KR102927254B1 - β-Ga2O3/β-Ga2O3 적층체의 제조 방법 - Google Patents

β-Ga2O3/β-Ga2O3 적층체의 제조 방법

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Publication number
KR102927254B1
KR102927254B1 KR1020247008343A KR20247008343A KR102927254B1 KR 102927254 B1 KR102927254 B1 KR 102927254B1 KR 1020247008343 A KR1020247008343 A KR 1020247008343A KR 20247008343 A KR20247008343 A KR 20247008343A KR 102927254 B1 KR102927254 B1 KR 102927254B1
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laminate
mol
growth
solvent
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KR20240045295A (ko
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히데유키 세키와
히로아키 다도코로
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미츠비시 가스 가가쿠 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
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    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
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    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
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    • H10P14/34—Deposited materials, e.g. layers
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
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    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
KR1020247008343A 2021-11-01 2022-10-28 β-Ga2O3/β-Ga2O3 적층체의 제조 방법 Active KR102927254B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2021-178650 2021-11-01
JP2021178650 2021-11-01
PCT/JP2022/040309 WO2023074836A1 (ja) 2021-11-01 2022-10-28 β－Ｇａ２Ｏ３／β－Ｇａ２Ｏ３積層体の製造方法

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KR20240045295A KR20240045295A (ko) 2024-04-05
KR102927254B1 true KR102927254B1 (ko) 2026-02-12

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US (1) US20240417881A1 (https=)
EP (1) EP4411028B1 (https=)
JP (2) JP7380948B2 (https=)
KR (1) KR102927254B1 (https=)
CN (1) CN118159694A (https=)
TW (1) TW202328516A (https=)
WO (1) WO2023074836A1 (https=)

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JPWO2025177952A1 (https=) * 2024-02-22 2025-08-28
CN119041012B (zh) * 2024-10-30 2025-01-28 安徽科瑞思创晶体材料有限责任公司 一种利用液相外延制备稀土掺杂铁石榴石薄膜的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014015366A (ja) * 2012-07-11 2014-01-30 Shin Etsu Chem Co Ltd β−Ｇａ２Ｏ３単結晶膜付基板及びその製造方法
JP2017109902A (ja) * 2015-12-16 2017-06-22 株式会社タムラ製作所 半導体基板、並びにエピタキシャルウエハ及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3679097B2 (ja) * 2002-05-31 2005-08-03 株式会社光波 発光素子
EP1997941B1 (en) * 2006-03-01 2014-12-17 Mitsubishi Gas Chemical Company, Inc. PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH
JP2010280533A (ja) * 2009-06-04 2010-12-16 Mitsubishi Gas Chemical Co Inc 液相エピタキシャル成長法による励起子発光型ＺｎＯシンチレータの製造方法
JP5747110B1 (ja) * 2014-06-30 2015-07-08 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板
JP6714760B2 (ja) * 2019-07-31 2020-06-24 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014015366A (ja) * 2012-07-11 2014-01-30 Shin Etsu Chem Co Ltd β−Ｇａ２Ｏ３単結晶膜付基板及びその製造方法
JP2017109902A (ja) * 2015-12-16 2017-06-22 株式会社タムラ製作所 半導体基板、並びにエピタキシャルウエハ及びその製造方法

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Publication number Publication date
TW202328516A (zh) 2023-07-16
EP4411028A1 (en) 2024-08-07
US20240417881A1 (en) 2024-12-19
EP4411028B1 (en) 2026-02-25
EP4411028A4 (en) 2024-12-04
WO2023074836A1 (ja) 2023-05-04
KR20240045295A (ko) 2024-04-05
JP2023134567A (ja) 2023-09-27
CN118159694A (zh) 2024-06-07
EP4411028C0 (en) 2026-02-25
JPWO2023074836A1 (https=) 2023-05-04
JP7380948B2 (ja) 2023-11-15

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