JP2596208B2 - メモリ装置 - Google Patents
メモリ装置Info
- Publication number
- JP2596208B2 JP2596208B2 JP2282826A JP28282690A JP2596208B2 JP 2596208 B2 JP2596208 B2 JP 2596208B2 JP 2282826 A JP2282826 A JP 2282826A JP 28282690 A JP28282690 A JP 28282690A JP 2596208 B2 JP2596208 B2 JP 2596208B2
- Authority
- JP
- Japan
- Prior art keywords
- data
- cell array
- memory cell
- redundant
- register
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2282826A JP2596208B2 (ja) | 1990-10-19 | 1990-10-19 | メモリ装置 |
| DE69127527T DE69127527T2 (de) | 1990-10-19 | 1991-10-17 | Speicheranordnung |
| EP91117760A EP0481494B1 (en) | 1990-10-19 | 1991-10-17 | Memory apparatus |
| KR1019910018375A KR0138751B1 (ko) | 1990-10-19 | 1991-10-18 | 메모리 장치 |
| US07/779,087 US5343439A (en) | 1990-10-19 | 1991-10-18 | Memory apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2282826A JP2596208B2 (ja) | 1990-10-19 | 1990-10-19 | メモリ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04157692A JPH04157692A (ja) | 1992-05-29 |
| JP2596208B2 true JP2596208B2 (ja) | 1997-04-02 |
Family
ID=17657585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2282826A Expired - Fee Related JP2596208B2 (ja) | 1990-10-19 | 1990-10-19 | メモリ装置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5343439A (enExample) |
| EP (1) | EP0481494B1 (enExample) |
| JP (1) | JP2596208B2 (enExample) |
| KR (1) | KR0138751B1 (enExample) |
| DE (1) | DE69127527T2 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR940024597A (ko) * | 1993-04-10 | 1994-11-18 | 김광호 | 듀얼포트 메모리장치의 시리얼데이타 입력장치. |
| JPH0713898A (ja) * | 1993-06-29 | 1995-01-17 | Mitsubishi Electric Corp | 半導体集積回路装置 |
| JPH07182893A (ja) * | 1993-12-24 | 1995-07-21 | Mitsubishi Electric Corp | 半導体記憶装置 |
| US5559753A (en) * | 1995-01-25 | 1996-09-24 | Dell Usa, L.P. | Apparatus and method for preventing bus contention during power-up in a computer system with two or more DRAM banks |
| US5627786A (en) * | 1995-02-10 | 1997-05-06 | Micron Quantum Devices, Inc. | Parallel processing redundancy scheme for faster access times and lower die area |
| US6108237A (en) * | 1997-07-17 | 2000-08-22 | Micron Technology, Inc. | Fast-sensing amplifier for flash memory |
| US5682496A (en) | 1995-02-10 | 1997-10-28 | Micron Quantum Devices, Inc. | Filtered serial event controlled command port for memory |
| US5610873A (en) * | 1996-03-21 | 1997-03-11 | National Science Council Of R.O.C. | Address generator for generating a plurality of addresses to be used in zig-zag scanning of contents of memory array |
| US6172935B1 (en) | 1997-04-25 | 2001-01-09 | Micron Technology, Inc. | Synchronous dynamic random access memory device |
| US6728799B1 (en) * | 2000-01-13 | 2004-04-27 | Hewlett-Packard Development Company, L.P. | Hybrid data I/O for memory applications |
| US6993105B1 (en) | 2000-05-09 | 2006-01-31 | Cypress Semiconductor Corp. | Linearized digital phase-locked loop |
| US6950484B1 (en) | 2000-05-12 | 2005-09-27 | Cypress Semiconductor Corp. | Linearized digital phase-locked loop method |
| US6711226B1 (en) | 2000-05-12 | 2004-03-23 | Cypress Semiconductor Corp. | Linearized digital phase-locked loop |
| US6535023B1 (en) | 2000-05-12 | 2003-03-18 | Cypress Semiconductor Corp. | Linearized digital phase-locked loop method |
| US6417698B1 (en) * | 2000-05-12 | 2002-07-09 | Cypress Semiconductor Corp. | Linearized digital phase-locked loop method |
| KR100598010B1 (ko) * | 2004-08-06 | 2006-07-06 | 삼성전자주식회사 | 클럭 분배기, 클럭 분배기를 포함한 시스템, 클럭 분배방법 및 클럭 분배를 이용한 데이터 읽기 및 쓰기 방법 |
| US7826581B1 (en) | 2004-10-05 | 2010-11-02 | Cypress Semiconductor Corporation | Linearized digital phase-locked loop method for maintaining end of packet time linearity |
| WO2008124123A1 (en) * | 2007-04-05 | 2008-10-16 | Glenn Bradley J | Stabilized elongate implantable vascular access device |
| US8717831B2 (en) | 2012-04-30 | 2014-05-06 | Hewlett-Packard Development Company, L.P. | Memory circuit |
| US20150318054A1 (en) * | 2012-12-11 | 2015-11-05 | Hewlett-Packard Development Company, L.P. | Data Operation in Shift Register Ring |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4330852A (en) * | 1979-11-23 | 1982-05-18 | Texas Instruments Incorporated | Semiconductor read/write memory array having serial access |
| JPH0760594B2 (ja) * | 1987-06-25 | 1995-06-28 | 富士通株式会社 | 半導体記憶装置 |
| US5195055A (en) * | 1987-11-30 | 1993-03-16 | Mitsubishi Denki Kabushiki Kaisha | Serial data input circuit for the shifting-in of variable length data |
| JPH07107792B2 (ja) * | 1988-01-19 | 1995-11-15 | 株式会社東芝 | マルチポートメモリ |
| US4873671A (en) * | 1988-01-28 | 1989-10-10 | National Semiconductor Corporation | Sequential read access of serial memories with a user defined starting address |
| JPH01224993A (ja) * | 1988-03-04 | 1989-09-07 | Nec Corp | マルチポートメモリ |
| JPH0748316B2 (ja) * | 1988-05-30 | 1995-05-24 | 日本電気株式会社 | デュアルポートメモリ回路 |
| US5084839A (en) * | 1990-02-05 | 1992-01-28 | Harris Corporation | Variable length shift register |
-
1990
- 1990-10-19 JP JP2282826A patent/JP2596208B2/ja not_active Expired - Fee Related
-
1991
- 1991-10-17 DE DE69127527T patent/DE69127527T2/de not_active Expired - Fee Related
- 1991-10-17 EP EP91117760A patent/EP0481494B1/en not_active Expired - Lifetime
- 1991-10-18 KR KR1019910018375A patent/KR0138751B1/ko not_active Expired - Fee Related
- 1991-10-18 US US07/779,087 patent/US5343439A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0481494B1 (en) | 1997-09-03 |
| EP0481494A3 (enExample) | 1994-12-14 |
| DE69127527T2 (de) | 1998-02-12 |
| KR0138751B1 (ko) | 1998-06-15 |
| JPH04157692A (ja) | 1992-05-29 |
| DE69127527D1 (de) | 1997-10-09 |
| US5343439A (en) | 1994-08-30 |
| KR920008750A (ko) | 1992-05-28 |
| EP0481494A2 (en) | 1992-04-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
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| R350 | Written notification of registration of transfer |
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|
| FPAY | Renewal fee payment (event date is renewal date of database) |
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| FPAY | Renewal fee payment (event date is renewal date of database) |
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| FPAY | Renewal fee payment (event date is renewal date of database) |
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| LAPS | Cancellation because of no payment of annual fees |