JP2021042120A5 - - Google Patents
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- Publication number
- JP2021042120A5 JP2021042120A5 JP2020176244A JP2020176244A JP2021042120A5 JP 2021042120 A5 JP2021042120 A5 JP 2021042120A5 JP 2020176244 A JP2020176244 A JP 2020176244A JP 2020176244 A JP2020176244 A JP 2020176244A JP 2021042120 A5 JP2021042120 A5 JP 2021042120A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- fwhm
- film according
- front surface
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 16
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 229910052800 carbon group element Inorganic materials 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 239000006104 solid solution Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPPCT/JP2019/017516 | 2019-04-24 | ||
| JP2019017516 | 2019-04-24 | ||
| JP2020538744A JP6784871B1 (ja) | 2019-04-24 | 2019-09-10 | 半導体膜 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020538744A Division JP6784871B1 (ja) | 2019-04-24 | 2019-09-10 | 半導体膜 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021042120A JP2021042120A (ja) | 2021-03-18 |
| JP2021042120A5 true JP2021042120A5 (https=) | 2022-04-26 |
| JP7461851B2 JP7461851B2 (ja) | 2024-04-04 |
Family
ID=72941607
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020538744A Active JP6784871B1 (ja) | 2019-04-24 | 2019-09-10 | 半導体膜 |
| JP2020176244A Active JP7461851B2 (ja) | 2019-04-24 | 2020-10-20 | 半導体膜 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020538744A Active JP6784871B1 (ja) | 2019-04-24 | 2019-09-10 | 半導体膜 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20220029022A1 (https=) |
| EP (1) | EP3960915A4 (https=) |
| JP (2) | JP6784871B1 (https=) |
| CN (1) | CN113677834A (https=) |
| WO (1) | WO2020217564A1 (https=) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114423883B (zh) * | 2019-09-30 | 2024-03-12 | 日本碍子株式会社 | α－Ga2O3系半导体膜 |
| US11804519B2 (en) * | 2020-04-24 | 2023-10-31 | Flosfia Inc. | Crystalline multilayer structure, semiconductor device, and method of manufacturing crystalline structure |
| WO2022196505A1 (ja) | 2021-03-16 | 2022-09-22 | 東レ株式会社 | ポリアミド樹脂組成物、およびそれを成形してなる成形品 |
| TWM633935U (zh) * | 2021-04-07 | 2022-11-11 | 日商信越化學工業股份有限公司 | 積層體的製造系統、積層體以及半導體裝置 |
| WO2022230342A1 (ja) * | 2021-04-27 | 2022-11-03 | 日本碍子株式会社 | 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法 |
| KR102546042B1 (ko) | 2021-12-22 | 2023-06-22 | 주식회사루미지엔테크 | HVPE법에 따른 Ga2O3 결정막 증착방법, 증착장치 및 이를 사용한 Ga2O3 결정막 증착 기판 |
| US20250133797A1 (en) * | 2022-02-02 | 2025-04-24 | Shin-Etsu Chemical Co., Ltd. | Crystalline oxide film, laminated structure, semiconductor device, and method for producing crystalline oxide film |
| WO2024043134A1 (ja) * | 2022-08-26 | 2024-02-29 | 信越化学工業株式会社 | 成膜方法、成膜装置、サセプター、及びα－酸化ガリウム膜 |
| CN117646191A (zh) * | 2023-12-27 | 2024-03-05 | 拓荆科技(上海)有限公司 | 反应前体蒸发器和含彼的原子层沉积系统 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008091470A (ja) * | 2006-09-29 | 2008-04-17 | Showa Denko Kk | Ｉｉｉ族窒化物化合物半導体積層構造体の成膜方法 |
| CN101578715A (zh) * | 2007-01-16 | 2009-11-11 | 昭和电工株式会社 | Ⅲ族氮化物化合物半导体元件及其制造方法、ⅲ族氮化物化合物半导体发光元件及其制造方法和灯 |
| JP5793732B2 (ja) * | 2011-07-27 | 2015-10-14 | 高知県公立大学法人 | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
| JP6067532B2 (ja) | 2013-10-10 | 2017-01-25 | 株式会社Flosfia | 半導体装置 |
| JP6013383B2 (ja) * | 2014-02-28 | 2016-10-25 | 株式会社タムラ製作所 | β−Ｇａ２Ｏ３系単結晶基板の製造方法 |
| JP2015196603A (ja) * | 2014-03-31 | 2015-11-09 | 株式会社Flosfia | 結晶性積層構造体、半導体装置 |
| US10109707B2 (en) * | 2014-03-31 | 2018-10-23 | Flosfia Inc. | Crystalline multilayer oxide thin films structure in semiconductor device |
| JP6349592B2 (ja) | 2014-07-22 | 2018-07-04 | 株式会社Flosfia | 半導体装置 |
| JP6281146B2 (ja) | 2014-07-22 | 2018-02-21 | 株式会社Flosfia | 結晶性半導体膜および板状体ならびに半導体装置 |
| JP6539906B2 (ja) * | 2014-09-25 | 2019-07-10 | 株式会社Flosfia | 結晶性積層構造体の製造方法および半導体装置 |
| JP6422159B2 (ja) * | 2015-02-25 | 2018-11-14 | 国立研究開発法人物質・材料研究機構 | α−Ｇａ２Ｏ３単結晶、α−Ｇａ２Ｏ３の製造方法、および、それを用いた半導体素子 |
| JP6876895B2 (ja) * | 2015-02-25 | 2021-05-26 | 株式会社Flosfia | 結晶性酸化物半導体膜、半導体装置 |
| JP5987229B2 (ja) * | 2015-03-09 | 2016-09-07 | 高知県公立大学法人 | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
| CN115101587A (zh) * | 2016-11-07 | 2022-09-23 | 株式会社Flosfia | 结晶性多层结构、半导体装置及多层结构 |
| CN109000790B (zh) * | 2018-05-30 | 2021-09-07 | 金华紫芯科技有限公司 | 一种氧化镓基柔性日盲紫外火焰探测器及其制备方法 |
-
2019
- 2019-09-10 WO PCT/JP2019/035514 patent/WO2020217564A1/ja not_active Ceased
- 2019-09-10 JP JP2020538744A patent/JP6784871B1/ja active Active
- 2019-09-10 EP EP19925779.1A patent/EP3960915A4/en active Pending
- 2019-09-10 CN CN201980093713.8A patent/CN113677834A/zh active Pending
-
2020
- 2020-10-20 JP JP2020176244A patent/JP7461851B2/ja active Active
-
2021
- 2021-10-13 US US17/450,706 patent/US20220029022A1/en active Pending
-
2025
- 2025-01-14 US US19/019,799 patent/US20250159937A1/en active Pending
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