JP2021068877A - ダイシングテープ、及び半導体部品の製造方法 - Google Patents
ダイシングテープ、及び半導体部品の製造方法 Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/40—Adhesives in the form of films or foils characterised by release liners
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
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- C—CHEMISTRY; METALLURGY
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesive Tapes (AREA)
- Dicing (AREA)
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Abstract
Description
特許文献2には、ループスティフネスが所定の範囲内である基材フィルム上に粘着剤層を有するダイシングテープが記載されている。
特許文献3には、紫外線透過性の基材フィルム上に、ポリチオールを含む紫外線硬化型粘着剤層を有するダイシングテープが記載されている。
特許文献4には、基材上に粘着剤層とフィルム状接着剤を備えるダイシングダイボンディングシートが記載されている。
前記第1基材フィルム及び前記第2基材フィルムが、ポリイミド(PI)樹脂、ポリエーテルスルホン(PES)樹脂、ポリフェニレンサルファイド(PPS)樹脂、ポリエーテルエーテルケトン(PEEK)樹脂、ポリアミドイミド(PAI)樹脂、フッ素樹脂から選択される樹脂フィルムからなる構成でもよい。
前記粘着剤層の、前記第1基材フィルムとは反対側の粘着面に、剥離フィルムを有する構成でもよい。
被着体としては、シリコン(Si)等の半導体ウエハ及び半導体チップに限定されず、ガラス基板、金属基板、樹脂基板、これらの1種以上を含む積層体、電子機器等が挙げられる。これらの被着体においても、上述の半導体部品の製造方法と同様にして、ダイシングテープを貼り付けた被着体をチップ状に切断する工程を行った後、ダイシングテープからチップ状の切断片を剥離する工程を行うことができる。
ヘイズは、国際照明委員会(CIE)標準イルミナントD65光源を用いて、繰り返し3回測定し、平均値を採用した。
分光透過率は、日本分光株式会社製の分光光度計V−670を使用して、365nm、405nm、435nmの波長ごとに繰り返し3回測定し、平均値を採用した。
ヤング率は、チャートの初期傾きから求めた。
引張強度は、試料が破断したときの強度を測定した。
引張伸度は、試料が破断したときの伸び率を測定した。
紫外線(UV)照射は、アイグラフィックス株式会社製の紫外線照射装置を用いて、メタルハライドランプで積算光量4000mJとした。表1では、紫外線照射前の粘着力を「初期」、紫外線照射後の粘着力を「UV照射後」とした。
幅15mm×長さ120mmに切り出した試料に対し、カッターを用いて中心部に一直線にハーフカットを行った。ハーフカットを行った試料に対して、表1のハーフカットを行っていない試料の引張特性と同様に引張特性(ヤング率、引張強度、引張伸度)の測定を行った。結果を表2に示す。なお、ハーフカット実験は、実施例2、3、比較例1、3についてのみ行った。
比較例4のダイシングテープは、オーブン加熱をしなければピックアップ工程に適する引張特性を有しているが、基材フィルムの耐熱性が低いため、オーブン加熱後に引張伸度が低下し、エキスパンド工程で破断しやすくなり、ピックアップ工程に適する引張特性を有しなくなった。
Claims (6)
- ダイシングテープ本体と、前記ダイシングテープ本体を保護する保護層とを有し、
前記ダイシングテープ本体は、粘着剤層と、前記粘着剤層を支持する第1基材フィルムとを有し、
前記保護層は、第2基材フィルムと、前記第2基材フィルムを前記第1基材フィルムに接合する接着剤層とを有することを特徴とするダイシングテープ。 - 前記粘着剤層がエネルギー線の照射により硬化して、粘着力を低下させることができ、前記第1基材フィルム、前記第2基材フィルム及び前記接着剤層が前記エネルギー線を透過することができ、前記エネルギー線の照射後においても、前記接着剤層が、前記第2基材フィルムを前記第1基材フィルムに接合することを特徴とする請求項1に記載のダイシングテープ。
- 前記ダイシングテープの伸び率が80%以上であり、前記接着剤層の伸び率が、前記第1基材フィルム及び前記第2基材フィルムの伸び率より大きいことを特徴とする請求項1又は2に記載のダイシングテープ。
- 前記第1基材フィルム及び前記第2基材フィルムが、ポリイミド(PI)樹脂、ポリエーテルスルホン(PES)樹脂、ポリフェニレンサルファイド(PPS)樹脂、ポリエーテルエーテルケトン(PEEK)樹脂、ポリアミドイミド(PAI)樹脂、フッ素樹脂から選択される樹脂フィルムからなることを特徴とする請求項1〜3のいずれか1項に記載のダイシングテープ。
- 前記粘着剤層の、前記第1基材フィルムとは反対側の粘着面に、剥離フィルムを有することを特徴とする請求項1〜4のいずれか1項に記載のダイシングテープ。
- 請求項1〜5のいずれか1項に記載のダイシングテープを貼り付けた半導体ウエハを半導体チップに切断する工程、及び
前記ダイシングテープから前記半導体チップを剥離する工程
を少なくとも有することを特徴とする、半導体部品の製造方法。
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JP2019195485A JP7411381B2 (ja) | 2019-10-28 | 2019-10-28 | ダイシングテープ、及び半導体部品の製造方法 |
TW109135806A TW202131399A (zh) | 2019-10-28 | 2020-10-16 | 切割帶以及半導體零件之製造方法 |
KR1020200137927A KR20210050466A (ko) | 2019-10-28 | 2020-10-23 | 다이싱 테이프 및 반도체 부품의 제조 방법 |
CN202011162046.5A CN112736009A (zh) | 2019-10-28 | 2020-10-27 | 切割带及半导体部件的制造方法 |
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WO2022230907A1 (ja) * | 2021-04-28 | 2022-11-03 | 藤森工業株式会社 | テープ |
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Citations (9)
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JPS59188940A (ja) * | 1983-04-11 | 1984-10-26 | Hitachi Ltd | 粘着シ−ト |
JPH04147623A (ja) * | 1990-10-11 | 1992-05-21 | Mitsui Toatsu Chem Inc | 半導体ウエハ加工用フィルムの製造方法 |
JP2006339652A (ja) * | 2005-06-03 | 2006-12-14 | Ls Cable Ltd | 半導体用ダイシングダイ接着フィルム |
JP2012156511A (ja) * | 2012-02-08 | 2012-08-16 | Nitto Denko Corp | ダイシング・ダイボンドフィルム |
JP2013155295A (ja) * | 2012-01-30 | 2013-08-15 | Nitto Denko Corp | 伸長性加熱剥離型粘着シート |
WO2018083982A1 (ja) * | 2016-11-01 | 2018-05-11 | リンテック株式会社 | ダイシングダイボンディングシート、及び半導体チップの製造方法 |
JP2018081954A (ja) * | 2016-11-14 | 2018-05-24 | 日東電工株式会社 | シート、テープおよび半導体装置の製造方法 |
JP2018113356A (ja) * | 2017-01-12 | 2018-07-19 | リンテック株式会社 | 半導体加工用シートおよび半導体装置の製造方法 |
JP2018170427A (ja) * | 2017-03-30 | 2018-11-01 | リンテック株式会社 | 半導体加工用シートおよび半導体装置の製造方法 |
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- 2019-10-28 JP JP2019195485A patent/JP7411381B2/ja active Active
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2020
- 2020-10-16 TW TW109135806A patent/TW202131399A/zh unknown
- 2020-10-23 KR KR1020200137927A patent/KR20210050466A/ko unknown
- 2020-10-27 CN CN202011162046.5A patent/CN112736009A/zh active Pending
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CN112736009A (zh) | 2021-04-30 |
KR20210050466A (ko) | 2021-05-07 |
JP7411381B2 (ja) | 2024-01-11 |
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