JP2950999B2 - 半導体チップ上で高電圧をスイッチングするためのｍｏｓ回路装置 - Google Patents
半導体チップ上で高電圧をスイッチングするためのｍｏｓ回路装置Info
- Publication number
- JP2950999B2 JP2950999B2 JP8522534A JP52253496A JP2950999B2 JP 2950999 B2 JP2950999 B2 JP 2950999B2 JP 8522534 A JP8522534 A JP 8522534A JP 52253496 A JP52253496 A JP 52253496A JP 2950999 B2 JP2950999 B2 JP 2950999B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- terminal
- voltage
- load section
- circuit device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000000903 blocking effect Effects 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/10—Modifications for increasing the maximum permissible switched voltage
- H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356017—Bistable circuits using additional transistors in the input circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
- H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
- H03K3/356147—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19502116.9 | 1995-01-24 | ||
| DE19502116A DE19502116C2 (de) | 1995-01-24 | 1995-01-24 | MOS-Schaltungsanordnung zum Schalten hoher Spannungen auf einem Halbleiterchip |
| PCT/DE1995/001875 WO1996023356A1 (de) | 1995-01-24 | 1995-12-29 | Mos-schaltungsanordnung zum schalten hoher spannungen auf einem halbleiterchip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10502786A JPH10502786A (ja) | 1998-03-10 |
| JP2950999B2 true JP2950999B2 (ja) | 1999-09-20 |
Family
ID=7752210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8522534A Expired - Fee Related JP2950999B2 (ja) | 1995-01-24 | 1995-12-29 | 半導体チップ上で高電圧をスイッチングするためのｍｏｓ回路装置 |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US5925905A (enExample) |
| EP (1) | EP0806083B1 (enExample) |
| JP (1) | JP2950999B2 (enExample) |
| KR (1) | KR100358255B1 (enExample) |
| CN (1) | CN1096146C (enExample) |
| AT (1) | ATE172068T1 (enExample) |
| DE (2) | DE19502116C2 (enExample) |
| ES (1) | ES2123300T3 (enExample) |
| IN (1) | IN186226B (enExample) |
| RU (1) | RU2137294C1 (enExample) |
| UA (1) | UA42048C2 (enExample) |
| WO (1) | WO1996023356A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19519774C1 (de) | 1995-05-30 | 1996-10-24 | Siemens Ag | Verfahren zur selektiven Programmierung eines nicht-flüchtigen Speichers |
| JP3386141B2 (ja) * | 1997-01-24 | 2003-03-17 | シーメンス アクチエンゲゼルシヤフト | 負電圧生成用回路装置 |
| FR2776144B1 (fr) * | 1998-03-13 | 2000-07-13 | Sgs Thomson Microelectronics | Circuit de commutation de signaux analogiques d'amplitudes superieures a la tension d'alimentation |
| US6288603B1 (en) | 2000-06-16 | 2001-09-11 | Stmicroelectronics S.R.L. | High-voltage bidirectional switch made using high-voltage MOS transistors |
| KR100393201B1 (ko) * | 2001-04-16 | 2003-07-31 | 페어차일드코리아반도체 주식회사 | 낮은 온 저항과 높은 브레이크다운 전압을 갖는 고전압수평형 디모스 트랜지스터 |
| KR100413590B1 (ko) * | 2001-10-16 | 2004-01-07 | 월드탑텍(주) | 소스전압 극성절환장치 |
| JP3928938B2 (ja) * | 2002-05-28 | 2007-06-13 | シャープ株式会社 | 電圧変換回路および半導体装置 |
| DE10246083B3 (de) * | 2002-09-27 | 2004-03-04 | Alpha Microelectronics Gmbh | Schaltungsanordnung zur Überbrückung hoher Spannungen mit einem Schaltsignal |
| US6914791B1 (en) | 2002-11-06 | 2005-07-05 | Halo Lsi, Inc. | High efficiency triple well charge pump circuit |
| US7829928B2 (en) * | 2006-06-26 | 2010-11-09 | System General Corp. | Semiconductor structure of a high side driver and method for manufacturing the same |
| US8723578B1 (en) | 2012-12-14 | 2014-05-13 | Palo Alto Research Center Incorporated | Pulse generator circuit |
| US9793881B2 (en) * | 2013-08-05 | 2017-10-17 | Samsung Electronics Co., Ltd. | Flip-flop with zero-delay bypass mux |
| CN104579256B (zh) * | 2014-12-23 | 2017-05-24 | 昆山锐芯微电子有限公司 | 电平切换电路和电平切换装置 |
| RU2601172C2 (ru) * | 2015-04-03 | 2016-10-27 | Акционерное Общество "Научно-Исследовательский Институт Микроэлектронной Аппаратуры "Прогресс" | Переключатель с высокой изоляцией |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1236069A (en) * | 1967-11-06 | 1971-06-16 | Hitachi Ltd | A bistable driving circuit |
| JPS6032912B2 (ja) * | 1979-09-13 | 1985-07-31 | 株式会社東芝 | Ｃｍｏｓセンスアンプ回路 |
| US5077691A (en) * | 1989-10-23 | 1991-12-31 | Advanced Micro Devices, Inc. | Flash EEPROM array with negative gate voltage erase operation |
| IT1239781B (it) * | 1990-05-08 | 1993-11-15 | Texas Instruments Italia Spa | Circuito e metodo per commutare selettivamente tensioni negative in circuiti integrati cmos |
| JP2905666B2 (ja) * | 1992-05-25 | 1999-06-14 | 三菱電機株式会社 | 半導体装置における内部電圧発生回路および不揮発性半導体記憶装置 |
| US5335200A (en) * | 1993-01-05 | 1994-08-02 | Texas Instruments Incorporated | High voltage negative charge pump with low voltage CMOS transistors |
-
1995
- 1995-01-24 DE DE19502116A patent/DE19502116C2/de not_active Expired - Fee Related
- 1995-12-26 IN IN1725CA1995 patent/IN186226B/en unknown
- 1995-12-29 AT AT95942654T patent/ATE172068T1/de not_active IP Right Cessation
- 1995-12-29 JP JP8522534A patent/JP2950999B2/ja not_active Expired - Fee Related
- 1995-12-29 RU RU97114100A patent/RU2137294C1/ru not_active IP Right Cessation
- 1995-12-29 KR KR1019970704993A patent/KR100358255B1/ko not_active Expired - Fee Related
- 1995-12-29 UA UA97073951A patent/UA42048C2/uk unknown
- 1995-12-29 CN CN95197783A patent/CN1096146C/zh not_active Expired - Lifetime
- 1995-12-29 DE DE59503885T patent/DE59503885D1/de not_active Expired - Lifetime
- 1995-12-29 WO PCT/DE1995/001875 patent/WO1996023356A1/de not_active Ceased
- 1995-12-29 ES ES95942654T patent/ES2123300T3/es not_active Expired - Lifetime
- 1995-12-29 EP EP95942654A patent/EP0806083B1/de not_active Expired - Lifetime
-
1997
- 1997-07-24 US US08/899,746 patent/US5925905A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0806083A1 (de) | 1997-11-12 |
| KR19980701601A (ko) | 1998-05-15 |
| US5925905A (en) | 1999-07-20 |
| EP0806083B1 (de) | 1998-10-07 |
| DE19502116A1 (de) | 1996-08-08 |
| KR100358255B1 (ko) | 2003-01-15 |
| UA42048C2 (uk) | 2001-10-15 |
| CN1178040A (zh) | 1998-04-01 |
| DE19502116C2 (de) | 1998-07-23 |
| RU2137294C1 (ru) | 1999-09-10 |
| ES2123300T3 (es) | 1999-01-01 |
| DE59503885D1 (de) | 1998-11-12 |
| ATE172068T1 (de) | 1998-10-15 |
| WO1996023356A1 (de) | 1996-08-01 |
| JPH10502786A (ja) | 1998-03-10 |
| CN1096146C (zh) | 2002-12-11 |
| IN186226B (enExample) | 2001-07-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |