JP2023084241A5 - - Google Patents

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Publication number
JP2023084241A5
JP2023084241A5 JP2021198295A JP2021198295A JP2023084241A5 JP 2023084241 A5 JP2023084241 A5 JP 2023084241A5 JP 2021198295 A JP2021198295 A JP 2021198295A JP 2021198295 A JP2021198295 A JP 2021198295A JP 2023084241 A5 JP2023084241 A5 JP 2023084241A5
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JP
Japan
Prior art keywords
semiconductor layer
nitride semiconductor
reflector
multilayer film
light emitting
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JP2021198295A
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English (en)
Japanese (ja)
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JP2023084241A (ja
JP7795900B2 (ja
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Priority to JP2021198295A priority Critical patent/JP7795900B2/ja
Priority claimed from JP2021198295A external-priority patent/JP7795900B2/ja
Priority to US18/716,893 priority patent/US20250047073A1/en
Priority to PCT/JP2022/043105 priority patent/WO2023106080A1/ja
Priority to CN202280080814.3A priority patent/CN118355574A/zh
Publication of JP2023084241A publication Critical patent/JP2023084241A/ja
Publication of JP2023084241A5 publication Critical patent/JP2023084241A5/ja
Application granted granted Critical
Publication of JP7795900B2 publication Critical patent/JP7795900B2/ja
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JP2021198295A 2021-12-07 2021-12-07 垂直共振器型発光素子 Active JP7795900B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2021198295A JP7795900B2 (ja) 2021-12-07 2021-12-07 垂直共振器型発光素子
US18/716,893 US20250047073A1 (en) 2021-12-07 2022-11-22 Vertical cavity light-emitting element
PCT/JP2022/043105 WO2023106080A1 (ja) 2021-12-07 2022-11-22 垂直共振器型発光素子
CN202280080814.3A CN118355574A (zh) 2021-12-07 2022-11-22 垂直腔发光元件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021198295A JP7795900B2 (ja) 2021-12-07 2021-12-07 垂直共振器型発光素子

Publications (3)

Publication Number Publication Date
JP2023084241A JP2023084241A (ja) 2023-06-19
JP2023084241A5 true JP2023084241A5 (https=) 2024-12-12
JP7795900B2 JP7795900B2 (ja) 2026-01-08

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ID=86730388

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JP2021198295A Active JP7795900B2 (ja) 2021-12-07 2021-12-07 垂直共振器型発光素子

Country Status (4)

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US (1) US20250047073A1 (https=)
JP (1) JP7795900B2 (https=)
CN (1) CN118355574A (https=)
WO (1) WO2023106080A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7581248B2 (ja) * 2020-01-08 2024-11-12 スタンレー電気株式会社 垂直共振器型発光素子
WO2025084020A1 (ja) * 2023-10-18 2025-04-24 ソニーセミコンダクタソリューションズ株式会社 発光装置
JP2025146382A (ja) * 2024-03-22 2025-10-03 スタンレー電気株式会社 窒化物半導体多層膜反射鏡の製造方法、垂直共振器型面発光レーザウエハ及び垂直共振器型面発光レーザ
WO2025204656A1 (ja) * 2024-03-28 2025-10-02 ソニーグループ株式会社 発光素子及び製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014747A (ja) 2002-06-06 2004-01-15 Furukawa Electric Co Ltd:The 面発光型半導体レーザ素子
JP4371202B2 (ja) 2003-06-27 2009-11-25 日立電線株式会社 窒化物半導体の製造方法及び半導体ウエハ並びに半導体デバイス
US20070003697A1 (en) 2004-07-28 2007-01-04 Jean-Francois Carlin Lattice-matched AllnN/GaN for optoelectronic devices
EP2621242A1 (en) * 2012-01-26 2013-07-31 Panasonic Corporation Improved discontinuous reception operation with additional wake up opportunities
JP6221236B2 (ja) 2013-01-17 2017-11-01 株式会社リコー 面発光レーザアレイ及びその製造方法
JP6846730B2 (ja) 2016-07-22 2021-03-24 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
JP2020188143A (ja) 2019-05-15 2020-11-19 スタンレー電気株式会社 半導体多層膜反射鏡を用いた垂直共振器型発光素子及びその製造方法

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