JP6922326B2 - 圧電素子及び圧電素子応用デバイス - Google Patents
圧電素子及び圧電素子応用デバイス Download PDFInfo
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- JP6922326B2 JP6922326B2 JP2017063761A JP2017063761A JP6922326B2 JP 6922326 B2 JP6922326 B2 JP 6922326B2 JP 2017063761 A JP2017063761 A JP 2017063761A JP 2017063761 A JP2017063761 A JP 2017063761A JP 6922326 B2 JP6922326 B2 JP 6922326B2
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- piezoelectric
- electrode
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- piezoelectric element
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
- B41J2/14233—Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14201—Structure of print heads with piezoelectric elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1607—Production of print heads with piezoelectric elements
- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
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Description
かかる態様では、(100)面に結晶配向させたKNNからなる圧電体層を有する圧電素子を得ることができる。
これによれば、更に(100)面に結晶配向させたKNNからなる圧電体層を有する圧電素子を得ることができる。
これによれば、更に(100)面に結晶配向させたKNNからなる圧電体層を有する圧電素子を得ることができる。
これによれば、更に(100)面に結晶配向させたKNNからなる圧電体層を有する圧電素子を得ることができる。
これによれば、更に(100)面に結晶配向させたKNNからなる圧電体層を有する圧電素子を得ることができる。
これによれば、更に(100)面に結晶配向させたKNNからなる圧電体層を有する圧電素子を得ることができる。
これによれば、リーク電流を抑制しやすくなり、非鉛系材料として信頼性の高い圧電素子を実現することができる。
これによれば、絶縁体膜である酸化ジルコニウムがストッパー機能を果たし、カリウムやナトリウムといったアルカリ金属の基板への到達を抑制することができる。
かかる態様では、圧電・誘電特性が安定し、外部応力に対する強靭性(機械特性)を実現した圧電素子応用デバイスを提供できる。
(液体噴射装置)
まず、液体噴射装置の一例であるインクジェット式記録装置について、図面を参照して説明する。
図1は、インクジェット式記録装置の概略構成を示す斜視図である。図示するように、インクジェット式記録装置(記録装置)Iでは、インクジェット式記録ヘッドユニット(ヘッドユニット)IIが、カートリッジ2A,2Bに着脱可能に設けられている。カートリッジ2A,2Bは、インク供給手段を構成している。ヘッドユニットIIは、後述する複数のインクジェット式記録ヘッド(記録ヘッド)1(図2等参照)を有しており、キャリッジ3に搭載されている。キャリッジ3は、装置本体4に取り付けられたキャリッジ軸5に、軸方向に対して移動自在に設けられている。これらのヘッドユニットIIやキャリッジ3は、例えば、それぞれブラックインク組成物及びカラーインク組成物を吐出可能に構成されている。
次に、液体噴射装置に搭載される液体噴射ヘッドの一例である記録ヘッド1について、図面を参照して説明する。図2は、インクジェット式記録ヘッドの概略構成を示す分解斜視図である。図3は、インクジェット式記録ヘッドの概略構成を示す平面図である。図4は、図3のA−A′線断面図である。なお、図2から図4は、それぞれ記録ヘッド1の構成の一部を示したものであり適宜省略されている。
次に、記録ヘッド1の圧電アクチュエーター装置として用いられる圧電素子300の構成について、図面を参照して説明する。
図5は、図4のB−B′線拡大断面図である。図示するように、圧電素子300は、複数の隔壁11によって区画された圧力発生室12が形成された基板10上に、弾性膜51と絶縁体膜52とにより構成された振動板50が形成され、その上に、密着層56、第1電極60、圧電体層70及び第2電極80が順次積層され、これらにより可動部が形成されている。
(0.1≦X≦0.9)
(0.1≦x≦0.9、好ましくは0.3≦x≦0.7、より好ましくは0.35≦x≦0.55)
次に、圧電素子300の製造方法の一例について、記録ヘッド1の製造方法とあわせて、図面を参照して説明する。図6から図12は、インクジェット式記録ヘッドの製造例を説明する断面図である。
前駆体溶液は、各金属錯体の分散を安定化する添加剤を含んでもよい。このような添加剤としては、2−エチルヘキサン酸やジエタノールアミン等が挙げられる。
次に、図10に示すように、図示しない流路形成基板用ウェハーの圧電素子300側に、シリコンウェハーであり複数の保護基板30となる図示しない保護基板用ウェハーを、接着剤35(図4参照)を介して接合した後、流路形成基板用ウェハーを所定の厚みに薄くする。
(実施例1)
まず、6インチの(100)面のSi単結晶基板(基板10)を熱酸化することで、当該Si単結晶基板の表面にSiO2膜(弾性膜51)を形成した。弾性膜51上にZr膜をスパッタリング法によって成膜し、Zr膜を熱酸化することで、ZrO2膜(絶縁体膜52)を形成し、弾性膜51及び絶縁体膜52からなる振動板50を形成した。次いで、絶縁体膜52上に、スパッタリング法により、Ti層を形成し、当該Ti層を熱酸化することで、TiOX層(密着層56)を形成した。次いで、密着層56上に、スパッタリング法により、450℃に加熱しながらPt電極膜を形成した。次いで、Pt電極膜上に所定のフォトレジストパターンを作製し、イオンミリングによりPt電極膜及びTiOX層を所定形状にパターニングし、Pt電極(第1電極60)を形成した。
焼成工程において、RTA装置による加熱処理を650℃で行ったこと以外は実施例1と同様にして、圧電体層70を形成した。
前駆体溶液の調整に際し、組成が(K0.424Na0.636)(Nb0.995Mn0.005)O3となるようにし、圧電体膜74を8層形成し、その合計厚さを570nmにしたこと以外は実施例1と同様にして、圧電体層70を形成した。
焼成工程において、RTA装置による加熱処理を600℃で行い、圧電体膜74を7層形成し、その合計厚さを500nmにしたこと以外は実施例3と同様にして、圧電体層70を形成した。
焼成工程において、RTA装置による加熱処理の昇温時間を30秒にしたこと以外は実施例1と同様にして、圧電体層70を形成した。
焼成工程において、RTA装置による加熱処理を600℃で行ったこと以外は比較例1と同様にして、圧電体層70を形成した。
各実施例及び比較例について、アルバック・ファイ株式会社製の「ADEPT−1010」を使用し、圧電体層70の厚さ方向に亘って二次イオン質量分析(SIMS:Secondary Ion Mass Spectrometry)を行い、圧電体層70におけるNa及びKの分布状態を評価した。図13から図18は、各実施例及び比較例のNaのSIMS測定結果をそれぞれ示す図であり、図19から図24は、各実施例及び比較例のKのSIMS測定結果をそれぞれ示す図である。なお、各図において、横軸はスパッタにおける時間(秒)を示しており、当該時間の経過は、圧電体層70の厚さ方向の深さに対応する。即ち、各図では、横軸が紙面に対して右側に進むにつれて、圧電体層70から第1電極60に向かって深い地点でのNa又はKの状態が評価されていることになる。
実施例1及び比較例1について、ブルカー・エイエックスエス株式会社製の「D8 Discover」を使用し、X線回折(XRD:X−ray diffraction)法により、圧電体層70のX線回折パターンの測定を室温で行った。この測定に際し、線源はCuKα、検出器は2次元検出器(GADDS)を使用した。図25は実施例1のX線回折パターンを示す図であり、図26は比較例1のX線回折パターンを示す図である。
上記実施形態では、圧電素子応用デバイスの一例として、液体噴射装置に搭載される液体噴射ヘッドを挙げて説明したが、本発明の適用範囲はこれに限定されるものではない。また、液体噴射ヘッドの一例としてインクジェット式記録ヘッドを挙げて説明したが、本発明は、インク以外の液体を噴射する液体噴射ヘッドにも勿論適用することができる。インク以外の液体を噴射する液体噴射ヘッドとしては、例えば、液晶ディスプレイ等のカラーフィルターの製造に用いられる色材噴射ヘッド、有機ELディスプレイの発光層及び電荷輸送層の形成に用いられる有機EL材料噴射ヘッド、電極前駆動体溶液の描画により電極パターンを形成する電極材料噴射ヘッド、材料の噴射と光や熱による材料の硬化を繰り返すことで3次元の任意造形(3Dプリント)を行う硬化材料噴射ヘッド、圧電材料前駆体溶液の描画と熱処理により任意の圧電素子パターンを形成する圧電材料噴射ヘッド、バイオチップの製造に用いられる生体有機物噴射ヘッド等が挙げられる。
Claims (8)
- 基板と、
前記基板上に形成された第1電極と、
前記第1電極上に形成され、カリウム、ナトリウム、及びニオブを含む複数の圧電体膜が積層されてなる積層体である圧電体層と、
前記圧電体層上に形成された第2電極と、を有する圧電素子であって、
前記圧電体層中のナトリウム濃度は、前記複数の圧電体膜のうち第1の圧電体膜の前記第1電極の近傍に前記ナトリウム濃度の極大値であるNa極大値を有し、前記Na極大値から前記第2電極に近づくほど前記ナトリウム濃度が減少する方向に傾斜し、前記第1の圧電体膜とその直上に形成された第2の圧電体膜との境界の近傍において前記ナトリウム濃度の極小値であるNa極小値を有し、
前記圧電体層中のカリウム濃度は、前記第1の圧電体膜と前記第2の圧電体膜との境界から前記第1電極に近づくほど前記カリウム濃度が減少する方向に傾斜していることを特徴とする圧電素子。 - 前記Na極小値に対する前記Na極大値の強度比(Na極大値/Na極小値)が1.05以上となることを特徴とする請求項1に記載の圧電素子。
- 前記Na極小値に対する前記Na極大値の強度比(Na極大値/Na極小値)が1.6以下であることを特徴とする請求項2に記載の圧電素子。
- 前記圧電体層中のカリウム濃度は、前記第1の圧電体膜と前記第2の圧電体膜との境界
の近傍にカリウム濃度の極大値であるK極大値を有し、
前記第1の圧電体膜と前記第1電極との境界の近傍における前記カリウム濃度の変曲点をK変曲値としたとき、前記K変曲値に対する前記K極大値の強度比(K極大値/K変曲値)が1.15以上となることを特徴とする請求項1から請求項3の何れか一項に記載の圧電素子。 - 前記K変曲値に対する前記K極大値の強度比(K極大値/K変曲値)が2.0以下であることを特徴とする請求項4に記載の圧電素子。
- 前記圧電体層は、0.2モル%以上2.0モル%以下のマンガンを含むことを特徴とする請求項1から請求項5の何れか一項に記載の圧電素子。
- 前記基板は、酸化ジルコニウムを含むことを特徴とする請求項1から請求項6の何れか一項に記載の圧電素子。
- 請求項1から請求項7の何れか一項に記載の圧電素子を具備することを特徴とする圧電素子応用デバイス。
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