KR102628317B1 - 텅스텐 탄화물 막에 대한 접착 및 결함들을 개선하기 위한 기법들 - Google Patents

텅스텐 탄화물 막에 대한 접착 및 결함들을 개선하기 위한 기법들 Download PDF

Info

Publication number
KR102628317B1
KR102628317B1 KR1020207023475A KR20207023475A KR102628317B1 KR 102628317 B1 KR102628317 B1 KR 102628317B1 KR 1020207023475 A KR1020207023475 A KR 1020207023475A KR 20207023475 A KR20207023475 A KR 20207023475A KR 102628317 B1 KR102628317 B1 KR 102628317B1
Authority
KR
South Korea
Prior art keywords
tungsten carbide
deposition rate
carbide film
sec
initiation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020207023475A
Other languages
English (en)
Korean (ko)
Other versions
KR20200100859A (ko
Inventor
비벡 바랫 샤
아눕 쿠마르 싱
바스카 쿠마르
가네쉬 바라수브라마니안
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20200100859A publication Critical patent/KR20200100859A/ko
Application granted granted Critical
Publication of KR102628317B1 publication Critical patent/KR102628317B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H01L21/02172—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H01L21/02274—
    • H01L21/0337—
    • H01L21/28556—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H01L2924/01074—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020207023475A 2018-01-15 2019-01-03 텅스텐 탄화물 막에 대한 접착 및 결함들을 개선하기 위한 기법들 Active KR102628317B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862617376P 2018-01-15 2018-01-15
US62/617,376 2018-01-15
PCT/US2019/012143 WO2019139809A1 (en) 2018-01-15 2019-01-03 Techniques to improve adhesion and defects for tungsten carbide film

Publications (2)

Publication Number Publication Date
KR20200100859A KR20200100859A (ko) 2020-08-26
KR102628317B1 true KR102628317B1 (ko) 2024-01-23

Family

ID=67218699

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020207023475A Active KR102628317B1 (ko) 2018-01-15 2019-01-03 텅스텐 탄화물 막에 대한 접착 및 결함들을 개선하기 위한 기법들

Country Status (7)

Country Link
US (1) US11859275B2 (https=)
JP (2) JP7282785B2 (https=)
KR (1) KR102628317B1 (https=)
CN (1) CN111602224B (https=)
SG (1) SG11202006408SA (https=)
TW (1) TWI713961B (https=)
WO (1) WO2019139809A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021096914A1 (en) * 2019-11-12 2021-05-20 Applied Materials, Inc. Reduced hydrogen deposition processes
KR20250056202A (ko) * 2022-08-22 2025-04-25 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 기판 처리 시스템

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980201A (en) 1988-03-10 1990-12-25 Central Glass Company, Limited Method of forming tungsten carbide by chemical vapor deposition
JP2003512527A (ja) 1999-10-15 2003-04-02 エーエスエム アメリカ インコーポレイテッド 遷移金属炭化物の堆積
JP2016181687A (ja) 2015-03-24 2016-10-13 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ハードマスクのための金属誘電体膜の蒸着
US20170207087A1 (en) * 2016-01-16 2017-07-20 Applied Materials, Inc. PECVD Tungsten Containing Hardmask Films And Methods Of Making

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6184375A (ja) * 1984-09-29 1986-04-28 Toho Kinzoku Kk 化学蒸着法
JPH03291379A (ja) * 1990-04-10 1991-12-20 Citizen Watch Co Ltd カーボン硬質膜の積層構造
JPH104067A (ja) * 1996-06-14 1998-01-06 Sony Corp 半導体装置の製造方法
US5821169A (en) 1996-08-05 1998-10-13 Sharp Microelectronics Technology,Inc. Hard mask method for transferring a multi-level photoresist pattern
US6162715A (en) 1997-06-30 2000-12-19 Applied Materials, Inc. Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride
US6198616B1 (en) 1998-04-03 2001-03-06 Applied Materials, Inc. Method and apparatus for supplying a chucking voltage to an electrostatic chuck within a semiconductor wafer processing system
US7198820B2 (en) * 2003-02-06 2007-04-03 Planar Systems, Inc. Deposition of carbon- and transition metal-containing thin films
US8501594B2 (en) 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
KR100607323B1 (ko) 2004-07-12 2006-08-01 주식회사 하이닉스반도체 반도체 소자의 금속배선 형성방법
KR100568257B1 (ko) 2004-07-29 2006-04-07 삼성전자주식회사 듀얼 다마신 배선의 제조방법
KR100669107B1 (ko) 2005-07-11 2007-01-16 삼성전자주식회사 마스크 구조물, 이의 제조 방법, 이를 이용한 패턴 형성방법 및 반도체 장치의 콘택 형성 방법
US8110493B1 (en) 2005-12-23 2012-02-07 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
US7728503B2 (en) 2006-03-29 2010-06-01 Ricoh Company, Ltd. Electron emission element, charging device, process cartridge, and image forming apparatus
US7645484B2 (en) * 2006-03-31 2010-01-12 Tokyo Electron Limited Method of forming a metal carbide or metal carbonitride film having improved adhesion
DE102007058356A1 (de) * 2007-06-20 2008-12-24 Systec System- Und Anlagentechnik Gmbh & Co.Kg PVD-Verfahren und PVD-Vorrichtung zur Erzeugung von reibungsarmen, verschleißbeständigen Funktionsschichten und damit hergestellte Beschichtungen
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
KR101566925B1 (ko) 2010-01-29 2015-11-16 삼성전자주식회사 반도체소자의 제조방법
US8647989B2 (en) 2011-04-15 2014-02-11 United Microelectronics Corp. Method of forming opening on semiconductor substrate
US20140113453A1 (en) * 2012-10-24 2014-04-24 Lam Research Corporation Tungsten carbide coated metal component of a plasma reactor chamber and method of coating
KR102170144B1 (ko) 2013-08-23 2020-10-27 삼성전자주식회사 휨 제어 막을 이용한 반도체 소자 형성 방법 및 관련된 소자
JP5852151B2 (ja) 2014-02-12 2016-02-03 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
US9976211B2 (en) * 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
CN105097704B (zh) 2014-05-04 2018-02-16 中芯国际集成电路制造(上海)有限公司 闪存器件及其形成方法
US9624577B2 (en) 2014-07-22 2017-04-18 Applied Materials, Inc. Deposition of metal doped amorphous carbon film
US9938616B2 (en) 2014-07-29 2018-04-10 Lam Research Corporation Physical vapor deposition of low-stress nitrogen-doped tungsten films
CN106575634A (zh) 2014-08-15 2017-04-19 应用材料公司 在等离子体增强化学气相沉积系统中于高温下使用压缩应力或拉伸应力处理晶片的方法和装置
US9520295B2 (en) * 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US10541250B2 (en) 2015-12-29 2020-01-21 Toshiba Memory Corporation Method for manufacturing semiconductor device
US10318378B2 (en) 2016-02-25 2019-06-11 Micron Technology, Inc Redundant array of independent NAND for a three-dimensional memory array
TWI680496B (zh) 2016-09-13 2019-12-21 美商應用材料股份有限公司 高壓縮/拉伸的翹曲晶圓上的厚鎢硬遮罩膜沉積

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980201A (en) 1988-03-10 1990-12-25 Central Glass Company, Limited Method of forming tungsten carbide by chemical vapor deposition
JP2003512527A (ja) 1999-10-15 2003-04-02 エーエスエム アメリカ インコーポレイテッド 遷移金属炭化物の堆積
JP2016181687A (ja) 2015-03-24 2016-10-13 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ハードマスクのための金属誘電体膜の蒸着
US20170207087A1 (en) * 2016-01-16 2017-07-20 Applied Materials, Inc. PECVD Tungsten Containing Hardmask Films And Methods Of Making

Also Published As

Publication number Publication date
JP2023113700A (ja) 2023-08-16
TWI713961B (zh) 2020-12-21
JP7471492B2 (ja) 2024-04-19
SG11202006408SA (en) 2020-08-28
TW201932636A (zh) 2019-08-16
CN111602224A (zh) 2020-08-28
US11859275B2 (en) 2024-01-02
KR20200100859A (ko) 2020-08-26
JP2021510934A (ja) 2021-04-30
WO2019139809A1 (en) 2019-07-18
JP7282785B2 (ja) 2023-05-29
US20210108309A1 (en) 2021-04-15
CN111602224B (zh) 2025-09-19

Similar Documents

Publication Publication Date Title
CN109643639B (zh) 用于间隔件和硬掩模应用的硼烷介导的从硅烷和烷基硅烷物质脱氢的工艺
JP7229929B2 (ja) ハードマスク応用向けのホウ素がドープされた炭化タングステン
KR102780614B1 (ko) 인 도핑된 실리콘 나이트라이드 막들을 증착하기 위한 방법들
JP7270740B2 (ja) ３ｄｎａｎｄ応用のためのメモリセルの製造
CN103210480A (zh) 超高选择性的掺杂非晶碳可剥除硬掩模的开发与集成
JP7462626B2 (ja) パターニング応用のための高密度炭素膜
JP7471492B2 (ja) 炭化タングステン膜の接着性及び欠陥を改善する技法
CN106504991B (zh) 用于制造半导体应用的水平全环栅极器件的纳米线的方法
JP7801500B2 (ja) Ｄｒａｍのキャパシタモールドパターニング用炭化ルテニウム
US11791155B2 (en) Diffusion barriers for germanium

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000