WO2023106080A1 - 垂直共振器型発光素子 - Google Patents

垂直共振器型発光素子 Download PDF

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Publication number
WO2023106080A1
WO2023106080A1 PCT/JP2022/043105 JP2022043105W WO2023106080A1 WO 2023106080 A1 WO2023106080 A1 WO 2023106080A1 JP 2022043105 W JP2022043105 W JP 2022043105W WO 2023106080 A1 WO2023106080 A1 WO 2023106080A1
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WO
WIPO (PCT)
Prior art keywords
layer
semiconductor layer
multilayer reflector
nitride semiconductor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/043105
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English (en)
French (fr)
Japanese (ja)
Inventor
孝信 赤木
大 倉本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to US18/716,893 priority Critical patent/US20250047073A1/en
Priority to CN202280080814.3A priority patent/CN118355574A/zh
Publication of WO2023106080A1 publication Critical patent/WO2023106080A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE

Definitions

  • a semiconductor structure layer including a semiconductor layer; a second multilayer reflector formed on the semiconductor structure layer and forming a resonator together with the first multilayer reflector; and the first multilayer reflector.
  • a current confinement structure formed between the reflecting mirror and the second multilayer reflecting mirror for concentrating a current in one region of the active layer;
  • a region along the top surface of the In-containing nitride semiconductor layer, which is the uppermost layer of the nitride semiconductor layer, is characterized by having a higher concentration of hydrogen impurities than other regions.
  • the first multilayer reflector 13 has a slightly lower reflectance than the second multilayer reflector 31 . Therefore, part of the light resonating between the first multilayer reflecting mirror 13 and the second multilayer reflecting mirror 31 is transmitted through the first multilayer reflecting mirror 13 and the substrate 11 and extracted to the outside.
  • FIG. 4 shows a cross-sectional view of a laser device 100 in which the surface emitting laser 10 is mounted on the support substrate 50. As shown in FIG. The cross-sectional view of FIG. 4 shows a cross-section along the same cross-sectional line as the cross-sectional view shown in FIG.
  • FIG. 5 is a TEM image (50000 ⁇ ) of the area A enclosed by the dashed line in FIG. 4, taken after the laser device 100 was driven.
  • straight line L1 is a straight line along the right end side surface of opening 25H in FIG. Therefore, in FIG. 5, the area to the left of the straight line L1 is the area directly below the opening 25H.
  • the insulating region, the low refractive index region, and the electrical contact surface 21S may be formed by etching the upper surface of the p-type semiconductor layer 21 provided with the insulating layer 25 in the above embodiment. Further, by ion implantation on the upper surface of the p-type semiconductor layer 21 on which the insulating layer 25 is provided, an insulating region, a region with a low refractive index, and an electrical contact surface 21S are formed. A current constriction effect similar to that of forming layer 25 may be produced. When ion implantation is performed, for example, B ions, Al ions, or oxygen ions are implanted into the p-type semiconductor layer 21 .

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
PCT/JP2022/043105 2021-12-07 2022-11-22 垂直共振器型発光素子 Ceased WO2023106080A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US18/716,893 US20250047073A1 (en) 2021-12-07 2022-11-22 Vertical cavity light-emitting element
CN202280080814.3A CN118355574A (zh) 2021-12-07 2022-11-22 垂直腔发光元件

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021198295A JP7795900B2 (ja) 2021-12-07 2021-12-07 垂直共振器型発光素子
JP2021-198295 2021-12-07

Publications (1)

Publication Number Publication Date
WO2023106080A1 true WO2023106080A1 (ja) 2023-06-15

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PCT/JP2022/043105 Ceased WO2023106080A1 (ja) 2021-12-07 2022-11-22 垂直共振器型発光素子

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US (1) US20250047073A1 (https=)
JP (1) JP7795900B2 (https=)
CN (1) CN118355574A (https=)
WO (1) WO2023106080A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7581248B2 (ja) * 2020-01-08 2024-11-12 スタンレー電気株式会社 垂直共振器型発光素子
WO2025084020A1 (ja) * 2023-10-18 2025-04-24 ソニーセミコンダクタソリューションズ株式会社 発光装置
JP2025146382A (ja) * 2024-03-22 2025-10-03 スタンレー電気株式会社 窒化物半導体多層膜反射鏡の製造方法、垂直共振器型面発光レーザウエハ及び垂直共振器型面発光レーザ
WO2025204656A1 (ja) * 2024-03-28 2025-10-02 ソニーグループ株式会社 発光素子及び製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014747A (ja) * 2002-06-06 2004-01-15 Furukawa Electric Co Ltd:The 面発光型半導体レーザ素子
JP2005019872A (ja) * 2003-06-27 2005-01-20 Hitachi Cable Ltd 窒化物半導体の製造方法及び半導体ウエハ並びに半導体デバイス
US20070003697A1 (en) * 2004-07-28 2007-01-04 Jean-Francois Carlin Lattice-matched AllnN/GaN for optoelectronic devices
JP2014138096A (ja) * 2013-01-17 2014-07-28 Ricoh Co Ltd 面発光レーザアレイ及びその製造方法
JP2018014444A (ja) * 2016-07-22 2018-01-25 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
WO2020230669A1 (ja) * 2019-05-15 2020-11-19 スタンレー電気株式会社 半導体多層膜反射鏡を用いた垂直共振器型発光素子及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2621242A1 (en) * 2012-01-26 2013-07-31 Panasonic Corporation Improved discontinuous reception operation with additional wake up opportunities

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014747A (ja) * 2002-06-06 2004-01-15 Furukawa Electric Co Ltd:The 面発光型半導体レーザ素子
JP2005019872A (ja) * 2003-06-27 2005-01-20 Hitachi Cable Ltd 窒化物半導体の製造方法及び半導体ウエハ並びに半導体デバイス
US20070003697A1 (en) * 2004-07-28 2007-01-04 Jean-Francois Carlin Lattice-matched AllnN/GaN for optoelectronic devices
JP2014138096A (ja) * 2013-01-17 2014-07-28 Ricoh Co Ltd 面発光レーザアレイ及びその製造方法
JP2018014444A (ja) * 2016-07-22 2018-01-25 学校法人 名城大学 半導体多層膜反射鏡及び垂直共振器型発光素子の製造方法
WO2020230669A1 (ja) * 2019-05-15 2020-11-19 スタンレー電気株式会社 半導体多層膜反射鏡を用いた垂直共振器型発光素子及びその製造方法

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CN118355574A (zh) 2024-07-16
JP2023084241A (ja) 2023-06-19
US20250047073A1 (en) 2025-02-06
JP7795900B2 (ja) 2026-01-08

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