JP2022062108A - 圧電素子及びその製造方法 - Google Patents
圧電素子及びその製造方法 Download PDFInfo
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- JP2022062108A JP2022062108A JP2022009280A JP2022009280A JP2022062108A JP 2022062108 A JP2022062108 A JP 2022062108A JP 2022009280 A JP2022009280 A JP 2022009280A JP 2022009280 A JP2022009280 A JP 2022009280A JP 2022062108 A JP2022062108 A JP 2022062108A
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- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000012916 structural analysis Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- HSXKFDGTKKAEHL-UHFFFAOYSA-N tantalum(v) ethoxide Chemical compound [Ta+5].CC[O-].CC[O-].CC[O-].CC[O-].CC[O-] HSXKFDGTKKAEHL-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
Description
かかる態様によれば、圧電体層により初期撓み位置を上凸構造に制御して振動板の変位量を増加させ、素子全体の変位量の増加を図ることが可能となる。
かかる態様によれば、圧電体層により初期撓み位置を上凸構造に制御して振動板の変位量を増加させ、素子全体の変位量の増加を図ることが可能な圧電素子を提供することが可能となる。
(液体噴射装置)
まず、液体噴射装置の一例であるインクジェット式記録装置について、図面を参照して説明する。
図1は、インクジェット式記録装置の概略構成を示す斜視図である。図示するように、インクジェット式記録装置(記録装置)Iでは、インクジェット式記録ヘッドユニット(ヘッドユニット)IIが、カートリッジ2A,2Bに着脱可能に設けられている。カートリッジ2A,2Bは、インク供給手段を構成している。ヘッドユニットIIは、後述する複数のインクジェット式記録ヘッド(記録ヘッド)1(図2等参照)を有しており、キャリッジ3に搭載されている。キャリッジ3は、装置本体4に取り付けられたキャリッジ軸5に、軸方向に対して移動自在に設けられている。これらのヘッドユニットIIやキャリッジ3は、例えば、それぞれブラックインク組成物及びカラーインク組成物を吐出可能に構成されている。
次に、液体噴射装置に搭載される液体噴射ヘッドの一例である記録ヘッド1について、図面を参照して説明する。図2は、インクジェット式記録ヘッドの概略構成を示す分解斜視図である。図3は、インクジェット式記録ヘッドの概略構成を示す平面図である。図4は、図3のA-A′線断面図である。なお、図2から図4は、それぞれ記録ヘッド1の構成の一部を示したものであり適宜省略されている。
図5は、図4のB-B′線拡大断面図である。図示するように、圧電素子300は、複数の隔壁11によって区画された圧力発生室12が形成された基板10上に、弾性膜51と絶縁体膜52とにより構成された振動板50が形成され、その上に、密着層56、第1電極60、シード層73、圧電体層70及び第2電極80が順次積層され、これらにより振動部が形成されている。
前駆体溶液は、各金属錯体の分散を安定化する添加剤を含んでもよい。このような添加剤としては、2-エチルヘキサン酸やジエタノールアミン等が挙げられる。
(超音波デバイス)
次に、本発明の実施形態2にかかる超音波センサーを搭載した超音波デバイスの一例である超音波プローブについて、図面を参照して説明する。
図15は、超音波プローブの構成例を示す断面図である。図示するように、超音波プローブ(プローブ)Icは、CAV面型の超音波センサー1cと、超音波センサー1cに接続されたフレキシブルプリント基板(FPC基板2c)と、図示しない装置端末から引き出されたケーブル3cと、FPC基板2c及びケーブル3cを中継ぎする中継基板4cと、超音波センサー1c、FPC基板2c及び中継基板4cを保護する筐体5cと、筐体5c及び超音波センサー1cの間に充填された耐水性樹脂6cとを具備して構成されている。また、詳細は後述するが、超音波センサー1cは、超音波素子10cの駆動によって発生する超音波を伝播させる音響整合層30c、超音波を屈折させる屈折部材であるレンズ部材31c及び包囲板40cを含んで構成されている。なお、プローブIcは、上記の構成に限定されず、必要に応じて他の要素を含んで構成されてもよい。
図16は、超音波センサーの分解斜視図である。図15及び図16に示すように、超音波センサー1cは、超音波素子10c、音響整合層30c、レンズ部材31c及び包囲板40cを含んで構成されている。図16において、包囲板40cと支持部材41cとは別体に示されているが、実際には、図15に示すように、両者は一体的に構成されている。なお、超音波センサー1cは、上記の構成に限定されず、他の要素を含んで構成されてもよい。
(実施例1)
まず、6インチの(100)面のSi単結晶基板(基板11c)を熱酸化することで、当該Si単結晶基板の表面にSiO2膜(弾性膜12c)を形成した。SiO2膜上にジルコニウム膜をスパッタリング法によって成膜し、ジルコニウム膜を熱酸化することで、ZnO2膜(絶縁体膜13c)を形成した。次いで、ZnO2膜上に、RFマグネトロンスパッター法により、Ti層を形成し、当該Ti層を熱酸化することで、TiOX層(密着層)を形成した。次いで、TiOX層上に、RFマグネトロンスパッター法により、Pt電極膜を形成した。次いで、Pt電極膜上に所定のフォトレジストパターンを作製し、イオンミリングによりPt電極膜及びTiOX層を所定形状にパターニングすることで、Pt電極パターン(第1電極14cパターン)を形成した。
チタニウムテトラ-i-プロポキシド、ニオブペンタ-n-ブトキシド、酢酸マグネシウム及び酢酸鉛を、一般式(xPb1+α(Mg0.33,Nb0.67)O3-(1-x)Pb1+αTiO3)で表される組成に従い、当該一般式中のx及びαを下記表1に示すPMNのモル比の割合(組成)となるようにそれぞれ調製したこと以外は実施例1と同様にして撓み振動型圧電素子(圧電素子17c)を得た。
まず、実施例1と同様にして、Si単結晶基板上にSiO2膜、ZnO2膜、TiOX層及びPt電極膜を順次形成した。次いで、Pt電極膜上に、スパッタリング法によりIr電極膜を形成し、更に、Ir電極膜上に、RFマグネトロンスパッター法により、Ti層を形成し、当該Ti層を熱酸化することで、TiOX層を形成した。次いで、TiOX層上に、所定のフォトレジストパターンを作製し、イオンミリングによりTiOX層、Ir電極膜、Pt電極膜及びTiOX層を所定形状にパターニングすることで、Ir/Pt電極パターン(第1電極14cパターン)を形成した。
実施例1から実施例4及び比較例1から比較例5の撓み振動型圧電素子の配向性及び結晶構造を調べた。具体的には、ブルカー・エイエックスエス(Bruker AXS)社製「D8 Discover」を用い、線源はCuKα、検出器は2次元検出器(GADDS)を使用して、2次元マッピング画像及び回折パターンを測定した。なお、結晶構造については、圧電体層の(200)面に由来するピークの分裂の有無と一般的なバルクの相図から判断し、その結果を表1に示した。
実施例1から実施例4の撓み振動型圧電素子の加工形状について、光学顕微鏡及び走査型電子顕微鏡(SEM:Scanning Electron Microscope)を用い測定した。その結果、全ての撓み振動型圧電素子において所定の形状となっており、特性に影響を及ぼす特異な異常は観測されなかった。従って、以後の測定結果について、素子構造要因を考慮する必要がないことが明らかとなった。
実施例1から実施例4及び比較例1から比較例5の撓み振動型圧電素子のCAV構造における電圧無印加状態での撓み(初期撓み量d)を、Veeco社製「光干渉型表面形状粗さ測定システム NT9300DMEMS」を用いて測定した。図17及び図18は、撓み変位型圧電素子の初期撓み量を模式的に示す図である。撓み振動型圧電素子に撓みがない場合をゼロとし、図17に示した通り、撓み振動型圧電素子がCAV面に対して反対側に撓んだ場合(上凸の場合)の初期撓み量dをプラスとし、図18に示した通り、撓み振動型圧電素子がCAV面側に撓んだ場合(下凸の場合)の初期撓み量dをマイナスとした。そして、測定した初期撓み量dを表1に示した。
実施例1及び比較例5の撓み振動型圧電素子について、Polytec社製「NLV-2500」を用い、振幅20V、オフセット電圧10V、周波数1kHzのサイン(Sin)波を印加した時の変位量を、室温(25℃)にて測定した。その結果、一般的な圧電素子に使用される(100)面に配向したMPB(Morphotropic Phase Boundary)組成のPZTである比較例5における変位量が139nmであった。これに対し、同一構造で測定した実施例1における変位量は154nmであった。実施例1と比較例5の変位量を比較すると、実施例1において、10%の変位量向上が確認された。
実施例1の撓み振動型圧電素子について、有限要素法(特開2013-163361号公報参照)を用いて初期撓み量d′[nm]を算出し、この初期撓み量d′に対する正圧電効果における変形効率[%]及び逆圧電効果における変形効率[%]を、それぞれ比較した。図19は、実施例1の正圧電効果における変形効率を示す図であり、図20は、実施例1の逆圧電効果における変形効率を示す図である。なお、図19に示した結果は、実施例1の撓み振動型圧電素子のセンサー特性に相関し、図20に示した結果は、当該撓み振動型圧電素子のアクチュエーター特性に相関する。
上記実施形態では、本発明の圧電素子を適用した圧電素子応用デバイスの一例として、液体噴射装置に搭載される液体噴射ヘッドを挙げて説明したが、本発明の適用範囲はこれに限定されるものではない。また、液体噴射ヘッドの一例としてインクジェット式記録ヘッドを挙げて説明したが、本発明は、インク以外の液体を噴射する液体噴射ヘッドにも勿論適用することができる。インク以外の液体を噴射する液体噴射ヘッドとしては、例えば、液晶ディスプレイ等のカラーフィルターの製造に用いられる色材噴射ヘッド、有機ELディスプレイ、FED(電界放出ディスプレイ)等の電極形成に用いられる電極材料噴射ヘッド、バイオチップの製造に用いられる生体有機物噴射ヘッド等が挙げられる。
Claims (3)
- 振動板と、第1電極と、圧電体層と、第2電極とを含む振動部を有する圧電素子であって、
前記圧電体層を構成する圧電体の結晶の面方位が(100)であり、且つ前記圧電体の結晶構造が正方晶であり、
前記振動板と前記第1電極との合計厚みT1と、前記圧電体層と前記第2電極との合計厚みT2とが、T1≧T2の関係を有することを特徴とする圧電素子。 - 前記圧電体の結晶構造の50%以上が正方晶であることを特徴とする請求項1に記載の圧電素子。
- 振動板と、第1電極と、圧電体層と、第2電極とを含む振動部を有する圧電素子の製造方法であって、
前記圧電体層を構成する圧電体の結晶の面方位が(100)であり、且つ前記圧電体の結晶構造が正方晶となるように、前記圧電体層を液相法により形成し、
前記振動板と前記第1電極との合計厚みT1と、前記圧電体層と前記第2電極との合計厚みT2とが、T1≧T2の関係を有するように前記振動部を形成することを特徴とする圧電素子の製造方法。
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