JP7538900B2 - 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板 - Google Patents

希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板 Download PDF

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JP7538900B2
JP7538900B2 JP2022579333A JP2022579333A JP7538900B2 JP 7538900 B2 JP7538900 B2 JP 7538900B2 JP 2022579333 A JP2022579333 A JP 2022579333A JP 2022579333 A JP2022579333 A JP 2022579333A JP 7538900 B2 JP7538900 B2 JP 7538900B2
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sic
substrate
rare earth
layer
single crystal
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JPWO2022168372A5 (https=
JPWO2022168372A1 (https=
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史恭 野崎
潔 松島
潤 吉川
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2022579333A 2021-02-05 2021-10-12 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板 Active JP7538900B2 (ja)

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JP2021017823 2021-02-05
JP2021017823 2021-02-05
PCT/JP2021/037793 WO2022168372A1 (ja) 2021-02-05 2021-10-12 希土類含有ＳｉＣ基板及びそれを用いたＳｉＣ複合基板

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JPWO2022168372A1 JPWO2022168372A1 (https=) 2022-08-11
JPWO2022168372A5 JPWO2022168372A5 (https=) 2023-04-26
JP7538900B2 true JP7538900B2 (ja) 2024-08-22

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WO (1) WO2022168372A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4579006A1 (en) * 2022-08-22 2025-07-02 NGK Insulators, Ltd. Sic substrate and sic composite substrate
JPWO2024202200A1 (https=) * 2023-03-28 2024-10-03
JP2024169169A (ja) * 2023-05-25 2024-12-05 住友金属鉱山株式会社 ＳｉＣ半導体装置用基板、ＳｉＣ接合基板、ＳｉＣ多結晶基板およびＳｉＣ多結晶基板の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004323293A (ja) 2003-04-24 2004-11-18 Toyota Motor Corp ＳｉＣ単結晶の製造方法
JP2011051857A (ja) 2009-09-03 2011-03-17 Sumitomo Metal Ind Ltd 炭化珪素単結晶の製造方法
CN111270304A (zh) 2020-03-27 2020-06-12 江苏超芯星半导体有限公司 一种制备4h碳化硅单晶的方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11268995A (ja) * 1998-03-20 1999-10-05 Denso Corp 炭化珪素単結晶の製造方法
WO2021149235A1 (ja) * 2020-01-24 2021-07-29 日本碍子株式会社 希土類含有ＳｉＣ基板及びＳｉＣエピタキシャル層の製法
WO2021149598A1 (ja) * 2020-01-24 2021-07-29 日本碍子株式会社 二軸配向ＳｉＣ複合基板及び半導体デバイス用複合基板

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004323293A (ja) 2003-04-24 2004-11-18 Toyota Motor Corp ＳｉＣ単結晶の製造方法
JP2011051857A (ja) 2009-09-03 2011-03-17 Sumitomo Metal Ind Ltd 炭化珪素単結晶の製造方法
CN111270304A (zh) 2020-03-27 2020-06-12 江苏超芯星半导体有限公司 一种制备4h碳化硅单晶的方法

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JPWO2022168372A1 (https=) 2022-08-11

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