TWI803806B - 有機錫簇，有機錫簇之溶液，及於高解析度圖案化之應用 - Google Patents
有機錫簇，有機錫簇之溶液，及於高解析度圖案化之應用 Download PDFInfo
- Publication number
- TWI803806B TWI803806B TW110101710A TW110101710A TWI803806B TW I803806 B TWI803806 B TW I803806B TW 110101710 A TW110101710 A TW 110101710A TW 110101710 A TW110101710 A TW 110101710A TW I803806 B TWI803806 B TW I803806B
- Authority
- TW
- Taiwan
- Prior art keywords
- alkyl
- tin
- coating
- carbon atoms
- tris
- Prior art date
Links
- 238000000059 patterning Methods 0.000 title abstract description 36
- 238000000576 coating method Methods 0.000 claims abstract description 84
- 239000003446 ligand Substances 0.000 claims abstract description 74
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 42
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 33
- 125000000753 cycloalkyl group Chemical group 0.000 claims abstract description 6
- 239000011248 coating agent Substances 0.000 claims description 72
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 49
- 239000000203 mixture Substances 0.000 claims description 44
- 239000000243 solution Substances 0.000 claims description 43
- 229910052718 tin Inorganic materials 0.000 claims description 40
- 239000002904 solvent Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 29
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 18
- 239000003960 organic solvent Substances 0.000 claims description 17
- -1 alkyl alkynes Chemical class 0.000 claims description 15
- 239000007983 Tris buffer Substances 0.000 claims description 13
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 235000019253 formic acid Nutrition 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 8
- 125000003342 alkenyl group Chemical group 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 150000001735 carboxylic acids Chemical class 0.000 claims description 7
- 125000000962 organic group Chemical group 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 4
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 4
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 238000006467 substitution reaction Methods 0.000 claims description 3
- 230000002194 synthesizing effect Effects 0.000 claims description 3
- 125000006165 cyclic alkyl group Chemical group 0.000 claims description 2
- 238000003618 dip coating Methods 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 125000000524 functional group Chemical group 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 125000005265 dialkylamine group Chemical group 0.000 claims 3
- LUZSPGQEISANPO-UHFFFAOYSA-N butyltin Chemical group CCCC[Sn] LUZSPGQEISANPO-UHFFFAOYSA-N 0.000 claims 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims 1
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 52
- 125000002579 carboxylato group Chemical group [O-]C(*)=O 0.000 abstract 3
- 239000000463 material Substances 0.000 description 60
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 18
- 239000002243 precursor Substances 0.000 description 18
- 230000008569 process Effects 0.000 description 18
- 238000012545 processing Methods 0.000 description 16
- 238000011161 development Methods 0.000 description 15
- 235000012431 wafers Nutrition 0.000 description 15
- 125000002524 organometallic group Chemical group 0.000 description 13
- 239000013638 trimer Substances 0.000 description 10
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 238000004630 atomic force microscopy Methods 0.000 description 7
- 239000011295 pitch Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 125000002843 carboxylic acid group Chemical group 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000007062 hydrolysis Effects 0.000 description 6
- 238000006460 hydrolysis reaction Methods 0.000 description 6
- 238000003384 imaging method Methods 0.000 description 6
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000003786 synthesis reaction Methods 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 150000004703 alkoxides Chemical class 0.000 description 5
- 150000007942 carboxylates Chemical class 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 239000003570 air Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000002411 thermogravimetry Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910020923 Sn-O Inorganic materials 0.000 description 3
- 150000001298 alcohols Chemical class 0.000 description 3
- 125000000304 alkynyl group Chemical group 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 238000000119 electrospray ionisation mass spectrum Methods 0.000 description 3
- 238000000572 ellipsometry Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000001953 recrystallisation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- WVYWICLMDOOCFB-UHFFFAOYSA-N 4-methyl-2-pentanol Chemical compound CC(C)CC(C)O WVYWICLMDOOCFB-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 230000001476 alcoholic effect Effects 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 125000001995 cyclobutyl group Chemical group [H]C1([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 2
- 125000001559 cyclopropyl group Chemical group [H]C1([H])C([H])([H])C1([H])* 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 229940116333 ethyl lactate Drugs 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910021518 metal oxyhydroxide Inorganic materials 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000010943 off-gassing Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000003495 polar organic solvent Substances 0.000 description 2
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 229920001897 terpolymer Polymers 0.000 description 2
- GZJSPMSGXOFHFT-UHFFFAOYSA-N tert-butyltin Chemical compound CC(C)(C)[Sn] GZJSPMSGXOFHFT-UHFFFAOYSA-N 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GVOUFPWUYJWQSK-UHFFFAOYSA-N Cyclofenil Chemical group C1=CC(OC(=O)C)=CC=C1C(C=1C=CC(OC(C)=O)=CC=1)=C1CCCCC1 GVOUFPWUYJWQSK-UHFFFAOYSA-N 0.000 description 1
- 229930194542 Keto Natural products 0.000 description 1
- BZLVMXJERCGZMT-UHFFFAOYSA-N Methyl tert-butyl ether Chemical compound COC(C)(C)C BZLVMXJERCGZMT-UHFFFAOYSA-N 0.000 description 1
- HISWIBBQBKEYQD-UHFFFAOYSA-N N-[tert-butyl-bis(dimethylamino)stannyl]-N-methylmethanamine Chemical compound CN(C)[Sn](N(C)C)(N(C)C)C(C)(C)C HISWIBBQBKEYQD-UHFFFAOYSA-N 0.000 description 1
- 239000006057 Non-nutritive feed additive Substances 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910020813 Sn-C Inorganic materials 0.000 description 1
- 229910018732 Sn—C Inorganic materials 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- 238000000560 X-ray reflectometry Methods 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 125000003670 adamantan-2-yl group Chemical group [H]C1([H])C(C2([H])[H])([H])C([H])([H])C3([H])C([*])([H])C1([H])C([H])([H])C2([H])C3([H])[H] 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 229940090047 auto-injector Drugs 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000004657 carbamic acid derivatives Chemical class 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 229960002944 cyclofenil Drugs 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- XCIXKGXIYUWCLL-UHFFFAOYSA-N cyclopentanol Chemical compound OC1CCCC1 XCIXKGXIYUWCLL-UHFFFAOYSA-N 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- VWWMOACCGFHMEV-UHFFFAOYSA-N dicarbide(2-) Chemical compound [C-]#[C-] VWWMOACCGFHMEV-UHFFFAOYSA-N 0.000 description 1
- 238000000113 differential scanning calorimetry Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002330 electrospray ionisation mass spectrometry Methods 0.000 description 1
- 238000001437 electrospray ionisation time-of-flight quadrupole detection Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012457 nonaqueous media Substances 0.000 description 1
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000003608 radiolysis reaction Methods 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- 238000001942 tin-119 nuclear magnetic resonance spectrum Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- JSPLKZUTYZBBKA-UHFFFAOYSA-N trioxidane Chemical compound OOO JSPLKZUTYZBBKA-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/22—Tin compounds
- C07F7/2224—Compounds having one or more tin-oxygen linkages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/325—Non-aqueous compositions
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
- C07B2200/00—Indexing scheme relating to specific properties of organic compounds
- C07B2200/13—Crystalline forms, e.g. polymorphs
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Chemically Coating (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762588546P | 2017-11-20 | 2017-11-20 | |
| US62/588,546 | 2017-11-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW202134255A TW202134255A (zh) | 2021-09-16 |
| TWI803806B true TWI803806B (zh) | 2023-06-01 |
Family
ID=66534919
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110101710A TWI803806B (zh) | 2017-11-20 | 2018-11-19 | 有機錫簇，有機錫簇之溶液，及於高解析度圖案化之應用 |
| TW107141012A TWI719360B (zh) | 2017-11-20 | 2018-11-19 | 有機錫簇，有機錫簇之溶液，及於高解析度圖案化之應用 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107141012A TWI719360B (zh) | 2017-11-20 | 2018-11-19 | 有機錫簇，有機錫簇之溶液，及於高解析度圖案化之應用 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US11098070B2 (enExample) |
| JP (2) | JP7487103B2 (enExample) |
| KR (2) | KR20240019399A (enExample) |
| TW (2) | TWI803806B (enExample) |
| WO (1) | WO2019099981A2 (enExample) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9778561B2 (en) | 2014-01-31 | 2017-10-03 | Lam Research Corporation | Vacuum-integrated hardmask processes and apparatus |
| US10649328B2 (en) | 2016-03-11 | 2020-05-12 | Inpria Corporation | Pre-patterned lithography templates, processes based on radiation patterning using the templates and processes to form the templates |
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US11098070B2 (en) * | 2017-11-20 | 2021-08-24 | Inpria Corporation | Organotin clusters, solutions of organotin clusters, and application to high resolution patterning |
| TW202523764A (zh) | 2018-04-05 | 2025-06-16 | 美商英培雅股份有限公司 | 包含錫化合物的輻射可圖案化塗層及其應用 |
| EP3807721A4 (en) | 2018-06-13 | 2022-04-13 | Brewer Science, Inc. | ADHESION LAYERS FOR EXTREME UV LITHOGRAPHY |
| KR102678588B1 (ko) | 2018-11-14 | 2024-06-27 | 램 리써치 코포레이션 | 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들 |
| WO2020132281A1 (en) | 2018-12-20 | 2020-06-25 | Lam Research Corporation | Dry development of resists |
| US12125711B2 (en) | 2019-03-18 | 2024-10-22 | Lam Research Corporation | Reducing roughness of extreme ultraviolet lithography resists |
| US11327398B2 (en) | 2019-04-30 | 2022-05-10 | Samsung Electronics Co., Ltd. | Photoresist compositions and methods for fabricating semiconductor devices using the same |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI869221B (zh) | 2019-06-26 | 2025-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR20220035149A (ko) | 2019-07-12 | 2022-03-21 | 인프리아 코포레이션 | 기판 상의 무기 방사선 패터닝 조성물의 안정화된 인터페이스 |
| KR102841238B1 (ko) * | 2019-07-22 | 2025-08-01 | 인프리아 코포레이션 | 유기금속성 금속 칼코게나이드 클러스터 및 리소그래피에 대한 적용 |
| US11579531B2 (en) * | 2019-09-25 | 2023-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Organometallic cluster photoresists for EUV lithography |
| EP4651192A2 (en) | 2020-01-15 | 2025-11-19 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
| US12261044B2 (en) | 2020-02-28 | 2025-03-25 | Lam Research Corporation | Multi-layer hardmask for defect reduction in EUV patterning |
| JP7700151B2 (ja) | 2020-05-06 | 2025-06-30 | インプリア・コーポレイション | 中間凍結工程による有機金属光パターニング可能層を用いたマルチパターニング |
| US12416863B2 (en) | 2020-07-01 | 2025-09-16 | Applied Materials, Inc. | Dry develop process of photoresist |
| US11621172B2 (en) | 2020-07-01 | 2023-04-04 | Applied Materials, Inc. | Vapor phase thermal etch solutions for metal oxo photoresists |
| US12159787B2 (en) * | 2020-07-02 | 2024-12-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device and pattern formation method |
| JP7382512B2 (ja) | 2020-07-07 | 2023-11-16 | ラム リサーチ コーポレーション | 照射フォトレジストパターニングのための統合乾式プロセス |
| KR102586112B1 (ko) * | 2020-09-14 | 2023-10-05 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102586099B1 (ko) * | 2020-09-14 | 2023-10-05 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| KR102671848B1 (ko) * | 2020-09-14 | 2024-05-31 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| CN115598943A (zh) | 2020-11-13 | 2023-01-13 | 朗姆研究公司（Us） | 用于干法去除光致抗蚀剂的处理工具 |
| KR102701790B1 (ko) * | 2020-12-15 | 2024-09-04 | 전남대학교산학협력단 | 무기산으로 안정화된 금속산화물 클러스터를 포함하는 포토레지스트용 조성물 |
| KR102690557B1 (ko) | 2020-12-18 | 2024-07-30 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물, 이의 제조 방법 및 이를 이용한 패턴 형성 방법 |
| KR102598259B1 (ko) * | 2020-12-18 | 2023-11-02 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| JP7684409B2 (ja) * | 2021-01-28 | 2025-05-27 | インテグリス・インコーポレーテッド | 有機スズ化合物を調製する方法 |
| US20220365428A1 (en) * | 2021-05-14 | 2022-11-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist materials and associated methods |
| KR20240095279A (ko) * | 2021-11-08 | 2024-06-25 | 인프리아 코포레이션 | 안정성이 강화된 유기주석 포토레지스트 조성물 |
| CN114167685B (zh) * | 2021-12-07 | 2024-10-22 | 山西师范大学 | 有机锡-无机锡杂化Sn18型晶态锡氧簇合物及其制备方法 |
| KR102518770B1 (ko) * | 2021-12-20 | 2023-04-06 | 전남대학교산학협력단 | 클러스터 화합물 또는 이의 염 및 이를 포함하는 포토레지스트 조성물 |
| KR102522001B1 (ko) * | 2021-12-23 | 2023-04-20 | 전남대학교산학협력단 | 클러스터 화합물 또는 이의 염 및 이를 포함하는 포토레지스트 조성물 |
| US20230259024A1 (en) * | 2022-02-11 | 2023-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist, method of manufacturing a semiconductor device and method of extreme ultraviolet lithography |
| CN118159914A (zh) | 2022-07-01 | 2024-06-07 | 朗姆研究公司 | 用于阻止蚀刻停止的金属氧化物基光致抗蚀剂的循环显影 |
| KR102769240B1 (ko) * | 2022-07-12 | 2025-02-21 | 유한회사 디씨티머티리얼 | 반도체 euv 리소그래피 방법 |
| CN117659420A (zh) | 2022-08-29 | 2024-03-08 | 清华大学 | 一种Zn基有机配位纳米颗粒、光刻胶组合物及其制备方法与应用 |
| JP2024092963A (ja) | 2022-12-26 | 2024-07-08 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| KR102686010B1 (ko) | 2022-12-26 | 2024-07-17 | 제이에스아이실리콘주식회사 | 신규한 유기스태닐 실리케이트 화합물, 이들의 제조 방법 및 이들을 포함하는 포토레지스트 조성물 |
| JP2024097389A (ja) * | 2023-01-06 | 2024-07-19 | 信越化学工業株式会社 | 金属含有膜形成用化合物、金属含有膜形成用組成物、及びパターン形成方法 |
| WO2024157904A1 (ja) | 2023-01-23 | 2024-08-02 | 日産化学株式会社 | 金属酸化物レジストパターン形成用有機樹脂組成物 |
| US20240288767A1 (en) * | 2023-01-27 | 2024-08-29 | Taiwan Semiconductor Manufacturing Company | Methods and materials for metallic photoresist |
| JPWO2024181394A1 (enExample) | 2023-02-28 | 2024-09-06 | ||
| JP7769144B2 (ja) | 2023-03-17 | 2025-11-12 | ラム リサーチ コーポレーション | Ｅｕｖパターニングのための乾式現像およびエッチングプロセスの単一プロセスチャンバへの統合 |
| CN116333727B (zh) * | 2023-03-27 | 2025-04-01 | 山西师范大学 | 8-羟基喹啉类多核锡氧团簇晶态发光材料及其制备方法 |
| KR20250020973A (ko) * | 2023-08-04 | 2025-02-11 | 삼성에스디아이 주식회사 | 패턴 형성 방법 |
| CN117023564B (zh) * | 2023-08-07 | 2025-10-28 | 清华大学 | 一种负载锡单原子和团簇的碳材料及其制备方法和应用 |
| CN117430627A (zh) * | 2023-10-26 | 2024-01-23 | 大连理工大学 | 一类双烷基和有机环状羧酸配位的锡氧金属团簇及其合成与应用 |
| WO2025105013A1 (ja) * | 2023-11-15 | 2025-05-22 | 三菱ケミカル株式会社 | スズ化合物、スズ組成物、それらの製造方法、レジスト溶液、パターン形成方法、薄膜、パターン化された薄膜、および基板の製造方法 |
| JP2025118531A (ja) | 2024-01-31 | 2025-08-13 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| KR20250125796A (ko) * | 2024-02-15 | 2025-08-22 | 삼성에스디아이 주식회사 | 반도체 포토레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
| JP2025136880A (ja) | 2024-03-08 | 2025-09-19 | 信越化学工業株式会社 | ネガ型レジストパターン形成方法 |
| JP2025136888A (ja) | 2024-03-08 | 2025-09-19 | 信越化学工業株式会社 | ネガ型レジストパターン形成方法 |
| JP2025139629A (ja) | 2024-03-13 | 2025-09-29 | 信越化学工業株式会社 | レジスト組成物、積層体、及びパターン形成方法 |
| JP2025139627A (ja) | 2024-03-13 | 2025-09-29 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| US20240272547A1 (en) * | 2024-03-28 | 2024-08-15 | Intel Corporation | Tin carboxylate precursors for metal oxide resist layers and related methods |
| JP2025157764A (ja) | 2024-04-03 | 2025-10-16 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| JP2025158084A (ja) | 2024-04-03 | 2025-10-16 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
| CN121005732A (zh) * | 2024-05-24 | 2025-11-25 | 珠海基石科技有限公司 | 有机锡簇结构及其制备方法、图案化组合物、图案化方法、图案化薄膜、图案化基底和电子元器件 |
| CN118393812B (zh) * | 2024-06-24 | 2024-08-30 | 珠海基石科技有限公司 | 图案化组合物、图案化薄膜、图案化基底、半导体器件及其制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170102612A1 (en) * | 2015-10-13 | 2017-04-13 | Inpria Corporation | Organotin oxide hydroxide patterning compositions, precursors, and patterning |
| US20170146909A1 (en) * | 2015-11-20 | 2017-05-25 | Lam Research Corporation | Euv photopatterning of vapor-deposited metal oxide-containing hardmasks |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2317993C1 (ru) * | 2006-07-20 | 2008-02-27 | Государственное образовательное учреждение высшего профессионального образования "Кубанский государственный университет" (КубГУ) | Способ получения три- и тетраорганилалкинилолова |
| US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
| KR102696070B1 (ko) * | 2014-10-23 | 2024-08-16 | 인프리아 코포레이션 | 유기 금속 용액 기반의 고해상도 패터닝 조성물 및 상응하는 방법 |
| IL239852A (en) | 2015-07-08 | 2016-12-29 | Algolion Ltd | Lithium-ion battery safety monitoring |
| US10018920B2 (en) | 2016-03-04 | 2018-07-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Lithography patterning with a gas phase resist |
| US11098070B2 (en) * | 2017-11-20 | 2021-08-24 | Inpria Corporation | Organotin clusters, solutions of organotin clusters, and application to high resolution patterning |
| TW202523764A (zh) * | 2018-04-05 | 2025-06-16 | 美商英培雅股份有限公司 | 包含錫化合物的輻射可圖案化塗層及其應用 |
| US10787466B2 (en) * | 2018-04-11 | 2020-09-29 | Inpria Corporation | Monoalkyl tin compounds with low polyalkyl contamination, their compositions and methods |
| US20220064192A1 (en) * | 2020-08-25 | 2022-03-03 | Inpria Corporation | Methods to produce organotin compositions with convenient ligand providing reactants |
| KR20240095279A (ko) * | 2021-11-08 | 2024-06-25 | 인프리아 코포레이션 | 안정성이 강화된 유기주석 포토레지스트 조성물 |
-
2018
- 2018-11-19 US US16/194,491 patent/US11098070B2/en active Active
- 2018-11-19 TW TW110101710A patent/TWI803806B/zh active
- 2018-11-19 TW TW107141012A patent/TWI719360B/zh active
- 2018-11-19 KR KR1020247003859A patent/KR20240019399A/ko active Pending
- 2018-11-19 KR KR1020207012752A patent/KR102634520B1/ko active Active
- 2018-11-19 WO PCT/US2018/061769 patent/WO2019099981A2/en not_active Ceased
- 2018-11-19 JP JP2020527805A patent/JP7487103B2/ja active Active
-
2021
- 2021-07-20 US US17/380,475 patent/US12129271B2/en active Active
-
2024
- 2024-05-08 JP JP2024075585A patent/JP2024122972A/ja active Pending
- 2024-09-25 US US18/895,654 patent/US20250011346A1/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170102612A1 (en) * | 2015-10-13 | 2017-04-13 | Inpria Corporation | Organotin oxide hydroxide patterning compositions, precursors, and patterning |
| US20170146909A1 (en) * | 2015-11-20 | 2017-05-25 | Lam Research Corporation | Euv photopatterning of vapor-deposited metal oxide-containing hardmasks |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7487103B2 (ja) | 2024-05-20 |
| KR20200078518A (ko) | 2020-07-01 |
| TWI719360B (zh) | 2021-02-21 |
| KR20240019399A (ko) | 2024-02-14 |
| US20210347791A1 (en) | 2021-11-11 |
| WO2019099981A2 (en) | 2019-05-23 |
| JP2021503482A (ja) | 2021-02-12 |
| US20190153001A1 (en) | 2019-05-23 |
| TW202134255A (zh) | 2021-09-16 |
| JP2024122972A (ja) | 2024-09-10 |
| TW201922767A (zh) | 2019-06-16 |
| WO2019099981A3 (en) | 2019-08-08 |
| KR102634520B1 (ko) | 2024-02-06 |
| US12129271B2 (en) | 2024-10-29 |
| US11098070B2 (en) | 2021-08-24 |
| US20250011346A1 (en) | 2025-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI803806B (zh) | 有機錫簇，有機錫簇之溶液，及於高解析度圖案化之應用 | |
| US12071449B2 (en) | Tin dodecamers and radiation patternable coatings with strong EUV absorption | |
| JP7483833B2 (ja) | 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成 | |
| US20240337925A1 (en) | Organometallic metal chalcogenide clusters and application to lithography | |
| US20230374338A1 (en) | Radiation sensitive organotin compositions having oxygen heteroatoms in hydrocarbyl ligand |