KR102874253B1 - 반도체 소자의 제조 중 질화규소를 선택적으로 제거하기 위한 에칭 조성물 및 방법 - Google Patents
반도체 소자의 제조 중 질화규소를 선택적으로 제거하기 위한 에칭 조성물 및 방법Info
- Publication number
- KR102874253B1 KR102874253B1 KR1020227014745A KR20227014745A KR102874253B1 KR 102874253 B1 KR102874253 B1 KR 102874253B1 KR 1020227014745 A KR1020227014745 A KR 1020227014745A KR 20227014745 A KR20227014745 A KR 20227014745A KR 102874253 B1 KR102874253 B1 KR 102874253B1
- Authority
- KR
- South Korea
- Prior art keywords
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- compound
- etching composition
- group
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0834—Compounds having one or more O-Si linkage
- C07F7/0836—Compounds with one or more Si-OH or Si-O-metal linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0834—Compounds having one or more O-Si linkage
- C07F7/0838—Compounds with one or more Si-O-Si sequences
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/06—Phosphorus compounds without P—C bonds
- C07F9/08—Esters of oxyacids of phosphorus
- C07F9/09—Esters of phosphoric acids
- C07F9/091—Esters of phosphoric acids with hydroxyalkyl compounds with further substituents on alkyl
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H01L21/31122—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
- H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/68—Wet etching of insulating materials
- H10P50/683—Wet etching of insulating materials of inorganic materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Biochemistry (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962908083P | 2019-09-30 | 2019-09-30 | |
| US62/908,083 | 2019-09-30 | ||
| PCT/US2020/052999 WO2021067150A1 (en) | 2019-09-30 | 2020-09-28 | Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20220073813A KR20220073813A (ko) | 2022-06-03 |
| KR102874253B1 true KR102874253B1 (ko) | 2025-10-20 |
Family
ID=75338528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020227014745A Active KR102874253B1 (ko) | 2019-09-30 | 2020-09-28 | 반도체 소자의 제조 중 질화규소를 선택적으로 제거하기 위한 에칭 조성물 및 방법 |
Country Status (5)
| Country | Link |
|---|---|
| JP (3) | JP7566895B2 (https=) |
| KR (1) | KR102874253B1 (https=) |
| CN (1) | CN114466852A (https=) |
| TW (1) | TWI864116B (https=) |
| WO (1) | WO2021067150A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240011174A (ko) * | 2021-05-21 | 2024-01-25 | 버슘머트리얼즈 유에스, 엘엘씨 | 반도체 디바이스의 제조 동안 규소-게르마늄/규소 스택으로부터 규소-게르마늄 합금을 선택적으로 제거하기 위한 에칭 용액 |
| JP2025515839A (ja) | 2022-05-13 | 2025-05-20 | インテグリス・インコーポレーテッド | 窒化ケイ素エッチング組成物および方法 |
| WO2023230394A1 (en) * | 2022-05-23 | 2023-11-30 | Versum Materials Us, Llc | Formulated alkaline chemistry for polysilicon exhume |
| KR20250161006A (ko) * | 2023-03-15 | 2025-11-14 | 엔테그리스, 아이엔씨. | 실리콘 질화물을 선택적으로 에칭하기 위한 조성물 및 방법 |
| KR102794133B1 (ko) * | 2023-11-27 | 2025-04-15 | 주식회사 이엔에프테크놀로지 | 실리콘 질화막 식각용 조성물 |
| US20260092212A1 (en) * | 2024-09-27 | 2026-04-02 | Entegris, Inc. | Selective etch inhibitor compounds and related methods |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160017224A1 (en) | 2014-07-17 | 2016-01-21 | Soulbrain Co., Ltd. | Composition for etching |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004207731A (ja) * | 2002-12-20 | 2004-07-22 | Rohm & Haas Electronic Materials Llc | 電子デバイスの製造 |
| KR102338526B1 (ko) * | 2013-07-31 | 2021-12-14 | 엔테그리스, 아이엔씨. | Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형 |
| US10269591B2 (en) * | 2013-10-23 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of selectively removing silicon nitride and single wafer etching apparatus thereof |
| US9850402B2 (en) * | 2013-12-09 | 2017-12-26 | Cabot Microelectronics Corporation | CMP compositions and methods for selective removal of silicon nitride |
| JP6580397B2 (ja) * | 2014-07-17 | 2019-09-25 | ソウルブレイン シーオー．， エルティーディー． | エッチング用組成物及びこれを用いた半導体素子の製造方法 |
| KR101728951B1 (ko) * | 2015-06-25 | 2017-04-21 | 오씨아이 주식회사 | 실리콘 질화막 식각 용액 |
| JP6446003B2 (ja) * | 2015-08-27 | 2018-12-26 | 東芝メモリ株式会社 | 基板処理装置、基板処理方法およびエッチング液 |
| KR102415960B1 (ko) * | 2016-02-05 | 2022-07-01 | 동우 화인켐 주식회사 | 실리콘 질화막 식각액 조성물 및 이를 이용하는 반도체 소자 및 tft 어레이 기판의 제조방법 |
| CN107345137A (zh) * | 2016-05-04 | 2017-11-14 | Oci有限公司 | 能够抑制颗粒出现的蚀刻溶液 |
| US10995269B2 (en) * | 2016-11-24 | 2021-05-04 | Samsung Electronics Co., Ltd. | Etchant composition and method of fabricating integrated circuit device using the same |
| KR102424391B1 (ko) * | 2016-11-24 | 2022-08-05 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 집적회로 소자의 제조 방법 |
| CN110028971B (zh) * | 2017-12-28 | 2021-11-09 | Oci有限公司 | 蚀刻组合物及利用其的蚀刻方法 |
| KR102484988B1 (ko) * | 2017-12-29 | 2023-01-09 | 오씨아이 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
-
2020
- 2020-09-28 TW TW109133617A patent/TWI864116B/zh active
- 2020-09-28 KR KR1020227014745A patent/KR102874253B1/ko active Active
- 2020-09-28 CN CN202080068430.0A patent/CN114466852A/zh active Pending
- 2020-09-28 JP JP2022519790A patent/JP7566895B2/ja active Active
- 2020-09-28 WO PCT/US2020/052999 patent/WO2021067150A1/en not_active Ceased
-
2023
- 2023-09-27 JP JP2023165894A patent/JP7695316B2/ja active Active
-
2025
- 2025-02-26 JP JP2025028667A patent/JP2025087745A/ja not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160017224A1 (en) | 2014-07-17 | 2016-01-21 | Soulbrain Co., Ltd. | Composition for etching |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023171856A (ja) | 2023-12-05 |
| JP7695316B2 (ja) | 2025-06-18 |
| JP2022550171A (ja) | 2022-11-30 |
| WO2021067150A1 (en) | 2021-04-08 |
| JP2025087745A (ja) | 2025-06-10 |
| KR20220073813A (ko) | 2022-06-03 |
| CN114466852A (zh) | 2022-05-10 |
| JP7566895B2 (ja) | 2024-10-15 |
| TWI864116B (zh) | 2024-12-01 |
| TW202128722A (zh) | 2021-08-01 |
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