DE69323031D1 - Ohmsche Elektrode, Verfahren für ihre Herstellung und lichtemittierende Vorrichtung - Google Patents
Ohmsche Elektrode, Verfahren für ihre Herstellung und lichtemittierende VorrichtungInfo
- Publication number
- DE69323031D1 DE69323031D1 DE69323031T DE69323031T DE69323031D1 DE 69323031 D1 DE69323031 D1 DE 69323031D1 DE 69323031 T DE69323031 T DE 69323031T DE 69323031 T DE69323031 T DE 69323031T DE 69323031 D1 DE69323031 D1 DE 69323031D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- light
- emitting device
- ohmic electrode
- ohmic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30960392 | 1992-10-23 | ||
JP3274193A JP3278951B2 (ja) | 1992-10-23 | 1993-01-28 | オーミック電極の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69323031D1 true DE69323031D1 (de) | 1999-02-25 |
DE69323031T2 DE69323031T2 (de) | 1999-07-15 |
Family
ID=26371319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69323031T Expired - Fee Related DE69323031T2 (de) | 1992-10-23 | 1993-10-22 | Ohmsche Elektrode, Verfahren für ihre Herstellung und lichtemittierende Vorrichtung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5373175A (de) |
EP (1) | EP0594212B1 (de) |
JP (1) | JP3278951B2 (de) |
KR (1) | KR100296182B1 (de) |
DE (1) | DE69323031T2 (de) |
TW (1) | TW240342B (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263372A (ja) * | 1994-03-24 | 1995-10-13 | Sharp Corp | Ii−vi族化合物半導体装置およびその製造方法 |
JP3586293B2 (ja) * | 1994-07-11 | 2004-11-10 | ソニー株式会社 | 半導体発光素子 |
JPH0945890A (ja) * | 1995-05-25 | 1997-02-14 | Sharp Corp | オーミック電極構造、半導体装置およびその製造方法 |
US5760423A (en) * | 1996-11-08 | 1998-06-02 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device, electrode of the same device and method of manufacturing the same device |
JP3854693B2 (ja) * | 1996-09-30 | 2006-12-06 | キヤノン株式会社 | 半導体レーザの製造方法 |
US5952778A (en) * | 1997-03-18 | 1999-09-14 | International Business Machines Corporation | Encapsulated organic light emitting device |
US6448648B1 (en) * | 1997-03-27 | 2002-09-10 | The United States Of America As Represented By The Secretary Of The Navy | Metalization of electronic semiconductor devices |
US6087725A (en) * | 1997-09-29 | 2000-07-11 | Matsushita Electric Industrial Co., Ltd. | Low barrier ohmic contact for semiconductor light emitting device |
JP3414371B2 (ja) * | 2000-07-31 | 2003-06-09 | 株式会社村田製作所 | 弾性表面波装置及びその製造方法 |
JP2004170545A (ja) * | 2002-11-18 | 2004-06-17 | Nippon Petrochemicals Co Ltd | 光学素子の製造方法 |
CN100428504C (zh) * | 2003-11-06 | 2008-10-22 | 厦门市三安光电科技有限公司 | 一种半导体器件及其制备方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4098921A (en) * | 1976-04-28 | 1978-07-04 | Cutler-Hammer | Tantalum-gallium arsenide schottky barrier semiconductor device |
US4350990A (en) * | 1979-02-28 | 1982-09-21 | General Motors Corporation | Electrode for lead-salt diodes |
US4414561A (en) * | 1979-09-27 | 1983-11-08 | Bell Telephone Laboratories, Incorporated | Beryllium-gold ohmic contact to a semiconductor device |
EP0045644B1 (de) * | 1980-08-04 | 1987-03-18 | Santa Barbara Research Center | Metallische Kontakte für Mischhalbleiteranordnungen |
US4514896A (en) * | 1981-03-25 | 1985-05-07 | At&T Bell Laboratories | Method of forming current confinement channels in semiconductor devices |
JPS5947790A (ja) * | 1982-09-13 | 1984-03-17 | Hitachi Ltd | 半導体レ−ザ装置 |
JPH0658977B2 (ja) * | 1984-07-16 | 1994-08-03 | 株式会社小糸製作所 | 半導体素子 |
JPH084170B2 (ja) * | 1986-10-13 | 1996-01-17 | セイコーエプソン株式会社 | 半導体発光素子及びその製造方法 |
US5187547A (en) * | 1988-05-18 | 1993-02-16 | Sanyo Electric Co., Ltd. | Light emitting diode device and method for producing same |
JP2632975B2 (ja) * | 1988-10-31 | 1997-07-23 | 日本電信電話株式会社 | p型ZnSeに対するオーミック電極形成法 |
US5081632A (en) * | 1989-01-26 | 1992-01-14 | Hitachi, Ltd. | Semiconductor emitting device |
US5217539A (en) * | 1991-09-05 | 1993-06-08 | The Boeing Company | III-V solar cells and doping processes |
DE4021199A1 (de) * | 1990-06-11 | 1991-12-19 | Smartdiskette Gmbh | In edv-einrichtungen einsteckbares element |
US5045502A (en) * | 1990-05-10 | 1991-09-03 | Bell Communications Research, Inc. | PdIn ohmic contact to GaAs |
US5274248A (en) * | 1991-06-05 | 1993-12-28 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device with II-VI compounds |
JP3221073B2 (ja) * | 1992-06-19 | 2001-10-22 | ソニー株式会社 | 発光素子 |
-
1993
- 1993-01-28 JP JP3274193A patent/JP3278951B2/ja not_active Expired - Fee Related
- 1993-10-14 KR KR1019930021265A patent/KR100296182B1/ko not_active IP Right Cessation
- 1993-10-18 US US08/136,870 patent/US5373175A/en not_active Expired - Lifetime
- 1993-10-20 TW TW082108721A patent/TW240342B/zh not_active IP Right Cessation
- 1993-10-22 EP EP93117183A patent/EP0594212B1/de not_active Expired - Lifetime
- 1993-10-22 DE DE69323031T patent/DE69323031T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR940010435A (ko) | 1994-05-26 |
EP0594212B1 (de) | 1999-01-13 |
EP0594212A1 (de) | 1994-04-27 |
JP3278951B2 (ja) | 2002-04-30 |
US5373175A (en) | 1994-12-13 |
KR100296182B1 (ko) | 2001-10-24 |
TW240342B (de) | 1995-02-11 |
DE69323031T2 (de) | 1999-07-15 |
JPH06188524A (ja) | 1994-07-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |