JP3074366B2 - 処理装置 - Google Patents
処理装置Info
- Publication number
- JP3074366B2 JP3074366B2 JP05056424A JP5642493A JP3074366B2 JP 3074366 B2 JP3074366 B2 JP 3074366B2 JP 05056424 A JP05056424 A JP 05056424A JP 5642493 A JP5642493 A JP 5642493A JP 3074366 B2 JP3074366 B2 JP 3074366B2
- Authority
- JP
- Japan
- Prior art keywords
- processing
- processing liquid
- concentration
- tank
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012545 processing Methods 0.000 title claims description 369
- 239000007788 liquid Substances 0.000 claims description 169
- 238000001514 detection method Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 21
- 238000011282 treatment Methods 0.000 claims description 17
- 238000011109 contamination Methods 0.000 claims description 9
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 description 52
- 235000012431 wafers Nutrition 0.000 description 39
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 23
- 229910021529 ammonia Inorganic materials 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 238000012546 transfer Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004433 infrared transmission spectrum Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05056424A JP3074366B2 (ja) | 1993-02-22 | 1993-02-22 | 処理装置 |
KR1019940003148A KR100258830B1 (ko) | 1993-02-22 | 1994-02-22 | 처리장치 및 처리방법 |
TW083101760A TW283796B (ko) | 1993-02-22 | 1994-03-01 | |
US08/753,032 US5722441A (en) | 1993-02-22 | 1996-11-19 | Electronic device process apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05056424A JP3074366B2 (ja) | 1993-02-22 | 1993-02-22 | 処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06252122A JPH06252122A (ja) | 1994-09-09 |
JP3074366B2 true JP3074366B2 (ja) | 2000-08-07 |
Family
ID=13026722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP05056424A Expired - Fee Related JP3074366B2 (ja) | 1993-02-22 | 1993-02-22 | 処理装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5722441A (ko) |
JP (1) | JP3074366B2 (ko) |
KR (1) | KR100258830B1 (ko) |
TW (1) | TW283796B (ko) |
Families Citing this family (66)
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---|---|---|---|---|
JP3093975B2 (ja) * | 1996-07-02 | 2000-10-03 | 株式会社平間理化研究所 | レジスト剥離液管理装置 |
US5975097A (en) * | 1996-09-02 | 1999-11-02 | Tokyo Electron Limited | Processing apparatus for target processing substrate |
JP3473662B2 (ja) * | 1996-10-09 | 2003-12-08 | 三菱住友シリコン株式会社 | ウェット式洗浄装置 |
US5922136A (en) * | 1997-03-28 | 1999-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-CMP cleaner apparatus and method |
US7556767B2 (en) * | 1997-12-17 | 2009-07-07 | Ethicon, Inc. | Integrated washing and sterilization process |
US7246627B2 (en) * | 1997-06-11 | 2007-07-24 | Ethicon, Inc. | Monitoring of cleaning process |
US6394111B1 (en) | 1997-06-11 | 2002-05-28 | Ethicon, Inc. | Detection of cleanliness of a medical device during a washing process |
US20050163655A1 (en) * | 1997-06-11 | 2005-07-28 | Szu-Min Lin | Integrated washing and sterilization process |
JPH1167712A (ja) * | 1997-08-20 | 1999-03-09 | Sony Corp | 薬液処理装置およびその流量制御方法 |
US6158447A (en) * | 1997-09-09 | 2000-12-12 | Tokyo Electron Limited | Cleaning method and cleaning equipment |
US6089242A (en) * | 1998-02-10 | 2000-07-18 | Babson Bros. Co. | Dairy harvesting facility wash system |
JP2959763B1 (ja) * | 1998-01-13 | 1999-10-06 | 島田理化工業株式会社 | ウェーハ洗浄装置 |
US6241827B1 (en) * | 1998-02-17 | 2001-06-05 | Tokyo Electron Limited | Method for cleaning a workpiece |
DE19815039A1 (de) * | 1998-03-02 | 1999-09-16 | Mostafa Sabet | Verfahren zum Wechseln eines in einem Behandlungsbecken enthaltenen Behandlungsmediums und Anlage zur Ausführung des Verfahrens |
US20070070803A1 (en) * | 1998-04-16 | 2007-03-29 | Urquhart Karl J | Point-of-use process control blender systems and corresponding methods |
US7980753B2 (en) * | 1998-04-16 | 2011-07-19 | Air Liquide Electronics U.S. Lp | Systems and methods for managing fluids in a processing environment using a liquid ring pump and reclamation system |
US7871249B2 (en) * | 1998-04-16 | 2011-01-18 | Air Liquide Electronics U.S. Lp | Systems and methods for managing fluids using a liquid ring pump |
US20070119816A1 (en) * | 1998-04-16 | 2007-05-31 | Urquhart Karl J | Systems and methods for reclaiming process fluids in a processing environment |
US6273099B1 (en) * | 1998-07-01 | 2001-08-14 | Taiwan Semiconductor Manufacturing Company | Simplified method for cleaning silicon wafers after application of laser marks |
KR100623174B1 (ko) * | 1998-07-10 | 2006-12-04 | 삼성전자주식회사 | 반도체 장치 제조용 케미컬 재순환 장치 |
US6354310B1 (en) * | 1998-11-12 | 2002-03-12 | General Electric Company | Apparatus and process to clean and strip coatings from hardware |
JP3212958B2 (ja) * | 1998-12-11 | 2001-09-25 | 九州日本電気株式会社 | 薬液濃度制御装置 |
KR20000050397A (ko) * | 1999-01-08 | 2000-08-05 | 윤종용 | 반도체 세정액 농도 제어장치 및 방법 |
JP3297650B2 (ja) * | 1999-04-23 | 2002-07-02 | 大日本スクリーン製造株式会社 | 半導体処理装置 |
JP4484980B2 (ja) * | 1999-05-20 | 2010-06-16 | 株式会社ルネサステクノロジ | フォトマスクの洗浄方法、洗浄装置およびフォトマスクの洗浄液 |
JP3148201B2 (ja) * | 1999-06-03 | 2001-03-19 | 株式会社半導体先端テクノロジーズ | パーティクル量評価装置ならびにディップ式洗浄システムおよびパーティクル付着量評価方法 |
US6415803B1 (en) * | 1999-10-06 | 2002-07-09 | Z Cap, L.L.C. | Method and apparatus for semiconductor wafer cleaning with reuse of chemicals |
JP3515934B2 (ja) * | 2000-01-19 | 2004-04-05 | 浩平 澤 | ドライクリーニング装置及びドライクリーニング方法 |
JP3376985B2 (ja) * | 2000-02-25 | 2003-02-17 | 日本電気株式会社 | ウェット処理装置 |
JP4590700B2 (ja) * | 2000-07-14 | 2010-12-01 | ソニー株式会社 | 基板洗浄方法及び基板洗浄装置 |
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JP4678665B2 (ja) * | 2001-11-15 | 2011-04-27 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
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JP6118739B2 (ja) * | 2014-01-31 | 2017-04-19 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記録したコンピュータ読み取り可能な記録媒体 |
JP6308141B2 (ja) * | 2015-02-03 | 2018-04-11 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法、及び記憶媒体 |
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JP6457104B2 (ja) | 2015-09-29 | 2019-01-23 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法及びプログラム |
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US11229856B2 (en) * | 2017-09-29 | 2022-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching solution recycling system and method for wafer etching apparatus |
JP6548787B2 (ja) * | 2018-07-06 | 2019-07-24 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP6552687B2 (ja) * | 2018-07-09 | 2019-07-31 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP7101083B2 (ja) * | 2018-08-23 | 2022-07-14 | 東京エレクトロン株式会社 | 基板液処理装置、基板液処理方法および記憶媒体 |
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US5275184A (en) * | 1990-10-19 | 1994-01-04 | Dainippon Screen Mfg. Co., Ltd. | Apparatus and system for treating surface of a wafer by dipping the same in a treatment solution and a gate device for chemical agent used in the apparatus and the system |
JP3075290B2 (ja) * | 1991-02-28 | 2000-08-14 | 三菱瓦斯化学株式会社 | 半導体基板の洗浄液 |
US5242468A (en) * | 1991-03-19 | 1993-09-07 | Startec Ventures, Inc. | Manufacture of high precision electronic components with ultra-high purity liquids |
US5396178A (en) * | 1992-05-18 | 1995-03-07 | Dober Chemical Corporation | Apparatus and method for determining that equipment is clean |
US5308400A (en) * | 1992-09-02 | 1994-05-03 | United Microelectronics Corporation | Room temperature wafer cleaning process |
US5364510A (en) * | 1993-02-12 | 1994-11-15 | Sematech, Inc. | Scheme for bath chemistry measurement and control for improved semiconductor wet processing |
-
1993
- 1993-02-22 JP JP05056424A patent/JP3074366B2/ja not_active Expired - Fee Related
-
1994
- 1994-02-22 KR KR1019940003148A patent/KR100258830B1/ko not_active IP Right Cessation
- 1994-03-01 TW TW083101760A patent/TW283796B/zh not_active IP Right Cessation
-
1996
- 1996-11-19 US US08/753,032 patent/US5722441A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5722441A (en) | 1998-03-03 |
TW283796B (ko) | 1996-08-21 |
KR940020502A (ko) | 1994-09-16 |
KR100258830B1 (ko) | 2000-06-15 |
JPH06252122A (ja) | 1994-09-09 |
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