JP2021503482A5 - - Google Patents
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- JP2021503482A5 JP2021503482A5 JP2020527805A JP2020527805A JP2021503482A5 JP 2021503482 A5 JP2021503482 A5 JP 2021503482A5 JP 2020527805 A JP2020527805 A JP 2020527805A JP 2020527805 A JP2020527805 A JP 2020527805A JP 2021503482 A5 JP2021503482 A5 JP 2021503482A5
- Authority
- JP
- Japan
- Prior art keywords
- carbon atoms
- combination
- butyl
- group
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 125000000217 alkyl group Chemical group 0.000 claims 12
- 125000004432 carbon atom Chemical group C* 0.000 claims 12
- 239000000203 mixture Substances 0.000 claims 10
- 238000000034 method Methods 0.000 claims 9
- 239000011248 coating agent Substances 0.000 claims 5
- 238000000576 coating method Methods 0.000 claims 5
- 239000003960 organic solvent Substances 0.000 claims 5
- 230000005855 radiation Effects 0.000 claims 5
- 125000000753 cycloalkyl group Chemical group 0.000 claims 4
- UOCJDOLVGGIYIQ-PBFPGSCMSA-N cefatrizine Chemical group S([C@@H]1[C@@H](C(N1C=1C(O)=O)=O)NC(=O)[C@H](N)C=2C=CC(O)=CC=2)CC=1CSC=1C=NNN=1 UOCJDOLVGGIYIQ-PBFPGSCMSA-N 0.000 claims 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 3
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 3
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 claims 3
- 125000000962 organic group Chemical group 0.000 claims 3
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims 2
- 239000003446 ligand Substances 0.000 claims 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 150000002148 esters Chemical class 0.000 claims 1
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 230000002194 synthesizing effect Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2024075585A JP2024122972A (ja) | 2017-11-20 | 2024-05-08 | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762588546P | 2017-11-20 | 2017-11-20 | |
| US62/588,546 | 2017-11-20 | ||
| PCT/US2018/061769 WO2019099981A2 (en) | 2017-11-20 | 2018-11-19 | Organotin clusters, solutions of organotin clusters, and application to high resolution patterning |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024075585A Division JP2024122972A (ja) | 2017-11-20 | 2024-05-08 | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021503482A JP2021503482A (ja) | 2021-02-12 |
| JP2021503482A5 true JP2021503482A5 (enExample) | 2021-07-29 |
| JP7487103B2 JP7487103B2 (ja) | 2024-05-20 |
Family
ID=66534919
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020527805A Active JP7487103B2 (ja) | 2017-11-20 | 2018-11-19 | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
| JP2024075585A Pending JP2024122972A (ja) | 2017-11-20 | 2024-05-08 | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024075585A Pending JP2024122972A (ja) | 2017-11-20 | 2024-05-08 | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US11098070B2 (enExample) |
| JP (2) | JP7487103B2 (enExample) |
| KR (2) | KR102634520B1 (enExample) |
| TW (2) | TWI803806B (enExample) |
| WO (1) | WO2019099981A2 (enExample) |
Families Citing this family (61)
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| KR102306612B1 (ko) | 2014-01-31 | 2021-09-29 | 램 리써치 코포레이션 | 진공-통합된 하드마스크 프로세스 및 장치 |
| KR102394042B1 (ko) | 2016-03-11 | 2022-05-03 | 인프리아 코포레이션 | 사전패터닝된 리소그래피 템플레이트, 상기 템플레이트를 이용한 방사선 패터닝에 기초한 방법 및 상기 템플레이트를 형성하기 위한 방법 |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| JP7487103B2 (ja) * | 2017-11-20 | 2024-05-20 | インプリア・コーポレイション | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
| TWI814552B (zh) | 2018-04-05 | 2023-09-01 | 美商英培雅股份有限公司 | 錫十二聚物及具有強ｅｕｖ吸收的輻射可圖案化塗層 |
| CN112368645B (zh) | 2018-06-13 | 2024-07-26 | 布鲁尔科技公司 | 用于euv光刻的粘附层 |
| CN113039486B (zh) | 2018-11-14 | 2024-11-12 | 朗姆研究公司 | 可用于下一代光刻法中的硬掩模制作方法 |
| KR102731166B1 (ko) | 2018-12-20 | 2024-11-18 | 램 리써치 코포레이션 | 레지스트들의 건식 현상 (dry development) |
| KR20210129739A (ko) | 2019-03-18 | 2021-10-28 | 램 리써치 코포레이션 | 극자외선 (Extreme Ultraviolet) 리소그래피 레지스트들의 거칠기 감소 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| US11327398B2 (en) | 2019-04-30 | 2022-05-10 | Samsung Electronics Co., Ltd. | Photoresist compositions and methods for fabricating semiconductor devices using the same |
| TWI869221B (zh) | 2019-06-26 | 2025-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| US12360454B2 (en) | 2019-07-12 | 2025-07-15 | Inpria Corporation | Stabilized interfaces of inorganic radiation patterning compositions on substrates |
| WO2021016229A1 (en) * | 2019-07-22 | 2021-01-28 | Inpria Corporation | Organometallic metal chalcogenide clusters and application to lithography |
| US11579531B2 (en) | 2019-09-25 | 2023-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Organometallic cluster photoresists for EUV lithography |
| JP7189375B2 (ja) | 2020-01-15 | 2022-12-13 | ラム リサーチ コーポレーション | フォトレジスト接着および線量低減のための下層 |
| WO2021173557A1 (en) | 2020-02-28 | 2021-09-02 | Lam Research Corporation | Multi-layer hardmask for defect reduction in euv patterning |
| EP4147269A4 (en) | 2020-05-06 | 2024-06-05 | Inpria Corporation | Multiple patterning with organometallic photopatternable layers with intermediate freeze steps |
| US12416863B2 (en) | 2020-07-01 | 2025-09-16 | Applied Materials, Inc. | Dry develop process of photoresist |
| US11621172B2 (en) | 2020-07-01 | 2023-04-04 | Applied Materials, Inc. | Vapor phase thermal etch solutions for metal oxo photoresists |
| US12159787B2 (en) * | 2020-07-02 | 2024-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
| KR102781895B1 (ko) | 2020-07-07 | 2025-03-18 | 램 리써치 코포레이션 | 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스 |
| KR102671848B1 (ko) * | 2020-09-14 | 2024-05-31 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102586099B1 (ko) * | 2020-09-14 | 2023-10-05 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102586112B1 (ko) * | 2020-09-14 | 2023-10-05 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102797476B1 (ko) | 2020-11-13 | 2025-04-21 | 램 리써치 코포레이션 | 포토레지스트의 건식 제거를 위한 프로세스 툴 |
| KR102701790B1 (ko) * | 2020-12-15 | 2024-09-04 | 전남대학교산학협력단 | 무기산으로 안정화된 금속산화물 클러스터를 포함하는 포토레지스트용 조성물 |
| KR102598259B1 (ko) * | 2020-12-18 | 2023-11-02 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102690557B1 (ko) | 2020-12-18 | 2024-07-30 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물, 이의 제조 방법 및 이를 이용한 패턴 형성 방법 |
| KR20230131941A (ko) * | 2021-01-28 | 2023-09-14 | 엔테그리스, 아이엔씨. | 유기주석 화합물을 제조하는 방법 |
| US20220365428A1 (en) * | 2021-05-14 | 2022-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist materials and associated methods |
| JP2024540352A (ja) * | 2021-11-08 | 2024-10-31 | インプリア・コーポレイション | 安定性が強化された有機スズフォトレジスト組成物 |
| CN114167685B (zh) * | 2021-12-07 | 2024-10-22 | 山西师范大学 | 有机锡-无机锡杂化Sn18型晶态锡氧簇合物及其制备方法 |
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| KR102522001B1 (ko) * | 2021-12-23 | 2023-04-20 | 전남대학교산학협력단 | 클러스터 화합물 또는 이의 염 및 이를 포함하는 포토레지스트 조성물 |
| US20230259024A1 (en) * | 2022-02-11 | 2023-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist, method of manufacturing a semiconductor device and method of extreme ultraviolet lithography |
| KR102769240B1 (ko) * | 2022-07-12 | 2025-02-21 | 유한회사 디씨티머티리얼 | 반도체 euv 리소그래피 방법 |
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| JP2024092963A (ja) | 2022-12-26 | 2024-07-08 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
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| JP2024097389A (ja) * | 2023-01-06 | 2024-07-19 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
| EP4628990A1 (en) | 2023-01-23 | 2025-10-08 | Nissan Chemical Corporation | Organic resin composition for forming metal oxide resist pattern |
| US20240288767A1 (en) * | 2023-01-27 | 2024-08-29 | Taiwan Semiconductor Manufacturing Company | Methods and materials for metallic photoresist |
| KR20250160464A (ko) | 2023-02-28 | 2025-11-13 | 닛산 가가쿠 가부시키가이샤 | 탄소-탄소 이중 결합을 가지는 실리콘 함유 레지스트 하층막 형성용 조성물 |
| WO2024196643A1 (en) | 2023-03-17 | 2024-09-26 | Lam Research Corporation | Integration of dry development and etch processes for euv patterning in a single process chamber |
| CN116333727B (zh) * | 2023-03-27 | 2025-04-01 | 山西师范大学 | 8-羟基喹啉类多核锡氧团簇晶态发光材料及其制备方法 |
| KR20250020973A (ko) * | 2023-08-04 | 2025-02-11 | 삼성에스디아이 주식회사 | 패턴 형성 방법 |
| CN117023564B (zh) * | 2023-08-07 | 2025-10-28 | 清华大学 | 一种负载锡单原子和团簇的碳材料及其制备方法和应用 |
| CN117430627A (zh) * | 2023-10-26 | 2024-01-23 | 大连理工大学 | 一类双烷基和有机环状羧酸配位的锡氧金属团簇及其合成与应用 |
| TW202521552A (zh) * | 2023-11-15 | 2025-06-01 | 日商三菱化學股份有限公司 | 錫化合物、錫組合物、彼等之製造方法、阻劑溶液、圖案形成方法、薄膜、經圖案化之薄膜及基板之製造方法 |
| JP2025118531A (ja) | 2024-01-31 | 2025-08-13 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| KR20250125796A (ko) * | 2024-02-15 | 2025-08-22 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| JP2025136888A (ja) | 2024-03-08 | 2025-09-19 | 信越化学工業株式会社 | ネガ型レジストパターン形成方法 |
| JP2025136880A (ja) | 2024-03-08 | 2025-09-19 | 信越化学工業株式会社 | ネガ型レジストパターン形成方法 |
| JP2025139627A (ja) | 2024-03-13 | 2025-09-29 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| JP2025139629A (ja) | 2024-03-13 | 2025-09-29 | 信越化学工業株式会社 | レジスト組成物、積層体、及びパターン形成方法 |
| US20240272547A1 (en) * | 2024-03-28 | 2024-08-15 | Intel Corporation | Tin carboxylate precursors for metal oxide resist layers and related methods |
| JP2025158084A (ja) | 2024-04-03 | 2025-10-16 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| JP2025157764A (ja) | 2024-04-03 | 2025-10-16 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| CN121005732A (zh) * | 2024-05-24 | 2025-11-25 | 珠海基石科技有限公司 | 有机锡簇结构及其制备方法、图案化组合物、图案化方法、图案化薄膜、图案化基底和电子元器件 |
| CN118393812B (zh) * | 2024-06-24 | 2024-08-30 | 珠海基石科技有限公司 | 图案化组合物、图案化薄膜、图案化基底、半导体器件及其制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2317993C1 (ru) * | 2006-07-20 | 2008-02-27 | Государственное образовательное учреждение высшего профессионального образования "Кубанский государственный университет" (КубГУ) | Способ получения три- и тетраорганилалкинилолова |
| US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| EP4050014A3 (en) | 2014-10-23 | 2022-12-14 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| IL239852A (en) | 2015-07-08 | 2016-12-29 | Algolion Ltd | Lithium-ion battery safety monitoring |
| EP4273625A3 (en) * | 2015-10-13 | 2024-02-28 | Inpria Corporation | Organotin oxide hydroxide patterning compositions, precursors, and patterning |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| US10018920B2 (en) * | 2016-03-04 | 2018-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography patterning with a gas phase resist |
| JP7487103B2 (ja) * | 2017-11-20 | 2024-05-20 | インプリア・コーポレイション | 有機スズクラスター、有機スズクラスターの溶液、及び高解像度パターン形成への適用 |
| TWI814552B (zh) * | 2018-04-05 | 2023-09-01 | 美商英培雅股份有限公司 | 錫十二聚物及具有強ｅｕｖ吸收的輻射可圖案化塗層 |
| US10787466B2 (en) * | 2018-04-11 | 2020-09-29 | Inpria Corporation | Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods |
| CA3190105A1 (en) * | 2020-08-25 | 2022-03-03 | Inpria Corporation | Methods to produce organotin compositions with convenient ligand providing reactants |
| JP2024540352A (ja) * | 2021-11-08 | 2024-10-31 | インプリア・コーポレイション | 安定性が強化された有機スズフォトレジスト組成物 |
-
2018
- 2018-11-19 JP JP2020527805A patent/JP7487103B2/ja active Active
- 2018-11-19 WO PCT/US2018/061769 patent/WO2019099981A2/en not_active Ceased
- 2018-11-19 US US16/194,491 patent/US11098070B2/en active Active
- 2018-11-19 KR KR1020207012752A patent/KR102634520B1/ko active Active
- 2018-11-19 TW TW110101710A patent/TWI803806B/zh active
- 2018-11-19 KR KR1020247003859A patent/KR20240019399A/ko active Pending
- 2018-11-19 TW TW107141012A patent/TWI719360B/zh active
-
2021
- 2021-07-20 US US17/380,475 patent/US12129271B2/en active Active
-
2024
- 2024-05-08 JP JP2024075585A patent/JP2024122972A/ja active Pending
- 2024-09-25 US US18/895,654 patent/US20250011346A1/en active Pending
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