JP2021502943A5 - - Google Patents
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- Publication number
- JP2021502943A5 JP2021502943A5 JP2019571537A JP2019571537A JP2021502943A5 JP 2021502943 A5 JP2021502943 A5 JP 2021502943A5 JP 2019571537 A JP2019571537 A JP 2019571537A JP 2019571537 A JP2019571537 A JP 2019571537A JP 2021502943 A5 JP2021502943 A5 JP 2021502943A5
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- single crystal
- crystal substrate
- carbide single
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 23
- 229910010271 silicon carbide Inorganic materials 0.000 claims 23
- 239000013078 crystal Substances 0.000 claims 19
- 239000000758 substrate Substances 0.000 claims 19
- 238000010438 heat treatment Methods 0.000 claims 7
- 238000000137 annealing Methods 0.000 claims 5
- 239000002344 surface layer Substances 0.000 claims 5
- 230000007547 defect Effects 0.000 claims 4
- 239000010410 layer Substances 0.000 claims 4
- 238000001816 cooling Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811204666.3A CN109338463B (zh) | 2018-10-16 | 2018-10-16 | 一种高纯碳化硅单晶衬底 |
| CN201811205277.2 | 2018-10-16 | ||
| CN201811204666.3 | 2018-10-16 | ||
| CN201811205277.2A CN109234802B (zh) | 2018-10-16 | 2018-10-16 | 一种制备高质量的半绝缘碳化硅单晶衬底的方法 |
| PCT/CN2018/123710 WO2020077848A1 (zh) | 2018-10-16 | 2018-12-26 | 一种高纯碳化硅单晶衬底及其制备方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021502943A JP2021502943A (ja) | 2021-02-04 |
| JP2021502943A5 true JP2021502943A5 (enExample) | 2021-04-15 |
| JP7239182B2 JP7239182B2 (ja) | 2023-03-14 |
Family
ID=70283624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019571537A Active JP7239182B2 (ja) | 2018-10-16 | 2018-12-26 | 高純度炭化ケイ素単結晶基板及びその製造方法、応用 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP3666935B1 (enExample) |
| JP (1) | JP7239182B2 (enExample) |
| KR (1) | KR102345680B1 (enExample) |
| TW (1) | TWI723578B (enExample) |
| WO (1) | WO2020077848A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102321229B1 (ko) | 2021-03-30 | 2021-11-03 | 주식회사 쎄닉 | 탄화규소 웨이퍼 및 이를 적용한 반도체 소자 |
| CN113390354A (zh) * | 2021-07-21 | 2021-09-14 | 苏州恒嘉晶体材料有限公司 | 一种衬底片厚度检测装置及测量方法 |
| CN115418725B (zh) * | 2022-07-28 | 2024-04-26 | 浙江大学杭州国际科创中心 | 一种氮化硅薄膜热退火方法和装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6218680B1 (en) * | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
| US6396080B2 (en) | 1999-05-18 | 2002-05-28 | Cree, Inc | Semi-insulating silicon carbide without vanadium domination |
| US6814801B2 (en) * | 2002-06-24 | 2004-11-09 | Cree, Inc. | Method for producing semi-insulating resistivity in high purity silicon carbide crystals |
| US8617965B1 (en) * | 2004-02-19 | 2013-12-31 | Partial Assignment to University of Central Florida | Apparatus and method of forming high crystalline quality layer |
| JP4946264B2 (ja) * | 2006-08-23 | 2012-06-06 | 日立金属株式会社 | 炭化珪素半導体エピタキシャル基板の製造方法 |
| JP2009149481A (ja) * | 2007-12-21 | 2009-07-09 | Siltronic Ag | 半導体基板の製造方法 |
| TW201101484A (en) * | 2009-05-11 | 2011-01-01 | Sumitomo Electric Industries | Insulating gate type bipolar transistor |
| JP5568054B2 (ja) * | 2011-05-16 | 2014-08-06 | トヨタ自動車株式会社 | 半導体素子の製造方法 |
| CN105821471B (zh) * | 2016-05-10 | 2018-10-30 | 山东大学 | 一种低应力高纯半绝缘SiC单晶的制备方法 |
| CN106757357B (zh) * | 2017-01-10 | 2019-04-09 | 山东天岳先进材料科技有限公司 | 一种高纯半绝缘碳化硅衬底的制备方法 |
| CN107723798B (zh) * | 2017-10-30 | 2020-06-02 | 中国电子科技集团公司第四十六研究所 | 一种高效率制备高纯半绝缘碳化硅单晶生长装置及方法 |
| CN108130592B (zh) * | 2017-11-14 | 2019-11-12 | 山东天岳先进材料科技有限公司 | 一种高纯半绝缘碳化硅单晶的制备方法 |
-
2018
- 2018-12-26 EP EP18922090.8A patent/EP3666935B1/en active Active
- 2018-12-26 KR KR1020197037937A patent/KR102345680B1/ko active Active
- 2018-12-26 JP JP2019571537A patent/JP7239182B2/ja active Active
- 2018-12-26 WO PCT/CN2018/123710 patent/WO2020077848A1/zh not_active Ceased
-
2019
- 2019-10-14 TW TW108136951A patent/TWI723578B/zh active
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