JP3358814B2 - メモリコア編成 - Google Patents

メモリコア編成

Info

Publication number
JP3358814B2
JP3358814B2 JP52288895A JP52288895A JP3358814B2 JP 3358814 B2 JP3358814 B2 JP 3358814B2 JP 52288895 A JP52288895 A JP 52288895A JP 52288895 A JP52288895 A JP 52288895A JP 3358814 B2 JP3358814 B2 JP 3358814B2
Authority
JP
Japan
Prior art keywords
node
current
transistor
sense
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP52288895A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08510079A (ja
Inventor
スマランドゥー，ジョージ
ランブラッチェ，エミル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of JPH08510079A publication Critical patent/JPH08510079A/ja
Application granted granted Critical
Publication of JP3358814B2 publication Critical patent/JP3358814B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators

Landscapes

  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
JP52288895A 1994-03-02 1994-11-18 メモリコア編成 Expired - Fee Related JP3358814B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/204,866 US5390147A (en) 1994-03-02 1994-03-02 Core organization and sense amplifier having lubricating current, active clamping and buffered sense node for speed enhancement for non-volatile memory
US204,866 1994-03-02
PCT/US1994/013359 WO1995024040A1 (en) 1994-03-02 1994-11-18 Memory core organization

Publications (2)

Publication Number Publication Date
JPH08510079A JPH08510079A (ja) 1996-10-22
JP3358814B2 true JP3358814B2 (ja) 2002-12-24

Family

ID=22759783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52288895A Expired - Fee Related JP3358814B2 (ja) 1994-03-02 1994-11-18 メモリコア編成

Country Status (8)

Country Link
US (1) US5390147A (US07576128-20090818-C00048.png)
EP (1) EP0698271B1 (US07576128-20090818-C00048.png)
JP (1) JP3358814B2 (US07576128-20090818-C00048.png)
KR (1) KR100283599B1 (US07576128-20090818-C00048.png)
CN (1) CN1049515C (US07576128-20090818-C00048.png)
DE (1) DE69422915T2 (US07576128-20090818-C00048.png)
TW (1) TW265486B (US07576128-20090818-C00048.png)
WO (1) WO1995024040A1 (US07576128-20090818-C00048.png)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5559455A (en) * 1994-12-23 1996-09-24 Lucent Technologies Inc. Sense amplifier with overvoltage protection
FR2734390B1 (fr) * 1995-05-19 1997-06-13 Sgs Thomson Microelectronics Circuit de detection de courant pour la lecture d'une memoire en circuit integre
US5666043A (en) * 1995-06-07 1997-09-09 Analog Devices, Inc. Voltage detector with trigger based on output load currency
US5798967A (en) * 1997-02-22 1998-08-25 Programmable Microelectronics Corporation Sensing scheme for non-volatile memories
DE69834313D1 (de) * 1998-02-13 2006-06-01 St Microelectronics Srl Verbesserter Leseverstärker für nichtflüchtigen Speicher mit erweitertem Versorgungsspannungsbereich
JP2000090682A (ja) * 1998-09-10 2000-03-31 Toshiba Corp 半導体記憶装置
US6377084B2 (en) 1999-02-22 2002-04-23 Micron Technology, Inc. Pseudo-differential amplifiers
JP2000244322A (ja) * 1999-02-23 2000-09-08 Mitsubishi Electric Corp 半導体集積回路装置
US6307405B2 (en) 1999-04-27 2001-10-23 Micron Technology, Inc. Current sense amplifier and current comparator with hysteresis
US6288575B1 (en) * 1999-08-24 2001-09-11 Micron Technology, Inc. Pseudo-differential current sense amplifier with hysteresis
US6380787B1 (en) * 1999-08-31 2002-04-30 Micron Technology, Inc. Integrated circuit and method for minimizing clock skews
US6219279B1 (en) * 1999-10-29 2001-04-17 Zilog, Inc. Non-volatile memory program driver and read reference circuits
US6906557B1 (en) * 2000-06-30 2005-06-14 Intel Corporation Fuse sense circuit
TW523977B (en) 2001-09-26 2003-03-11 Macronix Int Co Ltd Circuit and method for stability and speed enhancement for a sense amplifier
US7324394B1 (en) 2002-08-01 2008-01-29 T-Ram Semiconductor, Inc. Single data line sensing scheme for TCCT-based memory cells
US6903987B2 (en) * 2002-08-01 2005-06-07 T-Ram, Inc. Single data line sensing scheme for TCCT-based memory cells
US6775186B1 (en) * 2003-07-03 2004-08-10 Tower Semiconductor Ltd. Low voltage sensing circuit for non-volatile memory device
US6831866B1 (en) 2003-08-26 2004-12-14 International Business Machines Corporation Method and apparatus for read bitline clamping for gain cell DRAM devices
JP4683833B2 (ja) 2003-10-31 2011-05-18 株式会社半導体エネルギー研究所 機能回路及びその設計方法
KR100513403B1 (ko) * 2003-11-24 2005-09-09 삼성전자주식회사 센스 앰프를 구비한 비휘발성 반도체 메모리 장치
KR101176219B1 (ko) * 2004-07-30 2012-08-23 스펜션 저팬 리미티드 반도체 장치 및 감지 신호의 생성 방법
US7542322B2 (en) * 2004-09-30 2009-06-02 Intel Corporation Buffered continuous multi-drop clock ring
US8045390B2 (en) * 2008-03-21 2011-10-25 Macronix International Co., Ltd. Memory system with dynamic reference cell and method of operating the same
JP5117950B2 (ja) * 2008-07-18 2013-01-16 ラピスセミコンダクタ株式会社 データ読出回路及び半導体記憶装置
CN102013267B (zh) * 2009-09-07 2013-07-31 上海宏力半导体制造有限公司 存储器和灵敏放大器
US8509026B2 (en) 2012-01-10 2013-08-13 Ememory Technology Inc. Word line boost circuit
US9070425B2 (en) 2013-10-31 2015-06-30 Micron Technology, Inc. Data line control for sense amplifiers
DE102016104987B4 (de) * 2016-03-17 2024-05-23 Infineon Technologies Ag Speicheranordnung und Verfahren zum Lesen einer Speicherzelle eines Speichers
CN106601278B (zh) * 2016-12-19 2019-11-19 佛山中科芯蔚科技有限公司 一种灵敏放大器
CN111696607B (zh) 2019-03-13 2022-05-17 力旺电子股份有限公司 可编程可抹除的非易失性存储器

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59218696A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体メモリ
JPS61172300A (ja) * 1985-01-26 1986-08-02 Toshiba Corp 半導体記憶装置
IT1213343B (it) * 1986-09-12 1989-12-20 Sgs Microelettronica Spa Circuito di rilevamento dello stato di celle di matrice in memorie eprom in tecnologia mos.
DE68926124T2 (de) * 1988-06-24 1996-09-19 Toshiba Kawasaki Kk Halbleiterspeicheranordnung
US5148397A (en) * 1989-03-16 1992-09-15 Oki Electric Industry Co. Ltd. Semiconductor memory with externally controlled dummy comparator
US5237534A (en) * 1989-04-27 1993-08-17 Kabushiki Kaisha Toshiba Data sense circuit for a semiconductor nonvolatile memory device
JPH0793032B2 (ja) * 1989-04-27 1995-10-09 日本電気株式会社 半導体記憶装置
US5293345A (en) * 1989-06-12 1994-03-08 Kabushiki Kaisha Toshiba Semiconductor memory device having a data detection circuit with two reference potentials
US5198997A (en) * 1989-08-11 1993-03-30 Sony Corporation Ultraviolet erasable nonvolatile memory with current mirror circuit type sense amplifier
JPH0752592B2 (ja) * 1989-08-18 1995-06-05 株式会社東芝 半導体記憶装置
JPH0793033B2 (ja) * 1989-08-24 1995-10-09 日本電気株式会社 センスアンプ
JPH03241594A (ja) * 1990-02-19 1991-10-28 Fujitsu Ltd 半導体メモリのセンス回路
IT1246241B (it) * 1990-02-23 1994-11-17 Sgs Thomson Microelectronics Circuito per la lettura dell'informazione contenuta in celle di memoria non volatili
JP2586723B2 (ja) * 1990-10-12 1997-03-05 日本電気株式会社 センスアンプ
DE69026946T2 (de) * 1990-11-19 1996-09-05 Sgs Thomson Microelectronics Verbesserte Abfühlschaltung für Speicheranordnungen wie nichtflüchtige Speicher mit kompensiertem Offsetstrom
EP0536095B1 (en) * 1991-09-26 1998-01-21 STMicroelectronics S.r.l. Sense amplifier

Also Published As

Publication number Publication date
US5390147A (en) 1995-02-14
KR100283599B1 (ko) 2001-03-02
DE69422915D1 (de) 2000-03-09
DE69422915T2 (de) 2000-10-05
CN1049515C (zh) 2000-02-16
EP0698271A1 (en) 1996-02-28
JPH08510079A (ja) 1996-10-22
EP0698271A4 (en) 1997-11-26
KR960702158A (ko) 1996-03-28
CN1143424A (zh) 1997-02-19
EP0698271B1 (en) 2000-02-02
WO1995024040A1 (en) 1995-09-08
TW265486B (US07576128-20090818-C00048.png) 1995-12-11

Similar Documents

Publication Publication Date Title
JP3358814B2 (ja) メモリコア編成
KR100284203B1 (ko) Eprom메모리어레이를위한스위칭그라운드를가진판독장치및방법
JP3145722B2 (ja) フローティングゲート型メモリセル内に記憶されるデータ読み取り用センス回路
US6246625B1 (en) Semiconductor integrated circuit device having hierarchical power source arrangement
JP3116921B2 (ja) 半導体記憶装置
KR0122108B1 (ko) 반도체 메모리 장치의 비트라인 센싱회로 및 그 방법
US5638332A (en) Integrated circuit memory device with balancing circuit including follower amplifier coupled to bit line
EP0199501B1 (en) Cmos current sense amplifiers
US5552728A (en) Latch-type current sense amplifier with self-regulating inputs
JP3537010B2 (ja) 半導体記憶装置
JPH0383295A (ja) センスアンプ
JPH06162776A (ja) 半導体メモリ回路
US6914836B2 (en) Sense amplifier circuits using a single bit line input
US5341333A (en) Circuits and methods for amplification of electrical signals
US7586791B2 (en) Delay circuit for controlling a pre-charging time of bit lines of a memory cell array
US6512697B1 (en) Circuit and method for speed and stability enhancement for a sense amplifier
JP3828694B2 (ja) 半導体メモリ装置のセンシング回路並びにこれを用いたセンシング方法
JPS62170097A (ja) 半導体記憶装置
JPH05274883A (ja) 半導体記憶装置
US5898622A (en) Read circuit for memory
US5708615A (en) Semiconductor memory device with reduced current consumption during precharge and reading periods
US5565802A (en) Semiconductor device with differential amplifier operable at high speed
JPH06500881A (ja) ダイナミック半導体メモリ
KR100275165B1 (ko) Eprom 메모리 어레이를 위한 과충전/방전 전압 조정기
US5734610A (en) Circuit for reading non-volatile memories

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees