JPWO2024202200A1 - - Google Patents
Info
- Publication number
- JPWO2024202200A1 JPWO2024202200A1 JP2025509693A JP2025509693A JPWO2024202200A1 JP WO2024202200 A1 JPWO2024202200 A1 JP WO2024202200A1 JP 2025509693 A JP2025509693 A JP 2025509693A JP 2025509693 A JP2025509693 A JP 2025509693A JP WO2024202200 A1 JPWO2024202200 A1 JP WO2024202200A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023052397 | 2023-03-28 | ||
| PCT/JP2023/040962 WO2024202200A1 (ja) | 2023-03-28 | 2023-11-14 | ＳｉＣ基板及びＳｉＣ複合基板 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2024202200A1 true JPWO2024202200A1 (https=) | 2024-10-03 |
Family
ID=92903755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025509693A Pending JPWO2024202200A1 (https=) | 2023-03-28 | 2023-11-14 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20260022494A1 (https=) |
| EP (1) | EP4692430A1 (https=) |
| JP (1) | JPWO2024202200A1 (https=) |
| CN (1) | CN120858208A (https=) |
| WO (1) | WO2024202200A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5750363B2 (ja) | 2011-12-02 | 2015-07-22 | 株式会社豊田中央研究所 | ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス |
| JP6192948B2 (ja) | 2013-02-20 | 2017-09-06 | 株式会社豊田中央研究所 | ＳｉＣ単結晶、ＳｉＣウェハ、ＳｉＣ基板、及び、ＳｉＣデバイス |
| WO2021149235A1 (ja) * | 2020-01-24 | 2021-07-29 | 日本碍子株式会社 | 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法 |
| WO2021149598A1 (ja) * | 2020-01-24 | 2021-07-29 | 日本碍子株式会社 | 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板 |
| WO2022168372A1 (ja) * | 2021-02-05 | 2022-08-11 | 日本碍子株式会社 | 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板 |
| JP7636908B2 (ja) * | 2021-02-26 | 2025-02-27 | 日本碍子株式会社 | ＳｉＣ複合基板 |
-
2023
- 2023-11-14 JP JP2025509693A patent/JPWO2024202200A1/ja active Pending
- 2023-11-14 WO PCT/JP2023/040962 patent/WO2024202200A1/ja not_active Ceased
- 2023-11-14 EP EP23930828.1A patent/EP4692430A1/en active Pending
- 2023-11-14 CN CN202380080022.0A patent/CN120858208A/zh active Pending
-
2025
- 2025-09-25 US US19/339,550 patent/US20260022494A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP4692430A1 (en) | 2026-02-11 |
| WO2024202200A1 (ja) | 2024-10-03 |
| US20260022494A1 (en) | 2026-01-22 |
| CN120858208A (zh) | 2025-10-28 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20250910 |