TWI864116B - 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法 - Google Patents

用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法 Download PDF

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TWI864116B
TWI864116B TW109133617A TW109133617A TWI864116B TW I864116 B TWI864116 B TW I864116B TW 109133617 A TW109133617 A TW 109133617A TW 109133617 A TW109133617 A TW 109133617A TW I864116 B TWI864116 B TW I864116B
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composition
formula
compound
straight chain
alkyl
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TW109133617A
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TW202128722A (zh
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葛智逵
李翊嘉
劉文達
愛萍 吳
來生 孫
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美商慧盛材料美國有限責任公司
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0834—Compounds having one or more O-Si linkage
    • C07F7/0836—Compounds with one or more Si-OH or Si-O-metal linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0834—Compounds having one or more O-Si linkage
    • C07F7/0838—Compounds with one or more Si-O-Si sequences
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
    • C07F7/1804—Compounds having Si-O-C linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/06—Phosphorus compounds without P—C bonds
    • C07F9/08—Esters of oxyacids of phosphorus
    • C07F9/09—Esters of phosphoric acids
    • C07F9/091—Esters of phosphoric acids with hydroxyalkyl compounds with further substituents on alkyl
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/68—Wet etching of insulating materials
    • H10P50/683—Wet etching of insulating materials of inorganic materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Biochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
TW109133617A 2019-09-30 2020-09-28 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法 TWI864116B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201962908083P 2019-09-30 2019-09-30
US62/908,083 2019-09-30

Publications (2)

Publication Number Publication Date
TW202128722A TW202128722A (zh) 2021-08-01
TWI864116B true TWI864116B (zh) 2024-12-01

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TW109133617A TWI864116B (zh) 2019-09-30 2020-09-28 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法

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JP (3) JP7566895B2 (https=)
KR (1) KR102874253B1 (https=)
CN (1) CN114466852A (https=)
TW (1) TWI864116B (https=)
WO (1) WO2021067150A1 (https=)

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KR20240011174A (ko) * 2021-05-21 2024-01-25 버슘머트리얼즈 유에스, 엘엘씨 반도체 디바이스의 제조 동안 규소-게르마늄/규소 스택으로부터 규소-게르마늄 합금을 선택적으로 제거하기 위한 에칭 용액
JP2025515839A (ja) 2022-05-13 2025-05-20 インテグリス・インコーポレーテッド 窒化ケイ素エッチング組成物および方法
WO2023230394A1 (en) * 2022-05-23 2023-11-30 Versum Materials Us, Llc Formulated alkaline chemistry for polysilicon exhume
KR20250161006A (ko) * 2023-03-15 2025-11-14 엔테그리스, 아이엔씨. 실리콘 질화물을 선택적으로 에칭하기 위한 조성물 및 방법
KR102794133B1 (ko) * 2023-11-27 2025-04-15 주식회사 이엔에프테크놀로지 실리콘 질화막 식각용 조성물
US20260092212A1 (en) * 2024-09-27 2026-04-02 Entegris, Inc. Selective etch inhibitor compounds and related methods

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CN108102654A (zh) * 2016-11-24 2018-06-01 三星电子株式会社 蚀刻剂组合物以及使用其制造集成电路器件的方法
CN110028971A (zh) * 2017-12-28 2019-07-19 Oci有限公司 蚀刻组合物及利用其的蚀刻方法

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KR102338526B1 (ko) * 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
US10269591B2 (en) * 2013-10-23 2019-04-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method of selectively removing silicon nitride and single wafer etching apparatus thereof
JP6580397B2 (ja) * 2014-07-17 2019-09-25 ソウルブレイン シーオー．， エルティーディー． エッチング用組成物及びこれを用いた半導体素子の製造方法
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JP6446003B2 (ja) * 2015-08-27 2018-12-26 東芝メモリ株式会社 基板処理装置、基板処理方法およびエッチング液
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CN108102654A (zh) * 2016-11-24 2018-06-01 三星电子株式会社 蚀刻剂组合物以及使用其制造集成电路器件的方法
CN110028971A (zh) * 2017-12-28 2019-07-19 Oci有限公司 蚀刻组合物及利用其的蚀刻方法

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Publication number Publication date
JP2023171856A (ja) 2023-12-05
JP7695316B2 (ja) 2025-06-18
JP2022550171A (ja) 2022-11-30
WO2021067150A1 (en) 2021-04-08
JP2025087745A (ja) 2025-06-10
KR20220073813A (ko) 2022-06-03
CN114466852A (zh) 2022-05-10
JP7566895B2 (ja) 2024-10-15
TW202128722A (zh) 2021-08-01
KR102874253B1 (ko) 2025-10-20

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