JP2596208B2 - メモリ装置 - Google Patents

メモリ装置

Info

Publication number
JP2596208B2
JP2596208B2 JP2282826A JP28282690A JP2596208B2 JP 2596208 B2 JP2596208 B2 JP 2596208B2 JP 2282826 A JP2282826 A JP 2282826A JP 28282690 A JP28282690 A JP 28282690A JP 2596208 B2 JP2596208 B2 JP 2596208B2
Authority
JP
Japan
Prior art keywords
data
cell array
memory cell
redundant
register
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2282826A
Other languages
English (en)
Japanese (ja)
Other versions
JPH04157692A (ja
Inventor
靖陽 星野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP2282826A priority Critical patent/JP2596208B2/ja
Priority to DE69127527T priority patent/DE69127527T2/de
Priority to EP91117760A priority patent/EP0481494B1/en
Priority to KR1019910018375A priority patent/KR0138751B1/ko
Priority to US07/779,087 priority patent/US5343439A/en
Publication of JPH04157692A publication Critical patent/JPH04157692A/ja
Application granted granted Critical
Publication of JP2596208B2 publication Critical patent/JP2596208B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
JP2282826A 1990-10-19 1990-10-19 メモリ装置 Expired - Fee Related JP2596208B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2282826A JP2596208B2 (ja) 1990-10-19 1990-10-19 メモリ装置
DE69127527T DE69127527T2 (de) 1990-10-19 1991-10-17 Speicheranordnung
EP91117760A EP0481494B1 (en) 1990-10-19 1991-10-17 Memory apparatus
KR1019910018375A KR0138751B1 (ko) 1990-10-19 1991-10-18 메모리 장치
US07/779,087 US5343439A (en) 1990-10-19 1991-10-18 Memory apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2282826A JP2596208B2 (ja) 1990-10-19 1990-10-19 メモリ装置

Publications (2)

Publication Number Publication Date
JPH04157692A JPH04157692A (ja) 1992-05-29
JP2596208B2 true JP2596208B2 (ja) 1997-04-02

Family

ID=17657585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2282826A Expired - Fee Related JP2596208B2 (ja) 1990-10-19 1990-10-19 メモリ装置

Country Status (5)

Country Link
US (1) US5343439A (enExample)
EP (1) EP0481494B1 (enExample)
JP (1) JP2596208B2 (enExample)
KR (1) KR0138751B1 (enExample)
DE (1) DE69127527T2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940024597A (ko) * 1993-04-10 1994-11-18 김광호 듀얼포트 메모리장치의 시리얼데이타 입력장치.
JPH0713898A (ja) * 1993-06-29 1995-01-17 Mitsubishi Electric Corp 半導体集積回路装置
JPH07182893A (ja) * 1993-12-24 1995-07-21 Mitsubishi Electric Corp 半導体記憶装置
US5559753A (en) * 1995-01-25 1996-09-24 Dell Usa, L.P. Apparatus and method for preventing bus contention during power-up in a computer system with two or more DRAM banks
US5627786A (en) * 1995-02-10 1997-05-06 Micron Quantum Devices, Inc. Parallel processing redundancy scheme for faster access times and lower die area
US6108237A (en) * 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US5682496A (en) 1995-02-10 1997-10-28 Micron Quantum Devices, Inc. Filtered serial event controlled command port for memory
US5610873A (en) * 1996-03-21 1997-03-11 National Science Council Of R.O.C. Address generator for generating a plurality of addresses to be used in zig-zag scanning of contents of memory array
US6172935B1 (en) 1997-04-25 2001-01-09 Micron Technology, Inc. Synchronous dynamic random access memory device
US6728799B1 (en) * 2000-01-13 2004-04-27 Hewlett-Packard Development Company, L.P. Hybrid data I/O for memory applications
US6993105B1 (en) 2000-05-09 2006-01-31 Cypress Semiconductor Corp. Linearized digital phase-locked loop
US6950484B1 (en) 2000-05-12 2005-09-27 Cypress Semiconductor Corp. Linearized digital phase-locked loop method
US6711226B1 (en) 2000-05-12 2004-03-23 Cypress Semiconductor Corp. Linearized digital phase-locked loop
US6535023B1 (en) 2000-05-12 2003-03-18 Cypress Semiconductor Corp. Linearized digital phase-locked loop method
US6417698B1 (en) * 2000-05-12 2002-07-09 Cypress Semiconductor Corp. Linearized digital phase-locked loop method
KR100598010B1 (ko) * 2004-08-06 2006-07-06 삼성전자주식회사 클럭 분배기, 클럭 분배기를 포함한 시스템, 클럭 분배방법 및 클럭 분배를 이용한 데이터 읽기 및 쓰기 방법
US7826581B1 (en) 2004-10-05 2010-11-02 Cypress Semiconductor Corporation Linearized digital phase-locked loop method for maintaining end of packet time linearity
WO2008124123A1 (en) * 2007-04-05 2008-10-16 Glenn Bradley J Stabilized elongate implantable vascular access device
US8717831B2 (en) 2012-04-30 2014-05-06 Hewlett-Packard Development Company, L.P. Memory circuit
US20150318054A1 (en) * 2012-12-11 2015-11-05 Hewlett-Packard Development Company, L.P. Data Operation in Shift Register Ring

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4330852A (en) * 1979-11-23 1982-05-18 Texas Instruments Incorporated Semiconductor read/write memory array having serial access
JPH0760594B2 (ja) * 1987-06-25 1995-06-28 富士通株式会社 半導体記憶装置
US5195055A (en) * 1987-11-30 1993-03-16 Mitsubishi Denki Kabushiki Kaisha Serial data input circuit for the shifting-in of variable length data
JPH07107792B2 (ja) * 1988-01-19 1995-11-15 株式会社東芝 マルチポートメモリ
US4873671A (en) * 1988-01-28 1989-10-10 National Semiconductor Corporation Sequential read access of serial memories with a user defined starting address
JPH01224993A (ja) * 1988-03-04 1989-09-07 Nec Corp マルチポートメモリ
JPH0748316B2 (ja) * 1988-05-30 1995-05-24 日本電気株式会社 デュアルポートメモリ回路
US5084839A (en) * 1990-02-05 1992-01-28 Harris Corporation Variable length shift register

Also Published As

Publication number Publication date
EP0481494B1 (en) 1997-09-03
EP0481494A3 (enExample) 1994-12-14
DE69127527T2 (de) 1998-02-12
KR0138751B1 (ko) 1998-06-15
JPH04157692A (ja) 1992-05-29
DE69127527D1 (de) 1997-10-09
US5343439A (en) 1994-08-30
KR920008750A (ko) 1992-05-28
EP0481494A2 (en) 1992-04-22

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