JP2023134567A5 - - Google Patents

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Publication number
JP2023134567A5
JP2023134567A5 JP2023110746A JP2023110746A JP2023134567A5 JP 2023134567 A5 JP2023134567 A5 JP 2023134567A5 JP 2023110746 A JP2023110746 A JP 2023110746A JP 2023110746 A JP2023110746 A JP 2023110746A JP 2023134567 A5 JP2023134567 A5 JP 2023134567A5
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JP
Japan
Prior art keywords
single crystal
layer containing
arcsec
laminate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023110746A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023134567A (ja
Filing date
Publication date
Priority claimed from JP2023512692A external-priority patent/JP7380948B2/ja
Application filed filed Critical
Publication of JP2023134567A publication Critical patent/JP2023134567A/ja
Publication of JP2023134567A5 publication Critical patent/JP2023134567A5/ja
Pending legal-status Critical Current

Links

JP2023110746A 2021-11-01 2023-07-05 β-Ga2O3/β-Ga2O3積層体の製造方法 Pending JP2023134567A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2021178650 2021-11-01
JP2021178650 2021-11-01
JP2023512692A JP7380948B2 (ja) 2021-11-01 2022-10-28 β-Ga2O3/β-Ga2O3積層体の製造方法
PCT/JP2022/040309 WO2023074836A1 (ja) 2021-11-01 2022-10-28 β-Ga2O3/β-Ga2O3積層体の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2023512692A Division JP7380948B2 (ja) 2021-11-01 2022-10-28 β-Ga2O3/β-Ga2O3積層体の製造方法

Publications (2)

Publication Number Publication Date
JP2023134567A JP2023134567A (ja) 2023-09-27
JP2023134567A5 true JP2023134567A5 (https=) 2025-09-16

Family

ID=86159992

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023512692A Active JP7380948B2 (ja) 2021-11-01 2022-10-28 β-Ga2O3/β-Ga2O3積層体の製造方法
JP2023110746A Pending JP2023134567A (ja) 2021-11-01 2023-07-05 β-Ga2O3/β-Ga2O3積層体の製造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2023512692A Active JP7380948B2 (ja) 2021-11-01 2022-10-28 β-Ga2O3/β-Ga2O3積層体の製造方法

Country Status (7)

Country Link
US (1) US20240417881A1 (https=)
EP (1) EP4411028B1 (https=)
JP (2) JP7380948B2 (https=)
KR (1) KR102927254B1 (https=)
CN (1) CN118159694A (https=)
TW (1) TW202328516A (https=)
WO (1) WO2023074836A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2025177952A1 (https=) * 2024-02-22 2025-08-28
CN119041012B (zh) * 2024-10-30 2025-01-28 安徽科瑞思创晶体材料有限责任公司 一种利用液相外延制备稀土掺杂铁石榴石薄膜的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3679097B2 (ja) * 2002-05-31 2005-08-03 株式会社光波 発光素子
EP1997941B1 (en) * 2006-03-01 2014-12-17 Mitsubishi Gas Chemical Company, Inc. PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH
JP2010280533A (ja) * 2009-06-04 2010-12-16 Mitsubishi Gas Chemical Co Inc 液相エピタキシャル成長法による励起子発光型ZnOシンチレータの製造方法
JP5794955B2 (ja) * 2012-07-11 2015-10-14 信越化学工業株式会社 β−Ga2O3単結晶膜付基板の製造方法
JP5747110B1 (ja) * 2014-06-30 2015-07-08 株式会社タムラ製作所 Ga2O3系単結晶基板
JP6744523B2 (ja) * 2015-12-16 2020-08-19 株式会社タムラ製作所 半導体基板、並びにエピタキシャルウエハ及びその製造方法
JP6714760B2 (ja) * 2019-07-31 2020-06-24 株式会社タムラ製作所 Ga2O3系単結晶基板

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