JPWO2022168372A5 - - Google Patents

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Publication number
JPWO2022168372A5
JPWO2022168372A5 JP2022579333A JP2022579333A JPWO2022168372A5 JP WO2022168372 A5 JPWO2022168372 A5 JP WO2022168372A5 JP 2022579333 A JP2022579333 A JP 2022579333A JP 2022579333 A JP2022579333 A JP 2022579333A JP WO2022168372 A5 JPWO2022168372 A5 JP WO2022168372A5
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JP
Japan
Prior art keywords
rare earth
concentration
sic
substrate according
sic substrate
Prior art date
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Application number
JP2022579333A
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English (en)
Japanese (ja)
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JP7538900B2 (ja
JPWO2022168372A1 (https=
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Priority claimed from PCT/JP2021/037793 external-priority patent/WO2022168372A1/ja
Publication of JPWO2022168372A1 publication Critical patent/JPWO2022168372A1/ja
Publication of JPWO2022168372A5 publication Critical patent/JPWO2022168372A5/ja
Application granted granted Critical
Publication of JP7538900B2 publication Critical patent/JP7538900B2/ja
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JP2022579333A 2021-02-05 2021-10-12 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板 Active JP7538900B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021017823 2021-02-05
JP2021017823 2021-02-05
PCT/JP2021/037793 WO2022168372A1 (ja) 2021-02-05 2021-10-12 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板

Publications (3)

Publication Number Publication Date
JPWO2022168372A1 JPWO2022168372A1 (https=) 2022-08-11
JPWO2022168372A5 true JPWO2022168372A5 (https=) 2023-04-26
JP7538900B2 JP7538900B2 (ja) 2024-08-22

Family

ID=82741001

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022579333A Active JP7538900B2 (ja) 2021-02-05 2021-10-12 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板

Country Status (2)

Country Link
JP (1) JP7538900B2 (https=)
WO (1) WO2022168372A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4579006A1 (en) * 2022-08-22 2025-07-02 NGK Insulators, Ltd. Sic substrate and sic composite substrate
JPWO2024202200A1 (https=) * 2023-03-28 2024-10-03
JP2024169169A (ja) * 2023-05-25 2024-12-05 住友金属鉱山株式会社 ＳｉＣ半導体装置用基板、ＳｉＣ接合基板、ＳｉＣ多結晶基板およびＳｉＣ多結晶基板の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11268995A (ja) * 1998-03-20 1999-10-05 Denso Corp 炭化珪素単結晶の製造方法
JP2004323293A (ja) * 2003-04-24 2004-11-18 Toyota Motor Corp ＳｉＣ単結晶の製造方法
JP5218348B2 (ja) * 2009-09-03 2013-06-26 新日鐵住金株式会社 炭化珪素単結晶の製造方法
WO2021149235A1 (ja) * 2020-01-24 2021-07-29 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法
WO2021149598A1 (ja) * 2020-01-24 2021-07-29 日本碍子株式会社 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板
CN111270304A (zh) * 2020-03-27 2020-06-12 江苏超芯星半导体有限公司 一种制备4h碳化硅单晶的方法

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