JP2021038136A5 - - Google Patents
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- Publication number
- JP2021038136A5 JP2021038136A5 JP2020176243A JP2020176243A JP2021038136A5 JP 2021038136 A5 JP2021038136 A5 JP 2021038136A5 JP 2020176243 A JP2020176243 A JP 2020176243A JP 2020176243 A JP2020176243 A JP 2020176243A JP 2021038136 A5 JP2021038136 A5 JP 2021038136A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- film according
- support substrate
- ratio
- defect density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 16
- 239000013078 crystal Substances 0.000 claims 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims 2
- 230000007547 defect Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052800 carbon group element Inorganic materials 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 239000006104 solid solution Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019017515 | 2019-04-24 | ||
| JPPCT/JP2019/017515 | 2019-04-24 | ||
| JP2020538732A JP6784870B1 (ja) | 2019-04-24 | 2019-09-10 | 半導体膜 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020538732A Division JP6784870B1 (ja) | 2019-04-24 | 2019-09-10 | 半導体膜 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021038136A JP2021038136A (ja) | 2021-03-11 |
| JP2021038136A5 true JP2021038136A5 (https=) | 2022-04-26 |
| JP7410009B2 JP7410009B2 (ja) | 2024-01-09 |
Family
ID=72941625
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020538732A Active JP6784870B1 (ja) | 2019-04-24 | 2019-09-10 | 半導体膜 |
| JP2020176243A Active JP7410009B2 (ja) | 2019-04-24 | 2020-10-20 | 半導体膜 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020538732A Active JP6784870B1 (ja) | 2019-04-24 | 2019-09-10 | 半導体膜 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11942520B2 (https=) |
| EP (1) | EP3960914A4 (https=) |
| JP (2) | JP6784870B1 (https=) |
| CN (1) | CN113677833B (https=) |
| WO (1) | WO2020217563A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202235664A (zh) * | 2021-03-12 | 2022-09-16 | 日商信越化學工業股份有限公司 | 氧化物半導體膜及其成膜方法、半導體裝置 |
| WO2023048150A1 (ja) * | 2021-09-22 | 2023-03-30 | 株式会社Flosfia | 結晶膜の製造方法および結晶膜 |
| KR102546042B1 (ko) * | 2021-12-22 | 2023-06-22 | 주식회사루미지엔테크 | HVPE법에 따른 Ga2O3 결정막 증착방법, 증착장치 및 이를 사용한 Ga2O3 결정막 증착 기판 |
| WO2025203572A1 (ja) * | 2024-03-29 | 2025-10-02 | 日本碍子株式会社 | 下地基板 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02263427A (ja) * | 1989-04-03 | 1990-10-26 | Sumitomo Metal Ind Ltd | 化合物半導体基板およびその製造方法 |
| JP3079509B2 (ja) * | 1992-03-11 | 2000-08-21 | 日立建機株式会社 | 薄膜積層結晶体およびその製造方法 |
| JP3795765B2 (ja) * | 2001-04-06 | 2006-07-12 | ソニー株式会社 | 化合物半導体基板の製造方法 |
| JP4189386B2 (ja) * | 2005-01-27 | 2008-12-03 | ローム株式会社 | 窒化物半導体結晶層の成長方法および窒化物半導体発光素子の製法 |
| DE102009008371A1 (de) * | 2009-02-11 | 2010-08-12 | Schott Solar Ag | Integraler Prozeß von Waferherstellung bis Modulfertigung zur Herstellung von Wafern, Solarzellen und Solarmodulen |
| KR101932576B1 (ko) * | 2010-09-13 | 2018-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| JP5343224B1 (ja) * | 2012-09-28 | 2013-11-13 | Ｒｏｃａ株式会社 | 半導体装置および結晶 |
| JP6067532B2 (ja) * | 2013-10-10 | 2017-01-25 | 株式会社Flosfia | 半導体装置 |
| JP6233959B2 (ja) * | 2013-10-10 | 2017-11-22 | 株式会社Flosfia | 酸化物結晶薄膜の製造方法 |
| JP6349592B2 (ja) | 2014-07-22 | 2018-07-04 | 株式会社Flosfia | 半導体装置 |
| JP6422159B2 (ja) * | 2015-02-25 | 2018-11-14 | 国立研究開発法人物質・材料研究機構 | α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子 |
| JP2016157879A (ja) * | 2015-02-25 | 2016-09-01 | 株式会社Flosfia | 結晶性酸化物半導体膜、半導体装置 |
| JP6471921B2 (ja) * | 2015-03-24 | 2019-02-20 | 株式会社村田製作所 | 薄膜構造体、及び薄膜構造体の製造方法、並びに半導体デバイス |
| JP6945121B2 (ja) * | 2015-09-30 | 2021-10-06 | 株式会社Flosfia | 結晶性半導体膜および半導体装置 |
| KR102527306B1 (ko) * | 2016-01-18 | 2023-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 금속 산화물막, 반도체 장치, 및 표시 장치 |
| US10804362B2 (en) * | 2016-08-31 | 2020-10-13 | Flosfia Inc. | Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system |
| JP2020001997A (ja) * | 2017-08-21 | 2020-01-09 | 株式会社Flosfia | 結晶膜の製造方法 |
| CN108615672B (zh) * | 2018-04-17 | 2020-09-04 | 中山大学 | 一种半导体结晶膜的制备方法及其半导体结晶膜 |
| EP3816330A4 (en) | 2018-06-26 | 2022-10-05 | Flosfia Inc. | CRYSTALLINE OXIDE FILM |
| JP7404593B2 (ja) * | 2018-06-26 | 2023-12-26 | 株式会社Flosfia | 成膜方法および結晶性積層構造体 |
| US11088242B2 (en) * | 2019-03-29 | 2021-08-10 | Flosfia Inc. | Crystal, crystalline oxide semiconductor, semiconductor film containing crystalline oxide semiconductor, semiconductor device including crystal and/or semiconductor film and system including semiconductor device |
| US10992103B1 (en) * | 2019-12-02 | 2021-04-27 | Sharp Fukuyama Laser Co., Ltd. | Laser device |
-
2019
- 2019-09-10 EP EP19925739.5A patent/EP3960914A4/en active Pending
- 2019-09-10 JP JP2020538732A patent/JP6784870B1/ja active Active
- 2019-09-10 CN CN201980093708.7A patent/CN113677833B/zh active Active
- 2019-09-10 WO PCT/JP2019/035513 patent/WO2020217563A1/ja not_active Ceased
-
2020
- 2020-10-20 JP JP2020176243A patent/JP7410009B2/ja active Active
-
2021
- 2021-10-13 US US17/450,705 patent/US11942520B2/en active Active
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