JPWO2021064816A1 - - Google Patents

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Publication number
JPWO2021064816A1
JPWO2021064816A1 JP2021550771A JP2021550771A JPWO2021064816A1 JP WO2021064816 A1 JPWO2021064816 A1 JP WO2021064816A1 JP 2021550771 A JP2021550771 A JP 2021550771A JP 2021550771 A JP2021550771 A JP 2021550771A JP WO2021064816 A1 JPWO2021064816 A1 JP WO2021064816A1
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JP
Japan
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JP2021550771A
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Japanese (ja)
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JPWO2021064816A5 (https=
JP7320070B2 (ja
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2021550771A 2019-09-30 2019-09-30 下地基板及びその製造方法 Active JP7320070B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/038598 WO2021064816A1 (ja) 2019-09-30 2019-09-30 下地基板及びその製造方法

Publications (3)

Publication Number Publication Date
JPWO2021064816A1 true JPWO2021064816A1 (https=) 2021-04-08
JPWO2021064816A5 JPWO2021064816A5 (https=) 2022-06-09
JP7320070B2 JP7320070B2 (ja) 2023-08-02

Family

ID=75337797

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021550771A Active JP7320070B2 (ja) 2019-09-30 2019-09-30 下地基板及びその製造方法

Country Status (2)

Country Link
JP (1) JP7320070B2 (https=)
WO (1) WO2021064816A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025203519A1 (ja) * 2024-03-28 2025-10-02 日本碍子株式会社 半導体膜、複合膜、及び半導体膜付き下地基板
CN117976521B (zh) * 2024-03-28 2024-06-04 天津工业大学 一种亚稳相氧化镓膜异质外延生长方法及装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05254991A (ja) * 1992-03-11 1993-10-05 Hitachi Constr Mach Co Ltd 薄膜積層結晶体およびその製造方法
JP2010506049A (ja) * 2006-10-10 2010-02-25 エーリコン・トレイディング・アーゲー・トリューバッハ 少なくとも1つの複酸化物混合結晶皮膜を有する皮膜システム
JP2014072463A (ja) * 2012-09-28 2014-04-21 Roca Kk 半導体装置および結晶

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05254991A (ja) * 1992-03-11 1993-10-05 Hitachi Constr Mach Co Ltd 薄膜積層結晶体およびその製造方法
JP2010506049A (ja) * 2006-10-10 2010-02-25 エーリコン・トレイディング・アーゲー・トリューバッハ 少なくとも1つの複酸化物混合結晶皮膜を有する皮膜システム
JP2014072463A (ja) * 2012-09-28 2014-04-21 Roca Kk 半導体装置および結晶

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JINNO, RIENA, ET AL.: "Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates", APPLIED PHYSICS EXPRESS, vol. 9, JPN6018028227, 2016, pages 071101 - 1, ISSN: 0005029596 *
金子健太郎: "コランダム構造酸化ガリウム系混晶薄膜の成長と物性", 京都大学学術情報リポジトリ 学位論文 博士(工学), vol. 報告番号:甲第17573号, JPN6019045741, 31 January 2014 (2014-01-31), pages 9 - 15, ISSN: 0005029595 *

Also Published As

Publication number Publication date
WO2021064816A1 (ja) 2021-04-08
JP7320070B2 (ja) 2023-08-02

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