JP2773487B2 - トンネルトランジスタ - Google Patents

トンネルトランジスタ

Info

Publication number
JP2773487B2
JP2773487B2 JP3265749A JP26574991A JP2773487B2 JP 2773487 B2 JP2773487 B2 JP 2773487B2 JP 3265749 A JP3265749 A JP 3265749A JP 26574991 A JP26574991 A JP 26574991A JP 2773487 B2 JP2773487 B2 JP 2773487B2
Authority
JP
Japan
Prior art keywords
semiconductor
tunnel
substrate
transistor
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP3265749A
Other languages
English (en)
Japanese (ja)
Other versions
JPH05110086A (ja
Inventor
寿夫 馬場
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP3265749A priority Critical patent/JP2773487B2/ja
Priority to US07/960,863 priority patent/US5589696A/en
Priority to DE69219057T priority patent/DE69219057T2/de
Priority to EP92309417A priority patent/EP0538036B1/en
Publication of JPH05110086A publication Critical patent/JPH05110086A/ja
Application granted granted Critical
Publication of JP2773487B2 publication Critical patent/JP2773487B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
JP3265749A 1991-10-15 1991-10-15 トンネルトランジスタ Expired - Lifetime JP2773487B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3265749A JP2773487B2 (ja) 1991-10-15 1991-10-15 トンネルトランジスタ
US07/960,863 US5589696A (en) 1991-10-15 1992-10-14 Tunnel transistor comprising a semiconductor film between gate and source/drain
DE69219057T DE69219057T2 (de) 1991-10-15 1992-10-15 Tunneleffekttransistor
EP92309417A EP0538036B1 (en) 1991-10-15 1992-10-15 Tunnel transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3265749A JP2773487B2 (ja) 1991-10-15 1991-10-15 トンネルトランジスタ

Publications (2)

Publication Number Publication Date
JPH05110086A JPH05110086A (ja) 1993-04-30
JP2773487B2 true JP2773487B2 (ja) 1998-07-09

Family

ID=17421473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3265749A Expired - Lifetime JP2773487B2 (ja) 1991-10-15 1991-10-15 トンネルトランジスタ

Country Status (4)

Country Link
US (1) US5589696A (index.php)
EP (1) EP0538036B1 (index.php)
JP (1) JP2773487B2 (index.php)
DE (1) DE69219057T2 (index.php)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0549373B1 (en) * 1991-12-25 1995-05-17 Nec Corporation Tunnel transistor and method of manufacturing same
US6693317B2 (en) * 2001-07-13 2004-02-17 Taiwan Semiconductor Manufacturing Company Optical sensor by using tunneling diode
US20060113612A1 (en) * 2002-06-19 2006-06-01 Kailash Gopalakrishnan Insulated-gate semiconductor device and approach involving junction-induced intermediate region
JP4922753B2 (ja) 2003-03-20 2012-04-25 パナソニック株式会社 半導体装置およびその製造方法
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US7626246B2 (en) 2005-07-26 2009-12-01 Amberwave Systems Corporation Solutions for integrated circuit integration of alternative active area materials
US7638842B2 (en) 2005-09-07 2009-12-29 Amberwave Systems Corporation Lattice-mismatched semiconductor structures on insulators
US8441000B2 (en) * 2006-02-01 2013-05-14 International Business Machines Corporation Heterojunction tunneling field effect transistors, and methods for fabricating the same
US7777250B2 (en) 2006-03-24 2010-08-17 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures and related methods for device fabrication
US8173551B2 (en) 2006-09-07 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Defect reduction using aspect ratio trapping
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
US7799592B2 (en) 2006-09-27 2010-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. Tri-gate field-effect transistors formed by aspect ratio trapping
US8502263B2 (en) 2006-10-19 2013-08-06 Taiwan Semiconductor Manufacturing Company, Ltd. Light-emitter-based devices with lattice-mismatched semiconductor structures
JP2008252086A (ja) * 2007-03-12 2008-10-16 Interuniv Micro Electronica Centrum Vzw ゲートトンネル障壁を持つトンネル電界効果トランジスタ
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
WO2008124154A2 (en) 2007-04-09 2008-10-16 Amberwave Systems Corporation Photovoltaics on silicon
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
DE112008002387B4 (de) 2007-09-07 2022-04-07 Taiwan Semiconductor Manufacturing Co., Ltd. Struktur einer Mehrfachübergangs-Solarzelle, Verfahren zur Bildung einer photonischenVorrichtung, Photovoltaische Mehrfachübergangs-Zelle und Photovoltaische Mehrfachübergangs-Zellenvorrichtung,
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
EP2528087B1 (en) 2008-09-19 2016-06-29 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of devices by epitaxial layer overgrowth
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
SG171987A1 (en) 2009-04-02 2011-07-28 Taiwan Semiconductor Mfg Devices formed from a non-polar plane of a crystalline material and method of making the same
JP5910965B2 (ja) * 2012-03-07 2016-04-27 国立研究開発法人産業技術総合研究所 トンネル電界効果トランジスタの製造方法及びトンネル電界効果トランジスタ
EP2674978B1 (en) * 2012-06-15 2020-07-29 IMEC vzw Tunnel field effect transistor device and method for making the device
JP2014053435A (ja) 2012-09-06 2014-03-20 Toshiba Corp 半導体装置
EP2808897B1 (en) 2013-05-30 2021-06-30 IMEC vzw Tunnel field effect transistor and method for making thereof
US8975123B2 (en) 2013-07-09 2015-03-10 International Business Machines Corporation Tunnel field-effect transistors with a gate-swing broken-gap heterostructure
JP6331375B2 (ja) * 2013-12-17 2018-05-30 富士通株式会社 電界効果型半導体装置
JP6175411B2 (ja) * 2014-06-16 2017-08-02 東芝メモリ株式会社 半導体装置
CN107431089B (zh) * 2015-04-22 2021-03-30 华为技术有限公司 隧穿晶体管及隧穿晶体管的制备方法
CN109065615B (zh) * 2018-06-12 2021-05-07 西安电子科技大学 一种新型平面InAs/Si异质隧穿场效应晶体管及其制备方法
CN110459541B (zh) * 2019-06-27 2022-05-13 西安电子科技大学 一种平面互补型隧穿场效应晶体管反相器
CN111640791A (zh) * 2020-04-26 2020-09-08 西安电子科技大学 基于InAs/GaSb异质结的量子阱隧穿场效应晶体管及其制备方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3390352A (en) * 1961-11-06 1968-06-25 Itt Tunnel-effect semiconductor, used as an oscillator or amplifier, forms part of surface of waveguide or chamber
JPH0673375B2 (ja) * 1984-03-19 1994-09-14 富士通株式会社 半導体装置の製造方法
EP0667645A1 (en) * 1984-11-05 1995-08-16 Hitachi, Ltd. Superconducting device
JPS63250855A (ja) * 1987-04-08 1988-10-18 Hitachi Ltd バイポ−ラ型トランジスタ
US4969019A (en) * 1987-08-27 1990-11-06 Texas Instruments Incorporated Three-terminal tunnel device
JPH02268429A (ja) * 1989-04-11 1990-11-02 Tokyo Electron Ltd プラズマエッチング装置
US5105247A (en) * 1990-08-03 1992-04-14 Cavanaugh Marion E Quantum field effect device with source extension region formed under a gate and between the source and drain regions
EP0480814B1 (en) * 1990-10-08 1996-04-24 Sumitomo Electric Industries, Ltd. Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same
JPH05235057A (ja) * 1992-02-19 1993-09-10 Sanyo Electric Co Ltd 半導体装置

Also Published As

Publication number Publication date
DE69219057T2 (de) 1998-02-26
DE69219057D1 (de) 1997-05-22
EP0538036B1 (en) 1997-04-16
JPH05110086A (ja) 1993-04-30
EP0538036A2 (en) 1993-04-21
EP0538036A3 (index.php) 1995-03-22
US5589696A (en) 1996-12-31

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Legal Events

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Effective date: 19980324