JP2632218B2 - セラミック焼結体の製造方法 - Google Patents

セラミック焼結体の製造方法

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Publication number
JP2632218B2
JP2632218B2 JP1188533A JP18853389A JP2632218B2 JP 2632218 B2 JP2632218 B2 JP 2632218B2 JP 1188533 A JP1188533 A JP 1188533A JP 18853389 A JP18853389 A JP 18853389A JP 2632218 B2 JP2632218 B2 JP 2632218B2
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Japan
Prior art keywords
powder
ceramic sintered
sintered body
sintering
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1188533A
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English (en)
Other versions
JPH0354159A (ja
Inventor
光雄 桑原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honda Motor Co Ltd
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Honda Motor Co Ltd
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Filing date
Publication date
Application filed by Honda Motor Co Ltd filed Critical Honda Motor Co Ltd
Priority to JP1188533A priority Critical patent/JP2632218B2/ja
Priority to GB8928030A priority patent/GB2239028B/en
Priority to BE8901334A priority patent/BE1003553A5/fr
Priority to FR898916669A priority patent/FR2655978B1/fr
Priority to CA002005686A priority patent/CA2005686C/en
Priority to DE3941516A priority patent/DE3941516C2/de
Publication of JPH0354159A publication Critical patent/JPH0354159A/ja
Application granted granted Critical
Publication of JP2632218B2 publication Critical patent/JP2632218B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】 A.発明の目的 (1) 産業上の利用分野 本発明はセラミック焼結体の製造方法、特に、Si3N4
粉末と、Si3N4粉末の焼結過程でガラス相を形成する、
少なくともY2O3粉末およびAl2O3粉末を含む焼結助剤粉
末とよりなる原料粉末を用いるセラミック焼結体の製造
方法に関する。
(2) 従来の技術 従来、セラミック焼結体の物性値のばらつきを解消
し、また信頼性を向上させるために、前記原料粉末の高
純度化および微細化といった手段が採用されている。
(3) 発明が解決しようとする課題 しかしながら前記手段を採用すると、原料粉末のコス
トの上昇に伴いセラミック焼結体の製造コストが高くな
り、また作業環境を悪化し、その上原料粉末の分散混合
が難しく取扱い性が悪い、といった種々の問題を生じ
る。
本発明は前記に鑑み、従来の前記手段に代え、原料粉
末としては通常の純度および粒度をもつものを用い、且
つ焼結助剤に本来の機能を発揮させて、高品質なセラミ
ック焼結体を得ることのできる前記製造方法を提供する
ことを目的とする。
B.発明の構成 (1) 課題を解決するための手段 本発明は、Si3N4粉末と、Si3N4粉末の焼結過程でガラ
ス相を形成する、少なくともY2O3粉末およびAl2O3粉末
を含む焼結助剤粉末とよりなる原料粉末を用いるセラミ
ック焼結体の製造方法において、前記原料粉末に、酸化
物換算値にて、0.02重量%以上、3重量%未満のLi2CO3
粉末を添加することを特徴とする。
(2) 作用 Si3N4粉末の焼結過程では、焼結助剤粉末が焼結温度
にてガラス相を形成し、このガラス相を介してSi3N4
末相互が焼結する。この場合、焼結支配因子としては、
ガラス相の塑性流動およびSi3N4粉末相互間のネックに
おける体積拡散を挙げることができ、これらは、焼結温
度および原料粉末組成により左右されるものである。
そこで、焼結温度を上昇させることにより、塑性流動
および体積拡散を改善することが考えられるが、このよ
うな手法を採用すると、局部的な粗大粒の生成および粗
大気孔の生成を惹起するおそれがある。
一方、原料粉末組成に関し、焼結温度を一定にして、
Na、K、Rb、Csといったアルカリ金属の酸化物またはア
ルカリ土類金属を原料粉末に添加して塑性流動等を改善
することが考えられるが、これらの化学物質はセラミッ
ク焼結体の耐熱性、耐食性の劣化を招くおそれがある。
本発明によれば、原料粉末に前記特定量のLi2CO3粉末
を添加し、その熱分解により生じるLi2Oの化学的作用に
よって、焼結温度を低下させ、またガラス相の塑性流動
およびSi3N4粉末相互間のネックにおける体積拡散を改
善して、焼結性および密度を向上させることができる。
しかも、ガラス相の粘性を低下させるための温度幅は、
Na、K等の酸化物等を添加した場合に比べて、極めて広
くなり、ZrO2−Al2O3系セラミックスのような塑性変形
が観測され、したがってセラミック焼結体の靭性を向上
させることができる。
また、Li2CO3粉末の添加により、異常粒成長を抑制し
て物性値のばらつきを解消し、その上信頼性を向上させ
ることが可能となる。
なお、Li2CO3粉末の添加量が、酸化物換算値にて、0.
02重量%未満では、偏析を生じて部分的な密度差を招く
だけでなく、粗大気孔を生成してセラミック焼結体の物
性が低下する。一方、前記添加量が3重量%以上では、
異常低温焼結を惹起してセラミック焼結体の強度、耐熱
性および耐食性の低下を招来する。
(3) 実施例 原料粉末において、Si3N4粉末は主たる成分であり、
またガラス相を形成してSi3N4粉末の焼結性を向上させ
る機能を備えた焼結助剤粉末としては、Al2O3粉末およ
びY2O3粉末よりなる混合粉末、ならびにこの混合粉末に
MgO、TiO2、SiO2、ZrO2、CeO2、La2O3、TiN、AlN、TiC
等の粉末を単独で、または混合して添加したものが用い
られる。
原料粉末におけるSi3N4粉末と焼結助剤粉末との配合
割合は次の通りである。
Si3N4粉末 75〜99.7重量% 焼結助剤粉末 0.3〜25重量% 前記のような配合割合を採用する理由は、焼結助剤粉
末の添加量が0.3重量%未満では、緻密なセラミック焼
結体を得ることが難しくなり、一方、25重量%を上回る
と、セラミックス本来の特性を損うからである。
Li2CO3粉末の添加量は、酸化物換算値にて、0.02重量
%以上、3重量%未満であるが、好ましくは上限値は1
重量%である。その理由は、セラミック焼結体における
1200℃以上の高温特性の劣化および耐薬品性の低下が懸
念されるからである。
Li2CO3粉末の添加に伴い、その添加量に応じてSi3N4
粉末の使用量が減じられる。
Li2CO3粉末は、焼結過程において約620℃で分解して
酸化物Li2Oを生成する。そのLi2Oは、Si3N4粉末表面の
酸化物層、Al2O3およびY2O3と反応して、Li4SiO4、Li2S
iO3、LiAlO2、Li2Al10O16、LiAlSiO4、LiAlSi2O6等の微
量の化合物およびLiYO2,Li2Y10O16,Li2AlYO4,Li2AlYSiO
6等の微量の化合物を生成する。これらの化合物は、焼
結温度を低下させ、また焼結助剤により形成されたガラ
ス層の塑性流動およびSi3N4粉末相互間のネックにおけ
る体積拡散を改善する作用を有するものである。
Li2CO3粉末によって、前記のような作用が得られる理
由は推定の域を出ないが、次のように考えられる。即
ち、Liのイオン半径は、6配位、0.68Åであり、これと
近似するAl3+およびY3+は6配位であってLiと反応し易
く、またLiのイオン半径は比較的小さく、結晶がコンパ
クトであり、これらにより前記作用が得られるものと思
われる。
前記反応性は他の焼結助剤粉末についても言えるもの
で、例えば、Ti4+、Zr4+、Mg2+はそれぞれ6配位であ
る。
前記Li4SiO4等の化合物は強度が極めて低く、またセ
ラミック焼結体の耐熱性を低下させるといった不具合を
惹起するので、Li2CO3粉末の添加量の設定は重要な意義
をもつ。例えば、Li2CO3粉末の添加量が3重量%以上で
は、セラミック焼結体の耐熱性は約1000℃となり、耐熱
鋼のそれと略同程度にまで低下する。
Li2CO3粉末による、局部的な異常粒成長抑制作用は、
次の事例において確認される。
Si3N4粉末に、焼結助剤粉末として、5重量%のAl2O3
粉末および5重量%のY2O3粉末を添加した原料粉末を用
い、焼結温度1750℃にて焼結したセラミック焼結体にお
いては、直径3〜5μmに成長したSi3N4粒間に、直径
8〜10μmの異常成長した粒子や粒子塊が存在するが、
前記原料粉末にLi2CO3粉末を微量添加、例えば0.1重量
%添加すると、前記粒子は直径0.7〜2μm、長さ5μ
m程度にその成長を抑制される。
この異常粒成長抑制作用は、Liと共にZr、Mg、Ti、Cr
等が共存すると、一層顕著となる。
セラミック焼結体に、焼結後熱処理を施すことは、そ
の焼結体の耐熱性、耐食性を向上させ、また高温クリー
プ性を改善する上で有効である。この熱処理は、800〜1
600℃の再結晶温度範囲にて、1回または複数回行い、
粒界ガラス相の結晶化とLiの固定化を図る。
〔実施例I〕
表Iは、各種セラミック焼結体の組成および焼結温度
を示す。
Si3N4粉末としては、平均直径0.7μmで、α化率90%
以上のものが用いられた。また焼結助剤粉末の平均直径
において、Y2O3粉末は0.7μm、Al2O3粉末は0.6μm、Z
rO2粉末は0.2μmである。その他の焼結助剤粉末および
Li2CO3粉末としては試薬特級を使用した。
各セラミック焼結体A1〜E2-2の製造に当っては、それ
に対応する原料粉末単独、または原料粉末にLi2CO3粉末
を添加した混合粉末に水を加え、ボールミルにて24時間
湿式混合した後、スリップキャスティングにて縦12mm、
横50mm、長さ120mmの板状成形体を成形した。
各成形体を十分に乾燥した後、それらに表Iに示す焼
結温度にて焼結処理を施し、セラミック焼結体A1〜E2-2
を得た。
表IIは各セラミック焼結体A1〜E2-2の各種物性を示
す。
表I,IIから明らかなように、本発明により得られたセ
ラミック焼結体A2,B2,C2,D2,E2-1,E2-2は、Li2CO3粉末
の添加により比較例セラミック焼結体A1,B1,C1,D1,E1
比べて焼結温度が50〜100℃低く、また密度も0.1〜0.25
g/cm3程度高く、さらに硬さおよび曲げ強さも向上して
いる。
セラミック焼結体A1,A2について、鏡面研摩後、その
鏡面を光学顕微鏡にて観察したところ、セラミック焼結
体A1においては、直径25〜30μmの粗大気孔と、直径約
1μmの気孔が存在するが、セラミック焼結体A2におい
ては気孔の直径が1〜2μmと微細であり、またその数
も極端に少ないことが判明した。
前記セラミック焼結体A1において、その高密度化を狙
って原料粉末の高純度化および微細化を行った場合、粗
大気孔の数を減少させることはできても、その直径を減
じられないことがあり、その結果、しばしば、強度のば
らつきが大きく、また破壊靭性値がそれ程改善されない
ことがある。また微細な原料粉末を用いると、スリップ
キャスティングによる成形が困難になる、といった不具
合もある。
前記問題はLi2CO3粉末を添加することによって解消さ
れる。
セラミック焼結体E1,E2-1,E2-2は、高靭性を狙った組
成を有するが、添加成分の関係から、ボーラスになり易
く、したがってセラミック焼結体E1では、直径0.5μm
程度の気孔が均一に分散し、一部これらの気孔が凝集し
た直径2〜3μmの比較的大きな気孔も存在する。セラ
ミック焼結体E2-1,E2-2においては、Li2CO3粉末の添加
により気孔の数がセラミック焼結体E1に比べて少なくな
り、強度が大幅に向上する。
〔実施例II〕
表IIIは、各種セラミック焼結体の組成を示す。
Si3N4粉末、Y2O3粉末、Al2O3粉末、ZrO2粉末、CeO2
末、La2O3粉末、MgO粉末およびLi2CO3粉末としては実施
例Iと同様のものを使用した。また平均直径において、
TiN粉末としては1.2μm、AlN粉末としては1.0μm、Ti
O2粉末としては0.1μmのものをそれぞれ使用した。
各セラミック焼結体F1〜G2を得るための、混合法、成
形法、焼結法は実施例Iと同じである。
焼結後、各セラミック焼結体F2,G2に、表IIIに示す再
結晶温度にて熱処理を施し、粒界ガラス相の結晶化とLi
の固定化を行った。
表IVは各セラミック焼結体F1〜G2の各種物性を示す。
表中、破壊靭性値の測定は、チエブロンノッチ(Chevro
n Notch)法による。
表III,IVから明らかなように、本発明により得られた
セラミック焼結体F2,G2は、Li2CO3粉末の添加により比
較例セラミック焼結体F1,G1,に比べて焼結温度が50〜10
0℃低く、また密度も0.18g/cm3高く、さらに曲げ強さお
よび破壊靭性値も向上している。
各セラミック焼結体F1,G1の組成は、焼結時、Al、Ti
等の金属を析出し、この析出金属により高靭性化が図ら
れるが、その反面不均一組織となり易い、といった不具
合がある。例えば、TiO2粉末を添加したセラミック焼結
体G1においては、TiO2の拡散またはTiO2への窒素等の拡
散が遅く、また凝集し易いため、均一組織を有する焼結
体を得ることは非常に難しい。
これに対し、セラミック焼結体G2においては、Li2CO3
粉末の添加によって、焼結性が改善され、組織の均一化
が図られている。
C.発明の効果 本発明によれば、Si3N4粉末および特定の焼結助剤粉
末よりなる原料粉末に、特定量のLi2CO3粉末を添加する
ことによって、焼結助剤に本来の機能を発揮させ、これ
によりSi3N4粉末の焼結性が良好で、均一組織を有し、
また高強度、且つ高靭性なセラミック焼結体を得ること
ができる。

Claims (1)

    (57)【特許請求の範囲】
  1. 【請求項1】Si3N4粉末と、Si3N4粉末の焼結過程でガラ
    ス相を形成する、少なくともY2O3粉末およびAl2O3粉末
    を含む焼結助剤粉末とよりなる原料粉末を用いるセラミ
    ック焼結体の製造方法において、前記原料粉末に、酸化
    物換算値にて、0.02重量%以上、3重量%未満のLi2CO3
    粉末を添加することを特徴とするセラミック焼結体の製
    造方法。
JP1188533A 1989-07-20 1989-07-20 セラミック焼結体の製造方法 Expired - Fee Related JP2632218B2 (ja)

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JP1188533A JP2632218B2 (ja) 1989-07-20 1989-07-20 セラミック焼結体の製造方法
GB8928030A GB2239028B (en) 1989-07-20 1989-12-12 Method of manufacturing a sintered ceramic article
BE8901334A BE1003553A5 (fr) 1989-07-20 1989-12-14 Article en ceramique frittee et procede de fabrication d'un tel article.
FR898916669A FR2655978B1 (ja) 1989-07-20 1989-12-15
CA002005686A CA2005686C (en) 1989-07-20 1989-12-15 Sintered ceramic article and method of manufacturing the same
DE3941516A DE3941516C2 (de) 1989-07-20 1989-12-15 Verfahren zum Herstellen eines gesinterten Keramikartikels

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1188533A JP2632218B2 (ja) 1989-07-20 1989-07-20 セラミック焼結体の製造方法
GB8928030A GB2239028B (en) 1989-07-20 1989-12-12 Method of manufacturing a sintered ceramic article
CA002005686A CA2005686C (en) 1989-07-20 1989-12-15 Sintered ceramic article and method of manufacturing the same

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JPH0354159A JPH0354159A (ja) 1991-03-08
JP2632218B2 true JP2632218B2 (ja) 1997-07-23

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AU695583B2 (en) * 1996-08-01 1998-08-13 Smith International, Inc. Double cemented carbide inserts
US6454027B1 (en) 2000-03-09 2002-09-24 Smith International, Inc. Polycrystalline diamond carbide composites
US7017677B2 (en) 2002-07-24 2006-03-28 Smith International, Inc. Coarse carbide substrate cutting elements and method of forming the same
US7243744B2 (en) 2003-12-02 2007-07-17 Smith International, Inc. Randomly-oriented composite constructions
US7441610B2 (en) 2005-02-25 2008-10-28 Smith International, Inc. Ultrahard composite constructions
CN103304242B (zh) * 2013-06-13 2015-07-29 景德镇陶瓷学院 一种陶瓷烧结助剂的添加方法
JP6221663B2 (ja) * 2013-11-13 2017-11-01 東ソー株式会社 ジルコニア粉末
US12024435B2 (en) * 2018-02-13 2024-07-02 Mitsui Mining & Smelting Co., Ltd. Sintered metal carbide and heat-resistant member for silicon carbide semiconductor manufacturing device comprising same
CN112592179A (zh) * 2020-11-25 2021-04-02 科益展智能装备有限公司 一种梯度氧化锆陶瓷刀具材料及其制备方法
CN115043655B (zh) * 2022-06-18 2023-03-10 杭州新致美义齿研发有限公司 一种氧化锆假牙制备方法

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Also Published As

Publication number Publication date
FR2655978A1 (ja) 1991-06-21
GB2239028B (en) 1994-02-23
CA2005686C (en) 1996-11-05
DE3941516C2 (de) 1994-11-03
DE3941516A1 (de) 1991-06-20
GB2239028A (en) 1991-06-19
JPH0354159A (ja) 1991-03-08
GB8928030D0 (en) 1990-02-14
FR2655978B1 (ja) 1992-08-07
CA2005686A1 (en) 1991-06-15
BE1003553A5 (fr) 1992-04-21

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