CN114466852A - 在半导体器件制造过程中选择性去除氮化硅的蚀刻组合物和方法 - Google Patents

在半导体器件制造过程中选择性去除氮化硅的蚀刻组合物和方法 Download PDF

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Publication number
CN114466852A
CN114466852A CN202080068430.0A CN202080068430A CN114466852A CN 114466852 A CN114466852 A CN 114466852A CN 202080068430 A CN202080068430 A CN 202080068430A CN 114466852 A CN114466852 A CN 114466852A
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China
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composition
neat
weight
sulfuric acid
compound
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CN202080068430.0A
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English (en)
Chinese (zh)
Inventor
葛智逵
李翊嘉
刘文达
吴爱萍
孙来生
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Versum Materials US LLC
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Versum Materials US LLC
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/06—Phosphorus compounds without P—C bonds
    • C07F9/08—Esters of oxyacids of phosphorus
    • C07F9/09—Esters of phosphoric acids
    • C07F9/091—Esters of phosphoric acids with hydroxyalkyl compounds with further substituents on alkyl
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0834—Compounds having one or more O-Si linkage
    • C07F7/0836—Compounds with one or more Si-OH or Si-O-metal linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0834—Compounds having one or more O-Si linkage
    • C07F7/0838—Compounds with one or more Si-O-Si sequences
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/68—Wet etching of insulating materials
    • H10P50/683—Wet etching of insulating materials of inorganic materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
CN202080068430.0A 2019-09-30 2020-09-28 在半导体器件制造过程中选择性去除氮化硅的蚀刻组合物和方法 Pending CN114466852A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962908083P 2019-09-30 2019-09-30
US62/908,083 2019-09-30
PCT/US2020/052999 WO2021067150A1 (en) 2019-09-30 2020-09-28 Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device

Publications (1)

Publication Number Publication Date
CN114466852A true CN114466852A (zh) 2022-05-10

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CN202080068430.0A Pending CN114466852A (zh) 2019-09-30 2020-09-28 在半导体器件制造过程中选择性去除氮化硅的蚀刻组合物和方法

Country Status (5)

Country Link
JP (3) JP7566895B2 (https=)
KR (1) KR102874253B1 (https=)
CN (1) CN114466852A (https=)
TW (1) TWI864116B (https=)
WO (1) WO2021067150A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240011174A (ko) * 2021-05-21 2024-01-25 버슘머트리얼즈 유에스, 엘엘씨 반도체 디바이스의 제조 동안 규소-게르마늄/규소 스택으로부터 규소-게르마늄 합금을 선택적으로 제거하기 위한 에칭 용액
JP2025515839A (ja) 2022-05-13 2025-05-20 インテグリス・インコーポレーテッド 窒化ケイ素エッチング組成物および方法
WO2023230394A1 (en) * 2022-05-23 2023-11-30 Versum Materials Us, Llc Formulated alkaline chemistry for polysilicon exhume
KR20250161006A (ko) * 2023-03-15 2025-11-14 엔테그리스, 아이엔씨. 실리콘 질화물을 선택적으로 에칭하기 위한 조성물 및 방법
KR102794133B1 (ko) * 2023-11-27 2025-04-15 주식회사 이엔에프테크놀로지 실리콘 질화막 식각용 조성물
US20260092212A1 (en) * 2024-09-27 2026-04-02 Entegris, Inc. Selective etch inhibitor compounds and related methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576313A (zh) * 2013-10-23 2015-04-29 台湾积体电路制造股份有限公司 选择性地去除氮化硅的方法及其单晶圆蚀刻装置
CN105431506A (zh) * 2013-07-31 2016-03-23 高级技术材料公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
CN108102654A (zh) * 2016-11-24 2018-06-01 三星电子株式会社 蚀刻剂组合物以及使用其制造集成电路器件的方法
CN110028971A (zh) * 2017-12-28 2019-07-19 Oci有限公司 蚀刻组合物及利用其的蚀刻方法

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JP2004207731A (ja) * 2002-12-20 2004-07-22 Rohm & Haas Electronic Materials Llc 電子デバイスの製造
US9850402B2 (en) * 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
JP6580397B2 (ja) * 2014-07-17 2019-09-25 ソウルブレイン シーオー．， エルティーディー． エッチング用組成物及びこれを用いた半導体素子の製造方法
US9868902B2 (en) * 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
KR101728951B1 (ko) * 2015-06-25 2017-04-21 오씨아이 주식회사 실리콘 질화막 식각 용액
JP6446003B2 (ja) * 2015-08-27 2018-12-26 東芝メモリ株式会社 基板処理装置、基板処理方法およびエッチング液
KR102415960B1 (ko) * 2016-02-05 2022-07-01 동우 화인켐 주식회사 실리콘 질화막 식각액 조성물 및 이를 이용하는 반도체 소자 및 tft 어레이 기판의 제조방법
CN107345137A (zh) * 2016-05-04 2017-11-14 Oci有限公司 能够抑制颗粒出现的蚀刻溶液
KR102424391B1 (ko) * 2016-11-24 2022-08-05 삼성전자주식회사 식각 조성물 및 이를 이용한 집적회로 소자의 제조 방법
KR102484988B1 (ko) * 2017-12-29 2023-01-09 오씨아이 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105431506A (zh) * 2013-07-31 2016-03-23 高级技术材料公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
CN104576313A (zh) * 2013-10-23 2015-04-29 台湾积体电路制造股份有限公司 选择性地去除氮化硅的方法及其单晶圆蚀刻装置
CN108102654A (zh) * 2016-11-24 2018-06-01 三星电子株式会社 蚀刻剂组合物以及使用其制造集成电路器件的方法
CN110028971A (zh) * 2017-12-28 2019-07-19 Oci有限公司 蚀刻组合物及利用其的蚀刻方法

Also Published As

Publication number Publication date
JP2023171856A (ja) 2023-12-05
JP7695316B2 (ja) 2025-06-18
JP2022550171A (ja) 2022-11-30
WO2021067150A1 (en) 2021-04-08
JP2025087745A (ja) 2025-06-10
KR20220073813A (ko) 2022-06-03
JP7566895B2 (ja) 2024-10-15
TWI864116B (zh) 2024-12-01
TW202128722A (zh) 2021-08-01
KR102874253B1 (ko) 2025-10-20

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