JPWO2021064816A5 - - Google Patents

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JPWO2021064816A5
JPWO2021064816A5 JP2021550771A JP2021550771A JPWO2021064816A5 JP WO2021064816 A5 JPWO2021064816 A5 JP WO2021064816A5 JP 2021550771 A JP2021550771 A JP 2021550771A JP 2021550771 A JP2021550771 A JP 2021550771A JP WO2021064816 A5 JPWO2021064816 A5 JP WO2021064816A5
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Japan
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base substrate
alignment layer
content
substrate according
atoms
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JP2021550771A
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Japanese (ja)
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JPWO2021064816A1 (https=
JP7320070B2 (ja
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Priority claimed from PCT/JP2019/038598 external-priority patent/WO2021064816A1/ja
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JP2021550771A 2019-09-30 2019-09-30 下地基板及びその製造方法 Active JP7320070B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/038598 WO2021064816A1 (ja) 2019-09-30 2019-09-30 下地基板及びその製造方法

Publications (3)

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JPWO2021064816A1 JPWO2021064816A1 (https=) 2021-04-08
JPWO2021064816A5 true JPWO2021064816A5 (https=) 2022-06-09
JP7320070B2 JP7320070B2 (ja) 2023-08-02

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JP2021550771A Active JP7320070B2 (ja) 2019-09-30 2019-09-30 下地基板及びその製造方法

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JP (1) JP7320070B2 (https=)
WO (1) WO2021064816A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117976521B (zh) * 2024-03-28 2024-06-04 天津工业大学 一种亚稳相氧化镓膜异质外延生长方法及装置
WO2025203519A1 (ja) * 2024-03-28 2025-10-02 日本碍子株式会社 半導体膜、複合膜、及び半導体膜付き下地基板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3079509B2 (ja) * 1992-03-11 2000-08-21 日立建機株式会社 薄膜積層結晶体およびその製造方法
AU2007306494B2 (en) * 2006-10-10 2012-05-31 Oerlikon Trading Ag, Truebbach Layer system having at least one mixed crystal layer of a polyoxide
JP5343224B1 (ja) 2012-09-28 2013-11-13 Roca株式会社 半導体装置および結晶

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