JPWO2023074836A1 - - Google Patents
Info
- Publication number
- JPWO2023074836A1 JPWO2023074836A1 JP2023512692A JP2023512692A JPWO2023074836A1 JP WO2023074836 A1 JPWO2023074836 A1 JP WO2023074836A1 JP 2023512692 A JP2023512692 A JP 2023512692A JP 2023512692 A JP2023512692 A JP 2023512692A JP WO2023074836 A1 JPWO2023074836 A1 JP WO2023074836A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/12—Liquid-phase epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/263—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using melted materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
- H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
- H10P14/2901—Materials
- H10P14/2918—Materials being semiconductor metal oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3442—N-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3444—P-type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3438—Doping during depositing
- H10P14/3441—Conductivity type
- H10P14/3446—Transition metal elements; Rare earth elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
- H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
- H10P14/3202—Materials thereof
- H10P14/3234—Materials thereof being oxide semiconducting materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023110746A JP2023134567A (ja) | 2021-11-01 | 2023-07-05 | β－Ｇａ２Ｏ３／β－Ｇａ２Ｏ３積層体の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021178650 | 2021-11-01 | ||
| JP2021178650 | 2021-11-01 | ||
| PCT/JP2022/040309 WO2023074836A1 (ja) | 2021-11-01 | 2022-10-28 | β－Ｇａ２Ｏ３／β－Ｇａ２Ｏ３積層体の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023110746A Division JP2023134567A (ja) | 2021-11-01 | 2023-07-05 | β－Ｇａ２Ｏ３／β－Ｇａ２Ｏ３積層体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023074836A1 true JPWO2023074836A1 (https=) | 2023-05-04 |
| JP7380948B2 JP7380948B2 (ja) | 2023-11-15 |
Family
ID=86159992
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023512692A Active JP7380948B2 (ja) | 2021-11-01 | 2022-10-28 | β－Ｇａ２Ｏ３／β－Ｇａ２Ｏ３積層体の製造方法 |
| JP2023110746A Pending JP2023134567A (ja) | 2021-11-01 | 2023-07-05 | β－Ｇａ２Ｏ３／β－Ｇａ２Ｏ３積層体の製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023110746A Pending JP2023134567A (ja) | 2021-11-01 | 2023-07-05 | β－Ｇａ２Ｏ３／β－Ｇａ２Ｏ３積層体の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20240417881A1 (https=) |
| EP (1) | EP4411028B1 (https=) |
| JP (2) | JP7380948B2 (https=) |
| KR (1) | KR102927254B1 (https=) |
| CN (1) | CN118159694A (https=) |
| TW (1) | TW202328516A (https=) |
| WO (1) | WO2023074836A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2025177952A1 (https=) * | 2024-02-22 | 2025-08-28 | ||
| CN119041012B (zh) * | 2024-10-30 | 2025-01-28 | 安徽科瑞思创晶体材料有限责任公司 | 一种利用液相外延制备稀土掺杂铁石榴石薄膜的方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010280533A (ja) * | 2009-06-04 | 2010-12-16 | Mitsubishi Gas Chemical Co Inc | 液相エピタキシャル成長法による励起子発光型ＺｎＯシンチレータの製造方法 |
| JP5794955B2 (ja) * | 2012-07-11 | 2015-10-14 | 信越化学工業株式会社 | β−Ｇａ２Ｏ３単結晶膜付基板の製造方法 |
| JP2019182744A (ja) * | 2019-07-31 | 2019-10-24 | 株式会社タムラ製作所 | Ｇａ２Ｏ３系単結晶基板 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3679097B2 (ja) * | 2002-05-31 | 2005-08-03 | 株式会社光波 | 発光素子 |
| EP1997941B1 (en) * | 2006-03-01 | 2014-12-17 | Mitsubishi Gas Chemical Company, Inc. | PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL ACCORDING TO METHOD OF LIQUID PHASE GROWTH |
| JP5747110B1 (ja) * | 2014-06-30 | 2015-07-08 | 株式会社タムラ製作所 | Ｇａ２Ｏ３系単結晶基板 |
| JP6744523B2 (ja) * | 2015-12-16 | 2020-08-19 | 株式会社タムラ製作所 | 半導体基板、並びにエピタキシャルウエハ及びその製造方法 |
-
2022
- 2022-10-28 KR KR1020247008343A patent/KR102927254B1/ko active Active
- 2022-10-28 US US18/703,762 patent/US20240417881A1/en active Pending
- 2022-10-28 JP JP2023512692A patent/JP7380948B2/ja active Active
- 2022-10-28 WO PCT/JP2022/040309 patent/WO2023074836A1/ja not_active Ceased
- 2022-10-28 CN CN202280071198.5A patent/CN118159694A/zh active Pending
- 2022-10-28 EP EP22887161.2A patent/EP4411028B1/en active Active
- 2022-10-31 TW TW111141303A patent/TW202328516A/zh unknown
-
2023
- 2023-07-05 JP JP2023110746A patent/JP2023134567A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010280533A (ja) * | 2009-06-04 | 2010-12-16 | Mitsubishi Gas Chemical Co Inc | 液相エピタキシャル成長法による励起子発光型ＺｎＯシンチレータの製造方法 |
| JP5794955B2 (ja) * | 2012-07-11 | 2015-10-14 | 信越化学工業株式会社 | β−Ｇａ２Ｏ３単結晶膜付基板の製造方法 |
| JP2019182744A (ja) * | 2019-07-31 | 2019-10-24 | 株式会社タムラ製作所 | Ｇａ２Ｏ３系単結晶基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202328516A (zh) | 2023-07-16 |
| EP4411028A1 (en) | 2024-08-07 |
| US20240417881A1 (en) | 2024-12-19 |
| EP4411028B1 (en) | 2026-02-25 |
| EP4411028A4 (en) | 2024-12-04 |
| WO2023074836A1 (ja) | 2023-05-04 |
| KR102927254B1 (ko) | 2026-02-12 |
| KR20240045295A (ko) | 2024-04-05 |
| JP2023134567A (ja) | 2023-09-27 |
| CN118159694A (zh) | 2024-06-07 |
| EP4411028C0 (en) | 2026-02-25 |
| JP7380948B2 (ja) | 2023-11-15 |
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