JP2021510934A5 - - Google Patents
Info
- Publication number
- JP2021510934A5 JP2021510934A5 JP2020538727A JP2020538727A JP2021510934A5 JP 2021510934 A5 JP2021510934 A5 JP 2021510934A5 JP 2020538727 A JP2020538727 A JP 2020538727A JP 2020538727 A JP2020538727 A JP 2020538727A JP 2021510934 A5 JP2021510934 A5 JP 2021510934A5
- Authority
- JP
- Japan
- Prior art keywords
- deposition rate
- tungsten carbide
- approximately
- range
- sec
- Prior art date
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023081405A JP7471492B2 (ja) | 2018-01-15 | 2023-05-17 | 炭化タングステン膜の接着性及び欠陥を改善する技法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862617376P | 2018-01-15 | 2018-01-15 | |
| US62/617,376 | 2018-01-15 | ||
| PCT/US2019/012143 WO2019139809A1 (en) | 2018-01-15 | 2019-01-03 | Techniques to improve adhesion and defects for tungsten carbide film |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023081405A Division JP7471492B2 (ja) | 2018-01-15 | 2023-05-17 | 炭化タングステン膜の接着性及び欠陥を改善する技法 |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2021510934A JP2021510934A (ja) | 2021-04-30 |
| JPWO2019139809A5 JPWO2019139809A5 (https=) | 2022-01-13 |
| JP2021510934A5 true JP2021510934A5 (https=) | 2022-01-13 |
| JP7282785B2 JP7282785B2 (ja) | 2023-05-29 |
Family
ID=67218699
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020538727A Active JP7282785B2 (ja) | 2018-01-15 | 2019-01-03 | 炭化タングステン膜の接着性及び欠陥を改善する技法 |
| JP2023081405A Active JP7471492B2 (ja) | 2018-01-15 | 2023-05-17 | 炭化タングステン膜の接着性及び欠陥を改善する技法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023081405A Active JP7471492B2 (ja) | 2018-01-15 | 2023-05-17 | 炭化タングステン膜の接着性及び欠陥を改善する技法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11859275B2 (https=) |
| JP (2) | JP7282785B2 (https=) |
| KR (1) | KR102628317B1 (https=) |
| CN (1) | CN111602224B (https=) |
| SG (1) | SG11202006408SA (https=) |
| TW (1) | TWI713961B (https=) |
| WO (1) | WO2019139809A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021096914A1 (en) * | 2019-11-12 | 2021-05-20 | Applied Materials, Inc. | Reduced hydrogen deposition processes |
| KR20250056202A (ko) * | 2022-08-22 | 2025-04-25 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 기판 처리 시스템 |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6482262B1 (en) | 1959-10-10 | 2002-11-19 | Asm Microchemistry Oy | Deposition of transition metal carbides |
| JPS6184375A (ja) * | 1984-09-29 | 1986-04-28 | Toho Kinzoku Kk | 化学蒸着法 |
| JPH0643243B2 (ja) | 1988-03-10 | 1994-06-08 | セントラル硝子株式会社 | タングステンカーバイトの製造方法 |
| JPH03291379A (ja) * | 1990-04-10 | 1991-12-20 | Citizen Watch Co Ltd | カーボン硬質膜の積層構造 |
| JPH104067A (ja) * | 1996-06-14 | 1998-01-06 | Sony Corp | 半導体装置の製造方法 |
| US5821169A (en) | 1996-08-05 | 1998-10-13 | Sharp Microelectronics Technology,Inc. | Hard mask method for transferring a multi-level photoresist pattern |
| US6162715A (en) | 1997-06-30 | 2000-12-19 | Applied Materials, Inc. | Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride |
| US6198616B1 (en) | 1998-04-03 | 2001-03-06 | Applied Materials, Inc. | Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system |
| US7198820B2 (en) * | 2003-02-06 | 2007-04-03 | Planar Systems, Inc. | Deposition of carbon- and transition metal-containing thin films |
| US8501594B2 (en) | 2003-10-10 | 2013-08-06 | Applied Materials, Inc. | Methods for forming silicon germanium layers |
| KR100607323B1 (ko) | 2004-07-12 | 2006-08-01 | 주식회사 하이닉스반도체 | 반도체 소자의 금속배선 형성방법 |
| KR100568257B1 (ko) | 2004-07-29 | 2006-04-07 | 삼성전자주식회사 | 듀얼 다마신 배선의 제조방법 |
| KR100669107B1 (ko) | 2005-07-11 | 2007-01-16 | 삼성전자주식회사 | 마스크 구조물, 이의 제조 방법, 이를 이용한 패턴 형성방법 및 반도체 장치의 콘택 형성 방법 |
| US8110493B1 (en) | 2005-12-23 | 2012-02-07 | Novellus Systems, Inc. | Pulsed PECVD method for modulating hydrogen content in hard mask |
| US7728503B2 (en) | 2006-03-29 | 2010-06-01 | Ricoh Company, Ltd. | Electron emission element, charging device, process cartridge, and image forming apparatus |
| US7645484B2 (en) * | 2006-03-31 | 2010-01-12 | Tokyo Electron Limited | Method of forming a metal carbide or metal carbonitride film having improved adhesion |
| DE102007058356A1 (de) * | 2007-06-20 | 2008-12-24 | Systec System- Und Anlagentechnik Gmbh & Co.Kg | PVD-Verfahren und PVD-Vorrichtung zur Erzeugung von reibungsarmen, verschleißbeständigen Funktionsschichten und damit hergestellte Beschichtungen |
| US7659197B1 (en) | 2007-09-21 | 2010-02-09 | Novellus Systems, Inc. | Selective resputtering of metal seed layers |
| US9159571B2 (en) | 2009-04-16 | 2015-10-13 | Lam Research Corporation | Tungsten deposition process using germanium-containing reducing agent |
| KR101566925B1 (ko) | 2010-01-29 | 2015-11-16 | 삼성전자주식회사 | 반도체소자의 제조방법 |
| US8647989B2 (en) | 2011-04-15 | 2014-02-11 | United Microelectronics Corp. | Method of forming opening on semiconductor substrate |
| US20140113453A1 (en) * | 2012-10-24 | 2014-04-24 | Lam Research Corporation | Tungsten carbide coated metal component of a plasma reactor chamber and method of coating |
| KR102170144B1 (ko) | 2013-08-23 | 2020-10-27 | 삼성전자주식회사 | 휨 제어 막을 이용한 반도체 소자 형성 방법 및 관련된 소자 |
| JP5852151B2 (ja) | 2014-02-12 | 2016-02-03 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| US9976211B2 (en) * | 2014-04-25 | 2018-05-22 | Applied Materials, Inc. | Plasma erosion resistant thin film coating for high temperature application |
| CN105097704B (zh) | 2014-05-04 | 2018-02-16 | 中芯国际集成电路制造(上海)有限公司 | 闪存器件及其形成方法 |
| US9624577B2 (en) | 2014-07-22 | 2017-04-18 | Applied Materials, Inc. | Deposition of metal doped amorphous carbon film |
| US9938616B2 (en) | 2014-07-29 | 2018-04-10 | Lam Research Corporation | Physical vapor deposition of low-stress nitrogen-doped tungsten films |
| CN106575634A (zh) | 2014-08-15 | 2017-04-19 | 应用材料公司 | 在等离子体增强化学气相沉积系统中于高温下使用压缩应力或拉伸应力处理晶片的方法和装置 |
| US9520295B2 (en) * | 2015-02-03 | 2016-12-13 | Lam Research Corporation | Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems |
| US9875890B2 (en) | 2015-03-24 | 2018-01-23 | Lam Research Corporation | Deposition of metal dielectric film for hardmasks |
| US9754824B2 (en) | 2015-05-27 | 2017-09-05 | Lam Research Corporation | Tungsten films having low fluorine content |
| US10541250B2 (en) | 2015-12-29 | 2020-01-21 | Toshiba Memory Corporation | Method for manufacturing semiconductor device |
| TWI720106B (zh) * | 2016-01-16 | 2021-03-01 | 美商應用材料股份有限公司 | Pecvd含鎢硬遮罩膜及製造方法 |
| US10318378B2 (en) | 2016-02-25 | 2019-06-11 | Micron Technology, Inc | Redundant array of independent NAND for a three-dimensional memory array |
| TWI680496B (zh) | 2016-09-13 | 2019-12-21 | 美商應用材料股份有限公司 | 高壓縮/拉伸的翹曲晶圓上的厚鎢硬遮罩膜沉積 |
-
2018
- 2018-12-24 TW TW107146738A patent/TWI713961B/zh active
-
2019
- 2019-01-03 WO PCT/US2019/012143 patent/WO2019139809A1/en not_active Ceased
- 2019-01-03 JP JP2020538727A patent/JP7282785B2/ja active Active
- 2019-01-03 US US16/960,277 patent/US11859275B2/en active Active
- 2019-01-03 KR KR1020207023475A patent/KR102628317B1/ko active Active
- 2019-01-03 CN CN201980008285.4A patent/CN111602224B/zh active Active
- 2019-01-03 SG SG11202006408SA patent/SG11202006408SA/en unknown
-
2023
- 2023-05-17 JP JP2023081405A patent/JP7471492B2/ja active Active
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