KR940010435A - 오믹전극과 그 형성방법 및 발광소자 - Google Patents

오믹전극과 그 형성방법 및 발광소자 Download PDF

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KR940010435A
KR940010435A KR1019930021265A KR930021265A KR940010435A KR 940010435 A KR940010435 A KR 940010435A KR 1019930021265 A KR1019930021265 A KR 1019930021265A KR 930021265 A KR930021265 A KR 930021265A KR 940010435 A KR940010435 A KR 940010435A
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ohmic electrode
compound semiconductor
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alloy
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KR100296182B1 (ko
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마사후미 오자와
사도시 이도
후미요 나루이
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오가 노리오
소니 가부시기가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser

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  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

Ⅱ-Ⅵ족 화합물 반도체에 대한 밀착성이 양호하고 접촉비저항이 낮은 오믹전극을 실현한다.
P형 ZnTe층(2)상에 Pd막(3)을 최하층으로 하는 금속다층막으로 이루어지는 오믹전극을 진공증착법 등에 의해 형성한다. 오믹전극 형성 후에 필요에 따라서 100-300℃의 온도로 어닐은 행한다.
이와같이 하여 형성되는 오믹전극을 Ⅱ-Ⅵ족 화합물 반도체를 사용하는 반도체레이저나 발광다이오드의 P측의 오믹전극으로서 사용한다.

Description

오믹전극과 그 형성방법 및 발광소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 본 발명의 제1실시예를 설명하기 위한 단면도,
제3도는 본 발명의 제1실시예를 설명하기 위한 평면도,
제4도는 p형 ZnTe층상에 Au/Pt/Pd 구조의 오믹전극을 형성한 경우의 I-V특성의 측정결과를 도시한 그래프,
제5도는 p형 ZnTe층상에 Au/Pt/Pd 구조의 오믹전극을 형성한 후에 250℃로 어닐을 행한 경우의 I-V 특성의 측정결과를 도시한 그래프.

Claims (10)

  1. p형의 H-Ⅵ족 화합물 반도체에 대한 오믹전극에 있어서, 상기 P형의 Ⅱ-Ⅵ족 화합물 반도체에 의한 최하층의 부분이 Pd 또는 Pd합금으로 이루어지는 것을 특징으로 하는 오믹전극.
  2. 제1항에 있어서, 상기 Pd 또는 Pd합금으로 이루어지는 상기 최하층의 두께는 4∼15㎚인 것을 특징으로 하는 오믹전극.
  3. 제1항 또는 제2항에 있어서, 상기 P형의 Ⅱ-Ⅵ족 화합물 반도체의 정공(正孔)농도는 1018㎝-3이상인 것을 특징으로 하는 오믹전극.
  4. 제1항, 제2항 또는 제3항에 있어서, 상기 Ⅱ-Ⅵ족 화합물 반도체는 ZnTe, ZnSexTe1-x(0(x≤1) 또는 ZnSe/ZnTe초격자(超格子)인 것을 특징으로 하는 오믹전극.
  5. 제4항에 있어서, 상기 ZnTe, ZnSexTe1-x(0〈x≤1) 또는 ZnSe/ZnTe초격자는 ZnSe 또는 Zn 및 Se를 주성분으로 하는 화합물 반도체상에 형성되어 있는 것을 특징으로 하는 오믹전극.
  6. p형의 Ⅱ-Ⅵ족 화합물 반도체에 대한 오믹전극의 형성방법에 있어서, 상기 P형의 Ⅱ-Ⅵ족 화합물 반도체상에 최하층이 Pd 또는 Pd합금으로 이루어지는 금속층을 기상성장법에 의해 형성하도록 한 것을 특징으로 하는 오믹전극의 형성 방법.
  7. p형의 Ⅱ-Ⅵ족 화합물 반도체에 대한 오믹전극의 형성방법에 있어서, 상기 p형의 Ⅱ-Ⅵ족 화합물 반도체상에 최하층이 Pd 또는 Pd합금으로 이루어지는 금속층을 기상성장법에 의해 형성한 후, 100∼300℃의 온도로 열처리하도록 한 것을 특징으로 하는 오믹전극의 형성방법.
  8. p형의 Ⅱ-Ⅵ족 화합물 반도체에 대한 오믹전극의 형성방법에 있어서, 상기 P형의 Ⅱ-Ⅵ족 화합물 반도체상에 최하층이 Pd 또는 Pd합금으로 이루어지는 금속층을 기상성장법에 의해 형성한 후, 150∼250℃의 온도로 열처리하도록 한 것을 특징으로 하는 오믹전극의 형성방법.
  9. 제6항, 제7항 또는 제8항에 있어서, 상기 Pd 또는 Pd합금으로 이루어지는 상기 최하층의 부분의 두께는 4∼l5nm인 것을 특징으로 하는 오믹전극의 형성방법.
  10. p형의 Ⅱ-Ⅵ족 화합물 반도체상에 최하층의 부분이 Pd 또는 Pd합금으로 이루어지는 것을 특징으로 하는 발광소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930021265A 1992-10-23 1993-10-14 옴전극과그형성방법및발광소자 KR100296182B1 (ko)

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JP30960392 1992-10-23
JP92-309,603 1992-10-23
JP93-32,741 1993-01-28
JP3274193A JP3278951B2 (ja) 1992-10-23 1993-01-28 オーミック電極の形成方法

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US (1) US5373175A (ko)
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Families Citing this family (11)

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Publication number Priority date Publication date Assignee Title
JPH07263372A (ja) * 1994-03-24 1995-10-13 Sharp Corp Ｉｉ−ｖｉ族化合物半導体装置およびその製造方法
JP3586293B2 (ja) * 1994-07-11 2004-11-10 ソニー株式会社 半導体発光素子
JPH0945890A (ja) * 1995-05-25 1997-02-14 Sharp Corp オーミック電極構造、半導体装置およびその製造方法
US5760423A (en) * 1996-11-08 1998-06-02 Kabushiki Kaisha Toshiba Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device
JP3854693B2 (ja) * 1996-09-30 2006-12-06 キヤノン株式会社 半導体レーザの製造方法
US5952778A (en) * 1997-03-18 1999-09-14 International Business Machines Corporation Encapsulated organic light emitting device
US6448648B1 (en) * 1997-03-27 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Metalization of electronic semiconductor devices
US6087725A (en) * 1997-09-29 2000-07-11 Matsushita Electric Industrial Co., Ltd. Low barrier ohmic contact for semiconductor light emitting device
JP3414371B2 (ja) * 2000-07-31 2003-06-09 株式会社村田製作所 弾性表面波装置及びその製造方法
JP2004170545A (ja) * 2002-11-18 2004-06-17 Nippon Petrochemicals Co Ltd 光学素子の製造方法
CN100428504C (zh) * 2003-11-06 2008-10-22 厦门市三安光电科技有限公司 一种半导体器件及其制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4098921A (en) * 1976-04-28 1978-07-04 Cutler-Hammer Tantalum-gallium arsenide schottky barrier semiconductor device
US4350990A (en) * 1979-02-28 1982-09-21 General Motors Corporation Electrode for lead-salt diodes
US4414561A (en) * 1979-09-27 1983-11-08 Bell Telephone Laboratories, Incorporated Beryllium-gold ohmic contact to a semiconductor device
EP0045644B1 (en) * 1980-08-04 1987-03-18 Santa Barbara Research Center Metallic contacts to compound semiconductor devices
US4514896A (en) * 1981-03-25 1985-05-07 At&T Bell Laboratories Method of forming current confinement channels in semiconductor devices
JPS5947790A (ja) * 1982-09-13 1984-03-17 Hitachi Ltd 半導体レ−ザ装置
JPH0658977B2 (ja) * 1984-07-16 1994-08-03 株式会社小糸製作所 半導体素子
JPH084170B2 (ja) * 1986-10-13 1996-01-17 セイコーエプソン株式会社 半導体発光素子及びその製造方法
US5187547A (en) * 1988-05-18 1993-02-16 Sanyo Electric Co., Ltd. Light emitting diode device and method for producing same
JP2632975B2 (ja) * 1988-10-31 1997-07-23 日本電信電話株式会社 ｐ型ＺｎＳｅに対するオーミック電極形成法
US5081632A (en) * 1989-01-26 1992-01-14 Hitachi, Ltd. Semiconductor emitting device
US5217539A (en) * 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
DE4021199A1 (de) * 1990-06-11 1991-12-19 Smartdiskette Gmbh In edv-einrichtungen einsteckbares element
US5045502A (en) * 1990-05-10 1991-09-03 Bell Communications Research, Inc. PdIn ohmic contact to GaAs
US5274248A (en) * 1991-06-05 1993-12-28 Matsushita Electric Industrial Co., Ltd. Light-emitting device with II-VI compounds
JP3221073B2 (ja) * 1992-06-19 2001-10-22 ソニー株式会社 発光素子

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DE69323031D1 (de) 1999-02-25
EP0594212B1 (en) 1999-01-13
TW240342B (ko) 1995-02-11
JP3278951B2 (ja) 2002-04-30
US5373175A (en) 1994-12-13
DE69323031T2 (de) 1999-07-15
KR100296182B1 (ko) 2001-10-24
EP0594212A1 (en) 1994-04-27
JPH06188524A (ja) 1994-07-08

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