JP2022149402A5 - - Google Patents
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- JP2022149402A5 JP2022149402A5 JP2021051536A JP2021051536A JP2022149402A5 JP 2022149402 A5 JP2022149402 A5 JP 2022149402A5 JP 2021051536 A JP2021051536 A JP 2021051536A JP 2021051536 A JP2021051536 A JP 2021051536A JP 2022149402 A5 JP2022149402 A5 JP 2022149402A5
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- JP
- Japan
- Prior art keywords
- region
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- semiconductor layer
- conductivity type
- semiconductor device
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims 39
- 210000000746 body region Anatomy 0.000 claims 23
- 230000002093 peripheral effect Effects 0.000 claims 12
- 239000012535 impurity Substances 0.000 claims 11
- 238000009792 diffusion process Methods 0.000 claims 5
- 238000000151 deposition Methods 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 2
- 238000009826 distribution Methods 0.000 claims 2
- 229910021332 silicide Inorganic materials 0.000 claims 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021051536A JP7543960B2 (ja) | 2021-03-25 | 2021-03-25 | 半導体装置とその製造方法 |
| PCT/JP2021/039895 WO2022201617A1 (ja) | 2021-03-25 | 2021-10-28 | 半導体装置とその製造方法 |
| CN202180096092.6A CN117099213A (zh) | 2021-03-25 | 2021-10-28 | 半导体装置及其制造方法 |
| US18/451,980 US20230395710A1 (en) | 2021-03-25 | 2023-08-18 | Semiconductor device and manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021051536A JP7543960B2 (ja) | 2021-03-25 | 2021-03-25 | 半導体装置とその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022149402A JP2022149402A (ja) | 2022-10-06 |
| JP2022149402A5 true JP2022149402A5 (enExample) | 2023-02-09 |
| JP7543960B2 JP7543960B2 (ja) | 2024-09-03 |
Family
ID=83395300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021051536A Active JP7543960B2 (ja) | 2021-03-25 | 2021-03-25 | 半導体装置とその製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230395710A1 (enExample) |
| JP (1) | JP7543960B2 (enExample) |
| CN (1) | CN117099213A (enExample) |
| WO (1) | WO2022201617A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7717010B2 (ja) * | 2022-03-08 | 2025-08-01 | 株式会社デンソー | 半導体装置 |
| US12176342B2 (en) * | 2022-06-02 | 2024-12-24 | Nanya Technology Corporation | Method for fabricating semiconductor device with guard ring |
| US12154895B2 (en) * | 2022-06-02 | 2024-11-26 | Nanya Technology Corporation | Semiconductor device with guard ring |
| WO2025084070A1 (ja) * | 2023-10-16 | 2025-04-24 | ローム株式会社 | 半導体装置 |
| CN121040233A (zh) * | 2023-11-29 | 2025-11-28 | 富士电机株式会社 | 半导体装置 |
| WO2025121295A1 (ja) * | 2023-12-04 | 2025-06-12 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03180074A (ja) * | 1989-12-08 | 1991-08-06 | Fujitsu Ltd | 半導体装置 |
| JP2008085188A (ja) * | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
| JP2009141185A (ja) | 2007-12-07 | 2009-06-25 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP2011124464A (ja) | 2009-12-14 | 2011-06-23 | Toshiba Corp | 半導体装置及びその製造方法 |
| JP5531787B2 (ja) | 2010-05-31 | 2014-06-25 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| CN105051868B (zh) | 2012-10-30 | 2016-06-08 | 松下知识产权经营株式会社 | 半导体装置 |
| KR20150076814A (ko) | 2013-12-27 | 2015-07-07 | 삼성전기주식회사 | 전력 반도체 소자 |
| JP2017220644A (ja) * | 2016-06-10 | 2017-12-14 | サンケン電気株式会社 | 半導体装置 |
| US9887287B1 (en) | 2016-12-08 | 2018-02-06 | Cree, Inc. | Power semiconductor devices having gate trenches with implanted sidewalls and related methods |
| US10693002B2 (en) * | 2017-09-07 | 2020-06-23 | Fuji Electric Co., Ltd. | Semiconductor device |
| JP7139596B2 (ja) | 2017-12-06 | 2022-09-21 | 富士電機株式会社 | 半導体装置及びその製造方法 |
| JP7140148B2 (ja) | 2019-02-27 | 2022-09-21 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| US12148798B2 (en) | 2019-05-22 | 2024-11-19 | Rohm Co., Ltd. | SiC semiconductor device |
| JP7443702B2 (ja) * | 2019-09-10 | 2024-03-06 | 富士電機株式会社 | 半導体装置 |
| CN112038234B (zh) * | 2020-08-13 | 2022-11-22 | 杭州芯迈半导体技术有限公司 | SiC MOSFET器件及其制造方法 |
-
2021
- 2021-03-25 JP JP2021051536A patent/JP7543960B2/ja active Active
- 2021-10-28 CN CN202180096092.6A patent/CN117099213A/zh active Pending
- 2021-10-28 WO PCT/JP2021/039895 patent/WO2022201617A1/ja not_active Ceased
-
2023
- 2023-08-18 US US18/451,980 patent/US20230395710A1/en active Pending
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