CN114466852A - 在半导体器件制造过程中选择性去除氮化硅的蚀刻组合物和方法 - Google Patents

在半导体器件制造过程中选择性去除氮化硅的蚀刻组合物和方法 Download PDF

Info

Publication number
CN114466852A
CN114466852A CN202080068430.0A CN202080068430A CN114466852A CN 114466852 A CN114466852 A CN 114466852A CN 202080068430 A CN202080068430 A CN 202080068430A CN 114466852 A CN114466852 A CN 114466852A
Authority
CN
China
Prior art keywords
composition
neat
weight
sulfuric acid
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080068430.0A
Other languages
English (en)
Chinese (zh)
Inventor
葛智逵
李翊嘉
刘文达
吴爱萍
孙来生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Versum Materials US LLC
Original Assignee
Versum Materials US LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials US LLC filed Critical Versum Materials US LLC
Publication of CN114466852A publication Critical patent/CN114466852A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/06—Phosphorus compounds without P—C bonds
    • C07F9/08—Esters of oxyacids of phosphorus
    • C07F9/09—Esters of phosphoric acids
    • C07F9/091—Esters of phosphoric acids with hydroxyalkyl compounds with further substituents on alkyl
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0834—Compounds having one or more O-Si linkage
    • C07F7/0836—Compounds with one or more Si-OH or Si-O-metal linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0834—Compounds having one or more O-Si linkage
    • C07F7/0838—Compounds with one or more Si-O-Si sequences
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/68—Wet etching of insulating materials
    • H10P50/683—Wet etching of insulating materials of inorganic materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
CN202080068430.0A 2019-09-30 2020-09-28 在半导体器件制造过程中选择性去除氮化硅的蚀刻组合物和方法 Pending CN114466852A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962908083P 2019-09-30 2019-09-30
US62/908,083 2019-09-30
PCT/US2020/052999 WO2021067150A1 (en) 2019-09-30 2020-09-28 Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device

Publications (1)

Publication Number Publication Date
CN114466852A true CN114466852A (zh) 2022-05-10

Family

ID=75338528

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080068430.0A Pending CN114466852A (zh) 2019-09-30 2020-09-28 在半导体器件制造过程中选择性去除氮化硅的蚀刻组合物和方法

Country Status (5)

Country Link
JP (3) JP7566895B2 (https=)
KR (1) KR102874253B1 (https=)
CN (1) CN114466852A (https=)
TW (1) TWI864116B (https=)
WO (1) WO2021067150A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117616102A (zh) * 2021-05-21 2024-02-27 弗萨姆材料美国有限责任公司 用于在半导体器件制造期间从硅-锗/硅堆叠选择性地去除硅-锗合金的蚀刻溶液
US12595413B2 (en) 2022-05-13 2026-04-07 Entegris, Inc. Silicon nitride etching compositions and method
WO2023230394A1 (en) * 2022-05-23 2023-11-30 Versum Materials Us, Llc Formulated alkaline chemistry for polysilicon exhume
CN120835921A (zh) * 2023-03-15 2025-10-24 恩特格里斯公司 用于选择性蚀刻氮化硅的组合物和方法
KR102794133B1 (ko) * 2023-11-27 2025-04-15 주식회사 이엔에프테크놀로지 실리콘 질화막 식각용 조성물
US20260092212A1 (en) * 2024-09-27 2026-04-02 Entegris, Inc. Selective etch inhibitor compounds and related methods

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576313A (zh) * 2013-10-23 2015-04-29 台湾积体电路制造股份有限公司 选择性地去除氮化硅的方法及其单晶圆蚀刻装置
CN105431506A (zh) * 2013-07-31 2016-03-23 高级技术材料公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
CN108102654A (zh) * 2016-11-24 2018-06-01 三星电子株式会社 蚀刻剂组合物以及使用其制造集成电路器件的方法
CN110028971A (zh) * 2017-12-28 2019-07-19 Oci有限公司 蚀刻组合物及利用其的蚀刻方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040055685A (ko) * 2002-12-20 2004-06-26 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 전자 디바이스 제조
US9850402B2 (en) * 2013-12-09 2017-12-26 Cabot Microelectronics Corporation CMP compositions and methods for selective removal of silicon nitride
JP6580397B2 (ja) * 2014-07-17 2019-09-25 ソウルブレイン シーオー．， エルティーディー． エッチング用組成物及びこれを用いた半導体素子の製造方法
US9868902B2 (en) 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
KR101728951B1 (ko) * 2015-06-25 2017-04-21 오씨아이 주식회사 실리콘 질화막 식각 용액
JP6446003B2 (ja) * 2015-08-27 2018-12-26 東芝メモリ株式会社 基板処理装置、基板処理方法およびエッチング液
KR102415960B1 (ko) * 2016-02-05 2022-07-01 동우 화인켐 주식회사 실리콘 질화막 식각액 조성물 및 이를 이용하는 반도체 소자 및 tft 어레이 기판의 제조방법
CN107345137A (zh) * 2016-05-04 2017-11-14 Oci有限公司 能够抑制颗粒出现的蚀刻溶液
KR102424391B1 (ko) * 2016-11-24 2022-08-05 삼성전자주식회사 식각 조성물 및 이를 이용한 집적회로 소자의 제조 방법
KR102484988B1 (ko) * 2017-12-29 2023-01-09 오씨아이 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105431506A (zh) * 2013-07-31 2016-03-23 高级技术材料公司 用于去除金属硬掩模和蚀刻后残余物的具有Cu/W相容性的水性制剂
CN104576313A (zh) * 2013-10-23 2015-04-29 台湾积体电路制造股份有限公司 选择性地去除氮化硅的方法及其单晶圆蚀刻装置
CN108102654A (zh) * 2016-11-24 2018-06-01 三星电子株式会社 蚀刻剂组合物以及使用其制造集成电路器件的方法
CN110028971A (zh) * 2017-12-28 2019-07-19 Oci有限公司 蚀刻组合物及利用其的蚀刻方法

Also Published As

Publication number Publication date
JP2025087745A (ja) 2025-06-10
JP2022550171A (ja) 2022-11-30
JP7566895B2 (ja) 2024-10-15
WO2021067150A1 (en) 2021-04-08
JP2023171856A (ja) 2023-12-05
KR20220073813A (ko) 2022-06-03
TW202128722A (zh) 2021-08-01
KR102874253B1 (ko) 2025-10-20
JP7695316B2 (ja) 2025-06-18
TWI864116B (zh) 2024-12-01

Similar Documents

Publication Publication Date Title
JP7282938B2 (ja) 窒化ケイ素含有基板をエッチングするための組成物および方法
JP7695316B2 (ja) 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法
JP7015214B2 (ja) 半導体デバイスの製造中に窒化ケイ素を選択的に除去するためのエッチング溶液
JP7725368B2 (ja) 半導体装置の製造の間に窒化ケイ素を選択的に除去するためのエッチング溶液及び方法
JP6550123B2 (ja) エッチング組成物
US12110435B2 (en) Etching composition and method for selectively removing silicon nitride during manufacture of a semiconductor device
JP7766020B2 (ja) エッチング組成物
US20250304856A1 (en) Formulated Alkaline Chemistry For Polysilicon Exhume

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination