JP7320070B2 - 下地基板及びその製造方法 - Google Patents
下地基板及びその製造方法 Download PDFInfo
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- JP7320070B2 JP7320070B2 JP2021550771A JP2021550771A JP7320070B2 JP 7320070 B2 JP7320070 B2 JP 7320070B2 JP 2021550771 A JP2021550771 A JP 2021550771A JP 2021550771 A JP2021550771 A JP 2021550771A JP 7320070 B2 JP7320070 B2 JP 7320070B2
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- QDOXWKRWXJOMAK-UHFFFAOYSA-N chromium(III) oxide Inorganic materials O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
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- HJUFTIJOISQSKQ-UHFFFAOYSA-N fenoxycarb Chemical compound C1=CC(OCCNC(=O)OCC)=CC=C1OC1=CC=CC=C1 HJUFTIJOISQSKQ-UHFFFAOYSA-N 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2019/038598 WO2021064816A1 (ja) | 2019-09-30 | 2019-09-30 | 下地基板及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021064816A1 JPWO2021064816A1 (https=) | 2021-04-08 |
| JPWO2021064816A5 JPWO2021064816A5 (https=) | 2022-06-09 |
| JP7320070B2 true JP7320070B2 (ja) | 2023-08-02 |
Family
ID=75337797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021550771A Active JP7320070B2 (ja) | 2019-09-30 | 2019-09-30 | 下地基板及びその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7320070B2 (https=) |
| WO (1) | WO2021064816A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025203519A1 (ja) * | 2024-03-28 | 2025-10-02 | 日本碍子株式会社 | 半導体膜、複合膜、及び半導体膜付き下地基板 |
| CN117976521B (zh) * | 2024-03-28 | 2024-06-04 | 天津工业大学 | 一种亚稳相氧化镓膜异质外延生长方法及装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010506049A (ja) | 2006-10-10 | 2010-02-25 | エーリコン・トレイディング・アーゲー・トリューバッハ | 少なくとも１つの複酸化物混合結晶皮膜を有する皮膜システム |
| JP2014072463A (ja) | 2012-09-28 | 2014-04-21 | Roca Kk | 半導体装置および結晶 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3079509B2 (ja) * | 1992-03-11 | 2000-08-21 | 日立建機株式会社 | 薄膜積層結晶体およびその製造方法 |
-
2019
- 2019-09-30 WO PCT/JP2019/038598 patent/WO2021064816A1/ja not_active Ceased
- 2019-09-30 JP JP2021550771A patent/JP7320070B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010506049A (ja) | 2006-10-10 | 2010-02-25 | エーリコン・トレイディング・アーゲー・トリューバッハ | 少なくとも１つの複酸化物混合結晶皮膜を有する皮膜システム |
| JP2014072463A (ja) | 2012-09-28 | 2014-04-21 | Roca Kk | 半導体装置および結晶 |
Non-Patent Citations (2)
| Title |
|---|
| JINNO, Riena, et al.，Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α -(Al,Ga)2O3 buffer layers，Applied Physics Express，2016年，vol.9，page 071101-1 - 071101-4，ISSN 1882-0778 |
| 金子健太郎，コランダム構造酸化ガリウム系混晶薄膜の成長と物性，京都大学学術情報リポジトリ 学位論文 博士(工学），報告番号：甲第１７５７３号，2014年01月31日，p.9-15, 1.3 コランダム構造酸化物，<DOI:10.14989/doctor.k17573> |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021064816A1 (ja) | 2021-04-08 |
| JPWO2021064816A1 (https=) | 2021-04-08 |
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