JP3278951B2 - オーミック電極の形成方法 - Google Patents

オーミック電極の形成方法

Info

Publication number
JP3278951B2
JP3278951B2 JP3274193A JP3274193A JP3278951B2 JP 3278951 B2 JP3278951 B2 JP 3278951B2 JP 3274193 A JP3274193 A JP 3274193A JP 3274193 A JP3274193 A JP 3274193A JP 3278951 B2 JP3278951 B2 JP 3278951B2
Authority
JP
Japan
Prior art keywords
layer
type
film
ohmic electrode
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3274193A
Other languages
English (en)
Japanese (ja)
Other versions
JPH06188524A (ja
Inventor
正文 小沢
哲 伊藤
二三代 成井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP3274193A priority Critical patent/JP3278951B2/ja
Priority to KR1019930021265A priority patent/KR100296182B1/ko
Priority to US08/136,870 priority patent/US5373175A/en
Priority to TW082108721A priority patent/TW240342B/zh
Priority to DE69323031T priority patent/DE69323031T2/de
Priority to EP93117183A priority patent/EP0594212B1/en
Publication of JPH06188524A publication Critical patent/JPH06188524A/ja
Application granted granted Critical
Publication of JP3278951B2 publication Critical patent/JP3278951B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP3274193A 1992-10-23 1993-01-28 オーミック電極の形成方法 Expired - Fee Related JP3278951B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP3274193A JP3278951B2 (ja) 1992-10-23 1993-01-28 オーミック電極の形成方法
KR1019930021265A KR100296182B1 (ko) 1992-10-23 1993-10-14 옴전극과그형성방법및발광소자
US08/136,870 US5373175A (en) 1992-10-23 1993-10-18 Ohmic electrode and a light emitting device
TW082108721A TW240342B (US06168655-20010102-C00055.png) 1992-10-23 1993-10-20
DE69323031T DE69323031T2 (de) 1992-10-23 1993-10-22 Ohmsche Elektrode, Verfahren für ihre Herstellung und lichtemittierende Vorrichtung
EP93117183A EP0594212B1 (en) 1992-10-23 1993-10-22 An ohmic electrode, its fabricating method and a light emitting device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP4-309603 1992-10-23
JP30960392 1992-10-23
JP3274193A JP3278951B2 (ja) 1992-10-23 1993-01-28 オーミック電極の形成方法

Publications (2)

Publication Number Publication Date
JPH06188524A JPH06188524A (ja) 1994-07-08
JP3278951B2 true JP3278951B2 (ja) 2002-04-30

Family

ID=26371319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3274193A Expired - Fee Related JP3278951B2 (ja) 1992-10-23 1993-01-28 オーミック電極の形成方法

Country Status (6)

Country Link
US (1) US5373175A (US06168655-20010102-C00055.png)
EP (1) EP0594212B1 (US06168655-20010102-C00055.png)
JP (1) JP3278951B2 (US06168655-20010102-C00055.png)
KR (1) KR100296182B1 (US06168655-20010102-C00055.png)
DE (1) DE69323031T2 (US06168655-20010102-C00055.png)
TW (1) TW240342B (US06168655-20010102-C00055.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1311258C (zh) * 2002-11-18 2007-04-18 新日本石油化学株式会社 光学元件的制造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263372A (ja) * 1994-03-24 1995-10-13 Sharp Corp Ｉｉ−ｖｉ族化合物半導体装置およびその製造方法
JP3586293B2 (ja) * 1994-07-11 2004-11-10 ソニー株式会社 半導体発光素子
JPH0945890A (ja) * 1995-05-25 1997-02-14 Sharp Corp オーミック電極構造、半導体装置およびその製造方法
US5760423A (en) * 1996-11-08 1998-06-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device
JP3854693B2 (ja) * 1996-09-30 2006-12-06 キヤノン株式会社 半導体レーザの製造方法
US5952778A (en) * 1997-03-18 1999-09-14 International Business Machines Corporation Encapsulated organic light emitting device
US6448648B1 (en) * 1997-03-27 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Metalization of electronic semiconductor devices
US6087725A (en) * 1997-09-29 2000-07-11 Matsushita Electric Industrial Co., Ltd. Low barrier ohmic contact for semiconductor light emitting device
JP3414371B2 (ja) * 2000-07-31 2003-06-09 株式会社村田製作所 弾性表面波装置及びその製造方法
CN100428504C (zh) * 2003-11-06 2008-10-22 厦门市三安光电科技有限公司 一种半导体器件及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4098921A (en) * 1976-04-28 1978-07-04 Cutler-Hammer Tantalum-gallium arsenide schottky barrier semiconductor device
US4350990A (en) * 1979-02-28 1982-09-21 General Motors Corporation Electrode for lead-salt diodes
US4414561A (en) * 1979-09-27 1983-11-08 Bell Telephone Laboratories, Incorporated Beryllium-gold ohmic contact to a semiconductor device
DE3176025D1 (en) * 1980-08-04 1987-04-23 Santa Barbara Res Center Metallic contacts to compound semiconductor devices
US4514896A (en) * 1981-03-25 1985-05-07 At&T Bell Laboratories Method of forming current confinement channels in semiconductor devices
JPS5947790A (ja) * 1982-09-13 1984-03-17 Hitachi Ltd 半導体レ−ザ装置
JPH0658977B2 (ja) * 1984-07-16 1994-08-03 株式会社小糸製作所 半導体素子
JPH084170B2 (ja) * 1986-10-13 1996-01-17 セイコーエプソン株式会社 半導体発光素子及びその製造方法
US5187547A (en) * 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
JP2632975B2 (ja) * 1988-10-31 1997-07-23 日本電信電話株式会社 ｐ型ＺｎＳｅに対するオーミック電極形成法
US5081632A (en) * 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
DE4021199A1 (de) * 1990-06-11 1991-12-19 Smartdiskette Gmbh In edv-einrichtungen einsteckbares element
US5045502A (en) * 1990-05-10 1991-09-03 Bell Communications Research, Inc. PdIn ohmic contact to GaAs
US5274248A (en) * 1991-06-05 1993-12-28 Matsushita Electric Industrial Co., Ltd. Light-emitting device with II-VI compounds
JP3221073B2 (ja) * 1992-06-19 2001-10-22 ソニー株式会社 発光素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ＥＬＥＣＴＲＯＮＩＣＳ ＬＥＴＴＥＲＳ Ｖｏｌ．２８，Ｎｏ．１９，ｐ．１７９８−１７９９

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1311258C (zh) * 2002-11-18 2007-04-18 新日本石油化学株式会社 光学元件的制造方法

Also Published As

Publication number Publication date
KR100296182B1 (ko) 2001-10-24
EP0594212B1 (en) 1999-01-13
KR940010435A (ko) 1994-05-26
JPH06188524A (ja) 1994-07-08
DE69323031D1 (de) 1999-02-25
US5373175A (en) 1994-12-13
TW240342B (US06168655-20010102-C00055.png) 1995-02-11
DE69323031T2 (de) 1999-07-15
EP0594212A1 (en) 1994-04-27

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