JP2021051123A - 基板処理方法および基板処理装置 - Google Patents
基板処理方法および基板処理装置 Download PDFInfo
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Abstract
Description
図1は、本実施の形態1における基板処理システム100の構成の例を概略的に示す平面図である。基板処理システム100は、ロードポートLPと、インデクサロボットIRと、センターロボットCRと、制御部90と、少なくとも1つの処理ユニットUT(図1においては4つの処理ユニット)とを含む。複数の処理ユニットUTは、基板SB(ウエハ)を処理するためのものであり、そのうちの少なくとも1つが、詳しくは後述する基板処理装置101に対応する。基板処理装置101は、基板処理に用いることができる枚葉式の装置であり、具体的には、基板SBに付着した有機物を除去する処理に用いることができる枚葉式の装置である。この有機物は、典型的には、使用済のレジスト膜である。このレジスト膜は、例えば、イオン注入工程用の注入マスクとして用いられたものである。基板処理装置101は、チャンバ80を有していてよい。その場合、チャンバ80内の雰囲気を制御することによって、所望の雰囲気中での基板処理を行うことができる。
図7は、本実施の形態2における基板処理装置102の構成を、図5に対応する視野で概略的に示す部分断面図である。図8は、図7の線VIII−VIIIに沿う概略的な部分断面図である。基板処理装置102は、プラズマ源30(図5および図6:実施の形態1)に代わって、プラズマ源30Aを有している。
図9は、本実施の形態3における基板処理装置103が有する液ノズル20Bおよびプラズマ源30Bの配置を概略的に説明する平面図である。液ノズル20Bおよびプラズマ源30Bのそれぞれは、液ノズル20およびプラズマ源30A(図7および図8:実施の形態2)に代わって基板処理装置103に設けられているものである。図10は、図9の線X−Xに沿う概略的な部分断面図である。図11は、図10の線XI−XIに沿う概略的な部分断面図である。
図12は、本実施の形態4における基板処理装置104の構成を、図5に対応する視野で概略的に示す部分断面図である。図13は、図12の線XIII−XIIIに沿う概略的な部分断面図である。
11,52 :軸体
12 :回転モータ(回転駆動部)
20,20B :液ノズル(液供給部)
30,30A〜30C:プラズマ源
31,31A〜31C:第1電極
32,32A〜32C:第2電極
33,33B :配管
33C :誘電体層
39 :ガス送出部
40 :交流電源(電源)
50 :スキャン機構
51 :アーム
53 :角度アクチュエータ(スキャン駆動部)
80 :チャンバ
100 :基板処理システム
101〜104 :基板処理装置
C :キャリア
CR :センターロボット
DP :周方向
DR :半径方向
F1 :下面(第1面)
F2 :上面(第2面)
IR :インデクサロボット
LQ :液膜
PL :プラズマ
PS :基板載置部
SB :基板
UT :処理ユニット
Claims (15)
- 基板上に、硫酸、硫酸塩、ペルオキソ硫酸およびペルオキソ硫酸塩の少なくともいずれかを含む処理液または過酸化水素を含む処理液の液膜を形成する工程と、
前記液膜へプラズマを照射する工程と、
を備える、基板処理方法。 - 前記プラズマを照射する工程は、前記基板の回転をともないながら、前記基板の回転にとっての周方向において部分的に配置された前記プラズマを用いて行われる、請求項1に記載の基板処理方法。
- 前記プラズマを照射する工程は、前記基板の回転にとっての半径方向において前記プラズマの位置を揺動させる工程を含む、請求項2に記載の基板処理方法。
- 前記プラズマを照射する工程は、前記基板の半径方向の位置の全体にわたって延在する前記プラズマを用いて行われる、請求項2に記載の基板処理方法。
- 前記プラズマを照射する工程は、前記基板へプラズマジェットを吹き付ける工程を含む、請求項1から4のいずれか1項に記載の基板処理方法。
- 前記プラズマを照射する工程は、前記プラズマ中の雰囲気を静的に保つ工程を含む、請求項1から4のいずれか1項に記載の基板処理方法。
- 前記液膜を形成する工程は、
前記基板上への前記処理液の供給を開始する工程と、
前記基板上への前記処理液の供給を停止する工程と、
を含み、
前記プラズマを照射する工程は、前記処理液の供給を開始する工程の後かつ前記処理液の供給を停止する工程の前に行われる、
請求項1から6のいずれか1項に記載の基板処理方法。 - 前記液膜を形成する工程は、
前記基板上への前記処理液の供給を開始する工程と、
前記基板上への前記処理液の供給を停止する工程と、
を含み、
前記プラズマを照射する工程は、前記処理液の供給を停止する工程の後に行われる、請求項1から7のいずれか1項に記載の基板処理方法。 - 硫酸、硫酸塩、ペルオキソ硫酸およびペルオキソ硫酸塩の少なくともいずれかを含む処理液または過酸化水素を含む処理液を用いて基板を処理するための基板処理装置であって、
前記基板を保持する保持部と、
前記基板上に前記処理液の液膜が形成されるように前記基板上へ前記処理液を供給する液供給部と、
前記液膜へプラズマを照射するプラズマ源と、
を備える、基板処理装置。 - 前記基板の回転を得るために前記保持部を回転させる回転駆動部をさらに備え
前記プラズマ源は、前記基板の回転にとっての半径方向において揺動可能に構成されている、請求項9に記載の基板処理装置。 - 前記基板の回転を得るために前記保持部を回転させる回転駆動部をさらに備え、
前記プラズマ源は、前記基板の半径方向の位置の全体にわたって延在する前記プラズマを発生させる、請求項9に記載の基板処理装置。 - 前記プラズマ源は、
ガスの供給を受けるガス入口と、前記基板の方を向くように配置されたガス出口と、を有する配管と、
前記配管中に配置された第1電極と、
前記配管外に配置された第2電極と、
を含む、請求項9から11のいずれか1項に記載の基板処理装置。 - 前記第2電極は、前記基板上へ供給される前記処理液の経路から離れている、請求項12に記載の基板処理装置。
- 前記第2電極は、前記基板上へ供給される前記処理液の経路に接している、請求項12に記載の基板処理装置。
- 前記プラズマ源は、
前記液膜の方を向く第1面と、前記第1面と反対の第2面とを有する誘電体層と、
前記液膜から離れて前記第1面上に配置された第1電極と、
前記第2面上に配置された第2電極と、
を含む、請求項9から11のいずれか1項に記載の基板処理装置。
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