JP7543960B2 - 半導体装置とその製造方法 - Google Patents

半導体装置とその製造方法 Download PDF

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JP7543960B2
JP7543960B2 JP2021051536A JP2021051536A JP7543960B2 JP 7543960 B2 JP7543960 B2 JP 7543960B2 JP 2021051536 A JP2021051536 A JP 2021051536A JP 2021051536 A JP2021051536 A JP 2021051536A JP 7543960 B2 JP7543960 B2 JP 7543960B2
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semiconductor layer
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semiconductor device
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JP2022149402A (ja
JP2022149402A5 (enExample
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直樹 手賀
拓真 片野
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Denso Corp
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Denso Corp
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Priority to JP2021051536A priority Critical patent/JP7543960B2/ja
Priority to PCT/JP2021/039895 priority patent/WO2022201617A1/ja
Priority to CN202180096092.6A priority patent/CN117099213A/zh
Publication of JP2022149402A publication Critical patent/JP2022149402A/ja
Publication of JP2022149402A5 publication Critical patent/JP2022149402A5/ja
Priority to US18/451,980 priority patent/US20230395710A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2021051536A 2021-03-25 2021-03-25 半導体装置とその製造方法 Active JP7543960B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021051536A JP7543960B2 (ja) 2021-03-25 2021-03-25 半導体装置とその製造方法
PCT/JP2021/039895 WO2022201617A1 (ja) 2021-03-25 2021-10-28 半導体装置とその製造方法
CN202180096092.6A CN117099213A (zh) 2021-03-25 2021-10-28 半导体装置及其制造方法
US18/451,980 US20230395710A1 (en) 2021-03-25 2023-08-18 Semiconductor device and manufacturing method of semiconductor device

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Application Number Priority Date Filing Date Title
JP2021051536A JP7543960B2 (ja) 2021-03-25 2021-03-25 半導体装置とその製造方法

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JP2022149402A JP2022149402A (ja) 2022-10-06
JP2022149402A5 JP2022149402A5 (enExample) 2023-02-09
JP7543960B2 true JP7543960B2 (ja) 2024-09-03

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US (1) US20230395710A1 (enExample)
JP (1) JP7543960B2 (enExample)
CN (1) CN117099213A (enExample)
WO (1) WO2022201617A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7717010B2 (ja) * 2022-03-08 2025-08-01 株式会社デンソー 半導体装置
US12176342B2 (en) * 2022-06-02 2024-12-24 Nanya Technology Corporation Method for fabricating semiconductor device with guard ring
US12154895B2 (en) * 2022-06-02 2024-11-26 Nanya Technology Corporation Semiconductor device with guard ring
WO2025084070A1 (ja) * 2023-10-16 2025-04-24 ローム株式会社 半導体装置
CN121040233A (zh) * 2023-11-29 2025-11-28 富士电机株式会社 半导体装置
WO2025121295A1 (ja) * 2023-12-04 2025-06-12 住友電気工業株式会社 炭化珪素半導体装置

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009141185A (ja) 2007-12-07 2009-06-25 Toshiba Corp 半導体装置及びその製造方法
JP2011124464A (ja) 2009-12-14 2011-06-23 Toshiba Corp 半導体装置及びその製造方法
JP2011253837A (ja) 2010-05-31 2011-12-15 Denso Corp 炭化珪素半導体装置およびその製造方法
WO2014068813A1 (ja) 2012-10-30 2014-05-08 パナソニック株式会社 半導体装置
US20150187877A1 (en) 2013-12-27 2015-07-02 Samsung Electro-Mechanics Co., Ltd. Power semiconductor device
JP2019102737A (ja) 2017-12-06 2019-06-24 富士電機株式会社 半導体装置及びその製造方法
JP2020512682A (ja) 2016-12-08 2020-04-23 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． イオン注入側壁を有するゲート・トレンチを備えるパワー半導体デバイス及び関連方法
JP2020141130A (ja) 2019-02-27 2020-09-03 株式会社デンソー 炭化珪素半導体装置およびその製造方法
WO2020235629A1 (ja) 2019-05-22 2020-11-26 ローム株式会社 ＳｉＣ半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03180074A (ja) * 1989-12-08 1991-08-06 Fujitsu Ltd 半導体装置
JP2008085188A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 絶縁ゲート型半導体装置
JP2017220644A (ja) * 2016-06-10 2017-12-14 サンケン電気株式会社 半導体装置
US10693002B2 (en) * 2017-09-07 2020-06-23 Fuji Electric Co., Ltd. Semiconductor device
JP7443702B2 (ja) * 2019-09-10 2024-03-06 富士電機株式会社 半導体装置
CN112038234B (zh) * 2020-08-13 2022-11-22 杭州芯迈半导体技术有限公司 SiC MOSFET器件及其制造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009141185A (ja) 2007-12-07 2009-06-25 Toshiba Corp 半導体装置及びその製造方法
JP2011124464A (ja) 2009-12-14 2011-06-23 Toshiba Corp 半導体装置及びその製造方法
JP2011253837A (ja) 2010-05-31 2011-12-15 Denso Corp 炭化珪素半導体装置およびその製造方法
WO2014068813A1 (ja) 2012-10-30 2014-05-08 パナソニック株式会社 半導体装置
US20150187877A1 (en) 2013-12-27 2015-07-02 Samsung Electro-Mechanics Co., Ltd. Power semiconductor device
JP2020512682A (ja) 2016-12-08 2020-04-23 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． イオン注入側壁を有するゲート・トレンチを備えるパワー半導体デバイス及び関連方法
JP2019102737A (ja) 2017-12-06 2019-06-24 富士電機株式会社 半導体装置及びその製造方法
JP2020141130A (ja) 2019-02-27 2020-09-03 株式会社デンソー 炭化珪素半導体装置およびその製造方法
WO2020235629A1 (ja) 2019-05-22 2020-11-26 ローム株式会社 ＳｉＣ半導体装置

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JP2022149402A (ja) 2022-10-06
CN117099213A (zh) 2023-11-21
US20230395710A1 (en) 2023-12-07
WO2022201617A1 (ja) 2022-09-29

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