JP6175411B2 - 半導体装置 - Google Patents
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- JP6175411B2 JP6175411B2 JP2014123714A JP2014123714A JP6175411B2 JP 6175411 B2 JP6175411 B2 JP 6175411B2 JP 2014123714 A JP2014123714 A JP 2014123714A JP 2014123714 A JP2014123714 A JP 2014123714A JP 6175411 B2 JP6175411 B2 JP 6175411B2
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- 239000004065 semiconductor Substances 0.000 title claims description 60
- 239000000463 material Substances 0.000 claims description 106
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 35
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 224
- 238000000034 method Methods 0.000 description 32
- 150000002500 ions Chemical class 0.000 description 26
- 239000012535 impurity Substances 0.000 description 25
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 238000001459 lithography Methods 0.000 description 11
- 230000003071 parasitic effect Effects 0.000 description 11
- 230000005684 electric field Effects 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 230000005641 tunneling Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
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- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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- H01L29/0843—Source or drain regions of field-effect devices
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Description
図1は第1の実施形態によるトンネル型半導体装置(以下、TFETともいう)100の構成の一例を示す断面図である。TFET100は、BOX(Buried Oxide)層10と、半導体層20と、ゲート絶縁膜30と、ゲート電極40と、ドレイン層50と、ソース層60と、チャネル層75と、低濃度層70と、層間絶縁膜90とを備えている。
図8は、第2の実施形態によるP型TFET200の構成の一例を示す断面図である。P型TFET200では、チャネル層75は、ソース端部E12に接する第3領域76と、ソース端部E12以外の領域に接する第4領域78とを有する。第3領域76は、第1材料としての広Eg材料からなり、第4領域78は、第2材料としての狭Eg材料からなる。上述の通り、広Eg材料は、例えば、Siである。狭Eg材料は、例えば、SiGe、Ge、InGaAsのうち少なくとも1種類の材料からなる。第2の実施形態でも、狭Eg材料としてSiGeを用いている。
図14は、第3の実施形態による相補型(Complementary)TFET(以下、C型TFETともいう)300の構成の一例を示す断面図である。尚、図14には、単一のTFET300しか示していないが、N型TFETおよびP型TFETが基板上に混載されていてもよい。
Claims (5)
- 半導体層と、
前記半導体層上に設けられたゲート絶縁膜と、
前記半導体層上に前記ゲート絶縁膜を介して設けられたゲート電極と、
前記ゲート電極の一端側にある前記半導体層内に設けられた第1導電型のドレイン層と、
前記ゲート電極の他端側および該ゲート電極の下方にある前記半導体層内に設けられた第2導電型のソース層と、
前記ゲート絶縁膜と前記ソース層との間に設けられたチャネル層とを備え、
前記ソース層のドレイン側端部は、前記ゲート電極の底面の下方にあり、
前記ソース層の表面領域のうち前記ドレイン側端部の領域は第1材料からなり、該ソース層の表面領域のうち前記ドレイン側端部以外の領域は第2材料からなり、
前記第1材料のエネルギーバンドギャップは、前記第2材料のエネルギーバンドギャップよりも大きいことを特徴とする半導体装置。 - 半導体層と、
前記半導体層上に設けられたゲート絶縁膜と、
前記半導体層上に前記ゲート絶縁膜を介して設けられたゲート電極と、
前記ゲート電極の一端側にある前記半導体層内に設けられた第1導電型のドレイン層と、
前記ゲート電極の他端側および該ゲート電極の下方にある前記半導体層内に設けられた第2導電型のソース層と、
前記ゲート絶縁膜と前記ソース層との間に設けられたチャネル層とを備え、
前記ソース層のドレイン側端部は、前記ゲート電極の底面の下方にあり、
前記ソース層の前記ドレイン側端部上にある前記チャネル層の部分は第1材料からなり、該ソース層の前記ドレイン側端部以外の領域上にある前記チャネル層の部分は第2材料からなり、
前記第1材料のエネルギーバンドギャップは、前記第2材料のエネルギーバンドギャップよりも大きいことを特徴とする半導体装置。 - 半導体層と、
前記半導体層上に設けられたゲート絶縁膜と、
前記半導体層上に前記ゲート絶縁膜を介して設けられたゲート電極と、
前記ゲート電極の一端側にある前記半導体層内に設けられた第1導電型のドレイン層と、
前記ゲート電極の他端側および該ゲート電極の下方にある前記半導体層内に設けられた第2導電型のソース層と、
前記ゲート絶縁膜と前記ソース層との間に設けられたチャネル層とを備え、
前記ソース層のドレイン側端部は、前記ゲート電極の底面の下方にあり、
前記ソース層の表面領域のうち前記ドレイン側端部は第1材料からなり、該ソース層の表面領域のうち前記ドレイン側端部以外の領域は第2材料からなり、
前記ソース層の前記ドレイン側端部上にある前記チャネル層の部分は第3材料からなり、該ソース層の前記ドレイン側端部以外の領域上にある前記チャネル層の部分は第4材料からなり、
前記第1材料のエネルギーバンドギャップは、前記第2材料のエネルギーバンドギャップよりも大きく、
前記第3材料のエネルギーバンドギャップは、前記第4材料のエネルギーバンドギャップよりも大きいことを特徴とする半導体装置。 - 前記第1材料は、Siからなることを特徴とする請求項1から請求項3のいずれか一項に記載の半導体装置。
- 前記第2材料は、SiGe、Ge、InGaAsの少なくとも1種類からなることを特徴とする請求項1から請求項4のいずれか一項に記載の半導体装置。
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JP2014123714A JP6175411B2 (ja) | 2014-06-16 | 2014-06-16 | 半導体装置 |
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US9728639B2 (en) * | 2015-01-02 | 2017-08-08 | Samsung Electronics Co., Ltd. | Tunnel field effect transistors having low turn-on voltage |
CN107924941B (zh) * | 2015-09-01 | 2020-09-04 | 华为技术有限公司 | 隧穿场效应晶体管及其制备方法 |
WO2018000133A1 (zh) * | 2016-06-27 | 2018-01-04 | 华为技术有限公司 | 一种隧穿场效应晶体管及其制作方法 |
WO2018094599A1 (zh) * | 2016-11-23 | 2018-05-31 | 华为技术有限公司 | 一种隧穿场效应晶体管制备方法及其隧穿场效应晶体管 |
CN108369954B (zh) * | 2016-11-26 | 2021-02-23 | 华为技术有限公司 | 隧穿场效应晶体管及其制作方法 |
CN106783850B (zh) * | 2016-11-30 | 2019-11-22 | 上海集成电路研发中心有限公司 | 一种集成了tfet的finfet器件及其制备方法 |
WO2019000416A1 (zh) * | 2017-06-30 | 2019-01-03 | 华为技术有限公司 | 一种隧穿场效应晶体管及其制备方法 |
JP7013049B2 (ja) * | 2018-03-22 | 2022-01-31 | 国立研究開発法人産業技術総合研究所 | トンネル電界効果トランジスタ及びその設計方法 |
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JP2773487B2 (ja) * | 1991-10-15 | 1998-07-09 | 日本電気株式会社 | トンネルトランジスタ |
JP2000514958A (ja) * | 1997-05-16 | 2000-11-07 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | シリコンゲルマニウム半導体デバイスとその製造方法 |
US7102201B2 (en) * | 2004-07-15 | 2006-09-05 | International Business Machines Corporation | Strained semiconductor device structures |
US8405121B2 (en) * | 2009-02-12 | 2013-03-26 | Infineon Technologies Ag | Semiconductor devices |
JP5434365B2 (ja) * | 2009-08-24 | 2014-03-05 | ソニー株式会社 | 半導体装置及びその製造方法 |
US8421165B2 (en) * | 2010-05-11 | 2013-04-16 | Sematech, Inc. | Apparatus, system, and method for tunneling MOSFETs using self-aligned heterostructure source and isolated drain |
JP5910965B2 (ja) * | 2012-03-07 | 2016-04-27 | 国立研究開発法人産業技術総合研究所 | トンネル電界効果トランジスタの製造方法及びトンネル電界効果トランジスタ |
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