JP3142335B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置

Info

Publication number
JP3142335B2
JP3142335B2 JP34336391A JP34336391A JP3142335B2 JP 3142335 B2 JP3142335 B2 JP 3142335B2 JP 34336391 A JP34336391 A JP 34336391A JP 34336391 A JP34336391 A JP 34336391A JP 3142335 B2 JP3142335 B2 JP 3142335B2
Authority
JP
Japan
Prior art keywords
control data
data
memory cell
bit line
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP34336391A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05144277A (ja
Inventor
智晴 田中
義幸 田中
寛 中村
秀子 大平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to US07/948,002 priority Critical patent/US5357462A/en
Priority to KR1019920017397A priority patent/KR950003348B1/ko
Priority to DE4232025A priority patent/DE4232025C2/de
Publication of JPH05144277A publication Critical patent/JPH05144277A/ja
Priority to US08/277,514 priority patent/US5566105A/en
Priority to US08/473,739 priority patent/US5627782A/en
Priority to US08/749,935 priority patent/US5768190A/en
Priority to US09/096,466 priority patent/US6026025A/en
Priority to US09/472,152 priority patent/US6285591B1/en
Application granted granted Critical
Publication of JP3142335B2 publication Critical patent/JP3142335B2/ja
Priority to US09/893,544 priority patent/US6477087B2/en
Priority to US10/101,213 priority patent/US6574147B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells

Landscapes

  • Read Only Memory (AREA)
JP34336391A 1991-09-24 1991-12-25 不揮発性半導体記憶装置 Expired - Lifetime JP3142335B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
US07/948,002 US5357462A (en) 1991-09-24 1992-09-21 Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
DE4232025A DE4232025C2 (de) 1991-09-24 1992-09-24 Elektrisch löschbarer und programmierbarer nichtflüchtiger Halbleiterspeicher mit automatischem Schreibprüfungs-Controller
KR1019920017397A KR950003348B1 (ko) 1991-09-24 1992-09-24 자동 기입-검증 제어기를 갖는 전기적으로 소거가능하고 프로그램가능한 불휘발성 반도체 메모리
US08/277,514 US5566105A (en) 1991-09-24 1994-07-19 Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US08/473,739 US5627782A (en) 1991-09-24 1995-06-07 Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US08/749,935 US5768190A (en) 1991-09-24 1996-11-14 Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US09/096,466 US6026025A (en) 1991-09-24 1998-06-12 Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US09/472,152 US6285591B1 (en) 1991-09-24 1999-12-27 Method for programming an electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US09/893,544 US6477087B2 (en) 1991-09-24 2001-06-29 Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US10/101,213 US6574147B2 (en) 1991-09-24 2002-03-20 Electrically erasable and programmable nonvolatile semiconductor memory with automatic write-verify controller

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24374391 1991-09-24
JP3-243743 1991-09-24

Publications (2)

Publication Number Publication Date
JPH05144277A JPH05144277A (ja) 1993-06-11
JP3142335B2 true JP3142335B2 (ja) 2001-03-07

Family

ID=17108331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34336391A Expired - Lifetime JP3142335B2 (ja) 1991-09-24 1991-12-25 不揮発性半導体記憶装置

Country Status (2)

Country Link
JP (1) JP3142335B2 (ko)
KR (1) KR950003348B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8238138B2 (en) 2009-08-03 2012-08-07 Sony Corporation Semiconductor memory device and its operation method

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2922116B2 (ja) * 1993-09-02 1999-07-19 株式会社東芝 半導体記憶装置
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
JP3202498B2 (ja) * 1994-03-15 2001-08-27 株式会社東芝 半導体記憶装置
GB9423036D0 (en) * 1994-11-15 1995-01-04 Sgs Thomson Microelectronics An integrated circuit memory device
JPH0991978A (ja) * 1995-09-29 1997-04-04 Hitachi Ltd 半導体不揮発性記憶装置およびそれを用いたコンピュータシステム
JP3615009B2 (ja) * 1997-02-12 2005-01-26 株式会社東芝 半導体記憶装置
JP3138688B2 (ja) 1998-07-24 2001-02-26 日本電気アイシーマイコンシステム株式会社 不揮発性半導体記憶装置及びプログラムベリファイ方法
US6480419B2 (en) 2001-02-22 2002-11-12 Samsung Electronics Co., Ltd. Bit line setup and discharge circuit for programming non-volatile memory
JP3940570B2 (ja) * 2001-07-06 2007-07-04 株式会社東芝 半導体記憶装置
JP2006252624A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体記憶装置
KR101541812B1 (ko) 2008-11-19 2015-08-06 삼성전자주식회사 비휘발성 메모리 장치
JP5282607B2 (ja) 2009-02-26 2013-09-04 ソニー株式会社 抵抗変化型メモリデバイスおよびその動作方法
US8565020B2 (en) 2010-04-14 2013-10-22 Kabushiki Kaisha Toshiba Semiconductor memory device
JP5684161B2 (ja) * 2012-01-26 2015-03-11 株式会社東芝 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8238138B2 (en) 2009-08-03 2012-08-07 Sony Corporation Semiconductor memory device and its operation method

Also Published As

Publication number Publication date
JPH05144277A (ja) 1993-06-11
KR950003348B1 (ko) 1995-04-10
KR930006738A (ko) 1993-04-21

Similar Documents

Publication Publication Date Title
US6026025A (en) Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US7379333B2 (en) Page-buffer and non-volatile semiconductor memory including page buffer
KR0139877B1 (ko) 불휘발성 반도체 기억장치
JP3170038B2 (ja) 不揮発性半導体記憶装置
JP3142335B2 (ja) 不揮発性半導体記憶装置
JP3202498B2 (ja) 半導体記憶装置
US7339833B2 (en) Non-volatile semiconductor memory device
JPH10302489A (ja) 不揮発性半導体記憶装置
JP3204666B2 (ja) 不揮発性半導体記憶装置
US6134157A (en) Nonvolatile semiconductor memory device capable of preventing data from being written in error
JP3662725B2 (ja) 単一ビットセル及び多量ビットセル動作の同時的な遂行が可能な不揮発性半導体メモリ装置
US20160322111A1 (en) High-speed readable semiconductor storage device
JP3576763B2 (ja) 半導体記憶装置
JP6439026B1 (ja) 半導体記憶装置
JP3615041B2 (ja) 不揮発性半導体記憶装置
JP3225024B2 (ja) 不揮発性半導体記憶装置
JP3356439B2 (ja) 不揮発性半導体メモリシステム
JP2004030897A (ja) 半導体記憶装置
JPH1196778A (ja) 不揮発性半導体記憶装置
JPH06120454A (ja) 不揮発性半導体記憶装置
JPH09251791A (ja) 不揮発性半導体記憶装置
JPH0982096A (ja) 不揮発性半導体記憶装置
JPH0676587A (ja) 不揮発性半導体記憶装置

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071222

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081222

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091222

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091222

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101222

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111222

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121222

Year of fee payment: 12

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121222

Year of fee payment: 12