RU2137294C1 - Моп-устройство включения высоких напряжений на полупроводниковой интегральной схеме - Google Patents

Моп-устройство включения высоких напряжений на полупроводниковой интегральной схеме Download PDF

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Publication number
RU2137294C1
RU2137294C1 RU97114100A RU97114100A RU2137294C1 RU 2137294 C1 RU2137294 C1 RU 2137294C1 RU 97114100 A RU97114100 A RU 97114100A RU 97114100 A RU97114100 A RU 97114100A RU 2137294 C1 RU2137294 C1 RU 2137294C1
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RU
Russia
Prior art keywords
transistor
terminal
gate
transistors
output
Prior art date
Application number
RU97114100A
Other languages
English (en)
Russian (ru)
Other versions
RU97114100A (ru
Inventor
Ханнеберг Армин
Темпель Георг
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Сименс АГ
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Filing date
Publication date
Application filed by Сименс АГ filed Critical Сименс АГ
Publication of RU97114100A publication Critical patent/RU97114100A/ru
Application granted granted Critical
Publication of RU2137294C1 publication Critical patent/RU2137294C1/ru

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/102—Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/356147—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Electronic Switches (AREA)
  • Semiconductor Integrated Circuits (AREA)
RU97114100A 1995-01-24 1995-12-29 Моп-устройство включения высоких напряжений на полупроводниковой интегральной схеме RU2137294C1 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19502116.9 1995-01-24
DE19502116A DE19502116C2 (de) 1995-01-24 1995-01-24 MOS-Schaltungsanordnung zum Schalten hoher Spannungen auf einem Halbleiterchip
PCT/DE1995/001875 WO1996023356A1 (de) 1995-01-24 1995-12-29 Mos-schaltungsanordnung zum schalten hoher spannungen auf einem halbleiterchip

Publications (2)

Publication Number Publication Date
RU97114100A RU97114100A (ru) 1999-06-20
RU2137294C1 true RU2137294C1 (ru) 1999-09-10

Family

ID=7752210

Family Applications (1)

Application Number Title Priority Date Filing Date
RU97114100A RU2137294C1 (ru) 1995-01-24 1995-12-29 Моп-устройство включения высоких напряжений на полупроводниковой интегральной схеме

Country Status (12)

Country Link
US (1) US5925905A (enExample)
EP (1) EP0806083B1 (enExample)
JP (1) JP2950999B2 (enExample)
KR (1) KR100358255B1 (enExample)
CN (1) CN1096146C (enExample)
AT (1) ATE172068T1 (enExample)
DE (2) DE19502116C2 (enExample)
ES (1) ES2123300T3 (enExample)
IN (1) IN186226B (enExample)
RU (1) RU2137294C1 (enExample)
UA (1) UA42048C2 (enExample)
WO (1) WO1996023356A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2601172C2 (ru) * 2015-04-03 2016-10-27 Акционерное Общество "Научно-Исследовательский Институт Микроэлектронной Аппаратуры "Прогресс" Переключатель с высокой изоляцией
RU2775297C1 (ru) * 2022-02-08 2022-06-29 Юрий Николаевич Цыбин Способ и устройство коммутации напряжения питания

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19519774C1 (de) 1995-05-30 1996-10-24 Siemens Ag Verfahren zur selektiven Programmierung eines nicht-flüchtigen Speichers
JP3386141B2 (ja) * 1997-01-24 2003-03-17 シーメンス アクチエンゲゼルシヤフト 負電圧生成用回路装置
FR2776144B1 (fr) * 1998-03-13 2000-07-13 Sgs Thomson Microelectronics Circuit de commutation de signaux analogiques d'amplitudes superieures a la tension d'alimentation
US6288603B1 (en) 2000-06-16 2001-09-11 Stmicroelectronics S.R.L. High-voltage bidirectional switch made using high-voltage MOS transistors
KR100393201B1 (ko) * 2001-04-16 2003-07-31 페어차일드코리아반도체 주식회사 낮은 온 저항과 높은 브레이크다운 전압을 갖는 고전압수평형 디모스 트랜지스터
KR100413590B1 (ko) * 2001-10-16 2004-01-07 월드탑텍(주) 소스전압 극성절환장치
JP3928938B2 (ja) * 2002-05-28 2007-06-13 シャープ株式会社 電圧変換回路および半導体装置
DE10246083B3 (de) * 2002-09-27 2004-03-04 Alpha Microelectronics Gmbh Schaltungsanordnung zur Überbrückung hoher Spannungen mit einem Schaltsignal
US6914791B1 (en) 2002-11-06 2005-07-05 Halo Lsi, Inc. High efficiency triple well charge pump circuit
US7829928B2 (en) * 2006-06-26 2010-11-09 System General Corp. Semiconductor structure of a high side driver and method for manufacturing the same
US8723578B1 (en) 2012-12-14 2014-05-13 Palo Alto Research Center Incorporated Pulse generator circuit
US9793881B2 (en) * 2013-08-05 2017-10-17 Samsung Electronics Co., Ltd. Flip-flop with zero-delay bypass mux
CN104579256B (zh) * 2014-12-23 2017-05-24 昆山锐芯微电子有限公司 电平切换电路和电平切换装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2060300A (en) * 1979-09-13 1981-04-29 Tokyo Shibaura Electric Co Cmos sense amplifier
EP0456623A2 (en) * 1990-05-08 1991-11-13 Texas Instruments Incorporated Circuitry and method for selectively switching negative voltages in CMOS integrated circuits
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
US5335200A (en) * 1993-01-05 1994-08-02 Texas Instruments Incorporated High voltage negative charge pump with low voltage CMOS transistors
US5371705A (en) * 1992-05-25 1994-12-06 Mitsubishi Denki Kabushiki Kaisha Internal voltage generator for a non-volatile semiconductor memory device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1236069A (en) * 1967-11-06 1971-06-16 Hitachi Ltd A bistable driving circuit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2060300A (en) * 1979-09-13 1981-04-29 Tokyo Shibaura Electric Co Cmos sense amplifier
US5077691A (en) * 1989-10-23 1991-12-31 Advanced Micro Devices, Inc. Flash EEPROM array with negative gate voltage erase operation
EP0456623A2 (en) * 1990-05-08 1991-11-13 Texas Instruments Incorporated Circuitry and method for selectively switching negative voltages in CMOS integrated circuits
US5371705A (en) * 1992-05-25 1994-12-06 Mitsubishi Denki Kabushiki Kaisha Internal voltage generator for a non-volatile semiconductor memory device
US5335200A (en) * 1993-01-05 1994-08-02 Texas Instruments Incorporated High voltage negative charge pump with low voltage CMOS transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2601172C2 (ru) * 2015-04-03 2016-10-27 Акционерное Общество "Научно-Исследовательский Институт Микроэлектронной Аппаратуры "Прогресс" Переключатель с высокой изоляцией
RU2775297C1 (ru) * 2022-02-08 2022-06-29 Юрий Николаевич Цыбин Способ и устройство коммутации напряжения питания

Also Published As

Publication number Publication date
EP0806083A1 (de) 1997-11-12
KR19980701601A (ko) 1998-05-15
US5925905A (en) 1999-07-20
EP0806083B1 (de) 1998-10-07
DE19502116A1 (de) 1996-08-08
KR100358255B1 (ko) 2003-01-15
UA42048C2 (uk) 2001-10-15
CN1178040A (zh) 1998-04-01
DE19502116C2 (de) 1998-07-23
ES2123300T3 (es) 1999-01-01
DE59503885D1 (de) 1998-11-12
ATE172068T1 (de) 1998-10-15
WO1996023356A1 (de) 1996-08-01
JPH10502786A (ja) 1998-03-10
CN1096146C (zh) 2002-12-11
IN186226B (enExample) 2001-07-14
JP2950999B2 (ja) 1999-09-20

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MM4A The patent is invalid due to non-payment of fees

Effective date: 20081230