JP6043193B2 - トンネルトランジスタ - Google Patents
トンネルトランジスタ Download PDFInfo
- Publication number
- JP6043193B2 JP6043193B2 JP2013013150A JP2013013150A JP6043193B2 JP 6043193 B2 JP6043193 B2 JP 6043193B2 JP 2013013150 A JP2013013150 A JP 2013013150A JP 2013013150 A JP2013013150 A JP 2013013150A JP 6043193 B2 JP6043193 B2 JP 6043193B2
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- 239000004065 semiconductor Substances 0.000 claims description 77
- 238000009792 diffusion process Methods 0.000 claims description 31
- 239000012535 impurity Substances 0.000 claims description 17
- 239000010408 film Substances 0.000 description 99
- 239000000758 substrate Substances 0.000 description 53
- 238000005468 ion implantation Methods 0.000 description 31
- 238000000034 method Methods 0.000 description 27
- 238000001459 lithography Methods 0.000 description 17
- 239000007772 electrode material Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000001020 plasma etching Methods 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 12
- 229910052698 phosphorus Inorganic materials 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 150000002500 ions Chemical class 0.000 description 11
- 238000000137 annealing Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 229910021332 silicide Inorganic materials 0.000 description 9
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052785 arsenic Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- -1 NiSi Chemical compound 0.000 description 4
- 229910005883 NiSi Inorganic materials 0.000 description 4
- 229910005881 NiSi 2 Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0895—Tunnel injectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66356—Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Description
102 ゲート絶縁膜
104 ソース領域
104b ソースエクステンション領域
104c ポケット領域
106 ドレイン領域
110 ゲート電極
120 側壁絶縁膜
Claims (3)
- 半導体層に離間して設けられた、第1導電型の第1拡散層、及び前記第1導電型とは逆導電型の第2導電型の第2拡散層と、
前記第1拡散層と前記第2拡散層との間の前記半導体層上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
前記半導体層の表面部に、前記第1拡散層に隣接して設けられた前記第2導電型のポケット領域と、
前記ポケット領域の少なくとも一部を覆うように前記半導体層に設けられた前記第1導電型の第1エクステンション領域と、
を備え、
前記第1エクステンション領域の前記第2拡散層側端部は、前記ポケット領域の前記第2拡散層側端部よりも前記第2拡散層側に位置しており、
前記第1拡散層と前記第1エクステンション領域との間に前記ポケット領域が設けられており、前記第1エクステンション領域は前記第1拡散層から離間して設けられていることを特徴とするトンネルトランジスタ。 - 半導体層に離間して設けられた、第1導電型の第1拡散層、及び前記第1導電型とは逆導電型の第2導電型の第2拡散層と、
前記第1拡散層と前記第2拡散層との間の前記半導体層上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
前記半導体層の表面部に、前記第1拡散層に隣接して設けられた前記第2導電型のポケット領域と、
前記ポケット領域の少なくとも一部を覆うように前記半導体層に設けられた前記第1導電型の第1エクステンション領域と、
前記半導体層の表面部に、前記第1拡散層に隣接して設けられた前記第1導電型の第2エクステンション領域と、を備え、
前記第1エクステンション領域の前記第2拡散層側端部は、前記ポケット領域の前記第2拡散層側端部よりも前記第2拡散層側に位置しており、
前記第2エクステンション領域の前記第2拡散層側端部は、前記ポケット領域の前記第2拡散層側端部よりも前記第1拡散層側に位置していることを特徴とするトンネルトランジスタ。 - 前記第2エクステンション領域の不純物濃度は、前記第1エクステンション領域の不純物濃度より高いことを特徴とする請求項2に記載のトンネルトランジスタ。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013013150A JP6043193B2 (ja) | 2013-01-28 | 2013-01-28 | トンネルトランジスタ |
US13/919,917 US9324798B2 (en) | 2013-01-28 | 2013-06-17 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013013150A JP6043193B2 (ja) | 2013-01-28 | 2013-01-28 | トンネルトランジスタ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014146647A JP2014146647A (ja) | 2014-08-14 |
JP2014146647A5 JP2014146647A5 (ja) | 2015-10-08 |
JP6043193B2 true JP6043193B2 (ja) | 2016-12-14 |
Family
ID=51221929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013013150A Active JP6043193B2 (ja) | 2013-01-28 | 2013-01-28 | トンネルトランジスタ |
Country Status (2)
Country | Link |
---|---|
US (1) | US9324798B2 (ja) |
JP (1) | JP6043193B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103560144B (zh) * | 2013-11-13 | 2016-02-17 | 北京大学 | 抑制隧穿晶体管泄漏电流的方法及相应的器件和制备方法 |
US10026830B2 (en) * | 2015-04-29 | 2018-07-17 | Stmicroelectronics, Inc. | Tunneling field effect transistor (TFET) having a semiconductor fin structure |
JP2016213408A (ja) | 2015-05-13 | 2016-12-15 | 株式会社東芝 | トンネルfet |
CN104882447B (zh) * | 2015-05-27 | 2018-10-16 | 上海集成电路研发中心有限公司 | 一种漏区嵌入反型层的半浮栅器件及制造方法 |
WO2017035780A1 (zh) * | 2015-09-01 | 2017-03-09 | 华为技术有限公司 | 隧穿场效应晶体管及其制备方法 |
CN106558609B (zh) * | 2015-09-24 | 2020-01-10 | 中国科学院微电子研究所 | 隧穿场效应晶体管及其制造方法 |
JP2017162920A (ja) * | 2016-03-08 | 2017-09-14 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
CN108140671A (zh) * | 2016-06-27 | 2018-06-08 | 华为技术有限公司 | 一种隧穿场效应晶体管及其制作方法 |
US11233148B2 (en) * | 2017-11-06 | 2022-01-25 | Intel Corporation | Reducing band-to-band tunneling in semiconductor devices |
Family Cites Families (17)
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JPH05190847A (ja) * | 1992-01-08 | 1993-07-30 | Kawasaki Steel Corp | Mos型半導体装置 |
JP2833500B2 (ja) * | 1995-01-13 | 1998-12-09 | 日本電気株式会社 | 表面トンネルトランジスタの製造方法 |
US7482615B2 (en) * | 2005-07-21 | 2009-01-27 | International Business Machines Corporation | High performance MOSFET comprising stressed phase change material |
US7812370B2 (en) * | 2007-07-25 | 2010-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling |
JP5303881B2 (ja) * | 2007-08-15 | 2013-10-02 | 富士通セミコンダクター株式会社 | 電界効果トランジスタ及び電界効果トランジスタの製造方法 |
US7910991B2 (en) * | 2008-03-31 | 2011-03-22 | Freescale Semiconductor, Inc. | Dual gate lateral diffused MOS transistor |
US8084827B2 (en) * | 2009-03-27 | 2011-12-27 | National Semiconductor Corporation | Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses |
US9159565B2 (en) | 2009-08-20 | 2015-10-13 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit system with band to band tunneling and method of manufacture thereof |
US8368127B2 (en) | 2009-10-08 | 2013-02-05 | Globalfoundries Singapore Pte., Ltd. | Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive current |
US9577079B2 (en) * | 2009-12-17 | 2017-02-21 | Infineon Technologies Ag | Tunnel field effect transistors |
US8558310B2 (en) * | 2009-12-18 | 2013-10-15 | Texas Instruments Incorporated | Indium, carbon and halogen doping for PMOS transistors |
US8258031B2 (en) | 2010-06-15 | 2012-09-04 | International Business Machines Corporation | Fabrication of a vertical heterojunction tunnel-FET |
JP2012164699A (ja) * | 2011-02-03 | 2012-08-30 | Toshiba Corp | 半導体装置 |
JP5404671B2 (ja) | 2011-02-14 | 2014-02-05 | 株式会社東芝 | 半導体装置 |
JP5383732B2 (ja) | 2011-03-09 | 2014-01-08 | 株式会社東芝 | 半導体装置 |
JP5715551B2 (ja) | 2011-11-25 | 2015-05-07 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP5728444B2 (ja) * | 2012-08-23 | 2015-06-03 | 株式会社東芝 | 半導体装置およびその製造方法 |
-
2013
- 2013-01-28 JP JP2013013150A patent/JP6043193B2/ja active Active
- 2013-06-17 US US13/919,917 patent/US9324798B2/en active Active
Also Published As
Publication number | Publication date |
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JP2014146647A (ja) | 2014-08-14 |
US20140209863A1 (en) | 2014-07-31 |
US9324798B2 (en) | 2016-04-26 |
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