JP2021150576A - 赤外線検出器 - Google Patents

赤外線検出器 Download PDF

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Publication number
JP2021150576A
JP2021150576A JP2020051031A JP2020051031A JP2021150576A JP 2021150576 A JP2021150576 A JP 2021150576A JP 2020051031 A JP2020051031 A JP 2020051031A JP 2020051031 A JP2020051031 A JP 2020051031A JP 2021150576 A JP2021150576 A JP 2021150576A
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JP
Japan
Prior art keywords
layer
contact
infrared detector
gaas
barrier layer
Prior art date
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Pending
Application number
JP2020051031A
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English (en)
Japanese (ja)
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JP2021150576A5 (https=
Inventor
弘文 吉川
Hirofumi Yoshikawa
弘文 吉川
泰彦 荒川
Yasuhiko Arakawa
泰彦 荒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
University of Tokyo NUC
Original Assignee
Sharp Corp
University of Tokyo NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp, University of Tokyo NUC filed Critical Sharp Corp
Priority to JP2020051031A priority Critical patent/JP2021150576A/ja
Priority to US17/198,992 priority patent/US20210296517A1/en
Publication of JP2021150576A publication Critical patent/JP2021150576A/ja
Publication of JP2021150576A5 publication Critical patent/JP2021150576A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1243—Active materials comprising only Group III-V materials, e.g. GaAs characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/1625—Semiconductor nanoparticles embedded in semiconductor matrix
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

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  • Light Receiving Elements (AREA)
JP2020051031A 2020-03-23 2020-03-23 赤外線検出器 Pending JP2021150576A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2020051031A JP2021150576A (ja) 2020-03-23 2020-03-23 赤外線検出器
US17/198,992 US20210296517A1 (en) 2020-03-23 2021-03-11 Infrared detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020051031A JP2021150576A (ja) 2020-03-23 2020-03-23 赤外線検出器

Publications (2)

Publication Number Publication Date
JP2021150576A true JP2021150576A (ja) 2021-09-27
JP2021150576A5 JP2021150576A5 (https=) 2022-06-13

Family

ID=77746822

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020051031A Pending JP2021150576A (ja) 2020-03-23 2020-03-23 赤外線検出器

Country Status (2)

Country Link
US (1) US20210296517A1 (https=)
JP (1) JP2021150576A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022073970A (ja) * 2020-10-30 2022-05-17 Ｊｆｅスチール株式会社 溶融Ａｌ－Ｚｎ－Ｓｉ－Ｍｇ系めっき鋼板

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009147193A (ja) * 2007-12-17 2009-07-02 Fujitsu Ltd 量子ドット型赤外線検知器
CN102623523A (zh) * 2012-03-28 2012-08-01 中国科学院半导体研究所 一种有多色响应的量子点红外探测器
US20140175287A1 (en) * 2012-12-21 2014-06-26 Jarrod Vaillancourt Optical Antenna Enhanced Infrared Detector
JP2015162478A (ja) * 2014-02-26 2015-09-07 防衛省技術研究本部長 量子ドット型赤外線検知素子、量子ドット型赤外線検知器及び量子ドット型赤外線撮像装置
JP2016162989A (ja) * 2015-03-05 2016-09-05 富士通株式会社 量子閉じ込め構造光検知器及び赤外線撮像装置
JP2017135229A (ja) * 2016-01-27 2017-08-03 住友電気工業株式会社 半導体積層体、受光素子および半導体積層体の製造方法
JP2017147324A (ja) * 2016-02-17 2017-08-24 日本電気株式会社 赤外線検出器およびその製造方法
JP2018006363A (ja) * 2016-06-27 2018-01-11 シャープ株式会社 光電変換素子およびそれを備えた光電変換装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480591B (en) * 2001-01-15 2002-03-21 Nat Science Council Manufacture method of quantum dot infrared sensor
US8928036B2 (en) * 2008-09-25 2015-01-06 California Institute Of Technology High operating temperature barrier infrared detector with tailorable cutoff wavelength
WO2014087549A1 (ja) * 2012-12-05 2014-06-12 日本電気株式会社 赤外線検出器
US20140175286A1 (en) * 2012-12-21 2014-06-26 Jarrod Vaillancourt High Operating Temperature Quantum Dot Infrared Detector
JP6355085B2 (ja) * 2013-02-07 2018-07-11 シャープ株式会社 光電変換素子
US9548408B2 (en) * 2014-04-15 2017-01-17 L-3 Communications Cincinnati Electronics Corporation Tunneling barrier infrared detector devices
KR101624489B1 (ko) * 2015-06-15 2016-05-26 한국표준과학연구원 공기와 표면플라즈마 공명기 사이의 임피던스를 정합시키기 위하여 메타물질에 기반한 무반사코팅을 이용한 적외선 광검출기
JP6259843B2 (ja) * 2016-01-12 2018-01-10 シャープ株式会社 間接遷移半導体材料を用いた量子構造を有する光電変換素子
EP3343642A1 (en) * 2016-12-16 2018-07-04 Sharp Kabushiki Kaisha Photodetector and method for wavelength peak sensitivity calibration
JP7041337B2 (ja) * 2017-07-13 2022-03-24 富士通株式会社 赤外線検出器、撮像素子、及び撮像システム
KR102547801B1 (ko) * 2017-08-28 2023-06-26 삼성전자주식회사 적외선 검출기 및 이를 포함하는 적외선 센서
JP6917352B2 (ja) * 2018-01-18 2021-08-11 旭化成エレクトロニクス株式会社 赤外線検出素子
EP3664159A1 (en) * 2018-12-03 2020-06-10 Institut Photovoltaique d'Ile de France Photovoltaic cell with an aluminium-arsenic and indium-phosphorous based heterojunction, associated multi-junction cell and associated method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009147193A (ja) * 2007-12-17 2009-07-02 Fujitsu Ltd 量子ドット型赤外線検知器
CN102623523A (zh) * 2012-03-28 2012-08-01 中国科学院半导体研究所 一种有多色响应的量子点红外探测器
US20140175287A1 (en) * 2012-12-21 2014-06-26 Jarrod Vaillancourt Optical Antenna Enhanced Infrared Detector
JP2015162478A (ja) * 2014-02-26 2015-09-07 防衛省技術研究本部長 量子ドット型赤外線検知素子、量子ドット型赤外線検知器及び量子ドット型赤外線撮像装置
JP2016162989A (ja) * 2015-03-05 2016-09-05 富士通株式会社 量子閉じ込め構造光検知器及び赤外線撮像装置
JP2017135229A (ja) * 2016-01-27 2017-08-03 住友電気工業株式会社 半導体積層体、受光素子および半導体積層体の製造方法
JP2017147324A (ja) * 2016-02-17 2017-08-24 日本電気株式会社 赤外線検出器およびその製造方法
JP2018006363A (ja) * 2016-06-27 2018-01-11 シャープ株式会社 光電変換素子およびそれを備えた光電変換装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022073970A (ja) * 2020-10-30 2022-05-17 Ｊｆｅスチール株式会社 溶融Ａｌ－Ｚｎ－Ｓｉ－Ｍｇ系めっき鋼板

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