JP2021510934A5 - - Google Patents

Info

Publication number
JP2021510934A5
JP2021510934A5 JP2020538727A JP2020538727A JP2021510934A5 JP 2021510934 A5 JP2021510934 A5 JP 2021510934A5 JP 2020538727 A JP2020538727 A JP 2020538727A JP 2020538727 A JP2020538727 A JP 2020538727A JP 2021510934 A5 JP2021510934 A5 JP 2021510934A5
Authority
JP
Japan
Prior art keywords
deposition rate
tungsten carbide
approximately
range
sec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2020538727A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021510934A (ja
JP7282785B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2019/012143 external-priority patent/WO2019139809A1/en
Publication of JP2021510934A publication Critical patent/JP2021510934A/ja
Publication of JP2021510934A5 publication Critical patent/JP2021510934A5/ja
Priority to JP2023081405A priority Critical patent/JP7471492B2/ja
Application granted granted Critical
Publication of JP7282785B2 publication Critical patent/JP7282785B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2020538727A 2018-01-15 2019-01-03 炭化タングステン膜の接着性及び欠陥を改善する技法 Active JP7282785B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023081405A JP7471492B2 (ja) 2018-01-15 2023-05-17 炭化タングステン膜の接着性及び欠陥を改善する技法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862617376P 2018-01-15 2018-01-15
US62/617,376 2018-01-15
PCT/US2019/012143 WO2019139809A1 (en) 2018-01-15 2019-01-03 Techniques to improve adhesion and defects for tungsten carbide film

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023081405A Division JP7471492B2 (ja) 2018-01-15 2023-05-17 炭化タングステン膜の接着性及び欠陥を改善する技法

Publications (3)

Publication Number Publication Date
JP2021510934A JP2021510934A (ja) 2021-04-30
JP2021510934A5 true JP2021510934A5 (https=) 2022-01-13
JP7282785B2 JP7282785B2 (ja) 2023-05-29

Family

ID=67218699

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2020538727A Active JP7282785B2 (ja) 2018-01-15 2019-01-03 炭化タングステン膜の接着性及び欠陥を改善する技法
JP2023081405A Active JP7471492B2 (ja) 2018-01-15 2023-05-17 炭化タングステン膜の接着性及び欠陥を改善する技法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023081405A Active JP7471492B2 (ja) 2018-01-15 2023-05-17 炭化タングステン膜の接着性及び欠陥を改善する技法

Country Status (7)

Country Link
US (1) US11859275B2 (https=)
JP (2) JP7282785B2 (https=)
KR (1) KR102628317B1 (https=)
CN (1) CN111602224B (https=)
SG (1) SG11202006408SA (https=)
TW (1) TWI713961B (https=)
WO (1) WO2019139809A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12027366B2 (en) * 2019-11-12 2024-07-02 Applied Materials, Inc. Reduced hydrogen deposition processes
KR20250056202A (ko) * 2022-08-22 2025-04-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 기판 처리 시스템

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184375A (ja) 1984-09-29 1986-04-28 Toho Kinzoku Kk 化学蒸着法
JPH0643243B2 (ja) * 1988-03-10 1994-06-08 セントラル硝子株式会社 タングステンカーバイトの製造方法
JPH03291379A (ja) 1990-04-10 1991-12-20 Citizen Watch Co Ltd カーボン硬質膜の積層構造
JPH104067A (ja) * 1996-06-14 1998-01-06 Sony Corp 半導体装置の製造方法
US5821169A (en) 1996-08-05 1998-10-13 Sharp Microelectronics Technology,Inc. Hard mask method for transferring a multi-level photoresist pattern
US6162715A (en) 1997-06-30 2000-12-19 Applied Materials, Inc. Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
US6198616B1 (en) 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
US6475276B1 (en) 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
US7198820B2 (en) * 2003-02-06 2007-04-03 Planar Systems, Inc. Deposition of carbon- and transition metal-containing thin films
US8501594B2 (en) 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
KR100607323B1 (ko) 2004-07-12 2006-08-01 주식회사 하이닉스반도체 반도체 소자의 금속배선 형성방법
KR100568257B1 (ko) 2004-07-29 2006-04-07 삼성전자주식회사 듀얼 다마신 배선의 제조방법
KR100669107B1 (ko) 2005-07-11 2007-01-16 삼성전자주식회사 마스크 구조물, 이의 제조 방법, 이를 이용한 패턴 형성방법 및 반도체 장치의 콘택 형성 방법
US8110493B1 (en) 2005-12-23 2012-02-07 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
US7728503B2 (en) 2006-03-29 2010-06-01 Ricoh Company, Ltd. Electron emission element, charging device, process cartridge, and image forming apparatus
US7645484B2 (en) 2006-03-31 2010-01-12 Tokyo Electron Limited Method of forming a metal carbide or metal carbonitride film having improved adhesion
DE102007058356A1 (de) * 2007-06-20 2008-12-24 Systec System- Und Anlagentechnik Gmbh & Co.Kg PVD-Verfahren und PVD-Vorrichtung zur Erzeugung von reibungsarmen, verschleißbeständigen Funktionsschichten und damit hergestellte Beschichtungen
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
KR101566925B1 (ko) 2010-01-29 2015-11-16 삼성전자주식회사 반도체소자의 제조방법
US8647989B2 (en) 2011-04-15 2014-02-11 United Microelectronics Corp. Method of forming opening on semiconductor substrate
US20140113453A1 (en) * 2012-10-24 2014-04-24 Lam Research Corporation Tungsten carbide coated metal component of a plasma reactor chamber and method of coating
KR102170144B1 (ko) 2013-08-23 2020-10-27 삼성전자주식회사 휨 제어 막을 이용한 반도체 소자 형성 방법 및 관련된 소자
JP5852151B2 (ja) 2014-02-12 2016-02-03 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
US9976211B2 (en) * 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
CN105097704B (zh) 2014-05-04 2018-02-16 中芯国际集成电路制造(上海)有限公司 闪存器件及其形成方法
US9624577B2 (en) 2014-07-22 2017-04-18 Applied Materials, Inc. Deposition of metal doped amorphous carbon film
US9938616B2 (en) 2014-07-29 2018-04-10 Lam Research Corporation Physical vapor deposition of low-stress nitrogen-doped tungsten films
US10403535B2 (en) 2014-08-15 2019-09-03 Applied Materials, Inc. Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system
US9520295B2 (en) 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
US9875890B2 (en) 2015-03-24 2018-01-23 Lam Research Corporation Deposition of metal dielectric film for hardmasks
US9754824B2 (en) * 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US10541250B2 (en) 2015-12-29 2020-01-21 Toshiba Memory Corporation Method for manufacturing semiconductor device
TWI720106B (zh) * 2016-01-16 2021-03-01 美商應用材料股份有限公司 Pecvd含鎢硬遮罩膜及製造方法
US10318378B2 (en) 2016-02-25 2019-06-11 Micron Technology, Inc Redundant array of independent NAND for a three-dimensional memory array
TWI680496B (zh) 2016-09-13 2019-12-21 美商應用材料股份有限公司 高壓縮/拉伸的翹曲晶圓上的厚鎢硬遮罩膜沉積

Similar Documents

Publication Publication Date Title
TWI862621B (zh) 包括光阻底層之結構及其形成方法
CN102265383B (zh) 用于沉积具有降低电阻率及改良表面形态的钨膜的方法
TWI788311B (zh) 拓撲受限電漿增強循環沉積方法
JP3998830B2 (ja) 化学気相蒸着法による金属窒化膜形成方法及びこれを用いた半導体装置の金属コンタクト形成方法
CN111357082B (zh) 针对pecvd金属掺杂的碳硬掩模的均质界面的沉积系统和方法
US9240320B1 (en) Methods of depositing smooth and conformal ashable hard mask films
TWI695903B (zh) 經由原子層沉積(ald)循環之選擇性沉積金屬矽化物的方法
JP2022505310A5 (https=)
TW200531211A (en) Method of depositing an amorphous carbon film for metal etch hardmask application
JP2011508433A5 (https=)
TW201729283A (zh) 氧化矽的自對準遮蔽
TW201214562A (en) Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
JP2008538129A5 (https=)
JP2022516312A5 (https=)
TW201829825A (zh) 使用熱絲化學氣相沉積來沉積可流動含矽膜的方法
JP2000208509A (ja) 半導体装置の製造方法
JP2024105274A (ja) デバイス製造における金属ハードマスクの形成のシステムおよび方法
JP2021510934A5 (https=)
TWI727660B (zh) 氮化矽之選擇性沉積
JP2001308032A (ja) １０００Åを超える厚さの低残留ハロゲン含有ＴｉＮ膜を堆積する方法及び装置
JP6946463B2 (ja) ワードライン抵抗を低下させる方法
KR102125511B1 (ko) 비정질 실리콘막의 형성 방법
JP7154232B2 (ja) 堆積－処理－エッチングプロセスを用いたシリコンの選択的堆積
JP2007531997A5 (https=)
TW202307575A (zh) 光阻底層上形成黏附層之方法及含有黏附層之結構