DE19502116C2 - MOS-Schaltungsanordnung zum Schalten hoher Spannungen auf einem Halbleiterchip - Google Patents

MOS-Schaltungsanordnung zum Schalten hoher Spannungen auf einem Halbleiterchip

Info

Publication number
DE19502116C2
DE19502116C2 DE19502116A DE19502116A DE19502116C2 DE 19502116 C2 DE19502116 C2 DE 19502116C2 DE 19502116 A DE19502116 A DE 19502116A DE 19502116 A DE19502116 A DE 19502116A DE 19502116 C2 DE19502116 C2 DE 19502116C2
Authority
DE
Germany
Prior art keywords
transistor
connection
terminal
gate
load path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19502116A
Other languages
German (de)
English (en)
Other versions
DE19502116A1 (de
Inventor
Armin Hanneberg
Georg Dr Rer Nat Tempel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to DE19502116A priority Critical patent/DE19502116C2/de
Priority to IN1725CA1995 priority patent/IN186226B/en
Priority to EP95942654A priority patent/EP0806083B1/de
Priority to UA97073951A priority patent/UA42048C2/uk
Priority to CN95197783A priority patent/CN1096146C/zh
Priority to JP8522534A priority patent/JP2950999B2/ja
Priority to AT95942654T priority patent/ATE172068T1/de
Priority to DE59503885T priority patent/DE59503885D1/de
Priority to ES95942654T priority patent/ES2123300T3/es
Priority to RU97114100A priority patent/RU2137294C1/ru
Priority to KR1019970704993A priority patent/KR100358255B1/ko
Priority to PCT/DE1995/001875 priority patent/WO1996023356A1/de
Publication of DE19502116A1 publication Critical patent/DE19502116A1/de
Priority to US08/899,746 priority patent/US5925905A/en
Application granted granted Critical
Publication of DE19502116C2 publication Critical patent/DE19502116C2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/356147—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19502116A 1995-01-24 1995-01-24 MOS-Schaltungsanordnung zum Schalten hoher Spannungen auf einem Halbleiterchip Expired - Fee Related DE19502116C2 (de)

Priority Applications (13)

Application Number Priority Date Filing Date Title
DE19502116A DE19502116C2 (de) 1995-01-24 1995-01-24 MOS-Schaltungsanordnung zum Schalten hoher Spannungen auf einem Halbleiterchip
IN1725CA1995 IN186226B (enExample) 1995-01-24 1995-12-26
RU97114100A RU2137294C1 (ru) 1995-01-24 1995-12-29 Моп-устройство включения высоких напряжений на полупроводниковой интегральной схеме
CN95197783A CN1096146C (zh) 1995-01-24 1995-12-29 在半导体芯片上用于转换高电压的mos电路装置
JP8522534A JP2950999B2 (ja) 1995-01-24 1995-12-29 半導体チップ上で高電圧をスイッチングするためのｍｏｓ回路装置
AT95942654T ATE172068T1 (de) 1995-01-24 1995-12-29 Mos-schaltungsanordnung zum schalten hoher spannungen auf einem halbleiterchip
EP95942654A EP0806083B1 (de) 1995-01-24 1995-12-29 Mos-schaltungsanordnung zum schalten hoher spannungen auf einem halbleiterchip
ES95942654T ES2123300T3 (es) 1995-01-24 1995-12-29 Disposicion de circuito mos para la conmutacion de altas tensiones en un chip de semiconductores.
UA97073951A UA42048C2 (uk) 1995-01-24 1995-12-29 Мон-пристрій включення високих напруг на напівпровідниковій інтегральній схемі
KR1019970704993A KR100358255B1 (ko) 1995-01-24 1995-12-29 반도체칩상에서고전압을스위칭하기위한mos회로장치
PCT/DE1995/001875 WO1996023356A1 (de) 1995-01-24 1995-12-29 Mos-schaltungsanordnung zum schalten hoher spannungen auf einem halbleiterchip
DE59503885T DE59503885D1 (de) 1995-01-24 1995-12-29 Mos-schaltungsanordnung zum schalten hoher spannungen auf einem halbleiterchip
US08/899,746 US5925905A (en) 1995-01-24 1997-07-24 MOS circuit configuration for switching high voltages on a semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19502116A DE19502116C2 (de) 1995-01-24 1995-01-24 MOS-Schaltungsanordnung zum Schalten hoher Spannungen auf einem Halbleiterchip

Publications (2)

Publication Number Publication Date
DE19502116A1 DE19502116A1 (de) 1996-08-08
DE19502116C2 true DE19502116C2 (de) 1998-07-23

Family

ID=7752210

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19502116A Expired - Fee Related DE19502116C2 (de) 1995-01-24 1995-01-24 MOS-Schaltungsanordnung zum Schalten hoher Spannungen auf einem Halbleiterchip
DE59503885T Expired - Lifetime DE59503885D1 (de) 1995-01-24 1995-12-29 Mos-schaltungsanordnung zum schalten hoher spannungen auf einem halbleiterchip

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59503885T Expired - Lifetime DE59503885D1 (de) 1995-01-24 1995-12-29 Mos-schaltungsanordnung zum schalten hoher spannungen auf einem halbleiterchip

Country Status (12)

Country Link
US (1) US5925905A (enExample)
EP (1) EP0806083B1 (enExample)
JP (1) JP2950999B2 (enExample)
KR (1) KR100358255B1 (enExample)
CN (1) CN1096146C (enExample)
AT (1) ATE172068T1 (enExample)
DE (2) DE19502116C2 (enExample)
ES (1) ES2123300T3 (enExample)
IN (1) IN186226B (enExample)
RU (1) RU2137294C1 (enExample)
UA (1) UA42048C2 (enExample)
WO (1) WO1996023356A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10246083B3 (de) * 2002-09-27 2004-03-04 Alpha Microelectronics Gmbh Schaltungsanordnung zur Überbrückung hoher Spannungen mit einem Schaltsignal

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19519774C1 (de) 1995-05-30 1996-10-24 Siemens Ag Verfahren zur selektiven Programmierung eines nicht-flüchtigen Speichers
EP0954896B1 (de) * 1997-01-24 2001-08-16 Infineon Technologies AG Schaltungsanordnung zum erzeugen negativer spannungen
FR2776144B1 (fr) * 1998-03-13 2000-07-13 Sgs Thomson Microelectronics Circuit de commutation de signaux analogiques d'amplitudes superieures a la tension d'alimentation
US6288603B1 (en) 2000-06-16 2001-09-11 Stmicroelectronics S.R.L. High-voltage bidirectional switch made using high-voltage MOS transistors
KR100393201B1 (ko) * 2001-04-16 2003-07-31 페어차일드코리아반도체 주식회사 낮은 온 저항과 높은 브레이크다운 전압을 갖는 고전압수평형 디모스 트랜지스터
KR100413590B1 (ko) * 2001-10-16 2004-01-07 월드탑텍(주) 소스전압 극성절환장치
JP3928938B2 (ja) * 2002-05-28 2007-06-13 シャープ株式会社 電圧変換回路および半導体装置
US6914791B1 (en) 2002-11-06 2005-07-05 Halo Lsi, Inc. High efficiency triple well charge pump circuit
US7829928B2 (en) * 2006-06-26 2010-11-09 System General Corp. Semiconductor structure of a high side driver and method for manufacturing the same
US8723578B1 (en) * 2012-12-14 2014-05-13 Palo Alto Research Center Incorporated Pulse generator circuit
US9793881B2 (en) * 2013-08-05 2017-10-17 Samsung Electronics Co., Ltd. Flip-flop with zero-delay bypass mux
CN104579256B (zh) * 2014-12-23 2017-05-24 昆山锐芯微电子有限公司 电平切换电路和电平切换装置
RU2601172C2 (ru) * 2015-04-03 2016-10-27 Акционерное Общество "Научно-Исследовательский Институт Микроэлектронной Аппаратуры "Прогресс" Переключатель с высокой изоляцией

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1807105B2 (de) * 1967-11-06 1970-03-26 Hitachi Ltd., Tokio Treiberschaltung für Flip-Flops

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6032912B2 (ja) * 1979-09-13 1985-07-31 株式会社東芝 Ｃｍｏｓセンスアンプ回路
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
IT1239781B (it) * 1990-05-08 1993-11-15 Texas Instruments Italia Spa Circuito e metodo per commutare selettivamente tensioni negative in circuiti integrati cmos
JP2905666B2 (ja) * 1992-05-25 1999-06-14 三菱電機株式会社 半導体装置における内部電圧発生回路および不揮発性半導体記憶装置
US5335200A (en) * 1993-01-05 1994-08-02 Texas Instruments Incorporated High voltage negative charge pump with low voltage CMOS transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1807105B2 (de) * 1967-11-06 1970-03-26 Hitachi Ltd., Tokio Treiberschaltung für Flip-Flops

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NAKAYAMA, T. u.a.: A 60ns 16Mb Flash EEPROM with Program and Erase Sequence Controller, in: 1991 IEEE International Solid-State Circuits Conference, S.260,261,326 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10246083B3 (de) * 2002-09-27 2004-03-04 Alpha Microelectronics Gmbh Schaltungsanordnung zur Überbrückung hoher Spannungen mit einem Schaltsignal

Also Published As

Publication number Publication date
WO1996023356A1 (de) 1996-08-01
ATE172068T1 (de) 1998-10-15
RU2137294C1 (ru) 1999-09-10
DE19502116A1 (de) 1996-08-08
IN186226B (enExample) 2001-07-14
EP0806083B1 (de) 1998-10-07
CN1096146C (zh) 2002-12-11
UA42048C2 (uk) 2001-10-15
US5925905A (en) 1999-07-20
ES2123300T3 (es) 1999-01-01
KR100358255B1 (ko) 2003-01-15
EP0806083A1 (de) 1997-11-12
DE59503885D1 (de) 1998-11-12
KR19980701601A (ko) 1998-05-15
JP2950999B2 (ja) 1999-09-20
JPH10502786A (ja) 1998-03-10
CN1178040A (zh) 1998-04-01

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee