純度球状シリカの製造方法 Expired - Lifetime JP3400548B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP14412494A JP3400548B2 (ja) 1993-06-29 1994-06-03 高純度球状シリカの製造方法
TW083105263A TW271432B (ko) 1993-06-29 1994-06-09
KR1019940015068A KR100279083B1 (ko) 1993-06-29 1994-06-28 고순도 구형 실리카 및 그의 제조방법
SG1996001390A SG43819A1 (en) 1993-06-29 1994-06-29 High-purity spherical silica and process for producing same
GB9413100A GB2279944B (en) 1993-06-29 1994-06-29 High-purity spherical silica and process for producing same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP5-182073 1993-06-29
JP18207393 1993-06-29
JP14412494A JP3400548B2 (ja) 1993-06-29 1994-06-03 高純度球状シリカの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2002299339A Division JP4036722B2 (ja) 1993-06-29 2002-10-11 高純度球状シリカ

Publications (2)

Publication Number Publication Date
JPH0769617A JPH0769617A (ja) 1995-03-14
JP3400548B2 true JP3400548B2 (ja) 2003-04-28

Family

ID=26475646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14412494A Expired - Lifetime JP3400548B2 (ja) 1993-06-29 1994-06-03 高純度球状シリカの製造方法

Country Status (5)

Country Link
JP (1) JP3400548B2 (ko)
KR (1) KR100279083B1 (ko)
GB (1) GB2279944B (ko)
SG (1) SG43819A1 (ko)
TW (1) TW271432B (ko)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4199885B2 (ja) * 1999-10-14 2008-12-24 東ソー・シリカ株式会社 インクジェット記録シート用非晶質シリカおよびその製造方法
JP4822576B2 (ja) * 2000-05-30 2011-11-24 京セラ株式会社 無機質中空粉体とその製造方法
KR100793503B1 (ko) * 2000-09-27 2008-01-14 미츠비시 레이온 가부시키가이샤 비공성 구상 실리카 및 그의 제조 방법
JP2003137970A (ja) * 2001-08-24 2003-05-14 Sanyo Chem Ind Ltd 電気電子素子用エポキシ樹脂組成物
EP1629883B1 (en) * 2003-05-13 2010-07-28 Asahi Glass Company Ltd. Process for producing inorganic sphere
US7179688B2 (en) 2003-10-16 2007-02-20 Kulicke And Soffa Industries, Inc. Method for reducing or eliminating semiconductor device wire sweep in a multi-tier bonding device and a device produced by the method
US6847122B1 (en) * 2003-10-16 2005-01-25 Kulicke & Soffa Investments, Inc. System and method for preventing and alleviating short circuiting in a semiconductor device
US6955949B2 (en) 2003-10-16 2005-10-18 Kulicke & Soffa Investments, Inc. System and method for reducing or eliminating semiconductor device wire sweep
KR100620215B1 (ko) 2004-07-29 2006-09-08 한국원자력연구소 스와이프 시료 분석을 위한 실리카기반 표준물질
KR100651243B1 (ko) 2005-03-04 2006-11-30 (주) 에스오씨 구형 실리카의 제조 방법
JP4707186B2 (ja) * 2005-10-03 2011-06-22 株式会社四国総合研究所 シリカ粉体の製法およびそれによって得られたシリカ粉体
JP5042252B2 (ja) * 2009-02-20 2012-10-03 学校法人 芝浦工業大学 ガラス材料の回収方法
EP2408554B1 (de) * 2009-03-16 2016-12-14 Basf Se Katalysatorträger auf silicagel-basis
JP6059519B2 (ja) * 2012-11-28 2017-01-11 旭硝子株式会社 シリカ含有粒子の製造方法
JP2014105126A (ja) * 2012-11-28 2014-06-09 Asahi Glass Co Ltd シリカ含有粒子の製造方法
JP6203672B2 (ja) * 2013-03-29 2017-09-27 株式会社アドマテックス ３次元実装型半導体装置、樹脂組成物及びその製造方法
JP6196462B2 (ja) * 2013-04-11 2017-09-13 株式会社トクヤマ 多孔質球状金属酸化物
JP5865466B2 (ja) * 2014-11-17 2016-02-17 株式会社アドマテックス シリカ粒子材料及びフィラー含有樹脂組成物
EP4299510A1 (en) * 2021-03-31 2024-01-03 Denka Company Limited Metal oxide powder, and method for producing same
WO2022210119A1 (ja) * 2021-03-31 2022-10-06 デンカ株式会社 二酸化ケイ素粉末

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2921839A (en) * 1955-12-23 1960-01-19 Columbia Southern Chem Corp Silica precipitation method
JPH01230422A (ja) * 1988-03-10 1989-09-13 Nippon Chem Ind Co Ltd 高純度シリカ及びその製造方法
CA2087911C (en) * 1992-01-24 1999-06-29 Kiyoshi Abe Spherical granules of porous silica or silicate, process for the production thereof, and applications thereof
JP3410522B2 (ja) * 1993-09-09 2003-05-26 水澤化学工業株式会社 粒状非晶質シリカの製造方法

Also Published As

Publication number Publication date
SG43819A1 (en) 1997-11-14
JPH0769617A (ja) 1995-03-14
KR950000563A (ko) 1995-01-03
TW271432B (ko) 1996-03-01
GB2279944A (en) 1995-01-18
GB9413100D0 (en) 1994-08-17
GB2279944B (en) 1996-10-02
KR100279083B1 (ko) 2001-02-01

Similar Documents

Publication Publication Date Title
JP3400548B2 (ja) 高純度球状シリカの製造方法
JP6916650B2 (ja) シリカエアロゲル粉体及びその製造方法
KR101774783B1 (ko) 에어로겔 및 그 제조 방법
KR101565932B1 (ko) 금속 산화물 분말 및 그 제조 방법
WO2021172294A1 (ja) 中空シリカ粒子及びその製造方法
JP6196462B2 (ja) 多孔質球状金属酸化物
US7070748B2 (en) Non-porous spherical silica and method for production thereof
JP2017512132A (ja) クロマトグラフィー材料及びその合成方法
JP2001518835A (ja) 低密度ゲル構造体の製造方法
JP7278110B2 (ja) 球状シリカエアロゲル粉体の製造方法
JP7455666B2 (ja) 多孔質金属酸化物粉末及びその製造方法
Heley et al. Fine low density silica powders prepared by supercritical drying of gels derived from silicon tetrachloride
TW202233158A (zh) 多孔質球狀氧化矽及其製造方法
JP6055362B2 (ja) 多孔質球状金属酸化物の製造方法
JP4036722B2 (ja) 高純度球状シリカ
JP2020142947A (ja) 球状シリカエアロゲル粉体
JP2005054131A (ja) 吸着性シリカ充填材及びその製造方法並びに封止用樹脂組成物
JP4006220B2 (ja) 表面改質球状シリカ、その製造方法及び半導体封止材用樹脂組成物
JP2005054129A (ja) 吸着性シリカ充填材及びその製造方法並びに封止用樹脂組成物。
JP2003267722A (ja) 無孔質球状シリカ及びその製造方法
JP2005054130A (ja) 吸着性シリカ充填材及びその製造方法並びに封止用樹脂組成物
JP4649677B2 (ja) 高純度シリカ粒子の製造方法、これにより得られた高純度シリカ粒子及びこれを用いた高純度石英ガラス粒子の製造方法
JP2005119884A (ja) 非孔性球状シリカ及びその製造方法
WO2024203521A1 (ja) 疎水性シリカ粉体の製造方法及び疎水化処理剤
WO2024185656A1 (ja) 多孔質球状シリカ、触媒担体、化粧品、分析カラム、研磨剤、樹脂組成物、および、多孔質球状シリカの製造方法

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080221

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090221

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100221

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100221

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110221

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110221

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120221

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120221

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120221

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130221

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130221

Year of fee payment: 10

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130221

Year of fee payment: 10

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130221

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140221

Year of fee payment: 11

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term