JP2022550171A5 - - Google Patents
Info
- Publication number
- JP2022550171A5 JP2022550171A5 JP2022519790A JP2022519790A JP2022550171A5 JP 2022550171 A5 JP2022550171 A5 JP 2022550171A5 JP 2022519790 A JP2022519790 A JP 2022519790A JP 2022519790 A JP2022519790 A JP 2022519790A JP 2022550171 A5 JP2022550171 A5 JP 2022550171A5
- Authority
- JP
- Japan
- Prior art keywords
- formula
- compound
- composition according
- pure
- mass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023165894A JP7695316B2 (ja) | 2019-09-30 | 2023-09-27 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
| JP2025028667A JP2025087745A (ja) | 2019-09-30 | 2025-02-26 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962908083P | 2019-09-30 | 2019-09-30 | |
| US62/908,083 | 2019-09-30 | ||
| PCT/US2020/052999 WO2021067150A1 (en) | 2019-09-30 | 2020-09-28 | Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023165894A Division JP7695316B2 (ja) | 2019-09-30 | 2023-09-27 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022550171A JP2022550171A (ja) | 2022-11-30 |
| JP2022550171A5 true JP2022550171A5 (https=) | 2023-10-05 |
| JP7566895B2 JP7566895B2 (ja) | 2024-10-15 |
Family
ID=75338528
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022519790A Active JP7566895B2 (ja) | 2019-09-30 | 2020-09-28 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
| JP2023165894A Active JP7695316B2 (ja) | 2019-09-30 | 2023-09-27 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
| JP2025028667A Withdrawn JP2025087745A (ja) | 2019-09-30 | 2025-02-26 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023165894A Active JP7695316B2 (ja) | 2019-09-30 | 2023-09-27 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
| JP2025028667A Withdrawn JP2025087745A (ja) | 2019-09-30 | 2025-02-26 | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (3) | JP7566895B2 (https=) |
| KR (1) | KR102874253B1 (https=) |
| CN (1) | CN114466852A (https=) |
| TW (1) | TWI864116B (https=) |
| WO (1) | WO2021067150A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117616102A (zh) * | 2021-05-21 | 2024-02-27 | 弗萨姆材料美国有限责任公司 | 用于在半导体器件制造期间从硅-锗/硅堆叠选择性地去除硅-锗合金的蚀刻溶液 |
| US12595413B2 (en) | 2022-05-13 | 2026-04-07 | Entegris, Inc. | Silicon nitride etching compositions and method |
| WO2023230394A1 (en) * | 2022-05-23 | 2023-11-30 | Versum Materials Us, Llc | Formulated alkaline chemistry for polysilicon exhume |
| CN120835921A (zh) * | 2023-03-15 | 2025-10-24 | 恩特格里斯公司 | 用于选择性蚀刻氮化硅的组合物和方法 |
| KR102794133B1 (ko) * | 2023-11-27 | 2025-04-15 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각용 조성물 |
| US20260092212A1 (en) * | 2024-09-27 | 2026-04-02 | Entegris, Inc. | Selective etch inhibitor compounds and related methods |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040055685A (ko) * | 2002-12-20 | 2004-06-26 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 전자 디바이스 제조 |
| US10138117B2 (en) * | 2013-07-31 | 2018-11-27 | Entegris, Inc. | Aqueous formulations for removing metal hard mask and post-etch residue with Cu/W compatibility |
| US10269591B2 (en) * | 2013-10-23 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of selectively removing silicon nitride and single wafer etching apparatus thereof |
| US9850402B2 (en) * | 2013-12-09 | 2017-12-26 | Cabot Microelectronics Corporation | CMP compositions and methods for selective removal of silicon nitride |
| JP6580397B2 (ja) * | 2014-07-17 | 2019-09-25 | ソウルブレイン シーオー．， エルティーディー． | エッチング用組成物及びこれを用いた半導体素子の製造方法 |
| US9868902B2 (en) | 2014-07-17 | 2018-01-16 | Soulbrain Co., Ltd. | Composition for etching |
| KR101728951B1 (ko) * | 2015-06-25 | 2017-04-21 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 |
| JP6446003B2 (ja) * | 2015-08-27 | 2018-12-26 | 東芝メモリ株式会社 | 基板処理装置、基板処理方法およびエッチング液 |
| KR102415960B1 (ko) * | 2016-02-05 | 2022-07-01 | 동우 화인켐 주식회사 | 실리콘 질화막 식각액 조성물 및 이를 이용하는 반도체 소자 및 tft 어레이 기판의 제조방법 |
| CN107345137A (zh) * | 2016-05-04 | 2017-11-14 | Oci有限公司 | 能够抑制颗粒出现的蚀刻溶液 |
| KR102424391B1 (ko) * | 2016-11-24 | 2022-08-05 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
| US10995269B2 (en) * | 2016-11-24 | 2021-05-04 | Samsung Electronics Co., Ltd. | Etchant composition and method of fabricating integrated circuit device using the same |
| CN110028971B (zh) * | 2017-12-28 | 2021-11-09 | Oci有限公司 | 蚀刻组合物及利用其的蚀刻方法 |
| KR102484988B1 (ko) * | 2017-12-29 | 2023-01-09 | 오씨아이 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
-
2020
- 2020-09-28 TW TW109133617A patent/TWI864116B/zh active
- 2020-09-28 CN CN202080068430.0A patent/CN114466852A/zh active Pending
- 2020-09-28 JP JP2022519790A patent/JP7566895B2/ja active Active
- 2020-09-28 KR KR1020227014745A patent/KR102874253B1/ko active Active
- 2020-09-28 WO PCT/US2020/052999 patent/WO2021067150A1/en not_active Ceased
-
2023
- 2023-09-27 JP JP2023165894A patent/JP7695316B2/ja active Active
-
2025
- 2025-02-26 JP JP2025028667A patent/JP2025087745A/ja not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022550171A5 (https=) | ||
| KR102511607B1 (ko) | 식각 조성물, 식각 방법 및 반도체 소자 | |
| KR101097275B1 (ko) | 실리콘질화막에 대한 고선택비 식각용 조성물 | |
| KR102415960B1 (ko) | 실리콘 질화막 식각액 조성물 및 이를 이용하는 반도체 소자 및 tft 어레이 기판의 제조방법 | |
| KR102443370B1 (ko) | 실리콘 질화막 식각액 조성물 | |
| CN113817471B (zh) | 用于蚀刻含氮化硅衬底的组合物及方法 | |
| JP7365140B2 (ja) | エッチング液組成物、絶縁膜のエッチング方法、半導体素子の製造方法及びシラン化合物 | |
| JP7695316B2 (ja) | 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法 | |
| KR102484988B1 (ko) | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 | |
| CN110229720B (zh) | 半导体工艺用组合物及半导体工艺 | |
| KR102484977B1 (ko) | 식각 조성물 및 이를 이용한 식각 방법 | |
| JP2023184483A5 (https=) | ||
| TW202000744A (zh) | 聚矽氧烷類化合物、添加劑、包含所述聚矽氧烷類化合物的氮化矽層蝕刻組合物、及使用所述組合物製造半導體裝置的方法 | |
| CN110028971A (zh) | 蚀刻组合物及利用其的蚀刻方法 | |
| JP5548224B2 (ja) | 半導体基板製品の製造方法及びエッチング液 | |
| KR20190005459A (ko) | 식각 조성물 및 이를 이용한 식각 방법 | |
| JP2025517471A5 (https=) | ||
| TW202206584A (zh) | 用於去除蝕刻殘餘物的清洗液 | |
| WO2023163002A1 (ja) | 組成物、並びにこれを用いた半導体基板の製造方法およびエッチング方法 | |
| JP2005203467A (ja) | エッチング用組成物 | |
| JP2021034737A (ja) | エッチング組成物、それを用いた絶縁膜のエッチング方法、及び半導体素子の製造方法 | |
| CN112442372B (zh) | 蚀刻组合物，使用其蚀刻半导体器件的绝缘膜的方法以及制备半导体器件的方法 | |
| JP2020198430A (ja) | エッチング組成物、これを用いた絶縁膜エッチング方法及び半導体素子の製造方法、並びに新規化合物 | |
| WO2026022021A1 (en) | Composition, its use and a process for selectively etching silicon-germanium layers | |
| US20200331936A1 (en) | Novel silicon compound |