JP2022070034A - 貼り合わせウェーハ用の支持基板の製造方法、および貼り合わせウェーハ用の支持基板 - Google Patents
貼り合わせウェーハ用の支持基板の製造方法、および貼り合わせウェーハ用の支持基板 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 48
- 230000001681 protective effect Effects 0.000 claims abstract description 60
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 57
- 238000005498 polishing Methods 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 59
- 238000004140 cleaning Methods 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 6
- 230000007547 defect Effects 0.000 abstract description 12
- 239000011800 void material Substances 0.000 abstract description 9
- 238000002360 preparation method Methods 0.000 abstract description 6
- 238000010030 laminating Methods 0.000 abstract 1
- 238000003475 lamination Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
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- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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- 238000007517 polishing process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
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Abstract
【解決手段】活性層用基板と支持基板とを絶縁膜を介在させて貼り合わせてなる貼り合わせウェーハ用の支持基板の製造方法であって、シリコン単結晶ウェーハからなる支持基板本体を用意する支持基板本体用意工程S21と、支持基板本体上に、酸化膜を形成する酸化膜形成工程S22と、酸化膜上に多結晶シリコン層を堆積させる多結晶シリコン層堆積工程S23と、多結晶シリコン層の表面に保護酸化膜を形成する保護酸化膜形成工程S24と、保護酸化膜を研磨除去するとともに、多結晶シリコン層研磨する研磨工程S25と、を有する貼り合わせウェーハ用の支持基板の製造方法を提供する。
【選択図】図1
Description
具体的には、僅かなスラリー残渣が多結晶シリコン層に付着した状態での研磨により、多結晶シリコン層の表面が局所的にエッチングされてピット(ピット状欠陥)が形成され、このピットが貼り合わせ後の欠陥の要因となることを見出した。本発明の支持基板の製造方法では、不純物の影響を排除するために、多結晶シリコン層を保護する保護酸化膜を形成することを特徴としている。
図1に示すように、貼り合わせウェーハの製造方法は、活性層用基板を製造する活性層用基板製造工程S1と、活性層用基板製造工程S1とは別に、支持基板を製造する支持基板製造工程S2(支持基板の製造方法)と、活性層用基板と支持基板とを貼り合わせて貼り合わせウェーハを製造する貼り合わせウェーハ製造工程S3と、を有する。
絶縁膜成長工程S12では、図2(b)に示されるように、例えば熱酸化やCVDなどによって、活性層用基板本体10の周囲に、絶縁膜11(酸化膜)を成長させる。
以上の工程により、貼り合わせウェーハ用の活性層用基板13が製造される。
保護膜としての効果と製造コストのバランスから、保護酸化膜23の厚さは、0.7nm以上、2nm以下とすることがより好ましい。
研磨工程S25では、多結晶シリコン層22の厚みが1.5μm以上、2.0μm以下となるように研磨を行う。さらに、研磨工程S25では、研磨された多結晶シリコン層22の10μm×10μmの面積領域で測定した二乗平均平方根粗さRqが0.5nm以下となるように研磨を行う。多結晶シリコン層22の厚みは、基板の面内における9点にて測定する。9点の測定点は、基板中心点、半径が基板の半径の1/2である同心円に内接する正四角形の各頂点、基板の外周端部から6mm内側の同心円に内接する正四角形の各頂点である。
以上の工程により、貼り合わせウェーハ用の支持基板24が製造される。なお、活性層用基板製造工程S1(S11~S14)と、支持基板製造工程S2(S21~S26)とは並行して進めることができる。
貼り合わせウェーハ製造工程S3は、貼り合わせ工程S31と、剥離熱処理工程S32と、結合熱処理工程S33と、を有する。
剥離熱処理工程S32では、イオン注入層12に微小気泡層を発生させる熱処理(剥離熱処理)を施し、発生した微小気泡層にて剥離させる。これにより、図2(j)に示されるように、支持基板24上に、絶縁膜11と活性層31が形成された貼り合わせウェーハ30が製造される。なお、この際、剥離面41を有する剥離ウェーハ40が形成される。
結合熱処理工程S33では、貼り合わせウェーハ30に結合熱処理を施して、貼り合わせ界面の結合強度を増加させる。
上記した貼り合わせウェーハの製造方法で使用される支持基板24は、研磨された多結晶シリコン層22の表面を10μm×10μmの面積領域で測定した二乗平均平方根粗さRqは0.5nm以下となる。また、支持基板24の多結晶シリコン層22の表面における、2nm以上のピットの個数は、1個/cm2以下となる。ピットは、KLA-Tencor社製SP-1のDICモードにて検出される。
オゾンパッシベーションを用いた保護酸化膜形成工程S24では、熱処理は行なわずに、堆積された多結晶シリコン層22に常温で高濃度オゾンを暴露することにより、多結晶シリコン層22の表面に保護酸化膜23を形成する。これにより、多結晶シリコン層22上に緻密な保護酸化膜23を形成することができる。
本発明の保護酸化膜の効果を検証するために、多結晶シリコン層を堆積後、保護酸化膜を形成することなく研磨を行った支持基板(比較例)と、保護酸化膜を形成した後、研磨を行った支持基板(実施例1、実施例2)について、研磨後のピット数を比較した。
支持基板本体に多結晶シリコン層を堆積後、保護酸化膜を形成することなく研磨を行い支持基板を製造した。
〔実施例1〕
支持基板本体に多結晶シリコン層を堆積後、SC-1洗浄にて保護酸化膜を形成した後、研磨を行い支持基板を製造した。
〔実施例2〕
支持基板本体に多結晶シリコン層を堆積後、オゾンパッシベーションにて保護酸化膜を形成した後、研磨を行い支持基板を製造した。
保護酸化膜の有無、および保護酸化膜の形成方法以外の支持基板の製造方法は同一である。
Claims (5)
- 活性層用基板と支持基板とを絶縁膜を介在させて貼り合わせてなる貼り合わせウェーハ用の支持基板の製造方法であって、
シリコン単結晶ウェーハからなる支持基板本体を用意する支持基板本体用意工程と、
前記支持基板本体上に、酸化膜を形成する酸化膜形成工程と、
前記酸化膜上に多結晶シリコン層を堆積させる多結晶シリコン層堆積工程と、
前記多結晶シリコン層の表面に保護酸化膜を形成する保護酸化膜形成工程と、
前記保護酸化膜を研磨除去するとともに、前記多結晶シリコン層を研磨する研磨工程と、を有する貼り合わせウェーハ用の支持基板の製造方法。 - 前記保護酸化膜形成工程では、SC-1洗浄により前記保護酸化膜を形成する請求項1に記載の貼り合わせウェーハ用の支持基板の製造方法。
- 前記保護酸化膜形成工程では、オゾンパッシベーションにより前記保護酸化膜を形成する請求項1に記載の貼り合わせウェーハ用の支持基板の製造方法。
- 前記保護酸化膜形成工程で形成される前記保護酸化膜の厚みは、0.5nm以上、10nm以下である請求項1から請求項3のいずれか一項に記載の貼り合わせウェーハ用の支持基板の製造方法。
- 活性層用基板と支持基板とを絶縁膜を介在させて貼り合わせてなる貼り合わせウェーハ用の支持基板であって、
支持基板本体と、
前記支持基板本体に堆積された多結晶シリコン層と、を備え、
研磨された前記多結晶シリコン層の表面を10μm×10μmの面積領域で測定した二乗平均平方根粗さRqが0.5nm以下であり、前記多結晶シリコン層の厚みが1.5μm以上、2.0μm以下であり、前記多結晶シリコン層の表面でKLA-Tencor社製SP-1のDICモードにて検出される2nm以上のピットの個数が1個/cm2以下である貼り合わせウェーハ用の支持基板。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2020179040A JP2022070034A (ja) | 2020-10-26 | 2020-10-26 | 貼り合わせウェーハ用の支持基板の製造方法、および貼り合わせウェーハ用の支持基板 |
EP21885950.2A EP4235747A1 (en) | 2020-10-26 | 2021-10-18 | Method for producing support substrate for bonded wafer, and support substrate for bonded wafer |
CN202180073159.4A CN116868308A (zh) | 2020-10-26 | 2021-10-18 | 贴合晶圆用支撑基板的制造方法及贴合晶圆用支撑基板 |
US18/032,247 US20230395423A1 (en) | 2020-10-26 | 2021-10-18 | Method for producing support substrate for bonded wafer, and support substrate for bonded wafer |
PCT/JP2021/038375 WO2022091831A1 (ja) | 2020-10-26 | 2021-10-18 | 貼り合わせウェーハ用の支持基板の製造方法、および貼り合わせウェーハ用の支持基板 |
KR1020237013212A KR20230070027A (ko) | 2020-10-26 | 2021-10-18 | 접합 웨이퍼용의 지지 기판의 제조 방법 및, 접합 웨이퍼용의 지지 기판 |
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